
- •Distinctive Characteristics
- •General Description
- •S29AL032D Features
- •Table of Contents
- •List of Tables
- •List of Figures
- •1. Product Selector Guide
- •2. Block Diagram
- •3. Connection Diagrams
- •3.1 FBGA Package for Model 00 Only
- •3.2 FBGA Package for Models 03, 04 Only
- •3.3 Special Handling Instructions
- •4. Pin Configuration
- •5. Logic Symbols
- •6. Ordering Information
- •6.1 S29AL032D Standard Products
- •6.2 Valid Combinations
- •7. Device Bus Operations
- •7.1 Word/Byte Configuration (Models 03, 04 Only)
- •7.2 Requirements for Reading Array Data
- •7.3 Writing Commands/Command Sequences
- •7.4 Program and Erase Operation Status
- •7.5 Accelerated Program Operation
- •7.6 Standby Mode
- •7.7 Automatic Sleep Mode
- •7.8 RESET#: Hardware Reset Pin
- •7.9 Output Disable Mode
- •7.10 Sector Addresss Tables
- •7.11 Autoselect Mode
- •7.12 Sector Protection/Unprotection
- •7.14 Temporary Sector Unprotect
- •8. Secured Silicon Sector Flash Memory Region
- •9. Hardware Data Protection
- •9.2 Write Pulse “Glitch” Protection
- •9.3 Logical Inhibit
- •10. Common Flash Memory Interface (CFI)
- •11. Command Definitions
- •11.1 Reading Array Data
- •11.2 Reset Command
- •11.3 Autoselect Command Sequence
- •11.5 Word/Byte Program Command Sequence
- •11.6 Unlock Bypass Command Sequence
- •11.7 Chip Erase Command Sequence
- •11.8 Sector Erase Command Sequence
- •11.9 Erase Suspend/Erase Resume Commands
- •11.10 Command Definitions Table
- •12. Write Operation Status
- •12.1 DQ7: Data# Polling
- •12.2 RY/BY#: Ready/Busy#
- •12.3 DQ6: Toggle Bit I
- •12.4 DQ2: Toggle Bit II
- •12.5 Reading Toggle Bits DQ6/DQ2
- •12.6 DQ5: Exceeded Timing Limits
- •12.7 DQ3: Sector Erase Timer
- •13. Absolute Maximum Ratings
- •14. Operating Ranges
- •15. DC Characteristics
- •15.1 Zero Power Flash
- •16. Test Conditions
- •16.1 Key to Switching Waveforms
- •17. AC Characteristics
- •17.1 Read Operations
- •17.2 Hardware Reset (RESET#)
- •17.3 Word/Byte Configuration (BYTE#) (Models 03, 04 Only)
- •17.4 Erase/Program Operations
- •17.5 Temporary Sector Unprotect
- •17.6 Alternate CE# Controlled Erase/Program Operations
- •18. Erase and Programming Performance
- •19. TSOP and BGA Pin Capacitance
- •20. Physical Dimensions
- •21. Revision History

D a t a S h e e t
15. DC Characteristics
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Table 15.1 |
DC Characteristics, CMOS Compatible |
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Parameter |
Description |
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Test Conditions |
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Min |
Typ |
Max |
Unit |
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ILI |
Input Load Current (Note 1) |
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VIN = VSS to VCC, |
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±1.0 |
µA |
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VCC = VCC max |
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ILIT |
A9 Input Load Current |
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VCC = VCC max; A9 = 12.5 V |
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35 |
µA |
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ILO |
Output Leakage Current |
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VOUT = VSS to VCC, |
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±1.0 |
µA |
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VCC = VCC max |
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10 MHz |
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15 |
30 |
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CE# = VIL, OE# = VIH, |
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5 MHz |
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9 |
16 |
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Byte Mode |
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ICC1 |
VCC Active Read Current |
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1 MHz |
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2 |
4 |
mA |
(Notes 2, 3) |
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10 MHz |
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18 |
35 |
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CE# = VIL, OE# = VIH, |
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5 MHz |
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9 |
16 |
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Word Mode |
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1 MHz |
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2 |
4 |
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ICC2 |
VCC Active Write Current |
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CE# = VIL, OE# = VIH |
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15 |
35 |
mA |
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(Notes 3, 4, 6) |
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ICC3 |
VCC Standby Current (Notes 3, 5) |
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CE#, RESET# = VCC±0.3 V |
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0.2 |
5 |
µA |
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ICC4 |
VCC Standby Current During Reset |
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RESET# = VSS ± 0.3 V |
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0.2 |
5 |
µA |
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(Notes 3, 5) |
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ICC5 |
Automatic Sleep Mode |
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VIH = VCC ± 0.3 V; |
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0.2 |
5 |
µA |
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(Notes 3, 5, 7) |
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VIL = VSS ± 0.3 V |
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IACC |
ACC Accelerated Program Current, |
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CE# = VIL, OE# = VIH |
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ACC pin |
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5 |
10 |
mA |
Word or Byte |
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VCC pin |
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15 |
30 |
mA |
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VIL |
Input Low Voltage |
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–0.5 |
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0.8 |
V |
VIH |
Input High Voltage |
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0.7 x VCC |
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VCC + 0.3 |
V |
VHH |
Voltage for WP#/ACC Sector Protect/ |
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VCC = 3.0 V ± 10% |
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11.5 |
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12.5 |
V |
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Unprotect and Program Acceleration |
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VID |
Voltage for Autoselect and Temporary |
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VCC = 3.3 V |
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11.5 |
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12.5 |
V |
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Sector Unprotect |
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VOL |
Output Low Voltage |
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IOL = 4.0 mA, VCC = VCC min |
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0.45 |
V |
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VOH1 |
Output High Voltage |
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IOH = -2.0 mA, VCC = VCC min |
2.4 |
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V |
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VOH2 |
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IOH = -100 µA, VCC = VCC min |
VCC–0.4 |
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V |
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VLKO |
Low VCC Lock-Out Voltage (Note 4) |
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2.3 |
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2.5 |
V |
Notes
1.On the ACC pin only, the maximum input load current when ACC = VIL is ±5.0 µA.
2.The ICC current listed is typically less than 2 mA/MHz, with OE# at VIH. Typical VCC is 3.0 V.
3.Maximum ICC specifications are tested with VCC = VCCmax.
4.ICC active while Embedded Erase or Embedded Program is in progress.
5.At extended temperature range (>+85°C), maximum current is 15 µA.
6.Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is 200 nA.
7.Not 100% tested.
46 |
S29AL032D |
S29AL032D_00_A9 January 19, 2007 |

D a t a S h e e t
15.1Zero Power Flash
Figure 15.1 ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
25
Supply Current in mA
Note
20
15
10
5
0
0 |
500 |
1000 |
1500 |
2000 |
2500 |
3000 |
3500 |
4000 |
Time in ns
Addresses are switching at 1 MHz.
Figure 15.2 Typical ICC1 vs. Frequency
Supply Current in mA
Note
T = 25°C
10
3.6 V
8
2.7 V
6
4
2
0
1 |
2 |
3 |
4 |
5 |
Frequency in MHz
January 19, 2007 S29AL032D_00_A9 |
S29AL032D |
47 |