СПП1 / СППП. РГЗ / Паспортные данные диодов / DSEP15-03A
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DSEP 15-03A
HiPerFREDTM Epitaxial Diode with soft recovery
VRSM |
VRRM |
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C |
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300 |
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300 |
DSEP 15-03A |
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Symbol |
Conditions |
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Maximum Ratings |
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IFRMS |
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35 |
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A |
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IFAVM |
TC = 135°C; rectangular, d = 0.5 |
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15 |
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A |
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IFSM |
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TVJ = 45°C; tp = 10 ms (50 Hz), sine |
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140 |
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A |
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EAS |
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TVJ = 25°C; non-repetitive |
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0.8 |
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mJ |
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IAS = 2.5 A; L = 180 µH |
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IAR |
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VA = 1.5·VR typ.; f = 10 kHz; repetitive |
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0.3 |
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A |
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TVJ |
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-55...+175 |
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°C |
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TVJM |
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175 |
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°C |
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Tstg |
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-55...+150 |
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°C |
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Ptot |
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TC = 25°C |
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95 |
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W |
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Md |
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mounting torque |
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0.4...0.6 |
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Nm |
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Weight |
typical |
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2 |
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g |
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Symbol |
Conditions |
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Characteristic Values |
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typ. |
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max. |
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IR |
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TVJ = 25°C |
VR |
= VRRM |
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100 |
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mA |
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TVJ = 150°C VR |
= VRRM |
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0.5 |
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mA |
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VF |
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IF = 15 A; |
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TVJ = 150°C |
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1.21 |
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V |
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TVJ = 25°C |
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1.68 |
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V |
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RthJC |
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1.6 |
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K/W |
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RthCH |
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0.5 |
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K/W |
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trr |
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IF = 1 A; -di/dt = 100 A/ms; |
30 |
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ns |
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VR = 30 V; TVJ = 25°C |
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IRM |
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VR = 100 V; |
IF = 25 A; -diF/dt = 100 A/ms |
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2.7 |
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A |
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TVJ = 100°C |
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Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
IFAV |
= 15 A |
VRRM = 300 V |
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trr |
= 30 ns |
TO-220 AC
C
(TAB)
A = Anode, C = Cathode, TAB = Cathode
Features
●International standard package
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency switching devices
●Antisaturation diode
●Snubber diode
●Free wheeling diode in converters and motor control circuits
●Rectifiers in switch mode power supplies (SMPS)
●Inductive heating
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●Avalanche voltage rated for reliable operation
●Soft reverse recovery for low EMI/RFI
●Low IRM reduces:
-Power dissipation within the diode
-Turn-on loss in the commutating switch
Dimensions see outlines.pdf
025
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DSEP 15-03A |
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40 |
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500 |
TVJ = 100°C |
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20 |
TVJ = 100°C |
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nC |
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A |
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VR = 150V |
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A |
VR |
= 150V |
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30 |
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400 |
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15 |
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IF = 30A |
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IF |
TVJ = 150°C |
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Qr |
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IRM |
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IF = 15A |
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IF = 30A |
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TVJ = 100°C |
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300 |
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IF = 7.5A |
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20 |
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IF = 15A |
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10 |
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TVJ = 25°C |
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IF = 7.5A |
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200 |
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10 |
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100 |
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5 |
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0 |
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V |
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0 |
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0 |
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0 |
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1 |
2 |
100 |
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A/ms 1000 |
0 |
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200 |
400 |
600 |
A/800ms |
1000 |
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VF |
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-diF/dt |
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-diF/dt |
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Fig. 1 Forward current IF versus VF |
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Fig. 2 |
Reverse recovery charge Qr |
Fig. 3 Peak reverse current IRM |
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versus -diF/dt |
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versus -diF/dt |
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1.4 |
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80 |
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TVJ = 100°C |
14 |
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TVJ |
= 100°C |
0.85 |
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ns |
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V |
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s |
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VR |
= 150V |
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IF |
= 15A |
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70 |
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12 |
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0.80 |
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1.2 |
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trr |
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VFR |
tfr |
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tfr |
Kf |
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IF = 30A |
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V |
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60 |
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10 |
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FR |
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0.75 |
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IF = 15A |
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1.0 |
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IRM |
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IF = 7.5A |
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50 |
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8 |
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0.70 |
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0.8 |
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Qr |
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40 |
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6 |
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0.65 |
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0.6 |
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30 |
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4 |
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A/800ms |
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0.60 |
0 |
40 |
80 |
120 °C 160 |
0 |
200 |
400 |
600 |
A/800ms 1000 |
0 |
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600 |
1000 |
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T |
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-di /dt |
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diF/dt |
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VJ |
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F |
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Fig. 4 Dynamic parameters Qr, IRM |
Fig. 5 Recovery time trr versus -diF/dt |
Fig. 6 Peak forward voltage VFR and tfr |
versus TVJ |
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versus diF/dt |
10 |
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K/W |
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1 |
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ZthJC |
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0.1 |
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0.01 |
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0.001 |
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DSEP 15-03A |
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s |
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0.00001 |
0.0001 |
0.001 |
0.01 |
0.1 |
1 |
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t |
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Constants for ZthJC calculation:
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Rthi (K/W) |
ti (s) |
1 |
0.908 |
0.005 |
2 |
0.35 |
0.0003 |
3 |
0.342 |
0.017 |
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Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
© 2000 IXYS All rights reserved
025
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