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D a t a S h e e t

18. Erase and Programming Performance

Parameter

 

Typ (Note 1)

Max (Note 2)

Unit

Comments

 

 

 

 

 

 

Sector Erase Time (Note 7)

 

0.7

10

s

Excludes 00h programming

 

 

 

 

 

Chip Erase Time (Note 8)

 

45

 

s

prior to erasure (Note 4)

 

 

 

 

 

 

 

 

 

Byte Programming Time

 

9

300

µs

 

 

 

 

 

 

 

Word Programming Time

 

11

360

µs

 

 

 

 

 

 

Excludes system level overhead

Accelerated Byte/Word Programming Time

7

210

µs

(Note 5)

 

 

 

 

 

Chip Programming Time

Byte Mode

36

108

s

 

(Note 3)

 

 

 

 

 

Word Mode

24

72

s

 

 

 

 

 

 

 

Notes

1.Typical program and erase times assume the following conditions: 25°C, VCC = 3.0 V, 100,000 cycles, checkerboard data pattern.

2.Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.

3.The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed.

4.In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5.System-level overhead is the time required to execute the twoor four-bus-cycle sequence for the program command. See Table 11.2 for further information on command definitions.

6.The device has a minimum erase and program cycle endurance of 100,000 cycles per sector.

7.At extended temperature range (>+85°C), typical erase time is 1.75 s and maximum erase time is 25 s.

8.At extended temperature range (>+85°C), typical erase time is 112 s.

19. TSOP and BGA Pin Capacitance

Parameter Symbol

Parameter Description

Test Setup

Package

Typ

Max

Unit

 

 

 

 

 

 

 

CIN

Input Capacitance

VIN = 0

TSOP

6

7.5

pF

 

 

 

 

BGA

4.2

5.0

pF

 

 

 

 

 

 

 

 

 

 

COUT

Output Capacitance

VOUT = 0

TSOP

8.5

12

pF

 

 

 

 

BGA

5.4

6.5

pF

 

 

 

 

 

 

 

 

 

 

CIN2

Control Pin Capacitance

VIN = 0

TSOP

7.5

9

pF

 

 

 

 

BGA

3.9

4.7

pF

 

 

 

 

 

 

 

 

 

 

Notes

1.Sampled, not 100% tested.

2.Test conditions TA = 25°C, f = 1.0 MHz.

60

S29AL032D

S29AL032D_00_A9 January 19, 2007

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