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DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D154

BAS216

High-speed switching diode

Product speciﬁcation			1999 Apr 22
Supersedes data of 1996 Apr 03

Philips Semiconductors		Product speciﬁcation

High-speed switching diode		BAS216


FEATURES	APPLICATIONS	DESCRIPTION

∙Small ceramic SMD package

∙High switching speed: max. 4 ns

∙Continuous reverse voltage: max. 75 V

∙Repetitive peak reverse voltage: max. 85 V

∙Repetitive peak forward current: max. 500 mA.

LIMITING VALUES

∙ High-speed switching in e.g.	The BAS216 is a high-speed
surface mounted circuits.	switching diode fabricated in planar
	technology, and encapsulated in the
	small rectangular ceramic SMD
	SOD110 package.

handbook, 4 columns			cathode mark
	k	k	a
a

bottom view

side view

top view

MAM139

Marking code: A6.

Fig.1 Simplified outline (SOD110) and symbol.

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

VRRM	repetitive peak reverse voltage		−	85	V
VR	continuous reverse voltage		−	75	V
IF	continuous forward current	note 1	−	250	mA
IFRM	repetitive peak forward current		−	500	mA
IFSM	non-repetitive peak forward current	square wave; Tj = 25 °C prior to
		surge; see Fig.4
		t = 1 μs	−	4	A
		t = 1 ms	−	1	A
		t = 1 s	−	0.5	A

Ptot	total power dissipation	Tamb = 25 °C; see Fig.2; note 1	−	400	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 22

Philips Semiconductors				Product speciﬁcation

High-speed switching diode				BAS216

ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise speciﬁed.

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

VF	forward voltage	see Fig.3
		IF = 1 mA	−	715	mV
		IF = 10 mA	−	855	mV
		IF = 50 mA	−	1	V
		IF = 150 mA	−	1.25	V
IR	reverse current	see Fig.5
		VR = 25 V	−	30	nA
		VR = 75 V	−	1	μA
		VR = 25 V; Tj = 150 °C	−	30	μA
		VR = 75 V; Tj = 150 °C	−	50	μA
Cd	diode capacitance	f = 1 MHz; VR = 0; see Fig.6	−	1.5	pF
trr	reverse recovery time	when switched from IF = 10 mA to	−	4	ns
		IR = 10 mA; RL = 100 Ω;
		measured at IR = 1 mA; see Fig.7
Vfr	forward recovery voltage	when switched from IF = 10 mA;	−	1.75	V
		tr = 20 ns; see Fig.8

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER		CONDITIONS	VALUE	UNIT

Rth j-tp	thermal resistance from junction to tie-point			200	K/W
Rth j-a	thermal resistance from junction to ambient	note 1		315	K/W

Note

1. Device mounted on an FR4 printed-circuit board.

1999 Apr 22

Philips Semiconductors													Product speciﬁcation

High-speed switching diode																BAS216

GRAPHICAL DATA

500						MSA570		300								MBG382
500								300
								handbook, halfpage

									IF
									IF
Ptot								(mA)
								(mA)

(mW)								200			(1)	(2)			(3)
(mW)											(1)	(2)			(3)
250

								100







0								0







0		100		T	(oC) 200			0		1				VF (V)		2
				amb
								(1) Tj = 150 °C; typical values.
								(2) Tj = 25 °C; typical values.
Device mounted on an FR4 printed-circuit board.								(3) Tj = 25 °C; maximum values.
Fig.2 Maximum permissible total power dissipation									Fig.3	Forward current as a function of
as a function of ambient temperature.										forward voltage.


102																	MBG704
102
handbook, full	pagewidth
handbook, full
IFSM



(A)
10


1









10−1







							102			103						104
1			10				102			103			tp (μs)			104
													tp (μs)
Based on square wave currents.
Tj = 25 °C prior to surge.

Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.

1999 Apr 22

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

105			MSA563	0.6				MBH285
105				0.6
				handbook, halfpage
I R				Cd
(nA)	V R = 75 V			(pF)
(nA)
104				0.5
104				0.5
	75 V
103				0.4
102	25 V			0.2
102				0.2
10				0
0	100	Tj (oC)	200	0	4	8	12	VR (V) 16

Dotted line: maximum values.	f = 1 MHz; Tj = 25 °C.
Solid line: typical values.	f = 1 MHz; Tj = 25 °C.
Fig.5 Reverse current as a function of	Fig.6 Diode capacitance as a function of reverse
junction temperature.	voltage; typical values.

1999 Apr 22

Philips Semiconductors	Product speciﬁcation

High-speed switching diode	BAS216

				t r	t p
					t
			D.U.T.	10%
R	= 50 Ω		IF		I F	t rr
S				SAMPLING		t
				SAMPLING
				OSCILLOSCOPE
				OSCILLOSCOPE
V = VR		IF x R S		R i = 50 Ω
					90%	(1)
				VR	90%
				VR
				MGA881

input signal

output signal

(1) IR = 1 mA.

Fig.7 Reverse recovery voltage test circuit and waveforms.

I	1 k Ω	450 Ω			V
		I	90%		V
			90%
RS = 50 Ω	D.U.T.	OSCILLOSCOPE			V fr
	D.U.T.	R i = 50 Ω
		R i = 50 Ω
		10%
		MGA882		t	t
		t r	t p
			input		output
			signal		signal

Fig.8 Forward recovery voltage test circuit and waveforms.

1999 Apr 22

1 / 21 2 > Следующая >>>

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FEATURES

APPLICATIONS

DESCRIPTION

LIMITING VALUES

ELECTRICAL CHARACTERISTICS

THERMAL CHARACTERISTICS

GRAPHICAL DATA