
- •Distinctive Characteristics
- •General Description
- •S29AL032D Features
- •Table of Contents
- •List of Tables
- •List of Figures
- •1. Product Selector Guide
- •2. Block Diagram
- •3. Connection Diagrams
- •3.1 FBGA Package for Model 00 Only
- •3.2 FBGA Package for Models 03, 04 Only
- •3.3 Special Handling Instructions
- •4. Pin Configuration
- •5. Logic Symbols
- •6. Ordering Information
- •6.1 S29AL032D Standard Products
- •6.2 Valid Combinations
- •7. Device Bus Operations
- •7.1 Word/Byte Configuration (Models 03, 04 Only)
- •7.2 Requirements for Reading Array Data
- •7.3 Writing Commands/Command Sequences
- •7.4 Program and Erase Operation Status
- •7.5 Accelerated Program Operation
- •7.6 Standby Mode
- •7.7 Automatic Sleep Mode
- •7.8 RESET#: Hardware Reset Pin
- •7.9 Output Disable Mode
- •7.10 Sector Addresss Tables
- •7.11 Autoselect Mode
- •7.12 Sector Protection/Unprotection
- •7.14 Temporary Sector Unprotect
- •8. Secured Silicon Sector Flash Memory Region
- •9. Hardware Data Protection
- •9.2 Write Pulse “Glitch” Protection
- •9.3 Logical Inhibit
- •10. Common Flash Memory Interface (CFI)
- •11. Command Definitions
- •11.1 Reading Array Data
- •11.2 Reset Command
- •11.3 Autoselect Command Sequence
- •11.5 Word/Byte Program Command Sequence
- •11.6 Unlock Bypass Command Sequence
- •11.7 Chip Erase Command Sequence
- •11.8 Sector Erase Command Sequence
- •11.9 Erase Suspend/Erase Resume Commands
- •11.10 Command Definitions Table
- •12. Write Operation Status
- •12.1 DQ7: Data# Polling
- •12.2 RY/BY#: Ready/Busy#
- •12.3 DQ6: Toggle Bit I
- •12.4 DQ2: Toggle Bit II
- •12.5 Reading Toggle Bits DQ6/DQ2
- •12.6 DQ5: Exceeded Timing Limits
- •12.7 DQ3: Sector Erase Timer
- •13. Absolute Maximum Ratings
- •14. Operating Ranges
- •15. DC Characteristics
- •15.1 Zero Power Flash
- •16. Test Conditions
- •16.1 Key to Switching Waveforms
- •17. AC Characteristics
- •17.1 Read Operations
- •17.2 Hardware Reset (RESET#)
- •17.3 Word/Byte Configuration (BYTE#) (Models 03, 04 Only)
- •17.4 Erase/Program Operations
- •17.5 Temporary Sector Unprotect
- •17.6 Alternate CE# Controlled Erase/Program Operations
- •18. Erase and Programming Performance
- •19. TSOP and BGA Pin Capacitance
- •20. Physical Dimensions
- •21. Revision History

D a t a S h e e t
10. Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation handshake, which allows specific vendor-specified software algorithms to be used for entire families of devices. Software support can then be device-independent, JEDEC ID-independent, and forwardand backward-compatible for the specified flash device families. Flash vendors can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address 55h in word mode (or address AAh in byte mode), any time the device is ready to read array data. The system can read CFI information at the addresses given in Tables 10.1–10.4. In word mode, the upper address bits (A7–MSB) must be all zeros. To terminate reading CFI data, the system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode. The device enters the CFI query mode, and the system can read CFI data at the addresses given in Tables 10.1–10.4. The system must write the reset command to return the device to the autoselect mode.
For further information, please contact a Spansion representative for a copy of this document.
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Table 10.1 |
CFI Query Identification String |
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Addresses |
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(Models 03, 04 |
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Addresses |
Byte Mode Only) |
Data |
Description |
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10h |
20h |
0051h |
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11h |
22h |
0052h |
Query Unique ASCII string QRY |
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12h |
24h |
0059h |
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13h |
26h |
0002h |
Primary OEM Command Set |
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14h |
28h |
0000h |
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15h |
2Ah |
0040h |
Address for Primary Extended Table |
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16h |
2Ch |
0000h |
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17h |
2Eh |
0000h |
Alternate OEM Command Set (00h = none exists) |
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18h |
30h |
0000h |
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19h |
32h |
0000h |
Address for Alternate OEM Extended Table (00h = none exists) |
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1Ah |
34h |
0000h |
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Table 10.2 System Interface String |
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Addresses |
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(Models 03, 04 |
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Description |
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Addresses |
Byte Mode Only) |
Data |
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1Bh |
36h |
0027h |
VCC Min. (write/erase) |
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D7–D4: volt, D3–D0: 100 millivolt |
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1Ch |
38h |
0036h |
VCC Max. (write/erase) |
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D7–D4: volt, D3–D0: 100 millivolt |
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1Dh |
3Ah |
0000h |
VPP Min. voltage (00h = no VPP pin present) |
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1Eh |
3Ch |
0000h |
VPP Max. voltage (00h = no VPP pin present) |
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1Fh |
3Eh |
0004h |
Typical timeout per single byte/word write 2N µs |
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20h |
40h |
0000h |
Typical timeout for Min. size buffer write 2N µs (00h = not supported) |
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21h |
42h |
000Ah |
Typical timeout per individual block erase 2N ms |
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22h |
44h |
0000h |
Typical timeout for full chip erase 2N ms (00h = not supported) |
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23h |
46h |
0005h |
Max. timeout for byte/word write 2N times typical |
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24h |
48h |
0000h |
Max. timeout for buffer write 2N times typical |
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25h |
4Ah |
0004h |
Max. timeout per individual block erase 2N times typical |
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26h |
4Ch |
0000h |
Max. timeout for full chip erase 2N times typical (00h = not supported) |
January 19, 2007 S29AL032D_00_A9 |
S29AL032D |
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D a t a S h e e t |
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Table 10.3 |
Device Geometry Definition |
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Addresses |
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(Models 03, 04 |
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Addresses |
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Byte Mode Only) |
Data |
Description |
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27h |
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4Eh |
0016h |
Device Size = 2N byte |
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28h |
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50h |
000xh |
Flash Device Interface description (refer to CFI publication 100) |
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29h |
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52h |
0000h |
(0 = Model 00, 2 = Models 03, 04) |
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2Ah |
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54h |
0000h |
Max. number of byte in multi-byte write = 2N |
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2Bh |
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56h |
0000h |
(00h = not supported) |
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2Ch |
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58h |
000xh |
Number of Erase Block Regions within device |
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(1 = Model 00, 2 = Models 03, 04) |
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2Dh |
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5Ah |
00xxh |
Erase Block Region 1 Information |
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2Eh |
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5Ch |
0000h |
(refer to the CFI specification or CFI publication 100) |
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2Fh |
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5Eh |
00x0h |
(003F, 0000, 0000, 0001) = Model 00 |
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30h |
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60h |
000xh |
(0007, 0000, 0020, 0000) = Models 03, 04 |
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31h |
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62h |
00xxh |
Erase Block Region 2 Information |
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32h |
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64h |
0000h |
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(0000, 0000, 0000, 0000) = Model 00 |
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33h |
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66h |
0020h |
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(003E, 0000, 0000, 0001) = Models 03, 04 |
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34h |
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68h |
000xh |
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35h |
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6Ah |
0000h |
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36h |
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6Ch |
0000h |
Erase Block Region 3 Information |
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37h |
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6Eh |
0000h |
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38h |
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70h |
0000h |
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39h |
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72h |
0000h |
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3Ah |
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74h |
0000h |
Erase Block Region 4 Information |
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3Bh |
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76h |
0000h |
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3Ch |
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78h |
0000h |
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S29AL032D |
S29AL032D_00_A9 January 19, 2007 |

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D a t a |
S h e e t |
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Table 10.4 Primary Vendor-Specific Extended Query |
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Addresses |
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(Models 03, 04 |
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Addresses |
Byte Mode Only) |
Data |
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Description |
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40h |
80h |
0050h |
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41h |
82h |
0052h |
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Query-unique ASCII string “PRI” |
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42h |
84h |
0049h |
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43h |
86h |
0031h |
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Major version number, ASCII |
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44h |
88h |
0031h |
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Minor version number, ASCII |
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45h |
8Ah |
000xh |
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Address Sensitive Unlock |
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0 = Required (Models 03, 04), 1 = Not Required (Model 00) |
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46h |
8Ch |
0002h |
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Erase Suspend |
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0 = Not Supported, 1 = To Read Only, 2 = To Read & Write |
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47h |
8Eh |
0001h |
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Sector Protect |
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0 = Not Supported, X = Number of sectors in per group |
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48h |
90h |
0001h |
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Sector Temporary Unprotect |
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00 = Not Supported, 01 = Supported |
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Sector Protect/Unprotect scheme |
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49h |
92h |
0004h |
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01 = 29F040 mode, 02 = 29F016 mode, |
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03 = 29F400 mode, 04 = 29LV800A mode |
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4Ah |
94h |
0000h |
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Simultaneous Operation |
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00 = Not Supported, 01 = Supported |
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4Bh |
96h |
0000h |
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Burst Mode Type |
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00 = Not Supported, 01 = Supported |
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4Ch |
98h |
0000h |
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Page Mode Type |
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00 = Not Supported, 01 = 4 Word Page, 02 = 8 Word Page |
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4Dh |
9Ah |
00B5h |
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ACC (Acceleration) Supply Minimum |
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00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV |
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4Eh |
9Ch |
00C5h |
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ACC (Acceleration) Supply Maximum |
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00h = Not Supported, D7-D4: Volt, D3-D0: 100 mV |
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4Fh |
9Eh |
000xh |
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Top/Bottom Boot Sector Flag |
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(0 = Model 00, 3 = Model 03, 2 = Model 04) |
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January 19, 2007 S29AL032D_00_A9 |
S29AL032D |
31 |