Добавил:

Upload Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Новосибирский государственный технический университет

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

APT30M61BLL

.pdf

Скачиваний:

Добавлен:

11.03.2016

Размер:

105.99 Кб

Скачать

☆

APT30M61BLL

APT30M61SLL

300V 54A 0.061Ω

POWER MOS 7 R MOSFET

Power MOS 7® is a new generation of low loss, high voltage, N-Channel	D3PAK
	TO-247

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

• Lower Input Capacitance

• Increased Power Dissipation

• Lower Miller Capacitance

• Easier To Drive

• Lower Gate Charge, Qg

• TO-247 or Surface Mount D3PAK Package

MAXIMUM RATINGS

All Ratings: TC = 25°C unless otherwise specified.

Symbol

Parameter

APT30M61BLL-SLL

UNIT

VDSS

Drain-Source Voltage

300

Volts

Continuous Drain Current @ TC = 25°C

Amps

IDM

Pulsed Drain Current

216

VGS

Gate-Source Voltage Continuous

±30

Volts

VGSM

Gate-Source Voltage Transient

±40

Total Power Dissipation @ TC = 25°C

403

Watts

Linear Derating Factor

3.23

W/°C

TJ,TSTG

Operating and Storage Junction Temperature Range

-55 to 150

°C

Lead Temperature: 0.063" from Case for 10 Sec.

300

IAR

Avalanche Current 1

(Repetitive and Non-Repetitive)

Amps

EAR

Repetitive Avalanche Energy 1

EAS

Single Pulse Avalanche Energy 4

1300

STATIC ELECTRICAL CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

BVDSS

Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)

300

Volts

RDS(on)

Drain-Source On-State Resistance 2 (VGS = 10V, 27A)

0.061

Ohms

Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)

100

µA

DSS

Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)

500

IGSS

Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)

±100

VGS(th)

Gate Threshold Voltage (VDS = VGS, ID = 1mA)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

050-7156 Rev A 1-2004

DYNAMIC CHARACTERISTICS

APT30M61BLL - SLL

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

3720

Coss

Output Capacitance

920

VDS = 25V

Crss

Reverse Transfer Capacitance

f = 1 MHz

Total Gate Charge 3

VGS = 10V

Qgs

Gate-Source Charge

VDD = 150V

Qgd

Gate-Drain ("Miller") Charge

ID = 54A @ 25°C

td(on)

Turn-on Delay Time

RESISTIVE SWITCHING

VGS = 15V

Rise Time

= 150V

td(off)

Turn-off Delay Time

ID = 54A @ 25°C

RG = 0.6Ω

Fall Time

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 25°C

367

VDD = 200V, VGS = 15V

Eoff

319

Turn-off Switching Energy

ID = 54A, RG = 5Ω

µJ

Eon

Turn-on Switching Energy

INDUCTIVE SWITCHING @ 125°C

451

VDD = 200V, VGS = 15V

Eoff

Turn-off Switching Energy

ID = 54A, RG = 5Ω

348

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current

(Body Diode)

Amps

ISM

Pulsed Source Current

(Body Diode)

216

Diode Forward Voltage

2 (V

= 0V, I

= -54A)

1.3

Volts

t rr

Reverse Recovery Time (IS = -54A, dlS/dt = 100A/µs)

440

Q rr

Reverse Recovery Charge

(IS = -54A, dlS/dt = 100A/µs)

5.8

µC

dv/dt

Peak Diode Recovery dv/dt

V/ns

THERMAL CHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

Rθ JC

Junction to Case

0.31

°C/W

Rθ JA

Junction to Ambient

Repetitive Rating: Pulse width limited by maximum junction

Starting Tj = +25°C, L = 0.89mH, RG = 25Ω , Peak IL = 54A

temperature

dv/dt numbers reflect the limitations of the test circuit rather than the

Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

device itself. IS ≤ -54A

di/dt ≤ 700A/µs

VR ≤

300V TJ ≤

150°C

3 See MIL-STD-750 Method 3471

6 Eon includes diode reverse recovery.

See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and information contained herein.

1-2004	THERMALIMPEDANCE (°C/W)
	,
A	JC
	θ
Rev	Z
050-7156

0.35

0.30

0.25

0.20

0.15

0.10

0.05

10-5

0.9

0.7

0.5

			Note:
0.3			DM	t	1
0.3			P		1
					t2
0.1	SINGLE PULSE		Duty Factor D = t1/t2
0.05			Peak TJ = PDM x Zθ JC + TC
0.05
10-4	10-3	10-2	10-1		1.0

RECTANGULARPULSEDURATION(SECONDS)

FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION

Typical Performance Curves

RC MODEL
Junction
temp. (°C)
0.119	0.0135F
Power
(watts)
0.191	0.319F

Case temperature. (°C)

FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL

	160
	VDS> ID (ON) x			RDS (ON)MAX.
	140	250µSEC. PULSE TEST
(AMPERES)	140	@ <0.5 % DUTY CYCLE
		@ <0.5 % DUTY CYCLE
	120
	120
CURRENT	100
CURRENT	80
	80
	60			TJ = -55°C
DRAIN,	60
DRAIN,	40			TJ = +25°C
				TJ = +25°C

D	20	T	J	= +125°C
I			J

	0
	0	2		4	6	8	10
	VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
		FIGURE4,TRANSFERCHARACTERISTICS
	60

(AMPERES)	50
	50
	40
CURRENT	40
CURRENT	30
	30
,DRAIN	20
	20
	10
D
D
I
	0
	0
	25		50		75	100	125	150
				TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
RESISTANCE	2.5
RESISTANCE			ID = 27A
			ID = 27A
ONSOURCE-TO-DRAIN (NORMALIZED)	2.0	VGS = 10V


	0.5
	0.5
	1.5
	1.5
(ON),	1.0






DS	0.0
R	-50		-25 0		25 50	75	100 125	150
	-50		-25 0		25 50	75	100 125	150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

I , DRAIN CURRENT (AMPERES)

BV ,DRAIN-TO-SOURCEBREAKDOWN R (ON),DRAIN-TO-SOURCEONRESISTANCE DSS DS VOLTAGE(NORMALIZED)

(NORMALIZED)

V (TH),THRESHOLDVOLTAGE GS

180					APT30M61BLL - SLL
180
160		15V		10V
160				10V
140
120				9V
100
80					8V
60
40						7V
20						6V
						6V
0
0	5	10	15	20	25	30

VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS

1.40

NORMALIZED TO

VGS = 10V @ 27A

1.30

1.20

VGS=10V

1.10

1.00

VGS=20V

0.90

0.80

0	20	40	60	80	100	120
	ID, DRAIN CURRENT (AMPERES)

FIGURE 5, RDS(ON) vs DRAIN CURRENT

1.20

1.15

1.10

1.05

1.00

0.95

0.90 -50 -25 0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE

1.2

1.1

1.0

0.9

0.8

0.7

0.6

-50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)

FIGURE 9,THRESHOLDVOLTAGEvsTEMPERATURE

050-7156 Rev A 1-2004

Typical Performance Curves
	216
	100		OPERATIONHERE
(AMPERES)	100		LIMITEDBYRDS(ON)
(AMPERES)												100µS
												100µS
CURRENT	10											1mS
	10
, DRAIN			TC =+25°C									10mS
I			TC =+25°C
D
			TJ =+150°C
	1		SINGLE PULSE
		1			5	10			50	100		300
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE 10, MAXIMUM SAFE OPERATING AREA
(VOLTS)	16		ID = 54				VDS = 60V
(VOLTS)	14						VDS = 60V
VOLTAGE	14
VOLTAGE	12								VDS = 240V
	12
SOURCE-TO-GATE	10				VDS = 150V
SOURCE-TO-GATE	8
	8
	6
	4
,	2
GS
V	0
	0	0	10	20	30	40	50	60	70	80	90	100
				Qg, TOTAL GATE CHARGE (nC)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

	50
							td(off)
	40
(ns)		VDD = 200V
d(off)	30	RG = 5Ω
d(off)		T = 125°C
t		J
and		L = 100µH
and	20
d(on)	20
d(on)
t			td(on)
			td(on)
	10
	0
	10	20	30	40	50	60	70	80	90

ID (A)

FIGURE 14, DELAY TIMES vs CURRENT

	900	V	= 200V
		DD
	800	RG = 5Ω
	700	TJ = 125°C
( J)	700	L = 100µH
( J)	600	EON	includes
ENERGY	600	diode reverse			recovery.
	500
	400				Eon
SWITCHING	400
	300
	200				Eoff
					Eoff
	100
	010		20	30	40	50	60	70	80	90
						ID (A)

FIGURE 16, SWITCHING ENERGY vs CURRENT

APT30M61BLL - SLL

	10,000
	5,000	Ciss
(pF)	1,000	Coss
CAPACITANCE		Coss
CAPACITANCE	100
C,
		Crss

	10 0		10		20		30	40		50
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE11,CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE
(AMPERES)	200
(AMPERES)	50
	100
CURRENT			TJ =+150°C				TJ =+25°C
CURRENT

DRAIN	10
	10
,REVERSE	5
,REVERSE
DR	10.3
I	10.3		0.5		0.7	0.9	1.1		1.3	1.5
	VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
	FIGURE 13,SOURCE-DRAINDIODEFORWARDVOLTAGE
	90	VDD = 200V
	80	VDD = 200V
	80	RG = 5Ω
	70	TJ = 125°C					tf
	70	L = 100µH
	60
(ns)	50
f
t
and	40
	40
r
t	30
	30
	20				tr
					tr
	10
	0
	10		20	30	40	50	60	70	80	90
						ID (A)
	FIGURE 15, RISE AND FALL TIMES vs CURRENT
	1200	VDD = 200V
		VDD = 200V
	1000	ID = 54A							Eoff
	1000	TJ = 125°C							Eoff
( J)		L = 100µH
( J)	600	EON	includes
ENERGY	600
	800	diode reverse recovery.
SWITCHING							Eon
SWITCHING	400
	400
	200
	0

0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms)

FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE

					Gate Voltage
	10 %				Gate Voltage		TJ = 125 C
	10 %

td(on)

		tr
						Drain Current
						Drain Current

				90 %
5 %			10 %	5 %
5 %						Drain Voltage
						Drain Voltage

Switching Energy

Figure 18, Turn-on Switching Waveforms and Definitions

APT30DS30

VDD

VCE

D.U.T.

Figure 20, Inductive Switching Test Circuit

APT30M61BLL - SLL

90%

Gate Voltage

= 125 C

td(off)

90%

Drain Voltage

10%

Drain Current

Switching Energy

Figure 19, Turn-off Switching Waveforms and Definitions

TO-247 Package Outline

D3PAK Package Outline

4.69 (.185)	6.15 (.242) BSC		Drain Sink)(Heat	4.98	(.196)		15.95 (.628)			13.41 (.528)
5.31 (.209)	6.15 (.242) BSC		Drain Sink)(Heat	5.08	(.200)		16.05 (.632)			13.51 (.532)
5.31 (.209)	15.49 (.610)			5.08	(.200)		16.05 (.632)		1.04 (.041)	13.51 (.532)
1.49 (.059)	16.26 (.640)			1.47	(.058)				1.04 (.041)
2.49 (.098)				1.57	(.062)				1.15 (.045)
2.49 (.098)				1.57	(.062)
		5.38 (.212)
		6.20 (.244)
Drain							Revised		13.79 (.543)	Revised	11.51 (.453)
	20.80 (.819)						Revised		13.79 (.543)	8/29/97	11.61 (.457)
	21.46 (.845)						4/18/95		13.99 (.551)
		3.50 (.138)
		3.81 (.150)
				0.46	(.018)
				0.56	(.022) {3 Plcs}				1.27 (.050)
				0.020 (.001)					1.27 (.050)
		2.87 (.113)		0.020 (.001)					1.40 (.055)	3.81 (.150)
	4.50 (.177) Max.	2.87 (.113)		0.178 (.007)				1.98 (.078)		3.81 (.150)
		3.12 (.123)		2.67	(.105)			1.98 (.078)		4.06 (.160)
				2.67	(.105)			2.08 (.082)		(Base of Lead)
0.40 (.016)		1.65 (.065)		2.84	(.112)	1.22 (.048)		2.08 (.082)		(Base of Lead)
0.40 (.016)		1.65 (.065)		2.84	(.112)	1.22 (.048)
0.79 (.031)	19.81 (.780)	2.13 (.084)				1.32 (.052)				Heat Sink (Drain)
	20.32 (.800)	Gate						5.45 (.215) BSC		and Leads
	1.01 (.040)	Gate						5.45 (.215) BSC		and Leads
	1.40 (.055)	Drain						{2 Plcs.}		are Plated
		Drain
		Source
2.21 (.087)									Source
2.21 (.087)									Drain
2.59 (.102)	5.45 (.215) BSC								Drain
	2-Plcs.								Gate

Dimensions in Millimeters and (Inches)	Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522

050-7156 Rev A 1-2004

Соседние файлы в папке Паспортные данные MOSFET

#
11.03.2016163.28 Кб17APT20M20BLLL.pdf
#
11.03.2016212.31 Кб17APT20M34BLL.pdf
#
11.03.2016173.05 Кб17APT20M36BLL.pdf
#
11.03.2016157.5 Кб17APT30M30LLL.pdf
#
11.03.2016174.49 Кб17APT30M36LLL.pdf
#
11.03.2016105.99 Кб17APT30M61BLL.pdf
#
11.03.201694.26 Кб17APT30M75BLL.pdf
#
11.03.201663.61 Кб17APT40M70LVR.pdf
#
11.03.201698.9 Кб17APT50M50L2LL.pdf
#
11.03.2016165.21 Кб17APT50M60L2VR.pdf
#
11.03.2016102.82 Кб17APT50M65LLL.pdf