диафрагмированные волноводные фильтры / 72230e1b-a784-4f98-b036-71d1da262411

IMS 2021 Detailed Author Index

[Page 111 / 148]

Shi, Yu

(University of Notre Dame, USA)

A

717

C Photo-Induced Coded-Aperture Imaging at 740GHz Using Mesa Arrays for Achieving

Subwavelength Resolution (Th1B-4)

Shibata, Hironobu (Mitsubishi Electric, Japan) A

835

C An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Shih, Hung-Tse

(NYCU, Taiwan) A

(MWCL)

C 5G Millimeter-Wave Substrate-Integrated Waveguide Quad-Channel Diplexer with

High In-Band and Wideband Isolation (Tu1C-1)

Shin, Jaekyung

(Sungkyunkwan University, Korea) A

649

C Hybrid ET Supply Modulator IC with an Adaptive Quiescent Current Controller for its

Linear Amplifier (WeIF1-51)

Shirane, Atsushi

(Tokyo Tech, Japan)

A

799

C A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

Shivan, T. (FBH, Germany) A

290

C High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for

Ultra Capacity Wireless Applications (We1F-2)

(MWCL)

C A Highly Linear Dual-Stage Amplifier with Beyond 1.75-THz Gain-Bandwidth Product

(Th1E-1)

Shrestha, Pawana

(University of California, Santa Barbara, USA) A

(MWCL)

C 6.2W/mm and Record 33.8% PAE at 94GHz from N-Polar GaN Deep Recess MIS-HEMTs

with ALD Ru Gates (We2F-3)

Shu, Yonghui (Eravant, USA) A

559

C Robust Contactless Waveguide Flange for Fast Measurements (WeIF1-25)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 112 / 148]

Sideris, Constantine

(University of Southern California, USA)

A

128

C

High-Order Accurate Integral Equation Based Mode Solver for Layered Nanophotonic

Waveguides (Tu3A-3)

Sieganschin, Anton

(Technische Universität Hamburg-Harburg, Germany)

A

(MWCL)

C

A Compact K-/Ka-Band Rectangular-to-Coplanar Waveguide Transition with

Integrated Diplexer (We1C-5)

489

C

A Compact SIW K-/Ka-Band Diplexer with Integrated Reactive Power Divider (WeIF1-6)

Sielck, Noah

(Technische Universität Hamburg-Harburg, Germany)

A

489

C

A Compact SIW K-/Ka-Band Diplexer with Integrated Reactive Power Divider (WeIF1-6)

Silvestri, Lorenzo

(Università di Pavia, Italy)

A

400

C

Microwave-Microfluidic Sensor in Hybrid 3-D Printing and Laminate Technology for

Chemicals Monitoring from Di erential Reflection (We3B-3)

Simoncini, G.

(Università di Perugia, Italy)

A

823

C

A Wireless MEMS Humidity Sensor Based on a Paper-Aluminium Bimorph Cantilever

(Th2E-4)

Simpson, Dakotah

(University of Colorado Boulder, USA)

A

158

C

Hybridly-Integrated Quasi-Elliptic-Type Bandpass Filters with Symmetrical

Quasi-Reflectionless Characteristics (Tu3C-5)

Simsek, Arda

(University of California, Santa Barbara, USA)

A

713

C

A Packaged 135GHz 22nm FD-SOI Transmitter on an LTCC Carrier (Th1B-3)

Singh, Tejinder

(University of Waterloo, Canada)

A

420

C

Scalable Non-Volatile Chalcogenide Phase Change GeTe-Based Monolithically

Integrated mmWave Crossbar Switch Matrix (We3D-1)

Siriburanon, Teerachot

(University College Dublin, Ireland)

A

635

C

Cryogenic Low-Drop-Out Regulators Fully Integrated with Quantum Dot Array in

22-nm FD-SOI CMOS (WeIF1-46)

[Search]

A B

C

D

E F G

H I J

K

L

M N

O

P

Q

R S

T U V W X Y Z

Sivanesan, Kathiravetpillai

(Intel, USA)

A

108

C

High Accuracy RF-PUF for EM Security Through Physical Feature Assistance Using

Public Wi-Fi Dataset (Tu2D-1)

Slovin, Greg (Tower Semiconductor, USA)

A

424

C

Switch Stacking for OFF-State Power Handling Improvements in PCM RF Switches

(We3D-2)

428

C

Multi-Throw SPNT Circuits Using Phase-Change Material RF Switches for 5G and

Millimeter Wave Applications (We3D-3)

431

C

Wideband SPDT and SP4T RF Switches Using Phase-Change Material in a SiGe BiCMOS

Process (We3D-4)

Smith, Connor

(University of Florida, USA)

A

323

C

Batch-Fabricated Substrate-Embedded Ka Band Self-Biased Circulators Using

Screen-Printed Strontium Hexaferrite/PDMS Composite (We2B-1)

Song, Ho-Jin

(POSTECH, Korea)

A

142

C

THz-Wave Waveguide Packaging with Multiple THz On-Chip Transitions Integrated in

Single Chip (Tu3B-5)

Song, P.

(Wolfspeed, USA)

A

531

C

Investigation on a Desirable DPD Architecture and Trapping Characteristics for GaN

Power Amplifier Linearization (WeIF1-17)

Sorocki, Jakub

(AGH UST, Poland)

A

400

C

Microwave-Microfluidic Sensor in Hybrid 3-D Printing and Laminate Technology for

Chemicals Monitoring from Di erential Reflection (We3B-3)

Sow, Ousmane

(X-FAB, France)

A

20

C

5.9–7.1GHz High-Linearity LNA Using Innovative 3D Device Level Co-Integration of

GaN HEMT and RF-SOI (Tu1B-1)

[Search]

A B C D

E

F

G

H I J

K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 114 / 148]

Soylu, Utku

(University of California, Santa Barbara, USA) A

378

C

A 200GHz InP HBT Direct-Conversion LO-Phase-Shifted Transmitter/Receiver with

15dBm Output Power (We2F-2)

787

C

A 190–210GHz Power Amplifier with 17.7–18.5dBm Output Power and 6.9–8.5% PAE

(Th2C-2)

Sriperumbuduri, Venkata Pawan

(BTU, Germany) A

355

C

Modeling Base-Collector Heterojunction Barrier E ect in InP DHBTs for Improved

Large Signal Performance (We2D-3)

Stadius, Kari

(Aalto University, Finland) A

784

C

Characterization of an Antenna Cluster and Transmitter IC with a Modulated Signal

(Th2A-5)

Stadler, Bethanie

(University of Minnesota, USA) A

(MWCL)

C

Study of Nanowire-Based Integrated via Technology for CMOS Application in

Millimeter-Wave Frequencies (Tu3B-4)

Staszewski, R. Bogdan

(Equal1 Labs, Ireland) A

635

C

Cryogenic Low-Drop-Out Regulators Fully Integrated with Quantum Dot Array in

22-nm FD-SOI CMOS (WeIF1-46)

Stelzer, Andreas

(Johannes Kepler Universität Linz, Austria) A

756

C

High Angular Resolution Digital Beamforming Method for Coherent FMCW MIMO

Radar Networks (Th1D-5)

Sterzl, Georg

(Universität Stuttgart, Germany) A

(MWCL)

C

Subnanoliter Sensing of Dielectric Properties of Liquid-in-Flow at 190GHz (Tu4D-1)

Su, Huan-Min

(National Tsing Hua University, Taiwan) A

393

C

A 64-Gbaud Transimpedance Amplifier in 130nm SiGe Technology with E ective

Broadband Techniques (We2G-4)

[Search]

A B

C D

E F G

H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 115 / 148]

Su, Wei

(CAEP, China) A

566

C A High E ciency D-Band 32-Channel Radial Waveguide Power Divider/Combiner

(WeIF1-27)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Tabrizian, Roozbeh

(University of Florida, USA)

A

(MWCL)

C

Ferroelectric-on-Si Super-High-Frequency Fin Bulk Acoustic Resonators with

Tahar, Fairus

Hf0.5Zr0.5O2 Nanolaminated Transducers (WeIF1-61)

(Kyushu University, Japan)

A

54

C

E cient and Compact Dual-Band Wireless Power Transfer System Through Biological

Tissues Using Dual-Reference DGS Resonators (Tu1D-1)

Takahashi, Hiroyuki

(NTT, Japan)

A

(MWCL)

C

220–325-GHz 25-dB-Gain Di erential Amplifier with High Common-Mode-Rejection

Circuit in 60-nm InP-HEMT Technology (We3F-2)

Takahashi, Yuta

(Tokyo Tech, Japan)

A

799

C

A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

Takano, Kohei

(Saitama University, Japan)

A

(MWCL)

C

A Novel Deep-Q-Network-Based Fine-Tuning Approach for Planar Bandpass Filter

Design (Tu2A-1)

Takano, Kyoya

(Tokyo University of Science, Japan)

A

705

C

A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

Takeda, Shinji

(Tokyo Tech, Japan)

A

799

C

A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

Takenaka, Kiichiro

(Murata Manufacturing, Japan)

A

523

C

Parallel Plate Coupler Based Doherty Power Amplifier Design for 5G NR Handset

Applications (WeIF1-15)

[Search]

A

B C

D E F G

H

I

J

K L

M

N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 117 / 148]

Takenouchi, Yoshimitsu

(Murata Manufacturing, Japan)

A

523

C

Parallel Plate Coupler Based Doherty Power Amplifier Design for 5G NR Handset

Applications (WeIF1-15)

Tamiazzo, Stefano

(CommScope, Italy)

A

(MWCL)

C

A True Inline Coaxial-Cavity Filter with Two Symmetric Zeros (Tu3C-1)

Tamura, Masaya

(Toyohashi University of Technology, Japan)

A

58

C

Design of Disposable Film-Type Capacitive Wireless Charging for Implantable Medical

Devices (Tu1D-2)

Tanaka, Satoshi

(Murata Manufacturing, Japan)

A

791

C

A Bandwidth-Optimized Transformer-Based Doherty Power Amplifier for 5G Power

Class 2 Handset Operation at 2.2GHz–2.7GHz (Th2C-4)

Tang, A.

(Jet Propulsion Laboratory, USA)

A

(MWCL)

C

A 0.1–4.0-GHz Inductorless Direct-Sequence Spread-Spectrum-Based

Ground-Penetrating Radar System-on-Chip (Th1D-3)

811

C

Surface Cancellation in Wideband Ground Penetrating Radar Employing Genetic

Algorithm AI for Waveform Synthesis (Th2E-1)

Tang, Youxi

(UESTC, China)

A

446

C

A High-Accuracy Digital Predistorter Constructed by Reproducing Iterations of ILC

with Cascade Architecture (We3E-5)

614

C

An Out-of-Band Digital Predistortion Scheme and its Verification for Power Amplifiers

with Strong Nonlinearity (WeIF1-40)

Tanoi, Satoru

(NICT, Japan)

A

458

C

A 213–233GHz ×9 Frequency Multiplier Chain with 4.1dBm Output Power in 40nm

Bulk CMOS (We3F-5)

705

C

A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

[Search]

A

B

C D

E

F G H I

J K L

M N

O

P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 118 / 148]

Tao, Han-Yu

(University of Virginia, USA) A

665

C

Terahertz Input-Reflectionless Waveguide Filter (WeIF1-57)

Tao, Ye

(Carleton University, Canada)

A

241

C

Multilevel Parameterized Model Order Reduction for Variability Analysis of Circuits

(We1B-4)

Tarar, Mohsin

(Universität Ulm, Germany) A

23

C

A -115dBc/Hz Integrated Optoelectronic Oscillator in a BiCMOS Silicon Photonic

Technology (Tu1B-2)

Taravati, Sajjad

(University of Toronto, Canada) A

412

C

Experimental Demonstration of Enhanced E ciency Non-Magnetic Time-Modulated

Circulator (We3C-3)

416

C

Lightweight Low-Profile Highly-E cient Magnetless Isolator Comprising Two

Time-Modulated Loops (We3C-4)

Tarui, Yukinobu

(Mitsubishi Electric, Japan) A

835

C

An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Tavakoli Taba, M.

(University of Michigan, USA) A

752

C

Broadband Sub-THz Chirp Linearization Using Particle Swarm Optimization for

Precision Metrology Applications (Th1D-4)

Tawa, Noriaki

(NEC, Japan) A

541

C

28GHz Distributed-MIMO Comprehensive Antenna Calibration for 5G Indoor Spatial

Division Multiplex (WeIF1-20)

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Tentzeris, Manos M.

(Georgia Tech, USA)

A

82

C

Ultra-Low-Cost Passive 3D-Printed Vibration Transducers for Condition Monitoring by

Means of Wireless Chipless Transponders (Tu2B-1)

86

C

A Novel Additively 4D Printed Origami-Inspired Tunable Multi-Layer Frequency

Selective Surface for mm-Wave IoT, RFID, WSN, 5G, and Smart City Applications

(Tu2B-2)

(MWCL)

C

5.8-GHz Low-Power Tunnel-Diode-Based Two-Way Repeater for Non-Line-of-Sight

Interrogation of RFIDs and Wireless Sensor Networks (We1E-2)

327

C

In-Package Additively Manufactured Sensors for Bend Prediction and Calibration of

Flexible Phased Arrays and Flexible Hybrid Electronics (We2B-2)

661

C

A Machine Learning Approach-Based Chipless RFID System for Robust Detection in

Real-World Implementations (WeIF1-56)

Terranova, S.

(Università di Pisa, Italy)

A

90

C

3D Printed Chipless Tag Based on Spectral Encoding Scheme (Tu2B-3)

Thangarasu, Bharatha Kumar

(SUTD, Singapore)

A

709

C

A 24.6–32.5GHz Millimeter-Wave Frequency Synthesizer for 5G Wireless and 60GHz

Applications (Th1B-2)

Tharpe, Troy

(University of Florida, USA)

A

(MWCL)

C

Ferroelectric-on-Si Super-High-Frequency Fin Bulk Acoustic Resonators with

Hf0.5Zr0.5O2 Nanolaminated Transducers (WeIF1-61)

Thayyil, Manu Viswambharan (Technische Universität Dresden, Germany)

A

286

C

A 60GHz Folded Switching Stage Down-Conversion Mixer with 21dB Conversion Gain

in 22nm FDSOI Technology (We1F-1)

Thome, Fabian

(Fraunhofer IAF, Germany)

A

(MWCL)

C

A 75–305-GHz Power Amplifier MMIC with 10–14.9-dBm Pout in a 35-nm InGaAs

mHEMT Technology (We3F-1)

[Search]

A

B C

D E F

G H

I

J

K L M

N O P Q R S T

U V W X Y Z

Thorsell, Mattias

(Saab, Sweden)

A

(MWCL)

C

Instinctual Interference-Adaptive Low-Power Receiver with Combined Feedforward

and Feedback Control (We3G-1)

Tien, Chao-Jen

(NYCU, Taiwan)

A

768

C

A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5–62.5-GHz Low Noise Amplifier in

28-nm Bulk CMOS (Th1F-3)

Tkach, Alexander

(Universidade de Aveiro, Portugal)

A

258

C

Barium Strontium Titanate Thick Films for Tunable Software-Defined Radio

Front-Ends (We1D-2)

Tolani, Harshita

(ISRO, India)

A

827

C

Hermetically Sealed S-Band LTCC Based Transmit/Receive Module with Integrated

Self-Calibration Circuitry for Space-Borne SAR (Th2F-1)

Tomassoni, Cristiano

(Università di Perugia, Italy)

A

150

C

Spurious Suppression Through the Control of Their Couplings: Application to TM

Cavity Filters (Tu3C-3)

(MWCL)

C

3-D-Printed Dual-Mode Filter Using an Ellipsoidal Cavity with Asymmetric Responses

(Tu4B-1)

Tong, Zikang

(Stanford University, USA)

A

725

C

Wideband Class Φ2 Power Amplifier for HF Applications (Th1C-1)

Traore, Emile

(University of Waterloo, Canada)

A

869

C

Experimental Study of the E ects of Antenna Crosstalk on the Linearity and E ciency

of 5G Sub-6GHz Wideband 2×2 Transmitter Arrays (Th3E-2)

Trinchero, Riccardo

(Politecnico di Torino, Italy)

A

13

C

Compressed Machine Learning-Based Inverse Model for the Design of Microwave

Filters (Tu1A-4)

[Search]

A

B

C

D E F

G

H I

J K

L

M

N O P Q R S T U V W X Y Z