СПП1 / СППП. РГЗ / Паспортные данные MOSFET / IRFB38N20D
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PD - 94358
IRFB38N20D
SMPS MOSFET IRFS38N20D IRFSL38N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS |
RDS(on) max |
ID |
200V |
0.054Ω |
44A |
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Benefits
lLow Gate-to-Drain Charge to Reduce Switching Losses
lFully Characterized Capacitance Including
Effective COSS to Simplify Design, (See App. Note AN1001)
lFully Characterized Avalanche Voltage and Current
TO-220AB |
D2Pak |
TO-262 |
IRFB38N20D |
IRFS38N20D |
IRFSL38N20D |
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Absolute Maximum Ratings
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Parameter |
Max. |
Units |
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ID @ TC = 25°C |
Continuous Drain Current, VGS @ 10V |
44 |
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ID @ TC = 100°C |
Continuous Drain Current, VGS @ 10V |
32 |
A |
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IDM |
Pulsed Drain Current • |
180 |
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PD @TA = 25°C |
Power Dissipation ‡ |
3.8 |
W |
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PD @TC = 25°C |
Power Dissipation |
320 |
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Linear Derating Factor |
2.1 |
W/°C |
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VGS |
Gate-to-Source Voltage |
± 30 |
V |
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dv/dt |
Peak Diode Recovery dv/dt ƒ |
9.5 |
V/ns |
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TJ |
Operating Junction and |
-55 to + 175 |
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TSTG |
Storage Temperature Range |
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°C |
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Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
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Mounting torqe, 6-32 or M3 screw† |
10 lbf•in (1.1N•m) |
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Thermal Resistance
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Parameter |
Typ. |
Max. |
Units |
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Rθ JC |
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Junction-to-Case |
––– |
0.47 |
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Rθ CS |
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Case-to-Sink, Flat, Greased Surface † |
0.50 |
––– |
°C/W |
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Rθ JA |
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Junction-to-Ambient† |
––– |
62 |
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Rθ JA |
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Junction-to-Ambient‡ |
––– |
40 |
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Notes • through ‡ |
are on page 11 |
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www.irf.com |
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1 |
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12/12/01
IRFB/IRFS/IRFSL38N20D
Static @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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V(BR)DSS |
Drain-to-Source Breakdown Voltage |
200 |
––– |
––– |
V |
VGS = 0V, ID = 250µA |
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∆ V(BR)DSS/∆ TJ |
Breakdown Voltage Temp. Coefficient |
––– |
0.22 |
––– |
V/°C |
Reference to 25°C, ID = 1mA |
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RDS(on) |
Static Drain-to-Source On-Resistance |
––– |
––– |
0.054 |
Ω |
VGS = 10V, ID = 26A „ |
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VGS(th) |
Gate Threshold Voltage |
3.0 |
––– |
5.0 |
V |
VDS = VGS, ID = 250µA |
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IDSS |
Drain-to-Source Leakage Current |
––– |
––– |
25 |
µA |
VDS = 200V, VGS = 0V |
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––– |
––– |
250 |
VDS = 160V, VGS = 0V, TJ = 150°C |
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IGSS |
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Gate-to-Source Forward Leakage |
––– |
––– |
100 |
nA |
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VGS = 30V |
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Gate-to-Source Reverse Leakage |
––– |
––– |
-100 |
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VGS = -30V |
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Dynamic @ TJ = 25°C (unless otherwise specified)
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Parameter |
Min. |
Typ. |
Max. |
Units |
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Conditions |
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gfs |
Forward Transconductance |
17 |
––– |
––– |
S |
VDS = 50V, ID = 26A |
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Qg |
Total Gate Charge |
––– |
76 |
110 |
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ID = 26A |
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Qgs |
Gate-to-Source Charge |
––– |
22 |
34 |
nC |
VDS = 160V |
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Qgd |
Gate-to-Drain ("Miller") Charge |
––– |
34 |
51 |
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VGS = 10V, |
„ |
td(on) |
Turn-On Delay Time |
––– |
16 |
––– |
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VDD = 100V |
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tr |
Rise Time |
––– |
95 |
––– |
ns |
ID = 26A |
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td(off) |
Turn-Off Delay Time |
––– |
29 |
––– |
RG = 2.5Ω |
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tf |
Fall Time |
––– |
47 |
––– |
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VGS = 10V |
„ |
Ciss |
Input Capacitance |
––– |
2900 |
––– |
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VGS = 0V |
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Coss |
Output Capacitance |
––– |
450 |
––– |
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VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
––– |
73 |
––– |
pF |
ƒ = 1.0MHz |
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Coss |
Output Capacitance |
––– |
3550 |
––– |
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VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz |
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Coss |
Output Capacitance |
––– |
180 |
––– |
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VGS = 0V, VDS = 160V, ƒ = 1.0MHz |
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Coss eff. |
Effective Output Capacitance |
––– |
380 |
––– |
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VGS = 0V, VDS = 0V to 160V … |
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Avalanche Characteristics
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Parameter |
Typ. |
Max. |
Units |
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EAS |
Single Pulse Avalanche Energy‚† |
––– |
460 |
mJ |
IAR |
Avalanche Current• |
––– |
26 |
A |
EAR |
Repetitive Avalanche Energy• |
––– |
32 |
mJ |
Diode Characteristics
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Parameter |
Min. |
Typ. |
Max. |
Units |
Conditions |
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IS |
Continuous Source Current |
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MOSFET symbol |
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D |
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––– |
––– |
44 |
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(Body Diode) |
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showing the |
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A |
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ISM |
Pulsed Source Current |
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180 |
integral reverse |
G |
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(Body Diode) •† |
––– |
––– |
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p-n junction diode. |
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S |
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VSD |
Diode Forward Voltage |
––– |
––– |
1.5 |
V |
TJ = 25°C, IS = 26A, VGS = 0V |
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trr |
Reverse Recovery Time |
––– |
160 |
240 |
nS |
TJ = 25°C, IF = 26A |
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Qrr |
Reverse RecoveryCharge |
––– |
1.3 |
2.0 |
µC |
di/dt = 100A/µs „ |
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ton |
Forward Turn-On Time |
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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www.irf.com |
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IRFB/IRFS/IRFSL38N20D |
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1000 |
VGS |
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100 |
VGS |
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TOP |
15V |
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TOP |
15V |
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12V |
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12V |
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(A) |
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10V |
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(A) |
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10V |
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8.0V |
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8.0V |
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Current |
100 |
7.0V |
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Current |
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7.0V |
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6.0V |
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6.0V |
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BOTTOM |
5.5V |
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10 |
5.5V |
5.0V |
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Source-to-Drain |
5.0V |
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Source-to-Drain |
BOTTOM |
5.0V |
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1 |
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5.0V |
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10 |
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1 |
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D |
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D |
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I |
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300µs PULSE WIDTH |
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300µs PULSE WIDTH |
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Tj = 25°C |
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Tj = 175°C |
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0.1 |
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0.1 |
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0.1 |
1 |
10 |
100 |
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0.1 |
1 |
10 |
100 |
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VDS, Drain-to-Source Voltage (V) |
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VDS, Drain-to-Source Voltage (V) |
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Fig 1. Typical Output Characteristics |
Fig 2. Typical Output Characteristics |
1000.00 |
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(Α |
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TJ = 25°C |
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Current |
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100.00 |
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TJ = 175°C |
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Source-to- |
10.00 |
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Drain, |
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D |
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I |
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VDS = 15V |
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1.00 |
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300µs PULSE WIDTH |
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5.0 |
7.0 |
9.0 |
11.0 |
13.0 |
15.0 |
VGS, Gate-to-Source Voltage (V)
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3.5 |
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I D = 44A |
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3.0 |
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2.5 |
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Drain-to-Source On Resistance |
(Normalized) |
2.0 |
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1.5 |
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1.0 |
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0.5 |
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DS(on) |
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V GS = 10V |
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R |
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0.0 |
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-60 |
-40 |
-20 |
0 |
20 |
40 |
60 |
80 |
100 |
120 140 |
160 |
180 |
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T , Junction Temperature |
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( ° C) |
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J |
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Fig 3. Typical Transfer Characteristics |
Fig 4. Normalized On-Resistance |
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Vs. Temperature |
www.irf.com |
3 |
IRFB/IRFS/IRFSL38N20D |
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100000 |
VGS |
= 0V, f = 1 MHZ |
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C |
= C |
+ C |
, |
C |
SHORTED |
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iss |
gs |
gd |
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ds |
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C |
= C |
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rss |
gd |
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10000 |
C |
= C |
+ C |
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oss |
ds |
gd |
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Capacitance(pF) |
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Ciss |
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1000 |
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Coss |
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C, |
100 |
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Crss |
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10 |
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1 |
10 |
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100 |
1000 |
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VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
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12 |
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ID = |
26A |
VDS |
= 160V |
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VDS |
= 100V |
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10 |
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VDS |
= 40V |
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(V) |
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Voltage |
7 |
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Gate-to-Source |
5 |
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GS |
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V |
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0 |
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0 |
16 |
32 |
48 |
64 |
80 |
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00 |
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1000 |
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(A)Current |
100.00 |
TJ |
= 175°C |
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(A)Current |
100 |
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Drain |
10.00 |
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Source-to -Drain , |
10 |
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Reverse, |
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TJ = 25°C |
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1.00 |
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SD |
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D |
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VGS = 0V |
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0.10 |
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0.1 |
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0.0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
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VSD, Source-toDrain Voltage (V) |
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OPERATION IN THIS AREA |
LIMITED BY RDS(on) |
100µsec |
1msec |
10msec |
Tc = 25°C |
Tj = 175°C |
Single Pulse
1 |
10 |
100 |
1000 |
VDS , Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode |
Fig 8. Maximum Safe Operating Area |
Forward Voltage |
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4 |
www.irf.com |
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IRFB/IRFS/IRFSL38N20D |
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50 |
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RD |
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VDS |
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VGS |
D.U.T. |
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40 |
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RG |
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+-VDD |
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(A) |
30 |
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10V |
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Current |
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Pulse Width ≤ 1 |
µs |
Drain, |
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Duty Factor ≤ 0.1 |
% |
20 |
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D |
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Fig 10a. Switching Time Test Circuit |
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10 |
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VDS |
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90% |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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T |
, Case Temperature |
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( ° C) |
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C |
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10%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VGS
td(on) |
tr |
td(off) tf |
Fig 10b. Switching Time Waveforms
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1 |
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) |
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D = 0.50 |
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thJC |
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(Z |
0.1 |
0.20 |
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0.10 |
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Response |
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0.05 |
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0.02 |
SINGLE PULSE |
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0.01 |
(THERMAL RESPONSE) |
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Thermal |
0.01 |
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t 1 |
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t 2 |
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Notes: |
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1. Duty factor D = |
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t 1 / t |
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2. Peak T |
J = P |
DM |
x Z |
thJC |
+ T C |
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0.001 |
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0.00001 |
0.0001 |
0.001 |
0.01 |
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0.1 |
1 |
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t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com |
5 |
IRFB/IRFS/IRFSL38N20D
1 5V
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V D S |
L |
D R IVER |
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R G |
D .U .T |
+ |
VD D |
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IA S |
- |
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A |
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20V |
0 .0 1Ω |
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tp |
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Fig 12a. Unclamped Inductive Test Circuit
V (B R )D SS
tp
I A S 
Fig 12b. Unclamped Inductive Waveforms
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QG |
10 V |
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QGS |
QGD |
VG |
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Charge |
Fig 13a. Basic Gate Charge Waveform
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900 |
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I D |
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TOP |
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11A |
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19A |
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720 |
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BOTTOM |
26A |
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(mJ) |
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Energy |
540 |
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Pulse Avalanche |
360 |
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, Single |
180 |
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AS |
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E |
0 |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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Starting Tj, Junction Temperature |
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( °C) |
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
12V 
.2µ F
.3µ F
+
D.U.T. -VDS
VGS 
3mA
IG 
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
6 |
www.irf.com |
D.U.T
+
‚
-
•
RG
IRFB/IRFS/IRFSL38N20D
Peak Diode Recovery dv/dt Test Circuit
+ |
Circuit Layout Considerations |
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• |
Low Stray Inductance |
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• |
Ground Plane |
ĥ Low Leakage Inductance Current Transformer
-
- „ +
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• dv/dt controlled by RG |
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+ |
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• Driver same type as D.U.T. |
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- VDD |
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• |
ISD controlled by Duty Factor "D" |
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• |
D.U.T. - Device Under Test |
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Driver Gate Drive |
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P.W. |
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Period |
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D = |
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P.W. |
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Period |
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VGS=10V * |
D.U.T. ISD Waveform |
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Reverse |
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Recovery |
Body Diode Forward |
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Current |
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Current |
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di/dt |
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D.U.T. VDS Waveform |
Diode Recovery |
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dv/dt |
VDD |
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Re-Applied |
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Voltage |
Body Diode |
Forward Drop |
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Inductor Curent |
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Ripple ≤ |
5% |
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ISD |
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
www.irf.com |
7 |
IRFB/IRFS/IRFSL38N20D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
|
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10 .5 4 (.415 ) |
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3 .7 8 (.149) |
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- B - |
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2 .8 7 (.1 13) |
10 .2 9 (.405 ) |
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3 .5 4 (.139) |
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4 .6 9 (.18 5) |
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2 .6 2 (.1 03) |
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- A - |
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4 .2 0 (.16 5) |
1 .3 2 (.05 2) |
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1 .2 2 (.04 8) |
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6.4 7 (.2 55) |
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4 |
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6.1 0 (.2 40) |
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15 .2 4 |
(.60 0) |
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14 .8 4 |
(.58 4) |
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1 .1 5 (.04 5) |
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LE A D A S S IG N M E N TS |
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M IN |
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1 - G A T E |
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1 2 3 |
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2 - D R A IN |
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3 - S O U R C E |
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4 - D R A IN |
1 4 .0 9 (.5 55) |
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4 .0 6 (.160) |
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1 3 .4 7 (.5 30) |
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3 .5 5 (.140) |
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3X |
0 .9 3 (.0 37) |
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0 .5 5 (.02 2) |
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1 .4 0 (.05 5) |
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0 .6 9 (.0 27) |
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3 X 0 .4 6 (.01 8) |
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3 X 1 .1 5 (.04 5) |
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0 .3 6 (.014 ) |
M B A |
M |
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2 .9 2 (.115 ) |
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2 .5 4 |
(.10 0) |
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2 .6 4 (.104 ) |
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2X |
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N O TE S :
1 |
D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14 .5 M , 1 982 . |
3 |
O U TL IN E C O N F O R M S T O JE D E C O U T LIN E T O -2 20A B . |
2 |
C O N TR O LLIN G D IM E N S IO N : IN C H |
4 |
H E A T S IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . |
TO-220AB Part Marking Information
EXAMPLE: THIS IS AN IRF1010 |
INTERNATIONAL |
PART NUMBER |
|
LOT CODE 1789 |
|||
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|||
ASSEMBLED ON WW 19, 1997 |
RECTIFIER |
|
|
LOGO |
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||
IN THE ASSEMBLY LINE "C" |
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DATE CODE |
||
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|
ASSEMBLY |
YEAR 7 = 1997 |
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WEEK 19 |
||
|
LOT CODE |
||
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LINE C |
||
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|
8 |
www.irf.com |
IRFB/IRFS/IRFSL38N20D
D2Pak Package Outline
|
10.54 |
(.415) |
|
- B - |
10.16 (.400) |
|
10.29 |
(.405) |
4.69 |
(.185) |
RE F. |
1.40 (.055) |
- A - |
4.20 |
(.165) |
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1.32 (.052) |
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M AX. |
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1.22 (.048) |
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2 |
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6.47 (.255)
6.18 (.243)
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1.78 (.070) |
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15.49 (.610) |
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2.79 (.110) |
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1.27 (.050) |
1 |
3 |
14.73 (.580) |
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2.29 (.090) |
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5.28 (.208) |
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4.78 (.188) |
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3X |
1.40 (.055) |
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0.55 (.022) |
1.39 (.055) |
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1.14 (.045) |
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3X |
0.93 (.037) |
1.14 (.045) |
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0.46 (.018) |
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0.69 (.027) |
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5.08 (.200) |
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0.25 (.010) M |
B A M |
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NO TE S: |
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LE A D A SS IGNME NTS |
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1 |
DIM ENS IONS A FTER SOLD ER DIP. |
|
1 - GA TE |
|||||
2 |
DIM ENS IONIN G & TOLE RA NCIN G PE R A NS I Y14.5M , 1982. |
2 - DRAIN |
||||||
3 - S OURCE |
||||||||
3 |
CONTROLLIN G DIM ENSIO N : INCH . |
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||||||
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|||||||
4 |
HE ATSINK & LEA D DIM ENS IONS D O NOT INCLUDE B URRS. |
|
||||||
2.61 (.103)
2.32 (.091)
8.89 (.350) RE F.
M INIMUM RE COM ME NDE D F OOTP RINT
11.43(.450)
8.89(.350) 
17.78 (.700)
3.81 (.150)
2.54 (.100)
2.08 (.082) 2X
2X
D2Pak Part Marking Information
THIS IS AN IRF530S WITH |
|
PART NUMBER |
|
LOT CODE 8024 |
INTERNATIONAL |
||
|
|||
ASSEMBLED ON WW 02, 2000 |
RECTIFIER |
F530S |
|
IN THE ASSEMBLY LINE "L" |
LOGO |
||
DATE CODE |
|||
|
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||
|
ASSEMBLY |
YEAR 0 = 2000 |
|
|
WEEK 02 |
||
|
LOT CODE |
||
|
LINE L |
||
|
|
www.irf.com |
9 |
IRFB/IRFS/IRFSL38N20D
TO-262 Package Outline
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789 |
INTERNATIONAL |
|
ASSEMBLED ON WW 19, 1997 |
||
RECTIFIER |
||
IN THE ASSEMBLY LINE "C" |
||
LOGO |
||
|
||
|
ASSEMBLY |
|
|
LOT CODE |
10
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
www.irf.com