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APT40M70LVR

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APT40M70LVR

400V 57A 0.070Ω

POWER MOS V®

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout..

• Faster Switching	• 100% Avalanche Tested
• Lower Leakage	• Popular TO-264 Package

TO-264

MAXIMUM RATINGS						All Ratings: TC = 25°C unless otherwise specified.
Symbol		Parameter					APT40M70LVR			UNIT

VDSS		Drain-Source Voltage						400		Volts
ID		Continuous Drain Current @ TC = 25°C						57		Amps
IDM		Pulsed Drain Current 1						228		Amps
IDM		Pulsed Drain Current 1						228
VGS		Gate-Source Voltage Continuous						±30		Volts
VGSM		Gate-Source Voltage Transient						±40		Volts
VGSM		Gate-Source Voltage Transient						±40
PD		Total Power Dissipation @ TC = 25°C						520		Watts
PD		Linear Derating Factor						4.16		W/°C
		Linear Derating Factor						4.16		W/°C

TJ,TSTG		Operating and Storage Junction Temperature Range						-55 to 150		°C
TL		Lead Temperature: 0.063" from Case for 10 Sec.						300		°C
TL		Lead Temperature: 0.063" from Case for 10 Sec.						300
IAR		Avalanche Current 1 (Repetitive and Non-Repetitive)						57		Amps
EAR		Repetitive Avalanche Energy 1						50		mJ
EAS		Single Pulse Avalanche Energy 4						2500		mJ
EAS		Single Pulse Avalanche Energy 4						2500
STATIC ELECTRICAL CHARACTERISTICS

Symbol		Characteristic / Test Conditions					MIN	TYP	MAX	UNIT

BV		Drain-Source Breakdown Voltage (V	= 0V, I			μ	400			Volts
	DSS	Drain-Source Breakdown Voltage (V	= 0V, I	D	= 250 A)		400			Volts
	DSS	GS		D
ID(on)		On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V)					57			Amps
RDS(on)		Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.])							0.070	Ohms
IDSS		Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)							25	μA
IDSS		Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)							250	μA
									250
IGSS		Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)							±100	nA
VGS(th)		Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)					2		4	Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

USA	APT Website - http://www.advancedpower.com
USA
405 S.W. Columbia Street		Bend, Oregon 97702-1035	Phone: (541) 382-8028	FAX: (541) 388-0364
EUROPE
Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord		F-33700 Merignac - France	Phone: (33) 5 57 92 15 15	FAX: (33) 5 56 47 97 61

050-5543 Rev B

DYNAMIC CHARACTERISTICS

APT40M70LVR

Symbol

Characteristic

Test Conditions

MIN

TYP

MAX

UNIT

Ciss

Input Capacitance

VGS = 0V

7410

8890

Coss

Output Capacitance

= 25V

1140

1600

Crss

Reverse Transfer Capacitance

f = 1 MHz

450

675

Total Gate Charge 3

= 10V

330

495

Qgs

Gate-Source Charge

VDD = 0.5 VDSS

Qgd

Gate-Drain ("Miller") Charge

ID = ID[Cont.] @ 25°C

127

190

td(on)

Turn-on Delay Time

= 15V

Rise Time

VDD = 0.5 VDSS

td(off)

Turn-off Delay Time

ID = ID[Cont.] @ 25°C

RG = 0.6Ω

Fall Time

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol

Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Continuous Source Current (Body Diode)

Amps

ISM

Pulsed Source Current

(Body Diode)

228

VSD

Diode Forward Voltage

(VGS = 0V, IS = -ID[Cont.])

1.3

Volts

t rr

Reverse Recovery Time

(IS = -ID[Cont.], dlS/dt = 100A/μs)

540

Q rr

Reverse Recovery Charge (IS = -ID[Cont.], dlS/dt = 100A/μs)

11.8

μC

THERMAL CHARACTERISTICS

Symbol

Characteristic

MIN

TYP

MAX

UNIT

RθJC

Junction to Case

0.24

°C/W

RθJA

Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

See MIL-STD-750 Method 3471

temperature.

Starting Tj = +25°C, L = 1.54mH, RG = 25Ω, Peak IL = 57A

2Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein.

	C/W)	0.3
	C/W)		D=0.5
			D=0.5
	(°	0.1
	(°		0.05
	IMPEDANCE		0.05
		0.05	0.2
			0.1
	THERMAL,	0.01		SINGLE PULSE			Note:	t2
	THERMAL,	0.01		SINGLE PULSE			P	t2
		0.005	0.02				DM	t1
		0.005	0.01
			0.01
RevB	θJC						Duty Factor D =		t1	/t
	Z									2
	Z						Peak TJ = PDM x ZθJC + TC
5543		10-5	10-4	10-3	10-2	10-1	Peak TJ = PDM x ZθJC + TC
5543		10-5	10-4	10-3	10-2	10-1		1.0		10
		0.001
-				RECTANGULAR PULSE DURATION (SECONDS)
050				RECTANGULAR PULSE DURATION (SECONDS)
050			FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

	APT40M70LVR
	100	VGS=6V, 7V, 10V & 15V
		VGS=6V, 7V, 10V & 15V
(AMPERES)	80
				5.5V
	60
CURRENT	60
				5V
	40

DRAIN	20			4.5V
DRAIN
,
,
D
I
				4V
	0	50	100	150	200
	0	50	100	150	200
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS

	100			TJ = -55°C
				TJ = -55°C
(AMPERES)	80			TJ = +25°C
	80			TJ = +125°C
				TJ = +125°C
	60	VDS> ID (ON) x RDS (ON)MAX.
		250μSEC. PULSE TEST
CURRENT		250μSEC. PULSE TEST
		@ <0.5 % DUTY CYCLE
	40

DRAIN	20	TJ = +125°C
DRAIN	20			= +25°C
,		T			T		= -55°C
D		T	J		T	J	= -55°C
I			J			J
	0		2	4			6	8
	0		2	4			6	8
	VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS

	60
(AMPERES)	50
	40

CURRENT	30
CURRENT	20
,DRAIN	20
,DRAIN	10
D	10
D
I
	0	50	75	100	125	150
	25	50	75	100	125	150
		TC, CASE TEMPERATURE (°C)

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE

RESISTANCE		2.5
			ID = 0.5	ID [Cont.]
SOURCE-TO-DRAINON	(NORMALIZED)	2.0	VGS = 10V
			VGS = 10V


		1.5


		1.0


(ON),		0.5




DS		0.0
DS		0.0		0 25 50 75 100 125 150
R		-50 -25		0 25 50 75 100 125 150
			TJ, JUNCTION TEMPERATURE (°C)

FIGURE 8, ON-RESISTANCE vs. TEMPERATURE

	100		VGS=15V
			VGS=15V
(AMPERES)	80		VGS=10V
	80	VGS=6V & 7V
		VGS=6V & 7V			5.5V
					5.5V
	60
CURRENT	60
					5V
	40

DRAIN	20				4.5V
DRAIN
,
,
D
I
					4V
	0	2	4	6	8
	0	2	4	6	8
	VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS

RESISTANCEON	1.8
	1.8
		NORMALIZED TO
		VGS = 10V @ 0.5 ID [Cont.]
SOURCE	1.6
SOURCE	1.4	VGS=10V
	1.4
-	1.2
-TO	1.2			VGS=20V
-TO				VGS=20V
DRAIN	1.0
(ON),
DS	0.8	40	80	120	160	200
R	0	40	80	120	160	200
		ID, DRAIN CURRENT (AMPERES)
		FIGURE 5, RDS(ON) vs DRAIN CURRENT

BREAKDOWNSOURCE	(NORMALIZED)	1.15
BREAKDOWNSOURCE	(NORMALIZED)	1.10
		1.10
DRAIN-TO-	VOLTAGE	1.05
DRAIN-TO-	VOLTAGE	0.95
		1.00
,
DSS
BV		0.90
		0.90

-50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C)

FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE

	1.2
THRESHOLDVOLTAGE (NORMALIZED)	1.1
	1.0
	0.8
	0.9
(TH),
GS	0.7
V
	0.6

-50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C)

FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE

050-5543 Rev B

														APT40M70LVR
	300							10μS		30,000
			OPERATION HERE					10μS
			OPERATION HERE
CURRENTDRAIN, (AMPERES)	.5		LIMITED BY RDS (ON)					100μS	CAPACITANCEC, (pF)
CURRENTDRAIN, (AMPERES)	.5		TJ =+150°C						CAPACITANCEC, (pF)
	100									10,000					Ciss
	50
								1mS		5,000
	10														Coss
	5							10mS
	5
								100mS		1,000
	1							DC		500					Crss
	1		T =+25°C							500					Crss
			C
D			SINGLE PULSE
I			SINGLE PULSE
	.1	1		5 10		50	100	400		100.01			.1	1	10	50
		VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)								VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
	FIGURE 10, MAXIMUM SAFE OPERATING AREA								FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
(VOLTS)VOLTAGESOURCE-TO-GATE,	20		ID = ID [Cont.]						(AMPERES)CURRENTDRAINREVERSE	200
(VOLTS)VOLTAGESOURCE-TO-GATE,			ID = ID [Cont.]						(AMPERES)CURRENTDRAINREVERSE
					VDS=80V					100		TJ =+150°C		TJ =+25°C
	16				VDS=80V
	16			VDS=200V
				VDS=200V						50
	12						VDS=320V
	12
	8									10
	8
										5
	4
GS									DR
									,
V	0	0	100	200	300	400	500	600	I	1		0.4	0.8	1.2	1.6	2.0
		0	100	200	300	400	500	600		0		0.4	0.8	1.2	1.6	2.0
			Qg, TOTAL GATE CHARGE (nC)							V	SD	, SOURCE-TO-DRAIN VOLTAGE (VOLTS)

FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE

FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE

050-5543 Rev B

						TO-264 Package Outline
			4.60 (.181)
				5.21 (.205)								19.51 (.768)
			1.80 (.071)								20.50 (.807)
				2.01 (.079)
														3.10 (.122)
														3.48 (.137)


								5.79		(.228)
								6.20 (.244)

Drain
							25.48 (1.003)
							26.49 (1.043)
															2.29 (.090)






								2.29 (.090)							2.69 (.106)
								2.69 (.106)
								2.69 (.106)
							19.81 (.780)								Gate
							19.81 (.780)
							21.39 (.842)
															Drain
															Source
		0.48 (.019)						0.76 (.030)
				0.84 (.033)				1.30 (.051)
				0.84 (.033)				1.30 (.051)
	2.59 (.102)							2.79 (.110)
				3.00 (.118)				3.18 (.125)
				3.00 (.118)				3.18 (.125)

									5.45 (.215) BSC
									5.45 (.215) BSC

										2-Plcs.
					Dimensions in Millimeters and (Inches)


APT's devices are covered by one or more of the following U.S.patents: 4,895,810							5,045,903 5,089,434 5,182,234 5,019,522 5,262,336
5,256,583							4,748,103	5,283,202			5,231,474		5,434,095	5,528,058

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