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Новосибирский государственный технический университет

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APT30M30LLL

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APT30M30B2LL

APT30M30LLL

300V 100A 0.030Ω

POWER MOS 7	R	MOSFET	B2LL
	R

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

T-MAX™ TO-264

LLL

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• Popular T-MAX™ or TO-264 Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT30M30B2LL_LLL

UNIT

VDSS

Drain-Source Voltage

300

Volts

Continuous Drain Current 5 @ TC = 25°C

100

Amps

IDM

Pulsed Drain Current

400

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

694

Watts

Linear Derating Factor

5.56

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

100

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

3000

STATICELECTRICALCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

300

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A)

0.030

Ohms

Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7153 Rev B 7-2004

DYNAMIC CHARACTERISTICS

APT30M30B2LL_LLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

7030

Coss

Output Capacitance

1895

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

110

Total Gate Charge 3

VGS = 10V

140

Qgs

Gate-Source Charge

VDD = 150V

Qgd

Gate-Drain ("Miller") Charge

ID = 100A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVESWITCHING

VGS = 15V

Rise Time

= 150V

td(off)

Turn-off Delay Time

ID = 100A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@25°C

925

VDD = 200V, VGS = 15V

Eoff

1345

Turn-off Switching Energy

ID = 100A, RG = 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVESWITCHING@125°C

1055

VDD = 200V, VGS = 15V

Eoff

Turn-off Switching Energy

ID = 100A, RG = 5Ω

1485

SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current

(Body Diode)

100

Amps

ISM

Pulsed Source Current 1

(Body Diode)

400

Diode Forward Voltage 2 (V

= 0V, I

= -I

100A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -ID100A, dlS/dt = 100A/µs)

450

Q rr

Reverse Recovery Charge (IS = -ID100A, dlS/dt = 100A/µs)

10.0

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMALCHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

RθJC

Junction to Case

0.18

°C/W

RθJA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A

temperature

The maximum current is limited by lead temperature

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

dv/dt numbers reflect the limitations of the test circuit rather than the

3 See MIL-STD-750 Method 3471

device itself. I

≤ -I 100A

di/ ≤ 700A/µs V

≤ 300V

≤ 150°C

Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

		0.20
	(°C/W)	0.18
	(°C/W)	0.16	0.9
			0.9
	IMPEDANCE
	IMPEDANCE	0.10
		0.14	0.7
		0.12
2004-7	THERMAL,		0.5		Note:
2004-7	THERMAL,				P	t2
		0.08			DM	t1
		0.06	0.3
B	θJC	0.04				Duty Factor D = t1/	t2
B	Z		0.1				t2
Rev		0.02	0.1		Peak TJ = PDM x ZθJC + TC
Rev			0.05	SINGLE PULSE
7153-		0 10-5	0.05

			10-4	10-3	10-2	10-1		1.0
050				RECTANGULARPULSEDURATION(SECONDS)
050			FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL

Junction temp. ( ”C)

	0.0271	0.00899F
Power	0.0656	0.0202F
(Watts)	0.0656	0.0202F
(Watts)
	0.0859	0.293F

Case temperature

FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL

	250
			VDS> ID (ON) x RDS(ON) MAX.
(AMPERES)			250 µSEC. PULSE TEST
	200		@ <0.5 % DUTY CYCLE
	200
	150
DRAIN CURRENT	100
DRAIN CURRENT	50			TJ = +25°C
,
D			TJ	= +125°C
I						TJ = -55°C


	0	0	2	4	6	8	10
		VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE4, TRANSFERCHARACTERISTICS

120

(AMPERES)	100
	100
	80
CURRENT	80
CURRENT	60
	60
,DRAIN	40
	40
	20
D
D
I
	0
	0	25	50		75	100	125	150
				TC, CASE TEMPERATURE (°C)
FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE
RESISTANCE	2.5
RESISTANCE				ID = 50A
			VGS = 10V
SOURCE-TO-DRAINON (NORMALIZED)	2.0
	2.0
	1.5


	1.0


,	0.5



DS(ON)	0.0

			-25 0		25 50	75	100 125	150
R	-50		-25 0		25 50	75	100 125	150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE 8, RDS(ON) vs. TEMPERATURE

	250							APT30M30B2LL_LLL
	250					VGS =15 &10V
						VGS =15 &10V
(AMPERES)							8V
	200
							7.5V
	150
CURRENT								7V
	100								6.5
									6.5
DRAIN	50									6V
,
D
I										5.5V
										5.5V
	0 0			5	10		15	20	25		30
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS
RESISTANCE	1.40
				NORMALIZED TO
	1.30		VGS = 10V		@ ID = 50A
	1.30

ON	1.20
ON
DRAIN-TO-SOURCE	1.10					VGS=10V
						VGS=10V
	1.00
	0.90							VGS=20V

,
DS(ON)	0.80	0	20	40	60	80	100	120	140	160	180
R		0	20	40	60	80	100	120	140	160	180
				ID, DRAIN CURRENT (AMPERES)

FIGURE 5, RDS(ON) vs DRAIN CURRENT

BREAKDOWNSOURCE-TO-DRAIN	(NORMALIZED)VOLTAGE	1.15
		0.95
		0.95
		1.10
		1.05


,		1.00





DSS
BV		0.90-
		0.90-	50		-25		0	25	50	75	100 125	150
					TJ, JUNCTION TEMPERATURE (°C)
		FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
		1.2
THRESHOLDVOLTAGE		1.1


	(NORMALIZED)	1.0


		0.8
		0.8
,		0.9
		0.9



GS(TH)		0.7


V
		0.6-

				50	-25		0	25	50	75	100 125	150
						TC, CASE TEMPERATURE (°C)

FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7153 Rev B 7-2004

	400	OPERATIONHERE
		OPERATIONHERE
		LIMITEDBYRDS(ON)
CURRENT (AMPERES)	100
						100µS
	10					1mS
DRAIN		T		=+25°C		10mS
,
D
I		C
		TJ	=+150°C
	1	SINGLE PULSE
	1	1		10	100	300
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
		FIGURE10,MAXIMUMSAFEOPERATINGAREA

(VOLTS)	16	ID = 100A
		ID = 100A
			VDS=60V
VOLTAGE	12		VDS=60V
		VDS=150V
				VDS=240V
GATE-TO-SOURCE	8			VDS=240V
	8
	4

,
GS
V	0 0
	0 0	50	100	150	200	250
		Qg, TOTAL GATE CHARGE (nC)

FIGURE12,GATECHARGEvsGATE-TO-SOURCEVOLTAGE

	120
	100					td(off)
	100
(ns)	80	VDD = 300V
(ns)		RG = 5Ω
d(off)		RG = 5Ω
d(off)	60	T	J	= 125°C
t			J
and		L = 100µH
		L = 100µH

d(on)	40					td(on)
d(on)
t

	20
	0
	40			60	80	100	120	140	160
						ID (A)
	FIGURE 14, DELAY TIMES vs CURRENT
	3500
		VDD = 200V
	3000	RG = 5Ω
		TJ = 125°C

	J)(	2500	L = 100µH
			L = 100µH
	ENERGY		EON	includes
			EON	includes
			diode reverse recovery.
		2000

	SWITCHING					Eoff
2004-		1500				Eoff
2004-						Eon

7		1000
		1000
		500
B


Rev		0
Rev		40		60	80	100	120	140	160
7153-050						ID (A)
7153-050		FIGURE 16, SWITCHING ENERGY vs CURRENT
		FIGURE 16, SWITCHING ENERGY vs CURRENT

	20,000					APT30M30B2LL_LLL
	20,000
	10,000						Ciss
(pF)							Coss
CAPACITANCE	1,000
	1,000
C,	100						Crss
	10	0	10	20	30	40	50
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
(AMPERES)	300
(AMPERES)	100		TJ =+150°C
CURRENT					TJ =+25°C
DRAINREVERSE,					TJ =+25°C
DRAINREVERSE,	10
	10

DR	10.3			0.5	0.7	0.9	1.1	1.3	1.5
I	10.3			0.5	0.7	0.9	1.1	1.3	1.5
		VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
	FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE
	200
	180	VDD = 200V
	180	RG		= 5Ω
		RG		= 5Ω
	160	TJ = 125°C
	140	L = 100µH
	140
(ns)	120					tf
	120

f	100
t	100
and	80
t	80
r
	60						tr
	60
	40
	20
	0
	40			60	80	100	120	140	160
						ID (A)
	FIGURE 15, RISE AND FALL TIMES vs CURRENT
	5000	VDD = 200V
		VDD = 200V
		ID = 100A
( J)	4000	TJ = 125°C
		L = 100µH				Eoff
		E	ON	includes		Eoff
ENERGY			ON
ENERGY	300	diode reverse recovery.
		diode reverse recovery.
SWITCHING
SWITCHING	2000
	2000
								Eon
	1000
	0

0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms)

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

Typical Performance Curves

10%	GateVoltage

TJ125°C

td(on)


	tr		Drain Current
	tr
	90%
	90%

5%	10%	5%
5%	10%		Drain Voltage
			Drain Voltage

Switching Energy

Figure18,Turn-onSwitchingWaveformsandDefinitions

APT60DS30

VDD

VDS

D.U.T.

Figure 20, Inductive Switching Test Circuit

APT30M30B2LL_LLL

90%

GateVoltage

TJ125°C

td(off)

	Drain Voltage
	tf
	90%
	10% 0
Switching Energy	Drain Current
Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

T-MAXTM (B2) Package Outline

TO-264 (L) Package Outline

4.69 (.185)			4.60	(.181)
5.31 (.209)		15.49 (.610)	5.21	(.205)	19.51 (.768)
1.49 (.059)		16.26 (.640)	1.80	(.071)	20.50 (.807)
2.49 (.098)			2.01	(.079)		3.10 (.122)
						3.10 (.122)
		5.38 (.212)				3.48 (.137)
		6.20 (.244)
					5.79 (.228)
Drain	20.80 (.819)				6.20 (.244)
	21.46 (.845)	Drain
		Drain		26.49 (1.043)
				25.48 (1.003)
	4.50 (.177) Max.	2.87 (.113)
	4.50 (.177) Max.	3.12 (.123)				2.29 (.090)
		3.12 (.123)				2.29 (.090)
		1.65 (.065)			2.29 (.090)	2.69 (.106)
0.40 (.016)		1.65 (.065)			2.69 (.106)
0.79 (.031)	19.81 (.780)	2.13 (.084)		19.81 (.780)		Gate
	20.32 (.800)	Gate		19.81 (.780)
	20.32 (.800)	Gate		21.39 (.842)
	1.01 (.040)	Drain				Drain
	1.40 (.055)	Drain				Drain
		Source				Source
			0.48	(.019)	0.76 (.030)
2.21 (.087)			0.84	(.033)	1.30 (.051)
2.21 (.087)			2.59	(.102)	2.79 (.110)
2.59 (.102)	5.45 (.215) BSC		3.00	(.118)	3.18 (.125)

	2-Plcs.
		5.45 (.215) BSC
	These dimensions are equal to the TO-247 without the mounting hole.
		2-Plcs.

Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)

APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7153 Rev B 7-2004

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