СПП1 / СППП. РГЗ / Паспортные данные MOSFET / APT20M16LLL
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APT20M16B2LL
APT20M16LLL
200V 100A 0.016Ω
POWER MOS 7 R MOSFET
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching
losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
• Lower Input Capacitance |
• Increased Power Dissipation |
• Lower Miller Capacitance |
• Easier To Drive |
• Lower Gate Charge, Qg |
• Popular T-MAX™ or TO-264 Package |
B2LL
T-MAX™
TO-264
LLL
D
G
S
MAXIMUM RATINGS |
All Ratings: |
TC = 25°C unless otherwise specified. |
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APT20M16B2LL_LLL |
UNIT |
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VDSS |
Drain-Source Voltage |
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200 |
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Volts |
ID |
Continuous Drain Current 7 @ TC = 25°C |
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100 |
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Amps |
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IDM |
Pulsed Drain Current |
1 |
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400 |
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VGS |
Gate-Source Voltage Continuous |
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±30 |
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Volts |
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VGSM |
Gate-Source Voltage Transient |
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±40 |
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PD |
Total Power Dissipation @ TC = 25°C |
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694 |
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Watts |
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Linear Derating Factor |
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5.56 |
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W/°C |
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TJ,TSTG |
Operating and Storage Junction Temperature Range |
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-55 to 150 |
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°C |
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TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
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300 |
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IAR |
Avalanche Current 1 |
(Repetitive and Non-Repetitive) |
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100 |
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Amps |
EAR |
Repetitive Avalanche Energy 1 |
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50 |
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mJ |
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EAS |
Single Pulse Avalanche Energy 4 |
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3000 |
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STATICELECTRICALCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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TYP |
MAX |
UNIT |
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BVDSS |
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) |
200 |
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Volts |
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RDS(on) |
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 50A) |
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0.016 |
Ohms |
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I |
Zero Gate Voltage Drain Current (VDS = 200V, VGS = 0V) |
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100 |
µA |
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DSS |
Zero Gate Voltage Drain Current (VDS = 160V, VGS = 0V, TC = 125°C) |
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500 |
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IGSS |
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) |
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±100 |
nA |
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VGS(th) |
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) |
3 |
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5 |
Volts |
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CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Rev C 6-2004
APT Website - http://www.advancedpower.com
050-7014
DYNAMIC CHARACTERISTICS |
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APT20M16B2LL_LLL |
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Symbol |
Characteristic |
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Test Conditions |
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MIN |
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TYP |
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MAX |
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Ciss |
Input Capacitance |
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VGS = 0V |
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7220 |
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Coss |
Output Capacitance |
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2330 |
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VDS = 25V |
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pF |
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Crss |
Reverse Transfer Capacitance |
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f = 1 MHz |
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145 |
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Qg |
Total Gate Charge 3 |
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VGS = 10V |
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140 |
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Qgs |
Gate-Source Charge |
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VDD = 100V |
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65 |
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nC |
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Qgd |
Gate-Drain ("Miller") Charge |
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ID = 100A @ 25°C |
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120 |
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td(on) |
Turn-on Delay Time |
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RESISTIVESWITCHING |
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15 |
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VGS = 15V |
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tr |
Rise Time |
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31 |
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V |
DD |
= 100V |
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ns |
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td(off) |
Turn-off Delay Time |
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ID = 100A @ 25°C |
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29 |
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RG = 0.6Ω |
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tf |
Fall Time |
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4 |
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Eon |
Turn-on Switching Energy |
6 |
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INDUCTIVESWITCHING@25°C |
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850 |
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VDD = 133V, VGS = 15V |
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Eoff |
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930 |
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Turn-off Switching Energy |
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ID = 100A, RG = 5Ω |
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µJ |
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Eon |
Turn-on Switching Energy |
6 |
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INDUCTIVESWITCHING@125°C |
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935 |
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VDD = 133V, VGS = 15V |
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Eoff |
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Turn-off Switching Energy |
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ID = 100A, RG = 5Ω |
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985 |
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SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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MIN |
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TYP |
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MAX |
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UNIT |
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IS |
Continuous Source Current |
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(Body Diode) |
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100 |
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Amps |
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ISM |
Pulsed Source Current 1 |
(Body Diode) |
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400 |
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V |
Diode Forward Voltage 2 (V |
GS |
= 0V, I |
= -I |
100A) |
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1.3 |
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Volts |
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SD |
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S |
D |
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t rr |
Reverse Recovery Time (IS = -ID100A, dlS/dt = 100A/µs) |
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360 |
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ns |
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Q rr |
Reverse Recovery Charge (IS = -ID100A, dlS/dt = 100A/µs) |
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6.7 |
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µC |
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dv/dt |
Peak Diode Recovery dv/dt |
5 |
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5 |
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V/ns |
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THERMALCHARACTERISTICS |
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Symbol |
Characteristic |
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MIN |
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TYP |
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MAX |
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UNIT |
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RθJC |
Junction to Case |
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0.18 |
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°C/W |
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RθJA |
Junction to Ambient |
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40 |
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1 |
Repetitive Rating: Pulse width limited by maximum junction |
4 Starting Tj = +25°C, L = 0.60mH, RG = 25Ω, Peak IL = 100A |
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temperature |
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5 |
dv/dt numbers reflect the limitations of the test circuit rather than the |
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2 |
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% |
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device itself. I ≤ -I |
D |
100A |
di/ |
dt |
≤ 700A/µs V |
R |
≤ 200V |
T ≤ 150°C |
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3 See MIL-STD-750 Method 3471 |
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S |
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J |
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6 |
Eon includes diode reverse recovery. |
See figures 18, 20. |
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7 |
The maximum current is limited by lead temperature |
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APT Reserves the right to change, without notice, the specifications and information contained herein. |
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(°C/W) |
0.20 |
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0.16 |
0.9 |
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IMPEDANCE |
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0.5 |
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0.7 |
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0.12 |
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2004-6 |
THERMAL, |
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Note: |
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0.08 |
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P |
t2 |
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DM |
t1 |
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0.3 |
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C |
θJC |
0.04 |
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Duty Factor D = t1/t |
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Z |
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0.1 |
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2 |
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SINGLE PULSE |
Peak TJ = PDM x ZθJC + TC |
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0.05 |
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7014- |
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0 |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
1.0 |
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050 |
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RECTANGULARPULSEDURATION(SECONDS) |
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FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION |
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Typical Performance Curves
RC MODEL
Junction temp. (°C)
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0.0271 |
0.00899F |
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Power |
0.0656 |
0.0210F |
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(watts) |
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0.0859 |
0.293F |
Case temperature. (°C) 
FIGURE2, TRANSIENT THERMAL IMPEDANCE MODEL
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300 |
VDS> ID (ON) x |
RDS (ON)MAX. |
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250 µSEC. PULSE TEST |
TJ = -55°C |
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(AMPERES) |
250 |
@ <0.5 % DUTY CYCLE |
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200 |
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CURRENT |
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150 |
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DRAIN |
100 |
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50 |
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TJ = +25°C |
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D |
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TJ = +125°C |
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I |
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0 |
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0 |
2 |
4 |
6 |
8 |
10 |
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VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE4,TRANSFERCHARACTERISTICS |
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140 |
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(AMPERES) |
120 |
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100 |
Lead |
Limited |
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CURRENT |
80 |
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60 |
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DRAIN, |
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40 |
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I |
20 |
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D |
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0 |
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25 |
50 |
75 |
100 |
125 |
150 |
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TC, CASE TEMPERATURE (°C) |
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FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE |
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RESISTANCE |
2.5 |
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ID = 50A |
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VGS = 10V |
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SOURCE-TO-DRAINON (NORMALIZED) |
2.0 |
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1.5 |
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1.0 |
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0.5 |
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(ON), |
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DS |
0.0 |
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R |
-50 |
-25 |
0 25 |
50 75 |
100 125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
D
I , DRAIN CURRENT (AMPERES)
BV ,DRAIN-TO-SOURCEBREAKDOWN R (ON),DRAIN-TO-SOURCEONRESISTANCE DSS DS VOLTAGE(NORMALIZED)
(NORMALIZED)
V (TH),THRESHOLDVOLTAGE GS
APT20M16B2LL_LLL
300 |
VGS=15V |
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10V |
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250 |
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9V |
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200 |
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8.5V |
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150 |
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8V |
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100 |
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7.5V |
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50 |
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7V |
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6.5V |
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0 |
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0 |
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10 |
15 |
20 |
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30 |
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE3,LOW VOLTAGEOUTPUTCHARACTERISTICS
1.4
NORMALIZED TO
VGS = 10V @ 50A
1.3
1.2
1.1
VGS=10V 
1.0
0.9
VGS=20V
0.8
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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ID, DRAIN CURRENT (AMPERES) |
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FIGURE5,RDS(ON)vsDRAINCURRENT
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)
FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)
FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE
050-7014 Rev C 6-2004
050-7014 Rev C 6-2004
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400 |
OPERATIONHERE |
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(AMPERES) |
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LIMITEDBYRDS(ON) |
100 |
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50 |
100µS |
CURRENT |
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1mS |
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DRAIN, |
10 |
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10mS |
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D |
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T =+25°C |
I |
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C |
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TJ =+150°C |
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1 |
SINGLE PULSE |
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1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE10,MAXIMUMSAFEOPERATINGAREA
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16 |
ID = 100A |
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(VOLTS) |
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14 |
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VOLTAGE |
12 |
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VDS=40V |
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10 |
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VDS=100V |
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SOURCE-TO-GATE |
2 |
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VDS=160V |
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8 |
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6 |
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4 |
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, |
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GS |
0 |
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V |
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0 |
20 |
40 |
60 |
80 |
100 120 140 160 180 200 |
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Qg, TOTAL GATE CHARGE (nC) |
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FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
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100 |
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90 |
td(off) |
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80 |
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(ns) |
70 |
VDD = 133V |
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60 |
RG = 5Ω |
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d(off) |
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50 |
TJ = 125°C |
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t |
L = 100µH |
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and |
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40 |
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d(on) |
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30 |
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t |
td(on) |
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20 |
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10 |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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ID |
(A) |
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FIGURE 14, DELAY TIMES vs CURRENT |
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2000 |
VDD = 133V |
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RG = 5Ω |
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Eoff |
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TJ = 125°C |
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1500 |
L = 100µH |
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J) |
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EON includes |
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diode reverse recovery |
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( |
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off |
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E |
1000 |
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and |
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on |
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E |
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500 |
Eon |
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0 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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ID (A) |
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FIGURE 16, SWITCHING ENERGY vs CURRENT
APT20M16B2LL_LLL
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20,000 |
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10,000 |
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Ciss |
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(pF) |
5,000 |
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CAPACITANCE |
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Coss |
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1,000 |
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C, |
500 |
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100 |
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Crss |
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0 |
10 |
20 |
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30 |
40 |
50 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE |
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(AMPERES) |
220 |
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50 |
TJ =+150°C |
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CURRENT |
100 |
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TJ =+25°C |
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DRAIN |
10 |
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,REVERSE |
5 |
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DR |
1 |
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I |
0.5 |
0.7 |
0.9 |
1.1 |
1.3 |
1.5 |
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0.3 |
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VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE13,SOURCE-DRAINDIODEFORWARDVOLTAGE
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160 |
VDD = 133V |
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140 |
RG = 5Ω |
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TJ = 125°C |
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120 |
L = 100µH |
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(ns) |
100 |
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tf |
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80 |
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f |
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t |
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and |
60 |
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r |
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t |
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40 |
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tr |
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20 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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ID |
(A) |
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FIGURE 15, RISE AND FALL TIMES vs CURRENT |
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3500 |
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VDD = 133V |
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3000 |
ID = 100A |
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( J) |
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TJ = 125°C |
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Eoff |
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L = 100µH |
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2500 |
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EON |
includes |
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Eon |
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ENERGY |
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diode reverse recovery |
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SWITCHING |
2000 |
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1500 |
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1000 |
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500 |
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0 |
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0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
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10% |
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GateVoltage |
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td(on) |
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TJ125°C |
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tr |
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90% |
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Drain Current |
5% |
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5% |
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10% |
Drain Voltage |
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Switching Energy |
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Figure18,Turn-onSwitchingWaveformsandDefinitions
APT100S20
VDD |
ID |
VDS |
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT20M16B2LL_LLL
90%
GateVoltage
td(off)
TJ125°C
Drain Voltage tf 
90%
10%
0
Drain Current
Switching Energy
Figure 19,Turn-offSwitchingWaveformsandDefinitions
T-MAXTM (B2) Package Outline (B2LL) |
TO-264 (L) Package Outline (LLL) |
4.69 (.185) |
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4.60 (.181) |
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5.31 (.209) |
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15.49 (.610) |
5.21 (.205) |
19.51 (.768) |
1.49 (.059) |
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16.26 (.640) |
1.80 (.071) |
20.50 (.807) |
2.49 (.098) |
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2.01 (.079) |
3.10 (.122) |
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5.38 (.212) |
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3.48 (.137) |
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6.20 (.244) |
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5.79 (.228) |
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Drain |
20.80 (.819) |
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6.20 (.244) |
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21.46 (.845) |
Drain |
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26.49 (1.043) |
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25.48 (1.003) |
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4.50 (.177) Max. |
2.87 (.113) |
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3.12 (.123) |
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2.29 (.090) |
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1.65 (.065) |
2.29 (.090) |
2.69 (.106) |
0.40 (.016) |
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2.69 (.106) |
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0.79 (.031) |
19.81 (.780) |
2.13 (.084) |
19.81 (.780) |
Gate |
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20.32 (.800) |
Gate |
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21.39 (.842) |
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1.01 (.040) |
Drain |
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Drain |
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1.40 (.055) |
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Source |
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Source |
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0.48 |
(.019) |
0.76 |
(.030) |
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2.21 |
(.087) |
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0.84 |
(.033) |
1.30 |
(.051) |
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2.59 |
(.102) |
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2.79 |
(.110) |
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2.59 |
(.102) |
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5.45 (.215) BSC |
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3.00 |
(.118) |
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3.18 |
(.125) |
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2-Plcs. |
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These dimensions are equal to the TO-247 without the mounting hole. |
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5.45 (.215) BSC |
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2-Plcs. |
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Dimensions in Millimeters and (Inches) |
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Dimensions in Millimeters and (Inches) |
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APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7014 Rev C 6-2004