Статьи на перевод PVDF_P(VDF-TrFE) / Characterization of Poly(vinylidene fluoride-trifluoroethylene) 50-50
.pdfReferences
1.B. C. Shekar, J. Lee, and S. -W. Rhee, Korean J. Chem. Eng., 21, 267 (2004).
2.J. Veres, S. Ogier, and G. Lloyd, Chem. Mater., 16, 4543 (2004).
3.M. C. Hamilton, S. Martin, and J. Kanicki, Chem. Mater., 16, 4699 (2004).
4.M. -H. Yoon, H. Yan, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc., 127, 10388 (2005).
5.Y. Yang, J. Ouyang, L. Ma, R. J. -H. Tseng, and C. -W. Chu, Adv. Funct. Mater.,
16, 1001 (2006).
6.T. W. Kelley, P. F. Baude, C. Gerlach, D. E. Ender, D. Muyres, M. A. Haase, D. E. Vogel, and S. D. Theiss, Chem. Mater., 16, 4413 (2004).
7.A. Stadler and M. Burghart, IEEE Trans. Dielectr. Eectr. Insul., 13, 850 (2006).
8.C. D. Dimitrakopoulos and D. J. Mascaro, IBM J. Res. Dev., 45, 11 (2001).
9.J. M. Shaw and P. F. Seidler, IBM J. Res. Dev., 45, 3 (2001).
10.L. Torsi and A. Dodabalapur, Anal. Chem. A, 77, 381A (2005).
11.B. Stadloher, M. Zirkl, M. Beutl, G. Leising, S. Bauer-Gogonea, and S. Bauer,
Appl. Phys. Lett., 86, 242902 (2005).
12.T. J. Reece, S. Ducharme, A. V. Sorokin, and M. Poulsen, Appl. Phys. Lett., 82, 142 (2003).
13.R. C. G. Naber, C. Tanase, P. W. M. Blom, G. H. Gelinck, A. W. Marsman, F. J. Touwslager, S. Setayesh, and D. M. D. Leeuw, Nat. Mater., 4, 243 (2005).
14.Y. X. Li, L. Yan, R. P. Shrestha, D. Yang, Z. Ounaies, and E. A. Irene, Thin Solid Films, 513, 283 (2006).
15.R. C. G. Naber, B. D. Boer, P. W. M. Blom, and D. M. D. Leeuw, Appl. Phys. Lett., 87, 203509 (2005).
16.K. Muller, I. Paloumpa, K. Henkel, and D. Schmeiber, Mater. Sci. Eng. C, 26, 1028 (2006).
17.D. K. Hwang, J. H. Park, J. Lee, J. -M. Choi, J. H. Kim, E. Kim, and S. Im, J. Electrochem. Soc., 153, G23 (2006).
18.T. Oh, IEEE Trans. Nanotech., 5, 23 (2006).
19.H. Klauk, M. Halik, U. Zschieschang, G. Schmid, and W. Radlik, J. Appl. Phys.,
92, 5259 (2002).
20.R. Parashkov, E. Becker, G. Ginev, T. Riedl, H. H. Johannes, and W. Kowalsky, J. Appl. Phys., 95, 1594 (2004).
21.X. Peng, G. Horowitz, D. Fichou, and F. Garnier, Appl. Phys. Lett., 57, 2013 (1990).
22.X. Haisheng, J. Appl. Poly. Sci., 80, 2259 (2001).
23.M. A. Bachman, W. L. Gordon, S. Weinhold, and J. B. Lando, J. Appl. Phys., 51, 5095 (1980).
24.M. I. Alcan and C. Topacli, Polym. Int., 50, 835 (2001).
25.R. Ruiz, D. Choudhary, B. Nickel, T. Toccoli, K. -C, Chang, A. C. Mayer, P. Clancy, J. M. Blakely, R. L. Headrich, S. Iannotta, and G. G. Malliaras, Chem. Mater., 16, 4497 (2004).
26.S. M. Sze, Physics of Semiconductor Devices, 2nd ed., Chap. 7, Wiley, New York (1981).
27.Y. K. Lee and S. P. Muraka, Mater. Res. Bull., 34, 869 (1999).
28.I. Musa and W. Eccleston, Thin Solid Films, 343-344, 469 (1999).
29.A. J. Lovinger, T. Furukawa, G. T. Davis and M. G. Broadhurst, Polymer, 24, 1225 (1983).
30.T. Furukawa, Phase Transit., 18, 143 (1989).
31.M. Na and S. -W. Rhee, Org. Electron., 7, 205 (2006).
Figure captions:
Figure 1. Molecular structure of Poly(vinylidene fluoride-trifluoroethylene) 50/50 copolymer.
Figure 2. Thickness variation of P(VDF-TrFE) films at different spin speeds and concentrations in 2-butanone solvent (a) 0.4 g/cc (b) 0.5 g/cc (c) 0.6 g/cc.
Figure 3. Concentration effect on the (PVDF-TrFE) film thickness at uniform spin speed (3000 rpm).
Figure 4. In-situ measurement of P(VDF-TrFE) thin film thickness with spectroscopic ellipsometry as a function of the temperature.
Figure 5. The AFM images (2 µm × 2 µm) of P(VDF-TrFE) film (a) as-deposited and annealed at (b) 70 (c) 100 (d) 150 and (e) 200.
Figure 6. X-ray diffraction pattern of P(VDF-TrFE) film (a) as-deposited and annealed at
(b) 70 (c) 100 (d) 150 and (e) 200.
Figure 7. Capacitance-Voltage (C-V) characteristics of the Al/P(VDF-TrFE) film/p-type Si structure at 1MHz (a) as-deposited and annealed at (b) 70 (c) 100 (d) 150 and
(e) 200. Capacitance of each film was normalized with maximum capacitance of the as deposited film.
Figure 8. Dielectric constant of P(VDF-TrFE) film at 1MHz as a function of the annealing temperature.
Figure 9. Current-Voltage (I-V) characteristics of P(VDF-TrFE) film (a) as-deposited and annealed at (b) 70 (c) 100 (d) 150 and (e) 200.
______________________________________________________________________
Table 1 Experimental condition. |
|
Polymer |
P(VDF-TrFE) |
Substrate |
p-type Si (100), boron doped |
Solvent |
2-Butanone (B.P. 80˚C) |
Electrode |
Aluminum |
Solution loading amount |
0.2~0.25 ml |
Concentration (solute/solvent) |
0.4 – 0.6 g/cc |
Spin speed (rpm) |
1000~7000 |
Annealing temperature |
RT, 70, 100, 150, 200 ºC |
Annealing condition |
Ar, 60 min. |
H |
|
F |
|
|
H |
|
F |
|
|||||
|
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C |
|
C |
|
|
|
C |
|
C |
|
||||
|
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
H |
|
H m |
|
|
F |
|
F |
n |
|||||
|
|
|
|||||||||||
Figure 1. Wi and Rhee
Thickness (A)
6000 |
(a) |
|
(b) |
5000 |
(c) |
|
4000
3000
2000
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2000 |
4000 |
6000 |
|
|||
|
||||||
Spin speed (RPM)
Figure 2. Wi and Rhee
Thickness (A)
5000
4000
3000
2000
0.4 |
0.5 |
0.6 |
Concentration(g/cc)
Figure 3. Wi and Rhee
Figure 4. Wi and Rhee
