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388 14 Broken symmetry states of metals

model (6.1.14):

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

σ1coll(ω) =

 

N e2

 

 

 

 

 

 

ω2

 

 

 

 

 

(14.2.2a)

 

m ω02 ω2 2 + (ω/τ )2

 

 

coll

 

 

N e2

 

 

 

ω ω02

ω2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(ω/τ

)

 

 

(14.2.2b)

σ2 (ω) =

m

 

ω

2

2 2

+

2

,

ω

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

and the collective mode contribution to σˆ (ω) now appears as a harmonic oscillator at finite frequencies – with the same oscillator strength as given in Eq. (7.2.15a).

The mass m of the condensate is large in the case of charge density waves, for which the condensate develops as the consequence of electron–phonon interactions. As given by Eq. (7.2.13), the effective mass m /m is large,

m

= 1 +

 

4 2

,

(14.2.3)

mb

λ h2

ω2

 

 

 

P ¯

P

 

if the gap is larger than the corresponding phonon frequency ωP. Because of the larger mass, the oscillator strength associated with the collective mode is small, and thus the Tinkham–Ferrell sum rule is modified, as we have discussed in Section 7.5.3. For an effective mass m /mb 1, nearly all of the contributions to the total spectral weight come, even in the clean limit, from single-particle excitations.

This behavior can be clearly seen by experiment if the optical conductivity is measured over a broad spectral range. In Fig. 14.8 the frequency dependent conductivity σ1(ω) is displayed for a number of materials in their charge and spin density wave states [Gru88, Gru94a]. In all cases two absorption features are seen: one typically in the microwave and one in the infrared spectral range. The former corresponds to the response of the collective mode at finite frequency ω0, and the latter is due to single-particle excitations across the charge density wave gap. A few remarks are in order. First, it has been shown that impurities are responsible for pinning the mode to a well defined position in the crystal, thus ω0 is impurity concentration dependent. Second, the spectral weight of the mode is small; fitting the observed resonance to a harmonic oscillator as described in Eq. (14.2.1) leads to a large effective mass m . Third, there is a well defined onset for the single-particle excitations at 2 (typically in the infrared spectral range). The gap is in good overall agreement with the gap obtained from the temperature dependent conductivity in the density wave state. At temperatures well below

the transition temperature, where (T ) is close to its T

= 0 value , the dc

conductivity reads

 

 

 

 

 

 

 

σdc(T ) = σ0 exp

 

,

(14.2.4)

kBT

Conductivity σ1

14.2

Density waves

389

Energy hω (meV)

 

103 102

101 100

101 102

103

 

 

NbSe3

 

 

 

TaS3

 

 

 

(TaSe4)2I

 

 

 

K0.3MoO3

 

 

 

KCP

 

 

 

(TMTSF)2PF6

 

102

100

102

104

Frequency ν (cm1)

Fig. 14.8. Frequency dependent conductivity σ1(ω) measured in several compounds in their charge and spin density states (after [Don94, Gru88]). The data are shown for the direction parallel to the highly conducting axis. The arrow indicates the gap measured by tunneling for NbSe3. The dashed lines are fits to the data by Eq. (14.2.2a).

and the gap can also be found from dc transport measurements. Fourth, the behavior of σ1(ω) above the gap is distinctively different from the σ1(ω) we observe for superconductors. Instead of the smooth increase of σ1(ω) as h¯ ω exceeds the gap energy, here one finds a maximum above 2 , much like what one would expect for the case 1 coherence factor displayed in Fig. 7.2.

One can use optical data, such as displayed in Fig. 14.8, to establish the relationship between the mass enhancement m /m and the single-particle gap 2 . In Fig. 14.9 the effective mass obtained from the fit of the low frequency resonance by Eqs (14.2.2) is plotted versus the gap energy . The full line is the result of Eq. (14.2.3), with λP = 0.5 and h¯ ωP = 34 meV – both reasonable values for the materials summarized in the figure.

390

14 Broken symmetry states of metals

Density wave gap ∆ (meV)

104

(NbSe4)2I

TaS3 KCP

K0.3MoO3 (TaSe4)2I 102

NbSe3

102

103

104

 

Effective mass m* / m

 

Fig. 14.9. Single-particle gaps of various materials with a charge density wave ground state versus the effective mass values m /m of the condensate; the data are obtained by analyzing optical experiments. The full line is Eq. (7.2.13) with λP = 0.5 and ωP/2π c = 35 cm1 (after [Gru94b]).

In contrast to superconductors, at zero frequency the response is capacitive because of the restoring force acting on the condensate. In the presence of impurities, the force K – and consequently ω0 – are small, and the static dielectric constant is therefore enormous. Including also the contributions from the single-particle excitations, the zero frequency dielectric constant is written as

 

 

 

 

 

 

 

4π N e 4π N e2h2

 

 

 

 

 

 

 

 

1

 

0)

 

1

 

 

 

¯

 

1

 

coll

 

sp

,

(14.2.5)

=

+ m ω02 +

=

+

+

 

 

 

 

6mb 2

 

1

1

 

 

where the second and third terms on the right hand side represent the collective and single-particle contributions to the dielectric constant. In the above equation we have used the tight binding model of a one-dimensional semiconductor to account for the contribution of single-particle excitations to the dielectric constant. With ω0/2π = 1010 s1, and for a mass m /m = 103, the zero frequency dielectric constant is expected to be of the order of 10) 106; indeed such enormous values have been observed in materials with charge density wave ground states [Gru88].

14.2 Density waves

391

Fig. 14.10. Dynamics of the internal deformations of density waves. The top part of the figure is the undistorted density wave; the middle part shows the mode distorted due to interaction with impurities (full circles); and the bottom part displays the rearrangement of the internal distortion by displacing the density wave period over the impurity as indicated by the arrow. The process leads to an internal polarization P = −2eλDW, where λDW is the wavelength of the density wave.

To describe the effect of impurities by an average restoring force K is a gross oversimplification since it neglects the dynamics of the local deformations of the collective modes. The types of processes which have been neglected are shown in Fig. 14.10. The top part of the figure displays an undistorted density wave, with a period λDW = π/ kF and a constant phase φ. In the presence of impurities, the density wave is pinned as shown in the middle section of the figure. A low lying excitation, which involves the dynamics of the internal deformations, is indicated at the bottom; here a density wave segment has been displaced by λDW, leading to a stretched density wave to the left and to a compressed part to the right side of the impurity. The local deformation leads to an internal polarization of the mode by virtue of the displaced charge which accompanies the stretched or compressed density wave. This polarization P is given by the spatial derivative of the phase

P(r) = −4π e

∂φ (r)

 

.

r

For randomly positioned impurities we expect a broad distribution of the time and energy scales for the processes which reflect the dynamics of such interband deformations. Such effects (a response typical to a glass) are described by a broad superposition of Debye type relaxation processes, and various phenomenological expressions have been proposed to account for the low frequency and long-time behavior of the electrical response. Among these, the so-called Cole–Cole expression

392

14 Broken symmetry states of metals

Conductivity σ1 (1 cm1)

 

Frequency ν (cm1)

 

 

108

106

104

102

100

102

104

(TMTSF)2PF6

 

 

103

 

 

T = 2 K

 

 

 

102

 

 

 

 

 

101

 

 

 

 

 

100

 

 

 

K0.3MoO3

101

 

 

 

 

 

 

T = 40 K

102

 

 

 

 

 

103

104

106

108

1010

1012

102

Frequency f (Hz)

Fig. 14.11. Low frequency conductivity of K0.3MoO3 and (TMTSF)2PF6 in their density wave states (after [Don94]). The well defined peaks correspond to the pinning frequencies ω0, and the dashed lines indicate the response of harmonic oscillators as expected for the collective mode with no internal deformation. The full lines model the low frequency response by Eq. (14.2.6).

(see for example [Nga79]),

(ω)

=

ˆ0)

,

(14.2.6)

1 + (iωτ0)1α

ˆ

 

 

where τ0 is an average relaxation time and α < 1, is frequently used to describe the so-called glassy behavior of a variety of random systems. Such low frequency relaxation effects lead to an enhanced ac conductivity at low frequencies, such as that shown in Fig. 14.11 for two materials with density wave ground states: (TMTSF)2PF6, which undergoes a spin density wave transition at TSDW = 12 K, and K0.3MoO3, which enters the charge density wave ground state below TCDW = 180 K. The dashed lines indicate the description in terms of a harmonic oscillator, with pinning frequencies of 6 × 109 Hz and 1011 Hz, respectively, and the full lines are fits to Eq. (14.2.6). While this description offers little insight into the

Reflectivity R

1.0 100

0.8

 

 

0.6

 

4

 

 

 

(15 K)

3

0.4

2

σ

 

1

 

 

(T) /

 

 

1

1

 

σ

0.2

 

 

 

 

0 0

0

10

1

 

14.2 Density waves

393

 

 

Energy

hω (meV)

 

 

 

 

 

 

 

 

 

101

 

 

 

 

102

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T =

15 K

(TMTSF)2PF6

 

 

 

 

 

 

 

 

 

 

 

T = 6 K

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

14 K

13 K

12 K

6 K

50

 

100

 

 

150

200

 

 

 

 

 

 

 

 

Frequency ν (cm1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

102

103

 

 

Frequency ν (cm1)

Fig. 14.12. Frequency dependent reflectivity R(ω) of (TMTSF)2PF6 measured perpendicular to the highly conducting axis at temperatures above and below TSDW = 12 K. At

T = 15 K the low frequency response is that of a Drude metal; below TSDW the SDW gap opens as the temperature is lowered (after [Ves99]). The inset shows the normalized

conductivity spectra at various temperatures. The optical properties are those of a semiconductor with a gap of = 70 cm1, but can also be well described by the Mattis–Bardeen formalism, with case 1 coherence factors [Dre99].

microscopic details of the density wave dynamics, it is useful to establish that the response is due to a broad distribution of relaxation times, a feature which often occurs in glasses and amorphous structures – here we have a density wave glass, the properties of which have not yet been fully explored.

14.2.2 Single-particle excitations

Single-particle excitations of density waves have a character which is different from single-particle excitations of superconductors due to the different coherence

394

14 Broken symmetry states of metals

factors which occur in the two types of condensates. Case 1 coherence factors lead to a peak in the optical conductivity at the gap frequency as displayed in Fig. 7.2, in contrast to the gradual rise of the conductivity above the gap in the case of superconductors for which case 2 coherence factors apply.

This has also been most clearly observed in materials which undergo transitions to an incommensurate spin density wave state, with the best example the organic linear chain compound (TMTSF)2PF6. The normal state properties of this material when measured along the highly conducting direction – the direction along which the incommensurate density structure develops – cannot be described by a straightforward Drude response, and therefore a simple analysis of the optical properties of the density state is not possible. When measured with electric fields perpendicular to the highly conducting axis, such complications do not arise; also, along this direction the density wave is commensurate with the underlying lattice and thus the collective mode contribution to the conductivity is absent, due to this so-called commensurability pinning. Below the transition to the spin density wave state, a well defined gap develops, as evidenced by the drop in reflectivity at frequencies around 70 cm1; the data are displayed in Fig. 14.12. What we observe is similar to what can be calculated for case 1 coherence factors and what is displayed in Fig. 7.8. The reflectivity can also be analyzed to lead to the frequency dependent conductivity σ1(ω), which for several different temperatures is displayed in the inset of the figure. The singularity at the gap of 70 cm1, at temperatures much lower than the transition temperature, is characteristic to a one-dimensional semiconductor, and this value, together with the transition temperature TSDW = 12 K, places this material in the strong coupling spin density wave limit. The gap feature progressively broadens, and also moves to lower frequencies, and an appropriate analysis can be performed. Such studies conducted at different temperatures can also be used to evaluate the temperature dependence of the single gap [Ves99]; there is an excellent agreement with results of other methods [Dre99].

14.2.3 Frequency and electric field dependent transport

A few comments on the non-linear response are in order here. Because of the weak restoring force acting on density wave condensates, moderate electric fields may depin the collective mode, leading to a dc, non-linear conduction process. Of course, the smaller the restoring force – and thus the larger the low frequency dielectric constant 1 – the smaller the threshold field ET which is required for depinning. The arguments lead to a particularly simple relation between the dielectric constant and threshold field:

1= 0)ET = 4π eNDW ,

(14.2.7)

References

395

where NDW is the number of atoms in the area perpendicular to the direction along which the density wave develops. This relation has indeed been confirmed in a wide range of materials with charge density wave ground states [Gru89]. The intimate relationship between the dielectric constant and fields which characterize the non-linear response is, however, more general; a relation similar to that above can be derived, for example, for Zener tunneling of semiconductors. The topic of non-linear and frequency dependent response with all of its ramifications is, however, beyond the scope of this book.

 

References

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[Bar61]

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[Din53]

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[Gru89]

G. Gruner¨ and P. Monceau, Dynamical Properties of Charge Density Waves,

 

in: Charge Density Waves in Solids, Modern Problems in Condensed Matter

 

Sciences 25, edited by L. P. Gor’kov and G. Gruner¨ (North-Holland,

 

Amsterdam, 1989), p. 137

[Gru94a]

G. Gruner,¨ Rev. Mod. Phys. 66, 1 (1994)

[Gru94b]

G. Gruner,¨ Density Waves in Solids (Addison-Wesley, Reading, MA, 1994)

[Hal71]

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K. Kornelsen, M. Dressel, J.E. Eldridge, M.J. Brett, and K.L. Westra, Phys.

 

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[McM68]

W.L. McMillan, Phys. Rev. 167, 331 (1968)

[McM69]

W.L. McMillan and J.M. Rowell, Tunneling and Strong-Coupling

396

14 Broken symmetry states

 

Superconductivity in: Superconductivity, edited by R.D. Parks (Marcel

 

Dekker, New York, 1969), p. 561

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P.B. Miller, Phys. Rev. 118, 928 (1960)

[Mit84]

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L.H. Palmer and M. Tinkham, Phys. Rev. 165, 588 (1968)

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A.B. Pippard, The Dynamics of Conduction Electrons, in: Low Temperature

 

Physics, edited by C. DeWitt, B. Dreyfus, and P.G. deGennes (Gordon and

 

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Further reading

[Bio58]

M.A. Biondi et al., Rev. Mod. Phys. 30, 1109 (1958)

[Cox95]

D.E. Cox and B. Maple, Phys. Today 48, 32 (Feb. 1995)

[Gin69]

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Experimental Results with Predictions of the BCS Theory, in:

 

Superconductivity, edited by R.D. Parks (Marcel Dekker, New York, 1969)

[Gol89]

A.I. Golovashkin, ed., Metal Optics and Superconductivity (Nova Science

 

Publishers, New York, 1989)

[Gor89]

L. P. Gor’kov and G. Gruner,¨ eds, Charge Density Waves in Solids, Modern

 

Problems in Condensed Matter Sciences 25 (North-Holland, Amsterdam,

 

1989)

[Mon85]

P. Monceau, ed., Electronic Properties of Inorganic Quasi-One Dimensional

 

Compounds (Riedel, Dordrecht, 1985)

[Par69]

R.D. Parks, ed., Superconductivity (Marcel Dekker, New York, 1969)

[Sig91]

M. Sigrist and K. Ueda, Rev. Mod. Phys. 63, 239 (1991)

Part four

Appendices