СПП1 / СППП. РГЗ / Паспортные данные диодов / FES16FT
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FES16AT - FES16JT
Features
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Low forward voltage drop. |
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PIN 1 |
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CASE |
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High surge current capacity. |
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Case Positive |
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High current capability. |
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PIN 1 |
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High reliability. |
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PIN 3 |
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Case Negative |
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TO-220AC |
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Suffix "R" |
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Fast Rectifiers (Glass Passivated) |
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Absolute Maximum Ratings* |
TA = 25°C unless otherwise noted |
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16AT |
16BT |
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16CT |
16DT |
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16FT |
16GT |
16HT |
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16JT |
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VRRM |
Maximum Repetitive Reverse |
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100 |
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150 |
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300 |
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600 |
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Voltage |
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IF(AV) |
Average Rectified Forward Current, |
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16 |
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A |
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.375 " lead length @ TA = 100° C |
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IFSM |
Non-repetitive Peak Forward Surge |
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250 |
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A |
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Current |
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8.3 ms Single Half-Sine-Wave |
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Tstg |
Storage Temperature Range |
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-65 to +150 |
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TJ |
Operating Junction Temperature |
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-65 to +150 |
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pF |
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*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
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Value |
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Units |
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PD |
Power Dissipation |
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7.81 |
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W |
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Rθ JA |
Thermal Resistance, Junction to Ambient |
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16 |
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° C/W |
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Rθ JL |
Thermal Resistance, Junction to Lead |
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1.2 |
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° C/W |
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Electrical Characteristics TA = 25°C unless otherwise noted |
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Symbol |
Parameter |
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Device |
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Units |
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16AT |
16BT |
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16CT |
16DT |
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16FT |
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16GT |
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16HT |
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16JT |
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VF |
Forward Voltage @ 8.0A |
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0.95 |
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1.3 |
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1.5 |
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V |
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trr |
Reverse Recovery Time |
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35 |
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50 |
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ns |
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IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A |
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IR |
Reverse Current @ rated VR |
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10 |
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A |
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TA = 25° C |
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TA = 100° C |
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500 |
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A |
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CT |
Total Capacitance |
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170 |
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145 |
pF |
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VR = 4.0. f = 1.0 MHz |
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FES16JT - TFES16A
2001 Fairchild Semiconductor Corporation |
FES16AT - FES16JT, Rev. C |
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Typical Characteristics |
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FES16AT |
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[A] 20 |
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[A] |
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250 |
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F |
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16 |
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FSM |
200 |
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FES16JT- |
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12 |
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150 |
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AverageRectified ForwardCurrent,I |
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SINGLE PHASE |
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Peak Forward SurgeCurrent,I |
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HALF WAVE |
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100 |
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60HZ |
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RESISTIVE OR |
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4 |
INDUCTIVE LOAD |
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50 |
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.375" (9.0mm) LEAD |
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LENGTHS |
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0 0 |
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25 |
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75 |
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125 |
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0 1 |
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10 |
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Ambient Temperature [ºC] |
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Number of Cycles at 60Hz |
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Figure 1. Forward Current Derating Curve |
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Figure 2. Non-Repetitive Surge Current |
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100 |
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1000 |
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[A] |
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FES16AT-FES16DT |
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10 |
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[mA] |
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100 |
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I |
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FES16FT-FES16JT |
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TA = 100ºC |
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ForwardCurrent, |
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R |
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1 |
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Reverse Current, I |
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10 |
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TA = 25ºC |
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0.1 |
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TA = 25ºC |
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Pulse Width = 300 s |
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0.010.4 |
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2% Duty Cycle |
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0.1 0 |
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0.6 |
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1.2 |
1.4 |
1.6 |
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Forward Voltage, VF [V] |
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Percent of Rated Peak Reverse Voltage [%] |
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Figure 3. Forward Voltage Characteristics |
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Figure 4. Reverse Current vs Reverse Voltage |
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300 |
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[pF] |
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C |
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Capacitance, |
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150 |
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FES16AT-FES16DT |
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FES16FT-FES16JT |
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Total |
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0 1 |
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100 |
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Reverse Voltage, VR [V] |
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Figure 5. Total Capacitance |
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50Ω |
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50Ω |
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trr |
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NONINDUCTIVE |
NONINDUCTIVE |
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+0.5A |
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DUT |
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(-) |
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Pulse |
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50V |
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Generator |
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-0.25A |
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(approx) |
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(Note 2) |
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50Ω |
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OSCILLOSCOPE |
(+) |
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NONINDUCTIVE |
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(Note 1) |
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-1.0A |
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1.0cm |
SET TIME BASE FOR |
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5/ 10 ns/ cm |
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Reverse Recovery Time Characterstic and Test Circuit Diagram |
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2001 Fairchild Semiconductor Corporation |
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FES16AT - FES16JT, Rev. C |
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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx™ |
FAST â |
OPTOLOGIC™ |
SMART START™ VCX™ |
Bottomless™ |
FASTr™ |
OPTOPLANAR™ |
STAR*POWER™ |
CoolFET™ |
FRFET™ |
PACMAN™ |
Stealth™ |
CROSSVOLT™ |
GlobalOptoisolator™ |
POP™ |
SuperSOT™-3 |
DenseTrench™ |
GTO™ |
Power247™ |
SuperSOT™-6 |
DOME™ |
HiSeC™ |
PowerTrenchâ |
SuperSOT™-8 |
EcoSPARK™ |
ISOPLANAR™ |
QFET™ |
SyncFET™ |
E2CMOSTM |
LittleFET™ |
QS™ |
TinyLogic™ |
EnSignaTM |
MicroFET™ |
QT Optoelectronics™ |
TruTranslation™ |
FACT™ |
MicroPak™ |
Quiet Series™ |
UHC™ |
FACT Quiet Series™ |
MICROWIRE™ |
SILENT SWITCHERâ |
UltraFETâ |
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:
1. Life support devices or systems are devices or |
2. A critical component is any component of a life |
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systems which, (a) are intended for surgical implant into |
support device or system whose failure to perform can |
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the body, or (b) support or sustain life, or (c) whose |
be reasonably expected to cause the failure of the life |
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failure to perform when properly used in accordance |
support device or system, or to affect its safety or |
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with instructions for use provided in the labeling, can be |
effectiveness. |
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reasonably expected to result in significant injury to the |
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user. |
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PRODUCT STATUS DEFINITIONS |
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Definition of Terms |
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Datasheet Identification |
Product Status |
Definition |
Advance Information |
Formative or |
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In Design |
Preliminary |
First Production |
No Identification Needed |
Full Production |
Obsolete |
Not In Production |
This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.
This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4