Rev.

ECN No.

Orig. of

Submission

Description of Change

Change

Date

**

-

RYSU

09/21/2005

DS Status

Change of DS status to “Preliminary” from “Advance Information”.

Sector Protection/Unprotection

Corrected “In-System Sector Protect/Unprotect Algorithms” figure.

05/22/2006

AC Characteristics

Added tSR/W parameter to read and erase/program operations tables.

Added back-to-back read/write cycle timing diagram. Changed maximum

value for tDF and tFLQZ.

06/19/2006

Ordering Information

Added extended temperature range options to valid combinations.

Common Flash Memory Interface (CFI)

Primary Vendor-Specific Extended Query table: Change description for

data at address 4Fh

Design

(address 9Eh on Models 03, 04).

DC Characteristics

New

Changed Note 4.

Read Operations Timings figure

Connected end of tRC period to start of tOH period.

for

Erase and Programming Performance

Added Not s 7 and 8 to table.

11/02/2006

Valid Combinations

Updat table.

**

-

RYSU

01/19/2007

Autoselect Code (High Voltage Method)table; Command Definitions,

x8 Mode—Models 03, 04 table

Corrected data for Secured Silicon Sector Sector Indicator Bit.

*A

5038714

RYSU

12/07/2015

Updated to cypress template

*B

5075821

RYSU

01/08/2016

Added a note in blue font in page 1 showing the suggested replacement

parts.

Not

RecommendedRemoved Spansion Revision History.

Document Number: 002-02003 Rev. *B

Page 63 of 64