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Файл:dsd1-10 / dsd-01=Компоненты ИС / JOB / mos1 / mos1load
.c/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
#include "spice.h"
#include <stdio.h>
#include "cktdefs.h"
#include "devdefs.h"
#include "mos1defs.h"
#include "util.h"
#include "trandefs.h"
#include "const.h"
#include "sperror.h"
#include "suffix.h"
int
MOS1load(inModel,ckt)
GENmodel *inModel;
register CKTcircuit *ckt;
/* actually load the current value into the
* sparse matrix previously provided
*/
{
register MOS1model *model = (MOS1model *) inModel;
register MOS1instance *here;
double Beta;
double DrainSatCur;
double EffectiveLength;
double GateBulkOverlapCap;
double GateDrainOverlapCap;
double GateSourceOverlapCap;
double OxideCap;
double SourceSatCur;
double arg;
double cbhat;
double cdhat;
double cdrain;
double cdreq;
double ceq;
double ceqbd;
double ceqbs;
double ceqgb;
double ceqgd;
double ceqgs;
double delvbd;
double delvbs;
double delvds;
double delvgd;
double delvgs;
double evbd;
double evbs;
double gcgb;
double gcgd;
double gcgs;
double geq;
double sarg;
double sargsw;
double tol;
double vbd;
double vbs;
double vds;
double vdsat;
double vgb1;
double vgb;
double vgd1;
double vgd;
double vgdo;
double vgs1;
double vgs;
double von;
double vt;
double xfact;
int xnrm;
int xrev;
double capgs; /* total gate-source capacitance */
double capgd; /* total gate-drain capacitance */
double capgb; /* total gate-bulk capacitance */
int Check;
#ifndef NOBYPASS
double tempv;
#endif /*NOBYPASS*/
int error;
#ifdef CAPBYPASS
int senflag;
#endif /* CAPBYPASS */
int SenCond;
#ifdef CAPBYPASS
senflag = 0;
if(ckt->CKTsenInfo && ckt->CKTsenInfo->SENstatus == PERTURBATION &&
(ckt->CKTsenInfo->SENmode & (ACSEN | TRANSEN))) {
senflag = 1;
}
#endif /* CAPBYPASS */
/* loop through all the MOS1 device models */
for( ; model != NULL; model = model->MOS1nextModel ) {
/* loop through all the instances of the model */
for (here = model->MOS1instances; here != NULL ;
here=here->MOS1nextInstance) {
if (here->MOS1owner != ARCHme) continue;
vt = CONSTKoverQ * here->MOS1temp;
Check=1;
if(ckt->CKTsenInfo){
#ifdef SENSDEBUG
printf("MOS1load \n");
#endif /* SENSDEBUG */
if((ckt->CKTsenInfo->SENstatus == PERTURBATION)&&
(here->MOS1senPertFlag == OFF))continue;
}
SenCond = ckt->CKTsenInfo && here->MOS1senPertFlag;
/*
*/
#ifdef DETAILPROF
asm(" .globl mospta");
asm("mospta:");
#endif /*DETAILPROF*/
/* first, we compute a few useful values - these could be
* pre-computed, but for historical reasons are still done
* here. They may be moved at the expense of instance size
*/
EffectiveLength=here->MOS1l - 2*model->MOS1latDiff;
if( (here->MOS1tSatCurDens == 0) ||
(here->MOS1drainArea == 0) ||
(here->MOS1sourceArea == 0)) {
DrainSatCur = here->MOS1tSatCur;
SourceSatCur = here->MOS1tSatCur;
} else {
DrainSatCur = here->MOS1tSatCurDens *
here->MOS1drainArea;
SourceSatCur = here->MOS1tSatCurDens *
here->MOS1sourceArea;
}
GateSourceOverlapCap = model->MOS1gateSourceOverlapCapFactor *
here->MOS1w;
GateDrainOverlapCap = model->MOS1gateDrainOverlapCapFactor *
here->MOS1w;
GateBulkOverlapCap = model->MOS1gateBulkOverlapCapFactor *
EffectiveLength;
Beta = here->MOS1tTransconductance * here->MOS1w/EffectiveLength;
OxideCap = model->MOS1oxideCapFactor * EffectiveLength *
here->MOS1w;
/*
* ok - now to do the start-up operations
*
* we must get values for vbs, vds, and vgs from somewhere
* so we either predict them or recover them from last iteration
* These are the two most common cases - either a prediction
* step or the general iteration step and they
* share some code, so we put them first - others later on
*/
if(SenCond){
#ifdef SENSDEBUG
printf("MOS1senPertFlag = ON \n");
#endif /* SENSDEBUG */
if((ckt->CKTsenInfo->SENmode == TRANSEN) &&
(ckt->CKTmode & MODEINITTRAN)) {
vgs = *(ckt->CKTstate1 + here->MOS1vgs);
vds = *(ckt->CKTstate1 + here->MOS1vds);
vbs = *(ckt->CKTstate1 + here->MOS1vbs);
vbd = *(ckt->CKTstate1 + here->MOS1vbd);
vgb = vgs - vbs;
vgd = vgs - vds;
}
else if (ckt->CKTsenInfo->SENmode == ACSEN){
vgb = model->MOS1type * (
*(ckt->CKTrhsOp+here->MOS1gNode) -
*(ckt->CKTrhsOp+here->MOS1bNode));
vbs = *(ckt->CKTstate0 + here->MOS1vbs);
vbd = *(ckt->CKTstate0 + here->MOS1vbd);
vgd = vgb + vbd ;
vgs = vgb + vbs ;
vds = vbs - vbd ;
}
else{
vgs = *(ckt->CKTstate0 + here->MOS1vgs);
vds = *(ckt->CKTstate0 + here->MOS1vds);
vbs = *(ckt->CKTstate0 + here->MOS1vbs);
vbd = *(ckt->CKTstate0 + here->MOS1vbd);
vgb = vgs - vbs;
vgd = vgs - vds;
}
#ifdef SENSDEBUG
printf(" vbs = %.7e ,vbd = %.7e,vgb = %.7e\n",vbs,vbd,vgb);
printf(" vgs = %.7e ,vds = %.7e,vgd = %.7e\n",vgs,vds,vgd);
#endif /* SENSDEBUG */
goto next1;
}
if((ckt->CKTmode & (MODEINITFLOAT | MODEINITPRED | MODEINITSMSIG
| MODEINITTRAN)) ||
( (ckt->CKTmode & MODEINITFIX) && (!here->MOS1off) ) ) {
#ifndef PREDICTOR
if(ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) {
/* predictor step */
xfact=ckt->CKTdelta/ckt->CKTdeltaOld[1];
*(ckt->CKTstate0 + here->MOS1vbs) =
*(ckt->CKTstate1 + here->MOS1vbs);
vbs = (1+xfact)* (*(ckt->CKTstate1 + here->MOS1vbs))
-(xfact * (*(ckt->CKTstate2 + here->MOS1vbs)));
*(ckt->CKTstate0 + here->MOS1vgs) =
*(ckt->CKTstate1 + here->MOS1vgs);
vgs = (1+xfact)* (*(ckt->CKTstate1 + here->MOS1vgs))
-(xfact * (*(ckt->CKTstate2 + here->MOS1vgs)));
*(ckt->CKTstate0 + here->MOS1vds) =
*(ckt->CKTstate1 + here->MOS1vds);
vds = (1+xfact)* (*(ckt->CKTstate1 + here->MOS1vds))
-(xfact * (*(ckt->CKTstate2 + here->MOS1vds)));
*(ckt->CKTstate0 + here->MOS1vbd) =
*(ckt->CKTstate0 + here->MOS1vbs)-
*(ckt->CKTstate0 + here->MOS1vds);
} else {
#endif /* PREDICTOR */
/* general iteration */
vbs = model->MOS1type * (
*(ckt->CKTrhsOld+here->MOS1bNode) -
*(ckt->CKTrhsOld+here->MOS1sNodePrime));
vgs = model->MOS1type * (
*(ckt->CKTrhsOld+here->MOS1gNode) -
*(ckt->CKTrhsOld+here->MOS1sNodePrime));
vds = model->MOS1type * (
*(ckt->CKTrhsOld+here->MOS1dNodePrime) -
*(ckt->CKTrhsOld+here->MOS1sNodePrime));
#ifndef PREDICTOR
}
#endif /* PREDICTOR */
/* now some common crunching for some more useful quantities */
vbd=vbs-vds;
vgd=vgs-vds;
vgdo = *(ckt->CKTstate0 + here->MOS1vgs) -
*(ckt->CKTstate0 + here->MOS1vds);
delvbs = vbs - *(ckt->CKTstate0 + here->MOS1vbs);
delvbd = vbd - *(ckt->CKTstate0 + here->MOS1vbd);
delvgs = vgs - *(ckt->CKTstate0 + here->MOS1vgs);
delvds = vds - *(ckt->CKTstate0 + here->MOS1vds);
delvgd = vgd-vgdo;
/* these are needed for convergence testing */
if (here->MOS1mode >= 0) {
cdhat=
here->MOS1cd-
here->MOS1gbd * delvbd +
here->MOS1gmbs * delvbs +
here->MOS1gm * delvgs +
here->MOS1gds * delvds ;
} else {
cdhat=
here->MOS1cd -
( here->MOS1gbd -
here->MOS1gmbs) * delvbd -
here->MOS1gm * delvgd +
here->MOS1gds * delvds ;
}
cbhat=
here->MOS1cbs +
here->MOS1cbd +
here->MOS1gbd * delvbd +
here->MOS1gbs * delvbs ;
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptb");
asm("mosptb:");
#endif /*DETAILPROF*/
#ifndef NOBYPASS
/* now lets see if we can bypass (ugh) */
/* the following mess should be one if statement, but
* many compilers can't handle it all at once, so it
* is split into several successive if statements
*/
tempv = MAX(FABS(cbhat),FABS(here->MOS1cbs
+ here->MOS1cbd))+ckt->CKTabstol;
if((!(ckt->CKTmode & (MODEINITPRED|MODEINITTRAN|MODEINITSMSIG)
)) && (ckt->CKTbypass) )
if ( (FABS(cbhat-(here->MOS1cbs +
here->MOS1cbd)) < ckt->CKTreltol *
tempv))
if( (FABS(delvbs) < (ckt->CKTreltol * MAX(FABS(vbs),
FABS(*(ckt->CKTstate0+here->MOS1vbs)))+
ckt->CKTvoltTol)))
if ( (FABS(delvbd) < (ckt->CKTreltol * MAX(FABS(vbd),
FABS(*(ckt->CKTstate0+here->MOS1vbd)))+
ckt->CKTvoltTol)) )
if( (FABS(delvgs) < (ckt->CKTreltol * MAX(FABS(vgs),
FABS(*(ckt->CKTstate0+here->MOS1vgs)))+
ckt->CKTvoltTol)))
if ( (FABS(delvds) < (ckt->CKTreltol * MAX(FABS(vds),
FABS(*(ckt->CKTstate0+here->MOS1vds)))+
ckt->CKTvoltTol)) )
if( (FABS(cdhat- here->MOS1cd) <
ckt->CKTreltol * MAX(FABS(cdhat),FABS(
here->MOS1cd)) + ckt->CKTabstol) ) {
/* bypass code *
/* nothing interesting has changed since last
* iteration on this device, so we just
* copy all the values computed last iteration out
* and keep going
*/
vbs = *(ckt->CKTstate0 + here->MOS1vbs);
vbd = *(ckt->CKTstate0 + here->MOS1vbd);
vgs = *(ckt->CKTstate0 + here->MOS1vgs);
vds = *(ckt->CKTstate0 + here->MOS1vds);
vgd = vgs - vds;
vgb = vgs - vbs;
cdrain = here->MOS1mode * (here->MOS1cd + here->MOS1cbd);
if(ckt->CKTmode & (MODETRAN | MODETRANOP)) {
capgs = ( *(ckt->CKTstate0+here->MOS1capgs)+
*(ckt->CKTstate1+here->MOS1capgs) +
GateSourceOverlapCap );
capgd = ( *(ckt->CKTstate0+here->MOS1capgd)+
*(ckt->CKTstate1+here->MOS1capgd) +
GateDrainOverlapCap );
capgb = ( *(ckt->CKTstate0+here->MOS1capgb)+
*(ckt->CKTstate1+here->MOS1capgb) +
GateBulkOverlapCap );
if(ckt->CKTsenInfo){
here->MOS1cgs = capgs;
here->MOS1cgd = capgd;
here->MOS1cgb = capgb;
}
}
goto bypass;
}
#endif /*NOBYPASS*/
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptc");
asm("mosptc:");
#endif /*DETAILPROF*/
/* ok - bypass is out, do it the hard way */
von = model->MOS1type * here->MOS1von;
#ifndef NODELIMITING
/*
* limiting
* we want to keep device voltages from changing
* so fast that the exponentials churn out overflows
* and similar rudeness
*/
if(*(ckt->CKTstate0 + here->MOS1vds) >=0) {
vgs = DEVfetlim(vgs,*(ckt->CKTstate0 + here->MOS1vgs)
,von);
vds = vgs - vgd;
vds = DEVlimvds(vds,*(ckt->CKTstate0 + here->MOS1vds));
vgd = vgs - vds;
} else {
vgd = DEVfetlim(vgd,vgdo,von);
vds = vgs - vgd;
if(!(ckt->CKTfixLimit)) {
vds = -DEVlimvds(-vds,-(*(ckt->CKTstate0 +
here->MOS1vds)));
}
vgs = vgd + vds;
}
if(vds >= 0) {
vbs = DEVpnjlim(vbs,*(ckt->CKTstate0 + here->MOS1vbs),
vt,here->MOS1sourceVcrit,&Check);
vbd = vbs-vds;
} else {
vbd = DEVpnjlim(vbd,*(ckt->CKTstate0 + here->MOS1vbd),
vt,here->MOS1drainVcrit,&Check);
vbs = vbd + vds;
}
#endif /*NODELIMITING*/
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptd");
asm("mosptd:");
#endif /*DETAILPROF*/
} else {
/* ok - not one of the simple cases, so we have to
* look at all of the possibilities for why we were
* called. We still just initialize the three voltages
*/
if((ckt->CKTmode & MODEINITJCT) && !here->MOS1off) {
vds= model->MOS1type * here->MOS1icVDS;
vgs= model->MOS1type * here->MOS1icVGS;
vbs= model->MOS1type * here->MOS1icVBS;
if((vds==0) && (vgs==0) && (vbs==0) &&
((ckt->CKTmode &
(MODETRAN|MODEDCOP|MODEDCTRANCURVE)) ||
(!(ckt->CKTmode & MODEUIC)))) {
vbs = -1;
vgs = model->MOS1type * here->MOS1tVto;
vds = 0;
}
} else {
vbs=vgs=vds=0;
}
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mospte");
asm("mospte:");
#endif /*DETAILPROF*/
/*
* now all the preliminaries are over - we can start doing the
* real work
*/
vbd = vbs - vds;
vgd = vgs - vds;
vgb = vgs - vbs;
/*
* bulk-source and bulk-drain diodes
* here we just evaluate the ideal diode current and the
* corresponding derivative (conductance).
*/
next1: if(vbs <= 0) {
here->MOS1gbs = SourceSatCur/vt;
here->MOS1cbs = here->MOS1gbs*vbs;
here->MOS1gbs += ckt->CKTgmin;
} else {
evbs = exp(MIN(MAX_EXP_ARG,vbs/vt));
here->MOS1gbs = SourceSatCur*evbs/vt + ckt->CKTgmin;
here->MOS1cbs = SourceSatCur * (evbs-1);
}
if(vbd <= 0) {
here->MOS1gbd = DrainSatCur/vt;
here->MOS1cbd = here->MOS1gbd *vbd;
here->MOS1gbd += ckt->CKTgmin;
} else {
evbd = exp(MIN(MAX_EXP_ARG,vbd/vt));
here->MOS1gbd = DrainSatCur*evbd/vt +ckt->CKTgmin;
here->MOS1cbd = DrainSatCur *(evbd-1);
}
/* now to determine whether the user was able to correctly
* identify the source and drain of his device
*/
if(vds >= 0) {
/* normal mode */
here->MOS1mode = 1;
} else {
/* inverse mode */
here->MOS1mode = -1;
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptf");
asm("mosptf:");
#endif /*DETAILPROF*/
{
/*
* this block of code evaluates the drain current and its
* derivatives using the shichman-hodges model and the
* charges associated with the gate, channel and bulk for
* mosfets
*
*/
/* the following 4 variables are local to this code block until
* it is obvious that they can be made global
*/
double arg;
double betap;
double sarg;
double vgst;
if ((here->MOS1mode==1?vbs:vbd) <= 0 ) {
sarg=sqrt(here->MOS1tPhi-(here->MOS1mode==1?vbs:vbd));
} else {
sarg=sqrt(here->MOS1tPhi);
sarg=sarg-(here->MOS1mode==1?vbs:vbd)/(sarg+sarg);
sarg=MAX(0,sarg);
}
von=(here->MOS1tVbi*model->MOS1type)+model->MOS1gamma*sarg;
vgst=(here->MOS1mode==1?vgs:vgd)-von;
vdsat=MAX(vgst,0);
if (sarg <= 0) {
arg=0;
} else {
arg=model->MOS1gamma/(sarg+sarg);
}
if (vgst <= 0) {
/*
* cutoff region
*/
cdrain=0;
here->MOS1gm=0;
here->MOS1gds=0;
here->MOS1gmbs=0;
} else{
/*
* saturation region
*/
betap=Beta*(1+model->MOS1lambda*(vds*here->MOS1mode));
if (vgst <= (vds*here->MOS1mode)){
cdrain=betap*vgst*vgst*.5;
here->MOS1gm=betap*vgst;
here->MOS1gds=model->MOS1lambda*Beta*vgst*vgst*.5;
here->MOS1gmbs=here->MOS1gm*arg;
} else {
/*
* linear region
*/
cdrain=betap*(vds*here->MOS1mode)*
(vgst-.5*(vds*here->MOS1mode));
here->MOS1gm=betap*(vds*here->MOS1mode);
here->MOS1gds=betap*(vgst-(vds*here->MOS1mode))+
model->MOS1lambda*Beta*
(vds*here->MOS1mode)*
(vgst-.5*(vds*here->MOS1mode));
here->MOS1gmbs=here->MOS1gm*arg;
}
}
/*
* finished
*/
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptg");
asm("mosptg:");
#endif /*DETAILPROF*/
/* now deal with n vs p polarity */
here->MOS1von = model->MOS1type * von;
here->MOS1vdsat = model->MOS1type * vdsat;
/* line 490 */
/*
* COMPUTE EQUIVALENT DRAIN CURRENT SOURCE
*/
here->MOS1cd=here->MOS1mode * cdrain - here->MOS1cbd;
if (ckt->CKTmode & (MODETRAN | MODETRANOP | MODEINITSMSIG)) {
/*
* now we do the hard part of the bulk-drain and bulk-source
* diode - we evaluate the non-linear capacitance and
* charge
*
* the basic equations are not hard, but the implementation
* is somewhat long in an attempt to avoid log/exponential
* evaluations
*/
/*
* charge storage elements
*
*.. bulk-drain and bulk-source depletion capacitances
*/
#ifdef CAPBYPASS
if(((ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) ||
FABS(delvbs) >= ckt->CKTreltol * MAX(FABS(vbs),
FABS(*(ckt->CKTstate0+here->MOS1vbs)))+
ckt->CKTvoltTol)|| senflag)
#endif /*CAPBYPASS*/
{
/* can't bypass the diode capacitance calculations */
#ifdef CAPZEROBYPASS
if(here->MOS1Cbs != 0 || here->MOS1Cbssw != 0 ) {
#endif /*CAPZEROBYPASS*/
if (vbs < here->MOS1tDepCap){
arg=1-vbs/here->MOS1tBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
#ifndef NOSQRT
if(model->MOS1bulkJctBotGradingCoeff ==
model->MOS1bulkJctSideGradingCoeff) {
if(model->MOS1bulkJctBotGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
sarg = sargsw =
exp(-model->MOS1bulkJctBotGradingCoeff*
log(arg));
}
} else {
if(model->MOS1bulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sarg = exp(-model->MOS1bulkJctBotGradingCoeff*
log(arg));
#ifndef NOSQRT
}
if(model->MOS1bulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sargsw =exp(-model->MOS1bulkJctSideGradingCoeff*
log(arg));
#ifndef NOSQRT
}
}
#endif /*NOSQRT*/
*(ckt->CKTstate0 + here->MOS1qbs) =
here->MOS1tBulkPot*(here->MOS1Cbs*
(1-arg*sarg)/(1-model->MOS1bulkJctBotGradingCoeff)
+here->MOS1Cbssw*
(1-arg*sargsw)/
(1-model->MOS1bulkJctSideGradingCoeff));
here->MOS1capbs=here->MOS1Cbs*sarg+
here->MOS1Cbssw*sargsw;
} else {
*(ckt->CKTstate0 + here->MOS1qbs) = here->MOS1f4s +
vbs*(here->MOS1f2s+vbs*(here->MOS1f3s/2));
here->MOS1capbs=here->MOS1f2s+here->MOS1f3s*vbs;
}
#ifdef CAPZEROBYPASS
} else {
*(ckt->CKTstate0 + here->MOS1qbs) = 0;
here->MOS1capbs=0;
}
#endif /*CAPZEROBYPASS*/
}
#ifdef CAPBYPASS
if(((ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) ||
FABS(delvbd) >= ckt->CKTreltol * MAX(FABS(vbd),
FABS(*(ckt->CKTstate0+here->MOS1vbd)))+
ckt->CKTvoltTol)|| senflag)
#endif /*CAPBYPASS*/
/* can't bypass the diode capacitance calculations */
{
#ifdef CAPZEROBYPASS
if(here->MOS1Cbd != 0 || here->MOS1Cbdsw != 0 ) {
#endif /*CAPZEROBYPASS*/
if (vbd < here->MOS1tDepCap) {
arg=1-vbd/here->MOS1tBulkPot;
/*
* the following block looks somewhat long and messy,
* but since most users use the default grading
* coefficients of .5, and sqrt is MUCH faster than an
* exp(log()) we use this special case code to buy time.
* (as much as 10% of total job time!)
*/
#ifndef NOSQRT
if(model->MOS1bulkJctBotGradingCoeff == .5 &&
model->MOS1bulkJctSideGradingCoeff == .5) {
sarg = sargsw = 1/sqrt(arg);
} else {
if(model->MOS1bulkJctBotGradingCoeff == .5) {
sarg = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sarg = exp(-model->MOS1bulkJctBotGradingCoeff*
log(arg));
#ifndef NOSQRT
}
if(model->MOS1bulkJctSideGradingCoeff == .5) {
sargsw = 1/sqrt(arg);
} else {
#endif /*NOSQRT*/
sargsw =exp(-model->MOS1bulkJctSideGradingCoeff*
log(arg));
#ifndef NOSQRT
}
}
#endif /*NOSQRT*/
*(ckt->CKTstate0 + here->MOS1qbd) =
here->MOS1tBulkPot*(here->MOS1Cbd*
(1-arg*sarg)
/(1-model->MOS1bulkJctBotGradingCoeff)
+here->MOS1Cbdsw*
(1-arg*sargsw)
/(1-model->MOS1bulkJctSideGradingCoeff));
here->MOS1capbd=here->MOS1Cbd*sarg+
here->MOS1Cbdsw*sargsw;
} else {
*(ckt->CKTstate0 + here->MOS1qbd) = here->MOS1f4d +
vbd * (here->MOS1f2d + vbd * here->MOS1f3d/2);
here->MOS1capbd=here->MOS1f2d + vbd * here->MOS1f3d;
}
#ifdef CAPZEROBYPASS
} else {
*(ckt->CKTstate0 + here->MOS1qbd) = 0;
here->MOS1capbd = 0;
}
#endif /*CAPZEROBYPASS*/
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mospth");
asm("mospth:");
#endif /*DETAILPROF*/
if(SenCond && (ckt->CKTsenInfo->SENmode==TRANSEN)) goto next2;
if ( (ckt->CKTmode & MODETRAN) || ( (ckt->CKTmode&MODEINITTRAN)
&& !(ckt->CKTmode&MODEUIC)) ) {
/* (above only excludes tranop, since we're only at this
* point if tran or tranop )
*/
/*
* calculate equivalent conductances and currents for
* depletion capacitors
*/
/* integrate the capacitors and save results */
error = NIintegrate(ckt,&geq,&ceq,here->MOS1capbd,
here->MOS1qbd);
if(error) return(error);
here->MOS1gbd += geq;
here->MOS1cbd += *(ckt->CKTstate0 + here->MOS1cqbd);
here->MOS1cd -= *(ckt->CKTstate0 + here->MOS1cqbd);
error = NIintegrate(ckt,&geq,&ceq,here->MOS1capbs,
here->MOS1qbs);
if(error) return(error);
here->MOS1gbs += geq;
here->MOS1cbs += *(ckt->CKTstate0 + here->MOS1cqbs);
}
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mospti");
asm("mospti:");
#endif /*DETAILPROF*/
if(SenCond) goto next2;
/*
* check convergence
*/
if ( (here->MOS1off == 0) ||
(!(ckt->CKTmode & (MODEINITFIX|MODEINITSMSIG))) ){
if (Check == 1) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
#ifndef NEWCONV
} else {
tol=ckt->CKTreltol*MAX(FABS(cdhat),
FABS(here->MOS1cd))+ckt->CKTabstol;
if (FABS(cdhat-here->MOS1cd) >= tol) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
} else {
tol=ckt->CKTreltol*MAX(FABS(cbhat),
FABS(here->MOS1cbs+here->MOS1cbd))+
ckt->CKTabstol;
if (FABS(cbhat-(here->MOS1cbs+here->MOS1cbd)) > tol) {
ckt->CKTnoncon++;
ckt->CKTtroubleElt = (GENinstance *) here;
}
}
#endif /*NEWCONV*/
}
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptj");
asm("mosptj:");
#endif /*DETAILPROF*/
/* save things away for next time */
next2: *(ckt->CKTstate0 + here->MOS1vbs) = vbs;
*(ckt->CKTstate0 + here->MOS1vbd) = vbd;
*(ckt->CKTstate0 + here->MOS1vgs) = vgs;
*(ckt->CKTstate0 + here->MOS1vds) = vds;
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptk");
asm("mosptk:");
#endif /*DETAILPROF*/
/*
* meyer's capacitor model
*/
if ( ckt->CKTmode & (MODETRAN | MODETRANOP | MODEINITSMSIG) ) {
/*
* calculate meyer's capacitors
*/
/*
* new cmeyer - this just evaluates at the current time,
* expects you to remember values from previous time
* returns 1/2 of non-constant portion of capacitance
* you must add in the other half from previous time
* and the constant part
*/
if (here->MOS1mode > 0){
DEVqmeyer (vgs,vgd,vgb,von,vdsat,
(ckt->CKTstate0 + here->MOS1capgs),
(ckt->CKTstate0 + here->MOS1capgd),
(ckt->CKTstate0 + here->MOS1capgb),
here->MOS1tPhi,OxideCap);
} else {
DEVqmeyer (vgd,vgs,vgb,von,vdsat,
(ckt->CKTstate0 + here->MOS1capgd),
(ckt->CKTstate0 + here->MOS1capgs),
(ckt->CKTstate0 + here->MOS1capgb),
here->MOS1tPhi,OxideCap);
}
vgs1 = *(ckt->CKTstate1 + here->MOS1vgs);
vgd1 = vgs1 - *(ckt->CKTstate1 + here->MOS1vds);
vgb1 = vgs1 - *(ckt->CKTstate1 + here->MOS1vbs);
if(ckt->CKTmode & (MODETRANOP|MODEINITSMSIG)) {
capgs = 2 * *(ckt->CKTstate0+here->MOS1capgs)+
GateSourceOverlapCap ;
capgd = 2 * *(ckt->CKTstate0+here->MOS1capgd)+
GateDrainOverlapCap ;
capgb = 2 * *(ckt->CKTstate0+here->MOS1capgb)+
GateBulkOverlapCap ;
} else {
capgs = ( *(ckt->CKTstate0+here->MOS1capgs)+
*(ckt->CKTstate1+here->MOS1capgs) +
GateSourceOverlapCap );
capgd = ( *(ckt->CKTstate0+here->MOS1capgd)+
*(ckt->CKTstate1+here->MOS1capgd) +
GateDrainOverlapCap );
capgb = ( *(ckt->CKTstate0+here->MOS1capgb)+
*(ckt->CKTstate1+here->MOS1capgb) +
GateBulkOverlapCap );
}
if(ckt->CKTsenInfo){
here->MOS1cgs = capgs;
here->MOS1cgd = capgd;
here->MOS1cgb = capgb;
}
/*
*/
#ifdef DETAILPROF
asm(" .globl mosptl");
asm("mosptl:");
#endif /*DETAILPROF*/
/*
* store small-signal parameters (for meyer's model)
* all parameters already stored, so done...
*/
if(SenCond){
if((ckt->CKTsenInfo->SENmode == DCSEN)||
(ckt->CKTsenInfo->SENmode == ACSEN)){
continue;
}
}
#ifndef PREDICTOR
if (ckt->CKTmode & (MODEINITPRED | MODEINITTRAN) ) {
*(ckt->CKTstate0 + here->MOS1qgs) =
(1+xfact) * *(ckt->CKTstate1 + here->MOS1qgs)
- xfact * *(ckt->CKTstate2 + here->MOS1qgs);
*(ckt->CKTstate0 + here->MOS1qgd) =
(1+xfact) * *(ckt->CKTstate1 + here->MOS1qgd)
- xfact * *(ckt->CKTstate2 + here->MOS1qgd);
*(ckt->CKTstate0 + here->MOS1qgb) =
(1+xfact) * *(ckt->CKTstate1 + here->MOS1qgb)
- xfact * *(ckt->CKTstate2 + here->MOS1qgb);
} else {
#endif /*PREDICTOR*/
if(ckt->CKTmode & MODETRAN) {
*(ckt->CKTstate0 + here->MOS1qgs) = (vgs-vgs1)*capgs +
*(ckt->CKTstate1 + here->MOS1qgs) ;
*(ckt->CKTstate0 + here->MOS1qgd) = (vgd-vgd1)*capgd +
*(ckt->CKTstate1 + here->MOS1qgd) ;
*(ckt->CKTstate0 + here->MOS1qgb) = (vgb-vgb1)*capgb +
*(ckt->CKTstate1 + here->MOS1qgb) ;
} else {
/* TRANOP only */
*(ckt->CKTstate0 + here->MOS1qgs) = vgs*capgs;
*(ckt->CKTstate0 + here->MOS1qgd) = vgd*capgd;
*(ckt->CKTstate0 + here->MOS1qgb) = vgb*capgb;
}
#ifndef PREDICTOR
}
#endif /*PREDICTOR*/
}
bypass:
if(SenCond) continue;
if ( (ckt->CKTmode & (MODEINITTRAN)) ||
(! (ckt->CKTmode & (MODETRAN)) ) ) {
/*
* initialize to zero charge conductances
* and current
*/
gcgs=0;
ceqgs=0;
gcgd=0;
ceqgd=0;
gcgb=0;
ceqgb=0;
} else {
if(capgs == 0) *(ckt->CKTstate0 + here->MOS1cqgs) =0;
if(capgd == 0) *(ckt->CKTstate0 + here->MOS1cqgd) =0;
if(capgb == 0) *(ckt->CKTstate0 + here->MOS1cqgb) =0;
/*
* calculate equivalent conductances and currents for
* meyer"s capacitors
*/
error = NIintegrate(ckt,&gcgs,&ceqgs,capgs,here->MOS1qgs);
if(error) return(error);
error = NIintegrate(ckt,&gcgd,&ceqgd,capgd,here->MOS1qgd);
if(error) return(error);
error = NIintegrate(ckt,&gcgb,&ceqgb,capgb,here->MOS1qgb);
if(error) return(error);
ceqgs=ceqgs-gcgs*vgs+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->MOS1qgs);
ceqgd=ceqgd-gcgd*vgd+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->MOS1qgd);
ceqgb=ceqgb-gcgb*vgb+ckt->CKTag[0]*
*(ckt->CKTstate0 + here->MOS1qgb);
}
/*
* store charge storage info for meyer's cap in lx table
*/
/*
* load current vector
*/
ceqbs = model->MOS1type *
(here->MOS1cbs-(here->MOS1gbs-ckt->CKTgmin)*vbs);
ceqbd = model->MOS1type *
(here->MOS1cbd-(here->MOS1gbd-ckt->CKTgmin)*vbd);
if (here->MOS1mode >= 0) {
xnrm=1;
xrev=0;
cdreq=model->MOS1type*(cdrain-here->MOS1gds*vds-
here->MOS1gm*vgs-here->MOS1gmbs*vbs);
} else {
xnrm=0;
xrev=1;
cdreq = -(model->MOS1type)*(cdrain-here->MOS1gds*(-vds)-
here->MOS1gm*vgd-here->MOS1gmbs*vbd);
}
*(ckt->CKTrhs + here->MOS1gNode) -=
(model->MOS1type * (ceqgs + ceqgb + ceqgd));
*(ckt->CKTrhs + here->MOS1bNode) -=
(ceqbs + ceqbd - model->MOS1type * ceqgb);
*(ckt->CKTrhs + here->MOS1dNodePrime) +=
(ceqbd - cdreq + model->MOS1type * ceqgd);
*(ckt->CKTrhs + here->MOS1sNodePrime) +=
cdreq + ceqbs + model->MOS1type * ceqgs;
/*
* load y matrix
*/
*(here->MOS1DdPtr) += (here->MOS1drainConductance);
*(here->MOS1GgPtr) += ((gcgd+gcgs+gcgb));
*(here->MOS1SsPtr) += (here->MOS1sourceConductance);
*(here->MOS1BbPtr) += (here->MOS1gbd+here->MOS1gbs+gcgb);
*(here->MOS1DPdpPtr) +=
(here->MOS1drainConductance+here->MOS1gds+
here->MOS1gbd+xrev*(here->MOS1gm+here->MOS1gmbs)+gcgd);
*(here->MOS1SPspPtr) +=
(here->MOS1sourceConductance+here->MOS1gds+
here->MOS1gbs+xnrm*(here->MOS1gm+here->MOS1gmbs)+gcgs);
*(here->MOS1DdpPtr) += (-here->MOS1drainConductance);
*(here->MOS1GbPtr) -= gcgb;
*(here->MOS1GdpPtr) -= gcgd;
*(here->MOS1GspPtr) -= gcgs;
*(here->MOS1SspPtr) += (-here->MOS1sourceConductance);
*(here->MOS1BgPtr) -= gcgb;
*(here->MOS1BdpPtr) -= here->MOS1gbd;
*(here->MOS1BspPtr) -= here->MOS1gbs;
*(here->MOS1DPdPtr) += (-here->MOS1drainConductance);
*(here->MOS1DPgPtr) += ((xnrm-xrev)*here->MOS1gm-gcgd);
*(here->MOS1DPbPtr) += (-here->MOS1gbd+(xnrm-xrev)*here->MOS1gmbs);
*(here->MOS1DPspPtr) += (-here->MOS1gds-xnrm*
(here->MOS1gm+here->MOS1gmbs));
*(here->MOS1SPgPtr) += (-(xnrm-xrev)*here->MOS1gm-gcgs);
*(here->MOS1SPsPtr) += (-here->MOS1sourceConductance);
*(here->MOS1SPbPtr) += (-here->MOS1gbs-(xnrm-xrev)*here->MOS1gmbs);
*(here->MOS1SPdpPtr) += (-here->MOS1gds-xrev*
(here->MOS1gm+here->MOS1gmbs));
}
}
return(OK);
}
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