13.1 Переведи на русский язык:

1. There is a continuous demand for improved metallurgical con­tacts in semiconductor devices.

2. The junction becomes vulnerable to diffusion between the metal layers and silicon.

3. The tremendous interest in small device structures is presently active due to the increasing requirements for obtaining very small circuit elements.

4. The size requirements are becoming increasingly severe.

5. Today, the technology is evolving at an ever-increasing speed.

6. The selection is of primary importance.

7. Increase in the packing density and also the complexity of these devices are primarily due to scaling down of the individual cells.

8. Line width gets narrower.

9. One of the primary considerations is to obtain a material with high electrical conductivity and low ohmic contact resistance.

10. These parameters are to be maintained throughout the high temperatures.

11. The material is to have resistance to the corrosion and oxidation.

12. Films of this thickness are likely to be very difficult to deposit in a continuous manner.

13. The most highly conductive film reported today was obtained by a metal-rich concentration.

14. Films produced by sputtering both exhibited a tetragonal crys­tal structure.

15. The resistivity of the MoSi film was found to be less than that of polysilicon.

16. The temperature for recrystallization to obtain the lowest pos­sible resistivity in effect is controlled by impurities.

17. The films used were found to be mechanically strong.

18. The film composition changed with time due to the different sputter.

19. Polysilicon has been the dominant interconnect material.

20. The plasma-etching process has been shown to have important advantages in terms of cost.

21. The phosphorus concentration had no influence on the resis­tivity of the film.

22. The control method has only recently been applied to the design.

23. There have been no directly comparable projects.

24. Any potential microprocessor user now has to make a choice from plenty of ICs.

13.2 Прочитай, переведи и выучи наизусть:

Вариант 1

LAYING DOWN THIN FILM

Most often, thin-film deposition on a ceramic substrate is done in a vacuum chamber by evaporating or sputtering conductive, resistive, or dielectric material on a carefully cleaned substrate.

The vacuum prevents oxidation and allows the molecules of ma­terial being deposited to travel to the target with minimum collisions with gas molecules.

Вариант 2

EVAPORATION AND SPUTTERING

In the case of evaporation, the material to be deposited is heated by a resistive heating unit until the molecules acquire the thermal energy necessary to leave the surface at a suitable speed to ensure deposition.

Sputtering differs from evaporation in that an electrical field ac­celerates the positive gas ions toward a cathode that is covered with a material to be deposited. An ion striking the cathode causes a mole­cule to be ejected and deposited on the substrate.

Вариант 3

RAPID THERMAL PROCESSING

RTP is one of the exciting new wafer fabrication technologies. Its origin can be traced to the laser annealing (отжиг) research of the ear­ly 1980’s, but it is only with the very recent appearance of techniques and equipment suitable for use in production that the technique has begun to attract serious attention of process engineers.

Current applications for RTP include ion implant annealing, glass reflow, silicide formation, and deposition of thin gate oxides. The RTP equipment market is expected to have one of the highest growth fac­tors in the equipment industry.

Вариант 4

TUNGSTEN

Tungsten is of particular interest in IC technology because it can be deposited in a self-aligning (самосовмещенный) chemically se­lective manner on silicon, metals, or silicides. Its volume filling capa­bility serves to enhance planarity, a high priority in multilevel chip de­signs, and because it can be deposited without additional masks, pro­cess complexity is reduced with savings in cost.

Selective low-pressure chemical vapour deposition (LPCVD) of tungsten can provide diffusion and etch barriers via fills, low resistance source, drain and gate shunts, masks for X-ray lithography and many others.

The last years have been a time of rapid progress in LPCVD tung­sten technology.