СПП1 / СППП. РГЗ / Паспортные данные MOSFET / APT50M60L2VR
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APT50M60L2VR
500V 77A 0.060Ω
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POWER MOS V® MOSFET |
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TO-264 |
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Power MOS V® is a new generation of high voltage N-Channel enhancement |
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Max |
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mode power MOSFETs. This new technology minimizes the JFET effect, |
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increases packing density and reduces the on-resistance. Power MOS V® |
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also achieves faster switching speeds through optimized gate layout. |
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• TO-264 MAX Package |
• Avalanche Energy Rated |
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• Faster Switching |
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G |
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• Lower Leakage |
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MAXIMUM RATINGS |
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All Ratings: TC = 25°C unless otherwise specified. |
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Symbol |
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APT50M60L2VR |
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UNIT |
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VDSS |
Drain-Source Voltage |
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500 |
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Volts |
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ID |
Continuous Drain Current @ TC = 25°C |
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77 |
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Amps |
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IDM |
Pulsed Drain Current |
1 |
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308 |
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VGS |
Gate-Source Voltage Continuous |
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±30 |
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Volts |
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VGSM |
Gate-Source Voltage Transient |
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±40 |
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PD |
Total Power Dissipation @ TC = 25°C |
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833 |
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Watts |
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Linear Derating Factor |
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6.67 |
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W/°C |
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TJ,TSTG |
Operating and Storage Junction Temperature Range |
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-55 to 150 |
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°C |
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TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
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300 |
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IAR |
Avalanche Current 1 |
(Repetitive and Non-Repetitive) |
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77 |
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Amps |
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EAR |
Repetitive Avalanche Energy 1 |
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50 |
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mJ |
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EAS |
Single Pulse Avalanche Energy 4 |
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3200 |
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STATICELECTRICALCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
MIN |
TYP |
MAX |
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BVDSS |
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) |
500 |
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Volts |
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RDS(on) |
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 38.5A) |
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0.060 |
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Ohms |
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I |
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) |
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25 |
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µA |
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DSS |
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C) |
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250 |
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IGSS |
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) |
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±100 |
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nA |
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VGS(th) |
Gate Threshold Voltage (VDS = VGS, ID = 5mA) |
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4 |
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Volts |
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CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Rev A 5-2004
APT Website - http://www.advancedpower.com
050-5986
DYNAMIC CHARACTERISTICS |
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APT50M60L2VR |
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Symbol |
Characteristic |
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Test Conditions |
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TYP |
MAX |
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Ciss |
Input Capacitance |
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VGS = 0V |
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10600 |
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Coss |
Output Capacitance |
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1800 |
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pF |
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VDS = 25V |
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Crss |
Reverse Transfer Capacitance |
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f = 1 MHz |
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795 |
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Qg |
Total Gate Charge 3 |
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VGS = 10V |
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560 |
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Qgs |
Gate-Source Charge |
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VDD = 250V |
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70 |
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nC |
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ID = 77A @ 25°C |
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Qgd |
Gate-Drain ("Miller") Charge |
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285 |
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td(on) |
Turn-on Delay Time |
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RESISTIVESWITCHING |
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20 |
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VGS = 15V |
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tr |
Rise Time |
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25 |
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= 250V |
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ns |
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DD |
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td(off) |
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80 |
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Turn-off Delay Time |
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ID = 77A @ 25°C |
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RG = 0.6Ω |
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tf |
Fall Time |
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8 |
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Eon |
Turn-on Switching Energy |
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INDUCTIVESWITCHING@25°C |
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1510 |
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VDD = 333V, VGS = 15V |
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Eoff |
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3450 |
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Turn-off Switching Energy |
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ID = 77A, RG = 5Ω |
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µJ |
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Eon |
Turn-on Switching Energy |
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INDUCTIVESWITCHING@125°C |
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2065 |
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VDD = 333V, VGS = 15V |
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Eoff |
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Turn-off Switching Energy |
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ID = 77A, RG = 5Ω |
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3830 |
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SOURCE-DRAINDIODERATINGSANDCHARACTERISTICS |
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Symbol |
Characteristic / Test Conditions |
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MIN |
TYP |
MAX |
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UNIT |
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I |
Continuous Source Current (Body Diode) |
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77 |
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S |
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Amps |
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ISM |
Pulsed Source Current 1 |
(Body Diode) |
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308 |
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VSD |
Diode Forward Voltage 2 (VGS = 0V, IS = -ID77A) |
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1.3 |
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Volts |
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t rr |
Reverse Recovery Time (IS = -ID77A, dlS/dt = 100A/µs) |
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680 |
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ns |
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Q rr |
Reverse Recovery Charge (IS = -ID77A, dlS/dt = 100A/µs) |
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µC |
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dv/dt |
Peak Diode Recovery dv/dt |
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V/ns |
THERMALCHARACTERISTICS |
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Symbol |
Characteristic |
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MIN |
TYP |
MAX |
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RθJC |
Junction to Case |
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0.15 |
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°C/W |
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RθJA |
Junction to Ambient |
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40 |
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1 |
Repetitive Rating: Pulse width limited by maximum junction |
4 Starting Tj = +25°C, L = 1.08mH, RG = 25Ω, Peak IL = 77A |
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temperature |
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5 |
dv/dt numbers reflect the limitations of the test circuit rather than the |
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2 |
Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% |
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device itself. IS ≤ -ID77A |
di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C |
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3 See MIL-STD-750 Method 3471 |
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6 |
Eon includes diode reverse recovery. See figures 18, 20. |
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APT Reserves the right to change, without notice, the specifications and information contained herein.
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0.16 |
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(°C/W) |
0.14 |
0.9 |
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0.12 |
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IMPEDANCE |
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0.7 |
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0.10 |
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2004-5 |
THERMAL |
0.08 |
0.5 |
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0.06 |
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Note: |
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DM |
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0.04 |
0.3 |
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t1 |
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A |
θJC |
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t2 |
Rev |
Z |
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Duty Factor D = t1/t2 |
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0.02 |
0.1 |
SINGLE PULSE |
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0.05 |
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Peak TJ = PDM x ZθJC + TC |
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0 |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
1.0 |
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050 |
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RECTANGULARPULSEDURATION(SECONDS) |
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FIGURE1,MAXIMUMEFFECTIVETRANSIENTTHERMALIMPEDANCE,JUNCTION-TO-CASEvsPULSEDURATION |
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Typical Performance Curves
RC MODEL
Junction temp. (°C)
0.0545 0.0487F
Power (watts)
0.0957 0.922F
Case temperature. (°C) 
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
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140 |
VDS> ID (ON) x |
RDS (ON)MAX. |
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250µSEC. PULSE TEST |
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(AMPERES) |
120 |
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@ <0.5 % DUTY CYCLE |
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100 |
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80 |
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CURRENT |
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60 |
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TJ = -55°C |
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TJ = +25°C |
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40 |
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20 |
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TJ = +125°C |
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D |
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I |
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0 |
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VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE4, TRANSFERCHARACTERISTICS
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(AMPERES) |
70 |
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DRAIN, |
30 |
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I |
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25 |
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100 |
125 |
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150 |
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TC, CASE TEMPERATURE (°C) |
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FIGURE6,MAXIMUMDRAINCURRENTvsCASETEMPERATURE |
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RESISTANCE |
2.5 |
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ID |
= 38.5A |
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SOURCE-TO-DRAINON (NORMALIZED) |
2.0 |
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VGS = 10V |
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1.5 |
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1.0 |
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(ON), |
0.5 |
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DS |
0.0 |
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-25 0 |
25 50 |
75 |
100 125 |
150 |
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R |
-50 |
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TJ, JUNCTION TEMPERATURE (°C)
FIGURE8,ON-RESISTANCEvs.TEMPERATURE
APT50M60L2VR
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200 |
VGS =15 & 10V |
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8V |
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180 |
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(AMPERES) |
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120 |
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160 |
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140 |
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7.5V |
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CURRENT |
100 |
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7V |
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80 |
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DRAIN |
40 |
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6.5V |
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60 |
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, |
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6V |
D |
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I |
20 |
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5.5V |
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0 0 |
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5 |
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10 |
15 |
20 |
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25 |
30 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE3,LOW VOLTAGE OUTPUTCHARACTERISTICS |
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RESISTANCE |
1.40 |
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NORMALIZED TO |
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VGS = 10V |
@ |
38.5A |
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1.30 |
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ON |
1.20 |
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SOURCE-TO-DRAIN |
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VGS=10V |
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1.10 |
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1.00 |
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VGS=20V |
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(ON), |
0.90 |
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DS |
0.80 |
0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
R |
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ID, DRAIN CURRENT (AMPERES)
FIGURE5,RDS(ON)vsDRAINCURRENT
BREAKDOWNSOURCE-TO-DRAIN |
(NORMALIZED)VOLTAGE |
1.15 |
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1.10 |
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1.05 |
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1.00 |
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0.95 |
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, |
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0.90 |
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DSS |
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BV |
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0.85-50 |
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-25 |
0 |
25 |
50 |
75 |
100 125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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FIGURE7,BREAKDOWNVOLTAGEvsTEMPERATURE |
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1.2 |
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VOLTAGETHRESHOLD(TH), |
(NORMALIZED) |
1.1 |
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1.0 |
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2004- |
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0.9 |
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0.8 |
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GS |
0.7 |
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5 |
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V |
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A |
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0.6 |
-25 |
0 |
25 |
50 |
75 |
100 125 |
150 |
Rev |
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-50 |
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TC, CASE TEMPERATURE (°C) |
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5986 |
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FIGURE9,THRESHOLDVOLTAGEvsTEMPERATURE |
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050- |
050-5986 Rev A 5-2004
|
308 |
OPERATIONHERE |
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LIMITEDBYRDS(ON) |
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(AMPERES) |
100 |
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100µS |
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50 |
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CURRENT |
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1mS |
10 |
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,DRAIN |
5 |
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10mS |
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TC=+25°C |
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D |
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I |
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TJ =+150°C |
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11 |
SINGLE PULSE |
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10 |
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100 |
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500 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
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FIGURE10,MAXIMUMSAFEOPERATINGAREA |
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(VOLTS) |
16 |
ID = 77A |
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VDS = 100V |
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VOLTAGE |
12 |
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VDS = 250V |
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GATE-TO-SOURCE |
8 |
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4 |
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VDS = 400V |
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, |
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GS |
00 |
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V |
100 |
200 |
300 |
400 |
500 |
600 |
700 |
800 |
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Qg, TOTAL GATE CHARGE (nC) |
|
||||||
FIGURE12,GATECHARGESvsGATE-TO-SOURCEVOLTAGE
|
700 |
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600 |
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td(off) |
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(ns) |
500 |
VDD = 333V |
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RG = 5Ω |
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d(off) |
400 |
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T |
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= 125°C |
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J |
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t |
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and |
300 |
L = 100µH |
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d(on) |
200 |
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t |
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100 |
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td(on) |
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0 |
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10 |
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30 |
50 |
70 |
90 |
110 |
130 |
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ID (A) |
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FIGURE 14, DELAY TIMES vs CURRENT |
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7,000 |
VDD = 333V |
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6,000 |
RG = 5Ω |
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T |
J |
= 125°C |
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( J) |
5,000 |
L = 100µH |
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EON includes |
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ENERGY |
|
diode reverse |
recovery. |
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4,000 |
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SWITCHING |
3,000 |
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2,000 |
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Eoff |
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Eon |
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1,000 |
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0 |
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10 |
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30 |
50 |
70 |
90 |
110 |
130 |
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ID (A) |
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|
FIGURE 16, SWITCHING ENERGY vs CURRENT
APT50M60L2VR
|
20,000 |
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10,000 |
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Ciss |
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(pF) |
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CAPACITANCEC, |
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Coss |
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1,000 |
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Crss |
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100 |
0 |
10 |
20 |
30 |
40 |
50 |
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VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) |
|||||
|
FIGURE11, CAPACITANCEvsDRAIN-TO-SOURCEVOLTAGE |
||||||
(AMPERES)CURRENT |
200 |
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100 |
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TJ =+25°C |
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DRAINREVERSE, |
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TJ =+150°C |
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10 |
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DR |
1 |
0.3 |
0.5 |
0.7 |
0.9 |
1.1 |
1.3 |
1.5 |
I |
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|||||||
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VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) |
||||||
|
FIGURE13, SOURCE-DRAINDIODEFORWARDVOLTAGE |
|||||||
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250 |
VDD = 333V |
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RG = 5Ω |
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200 |
TJ = 125°C |
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L = 100µH |
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tf |
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(ns) |
150 |
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f |
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and t |
100 |
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r |
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t |
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50 |
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tr |
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0 |
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10 |
30 |
50 |
70 |
90 |
110 |
130 |
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ID (A) |
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FIGURE 15, RISE AND FALL TIMES vs CURRENT |
|||||||
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25,000 |
VDD = 333V |
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ID = 77A |
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( J) |
20,000 |
TJ = 125°C |
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L = 100µH |
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|
EON |
includes |
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Eoff |
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ENERGY |
|
diode reverse recovery. |
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SWITCHING |
15,000 |
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10,000 |
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Eon |
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5,000 |
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0 |
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0 5 10 15 20 25 30 35 40 45 50 RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
10% |
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GateVoltage |
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TJ125°C |
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td(on) |
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90% |
Drain Current |
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tr |
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5% |
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5% |
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10% |
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Drain Voltage |
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Switching Energy |
|
Figure18,Turn-onSwitchingWaveforms and Definitions
APT60DF60
VDD |
IC |
VCE |
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
APT50M60L2VR
90%
|
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GateVoltage |
TJ125°C |
|||||
td(off) |
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Drain Voltage |
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90% |
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tf |
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10% |
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0 |
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Switching Energy |
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Drain Current |
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|||
Figure 19, Turn-off Switching Waveforms and Definitions
Drain
TO-264 MAXTM(L2) Package Outline
4.60 |
(.181) |
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5.21 |
(.205) |
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19.51 |
(.768) |
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1.80 |
(.071) |
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20.50 |
(.807) |
||
2.01 |
(.079) |
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5.79 (.228)
6.20(.244)
25.48(1.003)
26.49(1.043)
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2.29 (.090) |
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2.29 (.090) |
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2.69 (.106) |
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2.69 (.106) |
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19.81 (.780) |
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Gate |
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21.39 (.842) |
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Drain |
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Source |
0.48 |
(.019) |
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0.76 (.030) |
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0.84 |
(.033) |
1.30 (.051) |
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2.59 |
(.102) |
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2.79 (.110) |
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3.00 |
(.118) |
3.18 (.125) |
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5.45 (.215) BSC |
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2-Plcs. |
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||||||||||||||||
Rev A 5-2004
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-5986