Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:
Скачиваний:
0
Добавлен:
01.04.2024
Размер:
592.92 Кб
Скачать

IMS 2021 Detailed Author Index

 

[Page 81 / 148]

 

 

 

 

 

 

Marks, Robert J.

(Baylor University, USA)

A

 

 

 

585

C

A Plasma-Switch Impedance Tuner for Real-Time, Frequency-Agile, High-Power Radar

 

 

Transmitter Reconfiguration (WeIF1-32)

 

Martins, Rui P.

(University of Macau, China)

A

 

 

386

C

A 0.01-mm2 1.2-pJ/Bit 6.4-to-8Gb/s Reference-Less FD-Less BBCDR Using a

 

 

Deliberately-Clock-Selected Strobe Point Based on a 2π/3-Interval Phase (We2G-1)

Maruta, Yasushi

(NEC, Japan)

A

 

 

 

 

 

541

C

28GHz Distributed-MIMO Comprehensive Antenna Calibration for 5G Indoor Spatial

 

 

Division Multiplex (WeIF1-20)

 

 

 

 

Masotti, Diego

(Università di Bologna, Italy)

A

 

 

(MWCL)

C

Ranging On-Demand Microwave Power Transfer in Real-Time (Tu1D-5)

Masse, Chris

(Tower Semiconductor, USA) A

 

 

424

C

Switch Stacking for OFF-State Power Handling Improvements in PCM RF Switches

 

 

(We3D-2)

 

 

 

 

 

 

428

C

Multi-Throw SPNT Circuits Using Phase-Change Material RF Switches for 5G and

 

 

Millimeter Wave Applications (We3D-3)

 

Masuko, Koichiro

(Fujikura, Japan)

A

 

 

 

 

(MWCL)

C

Antenna-in-Package Integration for a Wideband Scalable 5G Millimeter-Wave

 

 

Phased-Array Module (Th3E-1)

 

 

 

Matos, Diogo

(Universidade de Aveiro, Portugal)

A

 

(MWCL)

C

Millimeter-Wave Hybrid RF-DC Converter Based on a GaAs Chip for IoT-WPT

 

 

Applications (Tu1D-4)

 

 

 

 

 

Matos, João Nuno

(Universidade de Aveiro, Portugal)

A

258

C

Barium Strontium Titanate Thick Films for Tunable Software-Defined Radio

 

 

Front-Ends (We1D-2)

 

 

 

 

 

[Search]

A B

C D E F

G H

I

J

K L

M

N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index [Page 82 / 148]

Matsumoto, Marimo (Toyohashi University of Technology, Japan) A

58 C Design of Disposable Film-Type Capacitive Wireless Charging for Implantable Medical Devices (Tu1D-2)

Matsuzaki, Hideaki (NTT, Japan) A

(MWCL) C 220–325-GHz 25-dB-Gain Di erential Amplifier with High Common-Mode-Rejection Circuit in 60-nm InP-HEMT Technology (We3F-2)

Mausolf, Thomas

(IHP, Germany) A

(MWCL)

C A 440–540-GHz Transmitter in 130-nm SiGe BiCMOS (WeIF1-5)

Mayaka, Cornelius

(Eravant, USA) A

559

C Robust Contactless Waveguide Flange for Fast Measurements (WeIF1-25)

Men, Kai

(SUTD, Singapore) A

850

C A 60GHz Edge-Coupled 4-Way Balun Power Amplifier with 22.7dBm Output Power

 

and 27.7% Peak E ciency (Th3C-4)

Mencarelli, Davide

(Università Politecnica delle Marche, Italy) A

315

C Microwave Detection Using 2-Atom-Thick Heterojunction Diodes (We1G-5)

Meng, Chinchun

(National Chiao Tung University, Taiwan) A

599

C 60-GHz Microstrip pHEMT Subharmonic Down-/Up-Converters with an Extended

 

CPWG RF Section for Flip-Chip Optimization (WeIF1-36)

Mezzanotte, Paolo

(Università di Perugia, Italy) A

82

C Ultra-Low-Cost Passive 3D-Printed Vibration Transducers for Condition Monitoring by

 

Means of Wireless Chipless Transponders (Tu2B-1)

823

C A Wireless MEMS Humidity Sensor Based on a Paper-Aluminium Bimorph Cantilever

 

(Th2E-4)

Mghabghab, Serge

(Michigan State University, USA) A

549

C Passive Non-Cooperative Millimeter-Wave Imaging Using 5G Signals of Opportunity

 

(WeIF1-22)

[Search]

A B

C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index [Page 83 / 148]

Mieczkowska, D.

 

(QWED, Poland) A

229

C

Quantitative Error Metrics and Test Patterns for Enhanced Dielectric Resonator

 

 

Imaging of Microwave Materials (Tu4D-4)

Miek, Daniel

(CAU, Germany) A

200

C

Dual-Mode WR-3 Waveguide Filter with E-Plane Cut (Tu4B-5)

499

C

Triple-Mode Bandpass Filter Based on TM Dielectric Rod Resonators (WeIF1-9)

Miri Lavasani, Hossein

(Case Western Reserve University, USA) A

382

C

A V-Band Doubly Hybrid NMOS/PMOS Four-Way Distributed-Active-Transformer

 

 

Power Amplifier for Nonlinearity Cancellation and Joint Linearity/E ciency

 

 

Optimization (We2F-4)

Mishra, Umesh K.

(University of California, Santa Barbara, USA) A

(MWCL)

C

6.2W/mm and Record 33.8% PAE at 94GHz from N-Polar GaN Deep Recess MIS-HEMTs

 

 

with ALD Ru Gates (We2F-3)

Mitran, Patrick

 

(University of Waterloo, Canada) A

(MWCL)

C

Investigation of the Impact of Zero-Forcing Precoding on the Variation of Massive

 

 

MIMO Transmitters’ Performance with Channel Conditions (Th1A-1)

Miura, Satoshi

 

(THine Electronics, Japan) A

705

C

A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

 

 

Systems (Th1B-1)

Miyamoto, Takashi

(Kyushu University, Japan) A

54

C

E cient and Compact Dual-Band Wireless Power Transfer System Through Biological

 

 

Tissues Using Dual-Reference DGS Resonators (Tu1D-1)

Miyawaki, Katsumi

(Mitsubishi Electric, Japan) A

835

C

An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Mizrahi, Oren S.

(Caltech, USA) A

31

C

Flexible Phased Array Shape Reconstruction (Tu1B-4)

[Search]

A

B

C

D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 84 / 148]

 

 

Modak, Nirmoy

(Purdue University, USA) A

116

C Channel Modeling for Physically Secure Electro-Quasistatic In-Body to Out-of-Body

 

Communication with Galvanic Tx and Multimodal Rx (Tu2D-4)

Mohammadpour, Amin (Università di Pavia, Italy) A

(MWCL)

C A 140-μW Front-End with 5.7-dB NF and +10-dBm OOB-IIP3 Using Voltage-Mode

 

Boosting Mixer (WeIF1-54)

 

Mokhti, Z.

(Wolfspeed, USA) A

 

531

C Investigation on a Desirable DPD Architecture and Trapping Characteristics for GaN

 

Power Amplifier Linearization (WeIF1-17)

Monteiro, P.P.

(Universidade de Aveiro, Portugal) A

861

C Sub-6GHz Multi-Band Multi-Carrier Remote Unit Based on RFSoC (Th3D-3)

Moradinia, Arya

(Georgia Tech, USA)

A

842

C A 2–24GHz SiGe HBT Cascode Non-Uniform Distributed Power Amplifier Using A

 

Compact, Wideband Two-Section Lumped Element Output Impedance Transformer

 

(Th3C-2)

 

Moreno, G.

(Akoustis, USA) A

 

207

C Wideband 6GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly

 

Sc-Doped AlN Thin Film (Tu4C-1)

Moritani, Motoki (Tokyo Tech, Japan)

A

799

C A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

 

Communication (Th2D-2)

 

Morris, Kevin

(University of Bristol, UK)

A

442

C An RF Power Amplifier Behavioural Model with Low-Complexity Temperature

 

Feedback for Transmitter Arrays (We3E-3)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 85 / 148]

 

 

Mortazawi, Amir

(University of Michigan, USA) A

214

C

Physics Based Modeling of Electrostriction Based BAW Resonators (Tu4C-3)

(MWCL)

C

A Switchless Quad Band Filter Bank Based on Ferroelectric BST FBARs (We1D-1)

Moss, Robert

(OEwaves, USA) A

 

538

C

Ultra-Wideband Photonic VCO and Synthesizer (WeIF1-19)

Mu, Q.

(Wolfspeed, USA)

A

 

531

C

Investigation on a Desirable DPD Architecture and Trapping Characteristics for GaN

 

 

Power Amplifier Linearization (WeIF1-17)

Mueh, Mario

(Universität Ulm, Germany)

A

(MWCL)

C

Calibration Technique for THz Time-Domain Spectrometers Enabling Vectorial

 

 

Scattering Parameter Measurements (We3B-1)

Mukhopadhyay, Saibal

(Georgia Tech, USA) A

74

C

E cient On-Chip Acceleration of Machine Learning Models for Detection of RF Signal

 

 

Modulation (Tu2A-4)

 

Munzer, David

 

(Georgia Tech, USA) A

 

(MWCL)

C

A Single-Ended Coupler-Based VSWR Resilient Joint mm-Wave True Power Detector

 

 

and Impedance Sensor (WeIF1-53)

Murai, Kousuke

(Toyohashi University of Technology, Japan) A

58

C

Design of Disposable Film-Type Capacitive Wireless Charging for Implantable Medical

 

 

Devices (Tu1D-2)

 

Muroi, Koichi

(Mitsubishi Electric, Japan)

A

835

C

An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index [Page 86 / 148]

N

Na, Yoosam

(Samsung, Korea) A

721

C

A 5G mm-Wave Single Chip 8-Channel FEM with Best-in-Class 22% Power E ciency

 

 

and Embedded Die Substrate (EDS) Technology (Th1B-5)

Na, Yunsik

(Sungkyunkwan University, Korea) A

378

C

A 200GHz InP HBT Direct-Conversion LO-Phase-Shifted Transmitter/Receiver with

 

 

15dBm Output Power (We2F-2)

Nagamine, Takumi

(Mitsubishi Electric, Japan) A

835

C

An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Nagatani, Munehiko

(NTT, Japan) A

(MWCL)

C

An Over 67-GHz Bandwidth 21-dB Gain 4.5-Vppd Linear Modulator Driver for 100-GBd

 

 

Coherent Optical Transmitter (We2G-2)

Naghavi, S.M.H. (University of Michigan, USA) A

752

C

Broadband Sub-THz Chirp Linearization Using Particle Swarm Optimization for

 

 

Precision Metrology Applications (Th1D-4)

Nahler, Achim

(National Instruments, Germany) A

693

C

USRP-Based mmWave Prototyping Architecture with Real-Time RF Control (Th1A-2)

Nakhla, Michel

(Carleton University, Canada) A

241

C

Multilevel Parameterized Model Order Reduction for Variability Analysis of Circuits

 

 

(We1B-4)

 

Nam, Suhyun

(University of Michigan, USA) A

214

C

Physics Based Modeling of Electrostriction Based BAW Resonators (Tu4C-3)

(MWCL)

C

A Switchless Quad Band Filter Bank Based on Ferroelectric BST FBARs (We1D-1)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 87 / 148]

 

 

Nanzer, Je rey A. (Michigan State University, USA)

A

549

C

Passive Non-Cooperative Millimeter-Wave Imaging Using 5G Signals of Opportunity

 

 

(WeIF1-22)

 

 

 

748

C

A Millimeter-Wave Dynamic Antenna Array for Classifying Objects via Sparse Fourier

 

 

Domain Sampling (Th1D-2)

 

 

 

Nath, Mayukh

(Purdue University, USA)

A

 

 

(MWCL)

C

A Multipole Approach Toward On-Chip Metal Routing for Reduced EM Side-Channel

 

 

Leakage (Tu2D-3)

 

 

 

116

C

Channel Modeling for Physically Secure Electro-Quasistatic In-Body to Out-of-Body

 

 

Communication with Galvanic Tx and Multimodal Rx (Tu2D-4)

Nauroze, Syed A.

(Georgia Tech, USA)

A

 

 

86

C

A Novel Additively 4D Printed Origami-Inspired Tunable Multi-Layer Frequency

 

 

Selective Surface for mm-Wave IoT, RFID, WSN, 5G, and Smart City Applications

 

 

(Tu2B-2)

 

 

 

Negra, Renato

(RWTH Aachen University, Germany)

A

(MWCL)

C

Voltage-Tunable Thin Film Graphene-Diode-Based Microwave Harmonic Generator

 

 

(We3C-1)

 

 

 

519

C

3D Integrated 300C Tunable RF Oscillator Exploiting AlGaN/GaN HEMT for High

 

 

Temperature Applications (WeIF1-14)

 

595

C

Low-Cost Compact Analogue Phase-Shifter Based on CVD Graphene-Diode for Smart

 

 

Surfaces Applications (WeIF1-35)

 

 

888

C

Compact V-Band MMIC Square-Law Power Detector with 70dB Dynamic Range

 

 

Exploiting State-of-the-Art Graphene Diodes (Th3F-2)

Nguyen, Khanh

(Northrop Grumman, USA)

A

 

196

C

Narrow-Band Band-Pass Filters for Terahertz Applications (Tu4B-4)

[Search]

A B

C D E F G H I

J

K L M

N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 88 / 148]

 

 

 

Nguyen, Minh Q.

 

(Johannes Kepler Universität Linz, Austria) A

756

C High Angular Resolution Digital Beamforming Method for Coherent FMCW MIMO

 

Radar Networks (Th1D-5)

 

Nguyen, Nhu-Huan

(IMEP-LAHC (UMR 5130), France) A

335

C Half-Mode Slab Air-Filled Substrate Integrated Waveguide (SAFSIW) (We2C-1)

Nicholls, Charles

(Nanowave Technologies, Canada) A

842

C A 2–24GHz SiGe HBT Cascode Non-Uniform Distributed Power Amplifier Using A

 

Compact, Wideband Two-Section Lumped Element Output Impedance Transformer

 

(Th3C-2)

 

 

Nichols, Doyle

(Northrop Grumman, USA) A

431

C Wideband SPDT and SP4T RF Switches Using Phase-Change Material in a SiGe BiCMOS

 

Process (We3D-4)

 

Nie, Hui

(Zhejiang University, China) A

 

503

C A CMOS 1.3–1.7GHz Q-Enhanced LC Band-Pass RF Filter with 1.5–67% Tunable

 

Fractional Bandwidth (WeIF1-10)

Niknejad, Ali M.

 

(University of California, Berkeley, USA) A

(MWCL)

C An Ultrasensitive 14-GHz 1.12-mW EPR Spectrometer in 28-nm CMOS (We2E-1)

Nilchi, J.

(Broadcom, USA) A

 

(MWCL)

C Novel Temperature-Compensated, Silicon SAW Design for Filter Integration (Tu4C-5)

Nitzold, Walter

 

(National Instruments, Germany) A

693

C USRP-Based mmWave Prototyping Architecture with Real-Time RF Control (Th1A-2)

Noferesti, Moein

 

(INRS-EMT, Canada)

A

496

C A Wide-Band 90 Degree HMSIW Schi man Phase-Shifter for 28GHz Millimeter-Wave

 

Applications (WeIF1-8)

 

[Search]

A

B

C

D E F G H I

J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 89 / 148]

 

 

Noguchi, Yuuma

(Murata Manufacturing, Japan) A

523

C

Parallel Plate Coupler Based Doherty Power Amplifier Design for 5G NR Handset

 

 

Applications (WeIF1-15)

Nomoto, Kazuki

(Cornell University, USA) A

669

C

SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits

 

 

Above 110GHz (WeIF1-58)

Norman, Adam

(Intel, USA) A

 

184

C

IMS Fast Method for Large-Scale Signaling Analysis of Nonlinear Circuits Including

 

 

Worst-Case Eye and Bit Error Rate Analysis (Tu4A-4)

Nosaka, Hideyuki

(NTT, Japan)

A

(MWCL)

C

An Over 67-GHz Bandwidth 21-dB Gain 4.5-Vppd Linear Modulator Driver for 100-GBd

 

 

Coherent Optical Transmitter (We2G-2)

(MWCL)

C

220–325-GHz 25-dB-Gain Di erential Amplifier with High Common-Mode-Rejection

 

 

Circuit in 60-nm InP-HEMT Technology (We3F-2)

Nouri, Soheil

(University of Arkansas, USA) A

352

C

Impact of Wave Propagations on Figures of Merit in Millimeter-Wave Transistors

 

 

(We2D-2)

 

Nunes, Luis C.

(Universidade de Aveiro, Portugal) A

740

C

Load Insensitive Doherty PA Using Load Dependent Supply Voltages (Th1C-5)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index [Page 90 / 148]

O

Oberhammer, J.

(KTH, Sweden) A

204

C

Micromachined Bandpass Filters with Enhanced Stopband Performance and Q-Factor

 

 

of 950 at 700GHz (Tu4B-6)

Ogiso, Yoshihiro

(NTT, Japan) A

(MWCL)

C

An Over 67-GHz Bandwidth 21-dB Gain 4.5-Vppd Linear Modulator Driver for 100-GBd

 

 

Coherent Optical Transmitter (We2G-2)

Oh, Hansik

 

(Sungkyunkwan University, Korea) A

649

C

Hybrid ET Supply Modulator IC with an Adaptive Quiescent Current Controller for its

 

 

Linear Amplifier (WeIF1-51)

Oh, Yongduk

(North Carolina State University, USA) A

556

C

Implementation of a Flat-Bottom Luneburg Lens Based on Conformal Transformation

 

 

Optics (WeIF1-24)

Ohira, Masataka

(Saitama University, Japan) A

(MWCL)

C

A Novel Deep-Q-Network-Based Fine-Tuning Approach for Planar Bandpass Filter

 

 

Design (Tu2A-1)

Okabe, Hiroshi (Murata Manufacturing, Japan) A

523 C Parallel Plate Coupler Based Doherty Power Amplifier Design for 5G NR Handset Applications (WeIF1-15)

791 C A Bandwidth-Optimized Transformer-Based Doherty Power Amplifier for 5G Power Class 2 Handset Operation at 2.2GHz–2.7GHz (Th2C-4)

Okada, Kenichi (Tokyo Tech, Japan) A

799 C A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite Communication (Th2D-2)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z