10.E Переведи следующие предло­жения, обращая внимание на значения слов one (ones):

1. These shapes are too large; show me smaller ones, please.

2. One should be very attentive when you subject the metals to large stress.

3. One never knows the result of the experiment.

4. This computer is more powerful than the one we need.

5. This antenna allows one to receive very weak signals.

6. One can expect better results in two days.

7. We want to buy a big TV for the sitting room and a smaller one for the kitchen.

8. One must study hard to pass the examinations.

9. That is clear without explanation.

10. The methods they use are not the ones that lead to success.

11. The more one reads, the more one knows.

12. This dictionary is too small; I’ll need a bigger one.

10.F Переведи следующие предложения, обращая внимание на значения слов that (those):

1. They knew that the experiment was a failure.

2. That was the work that they continued to do.

3. That he wanted to stay at his friends a little more wasn’t a news.

4. She said that she wouldn’t buy the dress that she liked.

5. The problem is that they haven’t recorded the results of experiment.

6. The question that was discussed at the meeting yesterday is very important.

7. Those buildings belong to our University.

8. We didn’t expect that all those things were so important.

9. What was that he wanted?

10. The properties of steel are different from those of iron.

11. The advice that you gave me is very important.

12. The properties of this material are the same as those of that one.

UNIT 11

SEMICONDUCTING MATERIALS

11.1 Прочитай, переведи текст GaAs MESFETs Research и заполни пропуски следующими словами: three-terminal; improved; lifetime; application; barrier gate; sub­stantial; matured; replace; regardless of; efforts; remarkable; cut-off frequency.

Many years have passed since the bipolar transistor was invented by Shockley in 1948. Bipolar technology has highly _ today, and the structure of Si bipolar transistor has been _ almost to its physical limits. The upper frequency limit of its practical _ is consid­ered to be 4 Ghz _ advances in technology.

In 1966, C. A. Mead demonstrated the possibility of transistor with a very high _ employing a GaAs field effect transistor with a Schottky _. Since then, GaAs MESFET research and development _ have been made in many laboratories around the world. The main purpose of the development of GaAs MESFET is to obtain _ microwave semiconductor devices which can be used to develop microwave amplifiers to _ the parametric low noise amplifiers and the travelling wave tube power amplifiers.

In the last several years, GaAs MESFETs have made _ progress in both low noise GaAs MESFET amplifiers, resulting in a _ reduction in the cost of microwave communication systems. High power GaAs MESFETs replaced some TWTs, guaranteeing a much long­er _ and a smaller size than the TWT.