СПП1 / СППП. РГЗ / Паспортные данные диодов / ISL9R1560PF2
.pdf
April 2003
ISL9R1560PF2
15A, 600V Stealth™ Diode
General Description
The ISL9R1560PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse
recovery current (IRM(REC)) and exceptionally soft recovery under typical operating conditions.
This device is intended for use as a free wheeling or boost diode in power supplies and other power
switching applications. The low IRM(REC) and short ta phase reduce loss in switching transistors. The soft
recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost.
Formerly developmental type TA49410.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2
• Fast Recovery. . . . . . . . . . . . . . . . . . . . . . . trr < 30ns
• Operating Temperature. . . . . . . . . . . . . . . . . . 150oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Internally Isolated . . . . . . . . . . . . . . . . . . . . . . . . 1kV
• Avalanche Energy Rated
Applications
•Switch Mode Power Supplies
•Hard Switched PFC Boost Diode
•UPS Free Wheeling Diode
•Motor Drive FWD
•SMPS FWD
•Snubber Diode
Package |
Symbol |
TO-220F
K |
A |
CATHODE
ANODE
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol |
Parameter |
Ratings |
Units |
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VRRM |
Repetitive Peak Reverse Voltage |
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600 |
V |
VRWM |
Working Peak Reverse Voltage |
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600 |
V |
VR |
DC Blocking Voltage |
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600 |
V |
I |
Average Rectified Forward Current (T |
C |
= 25oC) |
15 |
A |
F(AV) |
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IFRM |
Repetitive Peak Surge Current (20kHz Square Wave) |
30 |
A |
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IFSM |
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) |
200 |
A |
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PD |
Power Dissipation |
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30 |
W |
EAVL |
Avalanche Energy (1A, 40mH) |
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20 |
mJ |
TJ, TSTG |
Operating and Storage Temperature Range |
-55 to 150 |
°C |
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TL |
Maximum Temperature for Soldering |
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Leads at 0.063in (1.6mm) from Case for 10s |
300 |
°C |
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CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
ISL9R1560PF2
©2003 Fairchild Semiconductor Corporation |
ISL9R1560PF2 Rev. A1 |
Package Marking and Ordering Information
Device Marking |
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Device |
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Package |
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Tape Width |
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Quantity |
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R1560PF2 |
ISL9R1560PF2 |
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TO-220F |
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N/A |
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50 |
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Electrical Characteristics TC = 25°C unless otherwise noted |
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Symbol |
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Parameter |
Test Conditions |
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Min |
Typ |
Max |
Units |
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Off State Characteristics |
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IR |
Instantaneous Reverse Current |
VR = 600V |
TC = 25°C |
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- |
- |
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100 |
A |
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TC = 125°C |
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- |
- |
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1.0 |
mA |
On State Characteristics |
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VF |
Instantaneous Forward Voltage |
IF = 15A |
TC = 25°C |
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- |
1.8 |
2.2 |
V |
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TC = 125°C |
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- |
1.65 |
2.0 |
V |
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Dynamic Characteristics |
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CJ |
Junction Capacitance |
VR = 10V, IF = 0A |
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- |
62 |
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pF |
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Switching Characteristics |
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trr |
Reverse Recovery Time |
IF = 1A, dIF/dt = 100A/ s, VR = 30V |
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- |
25 |
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30 |
ns |
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IF = 15A, dIF/dt = 100A/ s, VR = 30V |
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- |
35 |
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40 |
ns |
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trr |
Reverse Recovery Time |
IF = 15A, |
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- |
29.4 |
- |
ns |
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I |
Maximum Reverse Recovery Current |
dIF/dt = 200A/ s, |
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- |
3.5 |
- |
A |
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RM(REC) |
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VR = 390V, TC = 25°C |
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QRR |
Reverse Recovered Charge |
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- |
57 |
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nC |
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trr |
Reverse Recovery Time |
IF = 15A, |
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- |
90 |
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- |
ns |
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S |
Softness Factor (t |
/t |
) |
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dIF/dt = 200A/ s, |
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- |
2.0 |
- |
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b |
a |
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VR = 390V, |
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IRM(REC) |
Maximum Reverse Recovery Current |
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- |
5.0 |
- |
A |
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TC = 125°C |
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QRR |
Reverse Recovered Charge |
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- |
275 |
- |
nC |
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trr |
Reverse Recovery Time |
IF = 15A, |
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- |
52 |
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- |
ns |
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S |
Softness Factor (t |
/t |
) |
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dIF/dt = 800A/ s, |
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- |
1.36 |
- |
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b |
a |
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VR = 390V, |
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IRM(REC) |
Maximum Reverse Recovery Current |
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- |
13.5 |
- |
A |
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TC = 125°C |
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QRR |
Reverse Recovered Charge |
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- |
390 |
- |
nC |
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dIM/dt |
Maximum di/dt during tb |
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- |
800 |
- |
A/µs |
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Thermal Characteristics |
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Rθ JC |
Thermal Resistance Junction to Case |
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- |
- |
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4.1 |
°C/W |
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Rθ JA |
Thermal Resistance Junction to Ambient |
TO-247 |
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- |
- |
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70 |
°C/W |
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ISL9R1560PF2
©2003 Fairchild Semiconductor Corporation |
ISL9R1560PF2 Rev. A1 |
Typical Performance Curves
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30 |
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25 |
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(A) |
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175oC |
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CURRENT |
20 |
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150oC |
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125oC |
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25oC |
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15 |
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, FORWARD |
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100oC |
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10 |
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F |
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I |
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5 |
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0 |
0.75 |
1.0 |
1.25 |
1.5 |
1.75 |
2.0 |
2.25 |
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0.5 |
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VF, FORWARD VOLTAGE (V) |
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Figure 1. Forward Current vs Forward Voltage
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100 |
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VR = 390V, TJ = 125°C |
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80 |
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs |
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(ns) |
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TIMES |
60 |
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t, RECOVERY |
40 |
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20 |
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ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs |
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0 |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
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IF, FORWARD CURRENT (A) |
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Figure 3. ta and tb Curves vs Forward Current |
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(A) |
16 |
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CURRENT |
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dIF/dt = 800A/µs |
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VR = 390V, TJ = 125°C |
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14 |
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RECOVERY |
12 |
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dIF/dt = 500A/µs |
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10 |
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REVERSE |
8 |
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6 |
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dIF/dt = 200A/µs |
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, MAX |
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RM(REC) |
4 |
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2 |
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I |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
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IF, FORWARD CURRENT (A) |
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Figure 5. Maximum Reverse Recovery Current vs Forward Current
A)(CURRENT |
4000 |
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175oC |
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ISL9R1560PF2 |
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1000 |
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150oC |
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100 |
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125oC |
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REVERSE, |
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100oC |
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10 |
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75oC |
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R |
1 |
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I |
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25oC |
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0.1 |
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100 |
200 |
300 |
400 |
500 |
600 |
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VR , REVERSE VOLTAGE (V) |
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Figure 2. Reverse Current vs Reverse Voltage
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100 |
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VR = 390V, TJ = 125°C |
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80 |
tb AT IF = 30A, 15A, 7.5A |
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(ns) |
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TIMES |
60 |
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t, RECOVERY |
40 |
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20 |
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ta AT IF = 30A, 15A, 7.5A |
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0 |
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200 |
400 |
600 |
800 |
1000 |
1200 |
1400 |
1600 |
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dIF/dt, CURRENT RATE OF CHANGE (A/ s) |
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Figure 4. ta and tb Curves vs dIF/dt |
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(A) |
25 |
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CURRENT |
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VR = 390V, TJ = 125°C |
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IF = 30A |
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20 |
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RECOVERY |
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IF = 15A |
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15 |
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IF = 7.5A |
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, MAX REVERSE |
10 |
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5 |
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RM(REC) |
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I |
0 |
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200 |
400 |
600 |
800 |
1000 |
1200 |
1400 |
1600 |
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dIF/dt, CURRENT RATE OF CHANGE (A/ s) |
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Figure 6. Maximum Reverse Recovery Current vs dIF/dt
©2003 Fairchild Semiconductor Corporation |
ISL9R1560PF2 Rev. A1 |
Typical Performance Curves (Continued)
FACTOR |
2.5 |
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VR = 390V, TJ = 125°C |
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IF = 30A |
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SOFTNESS |
2.0 |
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IF = 15A |
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RECOVERY |
1.5 |
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IF = 7.5A |
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S, REVERSE |
1.0 |
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0.5 |
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200 |
400 |
600 |
800 |
1000 |
1200 |
1400 |
1600 |
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dIF /dt, CURRENT RATE OF CHANGE (A/ s) |
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Figure 7. Reverse Recovery Softness Factor vs dIF/dt
(nC) |
700 |
VR = 390V, TJ = 125°C |
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IF = 30A |
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CHARGE |
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600 |
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RECOVERED |
500 |
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IF = 15A |
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400 |
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REVERSE |
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300 |
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IF = 7.5A |
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, |
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RR |
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Q |
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200 |
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200 |
400 |
600 |
800 |
1000 |
1200 |
1400 |
1600 |
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dIF/dt, CURRENT RATE OF CHANGE (A/ s) |
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Figure 8. Reverse Recovered Charge vs dIF/dt
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1200 |
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(pF) |
1000 |
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CAPACITANCE |
800 |
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600 |
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, JUNCTION |
400 |
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200 |
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J |
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C |
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0 |
1 |
10 |
100 |
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0.1 |
VR , REVERSE VOLTAGE (V)
(A) |
16 |
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14 |
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CURRENT |
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12 |
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10 |
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FORWARD |
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8 |
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6 |
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, AVERAGE |
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4 |
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2 |
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F(AV) |
0 |
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I |
25 |
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50 |
75 |
100 |
125 |
150 |
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0 |
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T |
C |
, CASE TEMPERATURE (oC) |
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Figure 9. Junction Capacitance vs Reverse |
Figure 10. DC Current Derating Curve |
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Voltage |
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2.0 |
DUTY CYCLE - DESCENDING ORDER |
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1.0 |
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0.5 |
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0.2 |
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0.1 |
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IMPEDANCE |
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0.05 |
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NORMALIZED |
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0.02 |
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0.1 |
0.01 |
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PDM |
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t1 |
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θ JA, |
THERMAL |
0.01 |
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t2 |
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Z |
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NOTES: |
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SINGLE PULSE |
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DUTY FACTOR: D = t1/t2 |
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PEAK TJ = PDM x Zθ JA x Rθ JA + TA |
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0.001 |
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10-5 |
10-4 |
10-3 |
10-2 |
10-1 |
100 |
101 |
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
ISL9R1560PF2
©2003 Fairchild Semiconductor Corporation |
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TypicalestCircuitPerformanceand WavefoCurmsves (Continued) |
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Figure 12. trr Test Circuit |
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Figure 13. trr Waveforms and Definitions |
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Figure 14. Avalanche Energy Test Circuit |
Figure 15. Avalanche Current and Voltage |
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©2003 Fairchild Semiconductor Corporation |
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ISL9R1560PF2 Rev. A1 |
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ |
FACT™ |
ImpliedDisconnect™ PACMAN™ |
SPM™ |
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ActiveArray™ |
FACT Quiet Series™ |
ISOPLANAR™ |
POP™ |
Stealth™ |
Bottomless™ |
FASTâ |
LittleFET™ |
Power247™ |
SuperSOT™-3 |
CoolFET™ |
FASTr™ |
MicroFET™ |
PowerTrenchâ |
SuperSOT™-6 |
CROSSVOLT™ |
FRFET™ |
MicroPak™ |
QFET™ |
SuperSOT™-8 |
DOME™ |
GlobalOptoisolator™ |
MICROWIRE™ |
QS™ |
SyncFET™ |
EcoSPARK™ |
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E2CMOSTM |
HiSeC™ |
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Quiet Series™ |
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I2C™ |
OCX™ |
RapidConfigure™ |
UHC™ |
Across the board. Around the world.™ |
OCXPro™ |
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UltraFETâ |
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The Power Franchise™ |
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOTASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification |
Product Status |
Definition |
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Advance Information |
Formative or |
This datasheet contains the design specifications for |
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In Design |
product development. Specifications may change in |
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No Identification Needed |
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Semiconductor reserves the right to make changes at |
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The datasheet is printed for reference information only. |
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Rev. I2