Перевод МММ / 3_%%%% 0648bacc A Study of Nonequilibrium Diffusion Modeling-

1022

FURNACEANNEALING

900

C

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I . I .

J I - 7

, I - , . .

1 0 2 2

. .

FURNACEANNEALING

900 C

, . , . . . , , . . . , , . .

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I . . .

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1.2

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0.2

0.3

0.4

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D e p t h

lprn)

C. Two-DimensionalBehavior

Withthehelp

of asteady-stateformulation,

it was

is only a single report dealing with the effect

of ion-im-

plantationdamageonlateraldiffusion,whichanalyzed

qualitativelythechanges

in junctionprofilesfortwo

boron wasimplantedatadoseandenergyof4

X I O l 3

at/cm2 and 20 keV, and annealed at 800°C for

10 min.

paringtheresultswiththoseobtained

by usinga

20 pm

X 20 pm mesh.

Fig. 12 displaystheboroncontours

at theend

of the

surfaceeffectslimitthesupersaturation

of pointdefects

andthuslimittheamountofanomalousdiffusion

in the

lateraldirection.Anotheroriginalpointcan

be

seen in

-o‘81.Z

I 4

1.6

1.8

20

X Imicronsl

-2.0

0 5

I O

15

2 0

0

eachdiffusionformulation,whenapplied

toveryshort

time annealing.

pled pointdefectsandimpuritydiffusion,”IEEETrans.Compurer-

AidedDes.,vol.

9, no. 10, pp. 1113-1122, Oct. 1990.

1111

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and pointdefectredistribution in thepres-

enceofcrystaldefects,” in IEDM Tech. Dig . , Dec. 1990, pp. 729-

[I21

731.

F. F. Morehead and

R. F. Lever,

“A steady-state model for coupled

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Dec. 1,

1989.

1131

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Dec. 1983.

[14] W.B. Richardson and B.J. Mulvaney,“Plateau and kinkin

P pro-

filesinto Si: A result of strongbimolecularrecombination?”

Appl.

[I51

Phys. Lett., vol. 53, no. 20, pp.

1917-1919, Nov. 14, 1988.

-,

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of chargedpointdefectsduring

phosphorusdiffusion in silicon,”

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2243-2247, Mar. 15. 1989.

1161

B. J. Mulvaney and W. B. Richardson, “The effect of concentration-

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67, no. 6, pp.

3197-3199, Mar. 15,

1990.

1171

T.L.Crandle,W.B.

Richardson,and

B. 1. Mulvaney, “A kinctic

model

foranomalousdiffusionduringpost-implantannealing,”

in

IEDM Tech. Dig., Dec. 1988, pp. 636-639.

1181

M. Heinrich, M. Budil, and H. W. Potzl, “Simulation of arsenic and

borondiffusionduringrapidthermalannealing

in silicon,” in Proc.

ESSDERCPO ConJ, W . Ecclestonand

P. 1. Rosser, Eds.(Not-

tingham,UK,Sept.

1990). pp. 205-208.

1191 G. Hobler, S. Halama, K. Wimmer, S . Selberherr, and H. W. Potzl,

“RTA-simulations

with the 2D process simulator PROMIS,”

in NU-

PADIII(Hawaii,

June 3-4,1990). pp. 13-14.

[20] C. S . Nichols, C. G . Vande

Walle, and S . T. Pantelides, “Mecha-

nisms of dopant impurity diffusionin silicon,” Phys. Rev. B, vol. 40,

no. 8. pp. 5484-5496, Sept.

15.

1989.

[21]

N.E.B.

Cowern, K.T.F.Janssen,G.

F . A. van de Walle, and D.

1 . Gravesteijn,“Impuritydiffusion

viaan intermediatespecies:The

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5 , 1990.

[22]

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model forintrinsicdopantdiffusion in

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Feh.

1985.

[24] B.Baccus.E.Dubois.

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dimensionalmultilayerprocesssimulation

of

advancedbipolarde-

vices,”Solid-StateElectron.,vol. 32. no. l l,pp. 1013-1023, Nov.

1989.

D.Collard, E. Dubois,andD.Morel,“IMPACT4-A

B.Baccus.

general two-dimenslonal multilayer process simulator,” in Proc. SIS-

DEP 111 Con$, G . BaccaraniandM.Rudan,Eds.(Bologna,Italy,

Sept. 1988). pp. 255-266.

N.Shigyo,

S . Nakamura, T.Wada, and S . Yasuda, Mar. 1990, un-

published.

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of goldinsilicod:

A

tool fur understanding the propertiesof sllicon interstitials,” J . Appl.

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June15, 1987.

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Morehead,“Borondiffusioninsiliconathighconcentrations,”

J .

1341 P. Fahey, R. W. Dutton,and

S . M. Hu, “Supersaturation of self-

interstitials and undersaturation

of vacancies during phosphorus dif-

fusionofarsenicandboron

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Oiso,Japan, May 1991.

Bruno Baeeus wasbornin

Lille. France,

on Oc-

tober 6 , 1962. He receivedtheingenieurdegree

from the lnstitut Superieur d’Electroniquedu Nord

(ISEN), Lille,in

I985 and theDoctorat en Elec-

troniquedegree

from the,UniversityofLille

in

1990. His thesis dcalt with two-dimensional mul-

tilayer process simulation.

From May 1990 to May 199 I ,

he was a Visiting

Scientist attheToshiba

ULSI Research

Center,

Kawasaki, Japan, on leave from ISEN.He worked

on processmodelingofRTAanditsapplication

IO bipolar technologies. His research interests center

on process modeling

and shallow junction formation.

Tetsunori Wada (A’88)was bornin

Kamakura,

Japan, in

1951. HereceivedtheB.S.degree

in

appliedphysicsfromtheUniversity

of

Tokyo,

Tokyo,Japan, in

1975.

He then joined the Toshiba Corporation where

he wasengaged

indevelopingmicrolithography

technology from 1975 to 1981. He is currently en-

gaged in the numerical modeling

of semiconduc-

tor devices at the ULSI Research Center.

Mr. Wada isamember

of theJapanApplied

Physics Society.

In 1980,hejoinedtheToshibaResearch

and

DevelopmentCenter,ToshibaCorporation,

Ka-

wasaki,Japan.Hehas

been engazed in thenu-

Japan,in 1963. He receivedtheB.S.degree

in

appliedphysicsfromtheScienceUniversity

of