диафрагмированные волноводные фильтры / 72230e1b-a784-4f98-b036-71d1da262411

IMS 2021 Detailed Author Index

[Page 131 / 148]

Wessel, Jan

(IHP, Germany) A

(MWCL)

C A 440–540-GHz Transmitter in 130-nm SiGe BiCMOS (WeIF1-5)

Wietstruck, Matthias

(IHP, Germany)

A

319

C High-Frequency Tellurene MOSFETs with Biased Contacts (We1G-6)

Williams, Sam

(Bangor University, UK)

A

625

C Integration of 5.8GHz Doppler Radar and Machine Learning for Automated Honeybee

Hive Surveillance and Logging (WeIF1-43)

Winters, M.

(Akoustis, USA) A

207

C Wideband 6GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly

Sc-Doped AlN Thin Film (Tu4C-1)

Włódarkiewicz, Anna

(Universidade de Aveiro, Portugal) A

258

C Barium Strontium Titanate Thick Films for Tunable Software-Defined Radio

Front-Ends (We1D-2)

Wong, Sai-Wai

(Shenzhen University, China) A

254

C Four-Way Filtering Crossover Based on Quadruple-Mode Cavity Resonator (We1C-4)

Woo, Jongseok

(Georgia Tech, USA) A

74

C E cient On-Chip Acceleration of Machine Learning Models for Detection of RF Signal

Modulation (Tu2A-4)

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IMS 2021 Detailed Author Index

[Page 132 / 148]

Wu, Chung-Tse Michael

(Rutgers University, USA)

A

(MWCL)

C A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated

Passive Device (We1C-1)

362

C Non-Contact Fingertip Microwave Plethysmography Based on Near-Field Sensing with

Super-Regenerative Oscillator (We2E-2)

408

C A Distributed Mixer-Based Nonreciprocal CRLH Leaky Wave Antenna for

Simultaneous Transmit and Receive (We3C-2)

681

C Active MMIC Transversal Filter-Based Negative Group Delay/Non-Foster Circuit in

0.1-μm GaAs pHEMT Technology (WeIF1-62)

Wu, Haoyang

(Intel, China)

A

466

C A Scalable Gesture Interaction System Based on mm-Wave Radar (We3G-3)

Wu, Ke (Polytechnique Montréal, Canada)

A

335

C Half-Mode Slab Air-Filled Substrate Integrated Waveguide (SAFSIW) (We2C-1)

685

C Multichannel Substrate Integrated Waveguide Diplexer Made of Dual-Mode Cavities

and Split-Type Dual-Band Response (WeIF1-63)

Wu, Lucy

(University of Toronto, Canada)

A

(MWCL)

C A DC to 220-GHz High-Isolation SPST Switch in 22-nm FDSOI CMOS (Th1E-2)

Wu, Ming-Zheng

(National Tsing Hua University, Taiwan)

A

393

C A 64-Gbaud Transimpedance Amplifier in 130nm SiGe Technology with E ective

Broadband Techniques (We2G-4)

Wu, Qiuyi

(Xidian University, China)

A

154

C Expanding the Working Bandwidth of the Manifold Coupled Multiplexers (Tu3C-4)

Wu, Ryan

(NXP Semiconductors, USA)

A

342

C Stripline-Based W-Band Frequency Scanning Composite Right/Left-Handed

Leaky-Wave Antenna with a Tapered Aperture for Narrow Beamwidth (We2C-3)

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IMS 2021 Detailed Author Index

[Page 133 / 148]

Wu, Wenzhuo

(Purdue University, USA)

A

319

C

High-Frequency Tellurene MOSFETs with Biased Contacts (We1G-6)

Wurm, Christian (University of California, Santa Barbara, USA) A

(MWCL)

C

6.2W/mm and Record 33.8% PAE at 94GHz from N-Polar GaN Deep Recess MIS-HEMTs

with ALD Ru Gates (We2F-3)

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A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Xia, Jingjing

(University of Waterloo, Canada) A

297

C

A 60GHz CMOS-SOI Stacked Push-Push Frequency Doubler with 12dBm Output Power

and 20% E ciency (We1F-4)

869

C

Experimental Study of the E ects of Antenna Crosstalk on the Linearity and E ciency

of 5G Sub-6GHz Wideband 2×2 Transmitter Arrays (Th3E-2)

(MWCL)

C

Uniformly Distributed Near-Field Probing Array for Enhancing the Performance of 5G

Millimeter-Wave Beamforming Transmitters (Th3E-4)

Xia, Xiangjie

(UESTC, China) A

446

C

A High-Accuracy Digital Predistorter Constructed by Reproducing Iterations of ILC

with Cascade Architecture (We3E-5)

614

C

An Out-of-Band Digital Predistortion Scheme and its Verification for Power Amplifiers

with Strong Nonlinearity (WeIF1-40)

Xie, Andy

(Qorvo, USA) A

772

C

A Baseband-65GHz High Linearity-Bandwidth GaN LNA Using a 1.7A/mm High

Current Density ScAlN Based GaN HEMT Technology (Th1F-4)

Xing, Huili Grace

(Cornell University, USA) A

669

C

SiC Substrate-Integrated Waveguides for High-Power Monolithic Integrated Circuits

Above 110GHz (WeIF1-58)

Xiong, Kuanchen

(Cornell University, USA) A

319

C

High-Frequency Tellurene MOSFETs with Biased Contacts (We1G-6)

Xu, Hongtao

(Fudan University, China) A

831

C

A CMOS 65nm 8–15GHz T/R with Multiple Compensation Techniques (Th2F-2)

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IMS 2021 Detailed Author Index

[Page 135 / 148]

Xu, Kevin

(SUNY Bu alo, USA) A

622

C Frequency Scanning Reflectarray Based on Composite Right/Left-Handed

Transmission Lines (WeIF1-42)

Xu, Ruimin

(UESTC, China) A

104

C Miniaturized Reconfigurable Filtering Power Divider with Arbitrary Output Phase

Di erence and Improved Isolation (Tu2C-4)

Xu, Wei

(Shanghai Jiao Tong University, China) A

282

C Deep Sub-Wavelength Millimeter-Wave Radar Interferometry with a Novel Ego-Motion

Based Calibration Technique (We1E-5)

Xu, Wei

(UESTC, China) A

46

C Design of 5G SISL BPFs Using Di erential Inductor-Based Resonators (Tu1C-4)

Xu, Zhiwei

(Zhejiang University, China)

A

503

C A CMOS 1.3–1.7GHz Q-Enhanced LC Band-Pass RF Filter with 1.5–67% Tunable

Fractional Bandwidth (WeIF1-10)

Xue, Hao

(UESTC, China) A

210

C A Synthetic Wideband SAW Filter Using Parallel DMS (Tu4C-2)

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Yacoub, Hady

(FBH, Germany) A

290

C

High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for

Ultra Capacity Wireless Applications (We1F-2)

355

C

Modeling Base-Collector Heterojunction Barrier E ect in InP DHBTs for Improved

Large Signal Performance (We2D-3)

(MWCL)

C

A Highly Linear Dual-Stage Amplifier with Beyond 1.75-THz Gain-Bandwidth Product

(Th1E-1)

Yadav, Chandan

(NIT Calicut, India) A

511

C

Guideline for Test-Structures Placement for On-Wafer Calibration in Sub-THz Si

Device Characterization (WeIF1-12)

Yahav, N.

(Intel, Israel) A

301

C

A High-Performance Low Power Compact Wideband X-Band DCO Based on

Transformer Coupled Feedback (We1F-5)

Yamada, Shuhei

(Intel, USA) A

807

C

Vehicle Roof Embedded Millimeter-Wave Combo-Array System Architecture for

Optimum V2X Coverage (Th2D-4)

Yamaki, Natsu

(Tokyo University of Science, Japan) A

705

C

A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

Yamanaka, Shogo

(NTT, Japan) A

IMS 2021 Detailed Author Index

[Page 137 / 148]

Yang, Binbin

(North Carolina A&T State University, USA) A

556

C

Implementation of a Flat-Bottom Luneburg Lens Based on Conformal Transformation

Optics (WeIF1-24)

Yang, Chin-Lung

(National Cheng Kung University, Taiwan) A

169

C

Vibration Sensors Using Complementary Split-Ring Resonators Based on Pendulum

Structure for Frequency Detection (Tu3D-3)

Yang, Chi-Pin

(Advanced Semiconductor Engineering, Taiwan) A

553

C

Novel Discontinuity Modeling with Machine Learning and Application to Microwave

Test Fixture De-Embedding (WeIF1-23)

Yang, Danyu

(UESTC, China) A

42

C

Compact Surface-Mount Shielded and Multilayer Dual-Band Filter (Tu1C-3)

Yang, Hao-Shun

(Taipei Tech, Taiwan) A

632

C

A Pulse-Modulated RF Power Amplifier System with Output Direct Absorptive

Band-Pass Filter Connection (WeIF1-45)

Yang, Jie

(Purdue University, USA)

A

(MWCL)

C

Instinctual Interference-Adaptive Low-Power Receiver with Combined Feedforward

and Feedback Control (We3G-1)

Yang, Lily L.

(Intel, USA) A

108

C

High Accuracy RF-PUF for EM Security Through Physical Feature Assistance Using

Public Wi-Fi Dataset (Tu2D-1)

Yang, Sung-Gi

(Samsung, Korea)

A

(MWCL)

C

Asynchronous 256-Element Phased-Array Calibration for 5G Base Station (Th2A-4)

IMS 2021 Detailed Author Index

[Page 138 / 148]

Yang, Tao

(UESTC, China) A

(MWCL)

C 5G Millimeter-Wave Substrate-Integrated Waveguide Quad-Channel Diplexer with

High In-Band and Wideband Isolation (Tu1C-1)

104

C Miniaturized Reconfigurable Filtering Power Divider with Arbitrary Output Phase

Di erence and Improved Isolation (Tu2C-4)

Yang, Yang

(UTS, Australia) A

254

C Four-Way Filtering Crossover Based on Quadruple-Mode Cavity Resonator (We1C-4)

Yang, Yansong

(University of Illinois at Urbana-Champaign, USA) A

270

C Low-Loss and High Power Handling Acoustic Delay Lines Using Thin-Film Lithium

Niobate on Sapphire (We1D-5)

Yang, Yimin

(Xidian University, China)

A

146

C Flexible Design of Generalized Strongly Coupled Resonator Triplet Filters by

Regulating Redundant Resonant Modes (Tu3C-2)

154

C Expanding the Working Bandwidth of the Manifold Coupled Multiplexers (Tu3C-4)

Yang, Youngoo

(Sungkyunkwan University, Korea) A

649

C Hybrid ET Supply Modulator IC with an Adaptive Quiescent Current Controller for its

Linear Amplifier (WeIF1-51)

Yardimci, Nezih Tolga (Lookin, USA)

A

311

C Broadband Terahertz Detection with 100dB Dynamic Range Through a High

Switching-Contrast Plasmonic Nanocavity (We1G-4)

Ye, Jiao (Fudan University, China) A

831

C A CMOS 65nm 8–15GHz T/R with Multiple Compensation Techniques (Th2F-2)

Ye, Peide D.

(Purdue University, USA)

A

319

C High-Frequency Tellurene MOSFETs with Biased Contacts (We1G-6)

IMS 2021 Detailed Author Index

[Page 139 / 148]

Yeck, Mark

(IBM T.J. Watson Research Center, USA) A

803

C

Development of a Compact 28-GHz Software-Defined Phased Array for a City-Scale

Wireless Research Testbed (Th2D-3)

Yektakhah, B.

(University of Michigan, USA) A

752

C

Broadband Sub-THz Chirp Linearization Using Particle Swarm Optimization for

Precision Metrology Applications (Th1D-4)

Yeo, Kiat Seng

(SUTD, Singapore)

A

709

C

A 24.6–32.5GHz Millimeter-Wave Frequency Synthesizer for 5G Wireless and 60GHz

Applications (Th1B-2)

850

C

A 60GHz Edge-Coupled 4-Way Balun Power Amplifier with 22.7dBm Output Power

and 27.7% Peak E ciency (Th3C-4)

Yilmaz, Ali E.

(University of Texas at Austin, USA) A

112

C

Using the ANOVA F-Statistic to Rapidly Identify Near-Field Vulnerabilities of

Cryptographic Modules (Tu2D-2)

Yin, Yusheng

(University of California, San Diego, USA) A

854

C

A 5G 25–29GHz 64-Element Phased-Array with 49–52dBm EIRP, Integrated

Up/Down-Converter and On-Chip PLL (Th3D-1)

Yoo, Hyun-Jin

(Samsung, Korea)

A

721

C

A 5G mm-Wave Single Chip 8-Channel FEM with Best-in-Class 22% Power E ciency

and Embedded Die Substrate (EDS) Technology (Th1B-5)

Yool, Jongho

(KAIST, Korea) A

438

C

A 28-GHz 20.4-dBm CMOS Power Amplifier with Adaptive Common-Gate Cross

Feedback Linearization (We3E-2)

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IMS 2021 Detailed Author Index

[Page 140 / 148]

Yoon, Yong-Kyu

(University of Florida, USA)

A

62

C High E ciency Metamaterial-Based Multi-Scale Wireless Power Transfer for Smart

Home Applications (Tu1D-3)

323

C Batch-Fabricated Substrate-Embedded Ka Band Self-Biased Circulators Using

Screen-Printed Strontium Hexaferrite/PDMS Composite (We2B-1)

689

C Cu/Co Metaconductor Based Coplanar Waveguide with Sub 0.1dB/mm Insertion Loss

at 28GHz (WeIF1-64)

881

C Highly Compact Array MIMO Module for EMI Immune 5G Wireless Communications

(Th3E-6)

Yoshida, Takeshi

(Hiroshima University, Japan)

A

705

C A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

(MWCL)

C A 32-Gb/s CMOS Receiver with Analog Carrier Recovery and Synchronous QPSK

Demodulation (Th1E-3)

Yoshitomi, Kuniaki

(Kyushu University, Japan)

A

54

C E cient and Compact Dual-Band Wireless Power Transfer System Through Biological

Tissues Using Dual-Reference DGS Resonators (Tu1D-1)

You, Dongwon

(Tokyo Tech, Japan)

A

799

C A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

You, Xiaohu

(Southeast University, China)

A

592

C A CMOS LNA with Transformer-Based Integrated Notch Filter for Ku-Band Satellite

Communications (WeIF1-34)

Young, Robert M.

(Northrop Grumman, USA)

A

431

C Wideband SPDT and SP4T RF Switches Using Phase-Change Material in a SiGe BiCMOS

Process (We3D-4)

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