Приложение 1. Код командного файла

set sim_left 0

set sim_right 30

set sim_bottom 5

set sim_top 0

## -----------------------------------##

## -------- LIGAMENT OUTPUT --------##

## -----------------------------------##

## ------- user defined grid ---------##

## -----------------------------------##

line x location=0.0 spacing=10<nm> tag=SiTop

line x location=3.0 spacing=100<nm>

line x location=6.0 spacing=500<nm> tag=SiBottom

line y location=0.0 spacing=1 tag=SiLeft

line y location=30.0 spacing=1 tag=SiRight

region silicon xlo=SiTop xhi=SiBottom ylo=SiLeft yhi=SiRight

init concentration=2e16 field=Boron wafer.orient=100 slice.angle=[CutLine2D 0 0 30 0.0]

mgoals on min.normal.size=3<nm> max.lateral.size=1<um> normal.growth.ratio=1.4

graphics on

## ------------------------------------

## ---- Karman -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_2 segments = {-0.1 18.5 25.5 30.1 } negative

photo mask=mask_1_2 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Phosphorus dose=4e12 energy=500 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_2 time=240 temp=1150

diffuse temp_ramp=tempramp_1_2

struct tdr=result_KARMAN

## ------------------------------------

## ---- SIP -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_3 segments = {-0.1 18.25 20.85 23.3 25.75 30.1 } negative

photo mask=mask_1_3 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Boron dose=5e13 energy=50 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_3 time=30 temp=1150

diffuse temp_ramp=tempramp_1_3

struct tdr=result_SIP

## ------------------------------------

## ---- SIN -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_4 segments = {-0.1 3.25 5.75 8.25 10.75 29.85 } negative

photo mask=mask_1_4 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Phosphorus dose=7e13 energy=50 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_4 time=45 temp=1150

diffuse temp_ramp=tempramp_1_4

struct tdr=result_SIN

## ------------------------------------

## ---- Ring -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_5 segments = {2.75 11.25 15.75 30.1 } negative

photo mask=mask_1_5 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Boron dose=1.5e15 energy=200 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_5 time=30 temp=1150

diffuse temp_ramp=tempramp_1_5

struct tdr=result_RING

## ------------------------------------

## ---- Kontakt_N -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_6 segments = {-0.1 3.625 6.375 7.625 10.375 30.1 } negative

photo mask=mask_1_6 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Phosphorus dose=7e14 energy=100 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_6 time=30 temp=1150

diffuse temp_ramp=tempramp_1_6

struct tdr=result_KONTAKT_P

## ------------------------------------

## ---- Kontakt_P -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.2

mask name=mask_1_7 segments = {-0.1 18.625 21.375 22.625 25.375 30.1 } negative

photo mask=mask_1_7 thickness=3

etch material = {Oxide} type=anisotropic rate = {0.21} time=1

implant Boron dose=5e14 energy=90 tilt=7 rot=-90

strip Photoresist

etch material = {Oxide} type=isotropic rate = {0.21} time=1

temp_ramp name=tempramp_1_7 time=10 temp=1150

diffuse temp_ramp=tempramp_1_7

struct tdr=result_KONTAKT_N

## ------------------------------------

## ---- zatvor_oxide_metall -----

## ------------------------------------

deposit material = {Oxide} type = isotropic rate = {1.0} time=0.04

graphics on

struct tdr=oxide_zatvor

deposit material = {Poly} type = isotropic Phosphorus conc=1e19 rate = {1.0} time=0.6

struct tdr=poly

deposit material = {Photoresist} type = isotropic rate = {1.0} time=1

mask name=mask_1_8 segments = {6.2 7.7 21.2 22.7 } negative

photo mask=mask_1_8 thickness=3

etch material = {Poly} type=isotropic rate = {0.6000000000000001} time=1

strip Photoresist

struct tdr=poly_and_oxide

deposit material = {Oxide} type = isotropic rate = {1.0} time=1

mask name=mask_1_9 segments = {-0.1 4.0 5.5 8.5 10.1 19.0 20.5 23.6 25.0 30.1 } negative

photo mask=mask_1_9 thickness=3

etch material = {Oxide} type=isotropic rate = {1.06} time=1

strip Photoresist

struct tdr=oxide

deposit material = {Aluminum} type = isotropic rate = {1.0} time=1

mask name=mask_1_10 segments = {0.1 6.2 7.7 11.0 18.0 21.2 22.7 27.0 } negative

photo mask=mask_1_10 thickness=3

etch material = {Aluminum} type=isotropic rate = {1} time=1

strip Photoresist

struct tdr=RESULT_Me

SetPlxList {BTotal ArsenicTotal}

WritePlx result.plx

struct smesh=n@node@

exit