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4 Hometask. Makeready

4.1 To study theoretical material on literature [2.1.2.5] and to the methodical pointing to this laboratory work:

Table 3.3 are the Investigated parameters

Line of наче-ния

Oscillograms of electric processes

G1, U

Tension of uп(t) on the output of source of G1

G1, I

Current of iп(t), consumable from a source G1

TV1, магн. stream

Magnetic stream of Ф(t) of transformer of ТV1

TV1, U1

Tension of uW1(t) on the puttee of W1 of transformer of ТV1

TV1, I1

Current of iW1(t) puttee of W1 of transformer of ТV1

TV1, U2

Tension of uW2(t) on the puttee of W2 of transformer of ТV1

TV1, I2

Current of iW2(t) puttee of W2 of transformer of TV1

TV1, U3

Tension of uW3(t) on the puttee of W3 of transformer of ТV1

TV1, I3

Current of iW3(t) puttee of W3 of transformer of ТV1

TV1, U4

Tension of uW4(t) on the puttee of W4 of transformer of ТV1

TV1, I4

Current of iW4(t) puttee of W4 of transformer of TV1

TV1, U5

Tension of uW5(t) on the puttee of W5 of transformer of ТV1

TV1, I5

Current of iW5(t) puttee of W5 of transformer of TV1

VT1, Uкэ

Tension is an uVT1(t) collector-emitter of transistor of VT1

VT1, Iк

Current of iVT1(t) collector of transistor of VT1

VT1, Uбэ

Tension is an uбVT1(t) base-emitter of transistor of VT1

VT1, Iб

Current of iбVT1(t) base of transistor of VT1

VT2, Uкэ

Tension is an uVT2(t) collector-emitter of transistor of VT2

VT2, Iк

Current of iVT2(t) collector of transistor of VT2

VT2 Uбэ

Tension is an uбVT2(t) base-emitter of transistor of VT2

VT2, Iб

Current of iбVT2(t) base of transistor of VT2

VD1, U

Tension of uVD1(t) between a cathode and anode of diode of VD1

VD1, I

Current of iVD1(t) diode of VD1

VD2, U

Tension of uVD2(t) between a cathode and anode of diode of VD2

VD2, I

Current of iVD2(t) diode of VD2

L1, U

Tension of uL1(t) on the throttle of L1

L1, I

Current of iL1(t) throttle of L1

C2, U

Tension of uC2(t) on the condenser of С2

C2, I

Current of iC2(t) condenser of С2

Rн, U

Tension of uн(t) on loading

Rн, I

Current of the iн(t) loading

  • features of structural and functional construction of transistor transformers of permanent tension;

  • features and limitations, laid on circuit technology realization of separate submachines of transistor transformers of permanent tension;

  • processes of functioning in the transistor transformers of permanent tension self-excited and with independent excitation (with a power-amplifier);

  • features of laboratory model (см. of разд. 3).

4.2 To familiarize with the methodical pointing to this laboratory work.

4.3 To prepare the forms of report, where to bring information over, necessary, in opinion of student, for implementation of laboratory work.

4.4 To get a clear idea of setting of every element of transformer, purpose of every experience, expected results.

4.5 To answer control questions.

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