13.3 Прочитай, переведи текст dry process technology и расположи абзацы в правильной последовательности:

1. Recently, MOS LSI has shifted from LSI phase to VLSI phase, which requires a precise pattern less than 3 Jim. This transition can be achieved by progress in wafer process technology, including mi­crofabrication as well as device and circuits design technologies. Conventional plasma etching is not adequate in VLSI regions for the delineation of precise patterns because of its inherent under­cutting (подтравливающий) effect which results in anisotropic pro­file of an etched pattern.

2. LSI technology has been the cutting edge of the innovate semi­conductor industry. In the field of the process technology, much effort has been made to improve microfabrication and thinner-film formation technology. In particular, improvements in photolitho­graphic and etching techniques are the keys to the integration of more devices on smaller chips, increases in circuit performance, and improvement in wafer process yield.

3. Dry etch technologies available for LSI processing are classi­fied into plasma etch, sputter etch and ion beam etch, with items such as etch mode, apparatus and reaction mechanism.

4. Dry etching technology represents a new and exciting method for defining precise images in insulators, semiconductors, and met­als. Gas plasma etching technology in dry process like RF sputter­ing, ion beam milling, reactive ion etching, and reactive ion beam etching is widely used as a fundamental tool for the fabrication of MOS, bipolar LSIs, discrete devices and hard mask. It results in improved image size, simplification of the manufacturing process, precise shape control of fine patterns, and development of a clean­er manufacturing process, compared with conventional wet chem­ical etching processes.

13.4 Определи о чем идет речь:

1. The process of introducing impurity into the crystalline structure of pure silicon.

2. Any substance added in the doping process, such as arsenic.

3. A patterned plate used to shield sections of the silicon chip sur­face during the manufacture of integrated circuits.

13.5 Прочитай, переведи и озаглавь текст:

An integrated circuit is comprised of a single silicon chip containing transistors, diodes, resistors and capacitors, suitably connected to form a complete circuit. The first successful attempt to produce an integrated circuit, in 1959, made use of mesa construction, but this method is known to be quickly replaced by the use of planar techniques.

The important feature of the planar process is the deposition of a silicon dioxide layer on the top surface of the epitaxial wafer, which acts as a mask against diffusion. The process involves exposing the wa­fer to an oxygen atmosphere at high temperature.

After the oxidation process it is necessary to etch holes in the ox­ide, through which diffusion can take place. The process used is simi­lar to that employed in the manufacture of printed circuit boards. Ini­tially, the oxidized surface is coated with a thin film of photo-sensitive emulsion (photoresist). A mask is manufactured, the pattern of which defines the area to be etched, it being opaque (непрозрачный) where etching is to be performed and transparent where the oxide is to be retained. The mask is brought into contact with the wafer and exposed to ultraviolet light. The photoresist under the transparent area of the mask being subjected to the light becomes polymerized and is not af­fected by the trichlorethylene developer which is subsequently used to dissolve the unexposed resist. When fixed, by baking (отжиг), the re­maining photoresist protects the oxide from the window where diffu­sion is required and, after the surface has been cleaned, the chip is ready for the first diffusion process.

For a p-type diffusion the most generally used dopant proves to be boron. This is deposited on the wafer at high temperature, and dif­fuses through the window into the silicon. Ap-type region is thus cre­ated. The oxidization treatment is now repeated and, in this high-tem- perature process, the open window is sealed with an oxide layer and the base dopant is driven deeper into the silicon. A new mask is used in a second photoresist and etching stage, which opens a window for the diffusion of the emitter region.

For n-type diffusion the most generally used dopants are phospho­rus and arsenic. The cycle is supposed to be repeated yet a third time. The emitter window is sealed by oxidization, the emitter dopant is driven in, and new windows are etched in the oxide layer to define the contact areas. Finally, the contacts are made by the evaporation of aluminium.

In practice many devices are manufactured at the same time on a single sheet of silicon. These are separated by scribing with a diamond stylus and breaking into individual chips. They are then mounted in suitable packages which allow electrical connections to be readily made and power, dissipated as heat, to escape.

It is necessary to be able to electrically isolate individual devices from each other. This is done by surrounding each component with material of opposite polarity and reverse biasing the semiconductor junction so formed.

13.6 Прочитай, переведи текст HIGH PRESSURE OXIDATION OF SILICON и заполни пропуски следующими словами: yield; implement; annealing; fundamental; offer; breakdown; complete; rates.

Silicon oxidation has been a _ process of silicon de­vice technology for a long time. However, an understanding of oxida­tion methods and the phenomena involved is far from _. An oxidation method that has received increased attention over the last few years is a high pressure oxidation method. This method is known to _ a practical means for thermally growing silicon oxides at lower temperatures and faster _ than those grown in conventional wet (влажный) oxidation. Presently, efforts to _ low temperature processes have become a significant driving force in the evolution of silicon device fabrication technology. The lower temperature aspect of high pressure oxidation has its greatest potential impact in the high density world of submicron VLSI where improvements in process con­trol precision will have a significant effect on performance and _.

Thin oxide film grown at low temperature by high pressure oxi­dation has excellent dielectric _ strength.

Developments in high pressure oxidation will become more im­portant with progress in other low temperature processes such as ion implantation, laser _, and plasma enhanced technology dur­ing the next few years.