9.2 Прочитай и письменно переведи текст the future of iCs:

When assessing the future course of ICs, it is customary to project another order of magnitude in circuit performance through a continu­ing reduction in the feature size of the devices on chip.

However, at our current level of IC development we must face several pragmatic barriers that will require some degree of research cre­ativity to overcome. For example, the chip complexity is extrapolated to 100,000,000 transistors per chip and beyond.

However, the latest models indicate that the power level of next-generation devices will be on the order of lOmW. Thus, a chip of this extrapolated complexity with these devices would require 1000 watts of input power and a packaging system capable of dissipating such pow­er. Since these small devices would operate at reduced supply voltages, the 1000 watts of input power would require currents on the order of 200 amperes and perhaps greater on a chip that should be less than one square inch in area. This set of conditions would apply only to a high-duty cycle and high-performance design and points out that important complexity/performance trade-offs must occur.

9.3 Прочитай, переведи текст integrated circuits и расположи абзацы в правильной последовательности:

1. The potential of integrated circuits is so wide that in addition to replacing similar discrete component circuits they are responsible for creating a completely new technology of circuit design.

2. There are two basic approaches to modern microelectronics — monolithic integrated circuits and film circuits.

3. In monolithic ICs all circuit elements, active and passive, are simultaneously formed in a single small wafer of silicon. The ele­ments are interconnected by metallic stripes deposited onto the oxi­dized surface of the silicon wafer.

4. Monolithic IC technology is an extension of the diffused planar process. Active elements (transistors and diodes) and passive elements (resistors and capacitors) are formed in the silicon slice by diffusing impurities into selected regions to modify electrical characteristics, and where necessary to form junctions. The various elements are designed so that all can be formed simultaneously by the same se­quence of diffusions.

5. Film circuits are made by forming the passive electronic com­ponent and metallic interconnections on the surface of an insulation substrate. Then the active semiconductor devices are added, usually in discrete wafer form. There are two types of film circuits, thin film and thick film.

6. In thin film circuits the passive components and interconnec­tion wiring are formed on glass or ceramic substrates, using evapora­tion techniques. The active components (transistors and diodes) are fabricated as separate semiconductor wafers and assembled into the circuit.

7. Thick film circuits are prepared in a similar manner except that the passive components and wiring are formed by silk-screen tech­niques on ceramic substrates.

8. There can be many instances where the microelectronic circuit may combine more than one of these approaches in a single structure, using a combination of techniques.

9. In multichip circuits the electronic components for a circuit are formed in two or more silicon wafers (chips). The chips are mounted side by side on a common header. Some interconnections are includ­ed on each chip, and the circuit is completed by wiring the chips to­gether with small diameter gold wire.

10. Hybrid IC’s are combinations of monolithic and film techniques. Active components are formed in a wafer of silicon using the pla­nar process, and the passive components and interconnection wiring pattern formed on the surface of silicon oxide which covers the wafer, using evaporation techniques.