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Исследовательская работа 2 часть 2688.doc
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Technology for manufacturing nanostructures and Si/CaF2/Si devices by the mbe method

A technology for manufacturing multi-layer Si/CaF2/Si structures and nanostructures that are new prospective materials for micro- and nanoelectronics has been developed.

  • CMOS ICs having low power consumption and high operation speed, radiation stability, integration density and reliability have been designed based on technology.

  • The use of Si/CaF2 structures made it possible to design new types of sensors of pressure, heat, air and light flows, radioactive radiation, and temperature.

  • Si/CaF2/Si-based structures are used in manufacturing microelectronic components and devices.

  • Si/CaF2/Si-based nanostructures (superlattices and quantum points) made it possible to create structures having a high luminescence level, which allows the use of these structures in manufacturing highly efficient radiation sources.

  • 3D-quantum limitation in semiconductor quantum points results in generating zero-dimensional (0D) states with discrete energy levels. The action of resonance tunneling via zero-dimensional states (single-electron states) makes it possible to design single-electron and quantum computers.

Electromechanical motor car steering booster

This electromechanical motor car steering booster has been developed by the research staff of the Automation department and the Electromechanics department in NSTU in co-operation with research engineers from the ELSIB Corporation in Novosibirsk and the Avtoelectronika Corporation in Kaluga. It is designed for the family of the VAZ-2110 motor cars. The booster is protected by RF patent № 218091.

The fundamental difference of the proposed electromechanical steering booster from similar Russian and foreign ones is the lack of a mechanical reduction gearbox, which makes it possible to simplify its design and improve operational reliability. The use of a special high-torque synchronous permanent-magnet motor designed at the NSTU Electromechanics department (RF Patent №2059994) enabled the researchers to eliminate a mechanical reduction gearbox from the kinematic scheme. This motor can produce a torque practically equal to the torque developed by a high-speed motor with a mechanical reduction gearbox used in conventional steering boosters.

The steering booster consists of an electric motor, a torque sensor to measure a torque applied to the wheel by the driver, a rotor position pickup and a control unit. The torque sensor and the rotor position pickup send signals to the control unit and it generates currents in the motor windings. These currents produce a torque that is applied directly to the booster axle. The torque value can amount to 21 N/m.

Currently the proposed electromechanical booster is being tested at the AvtoBAZ plant in Tolyatti. Large-scale manufacture of the booster is under at the ELSIB Corporation in Novosibirsk and the Avtoelectronika corporation in Kaluga.