- •Distinctive Characteristics
- •General Description
- •S29AL032D Features
- •1. Product Selector Guide
- •2. Block Diagram
- •3. Connection Diagrams
- •Figure 3.1 40-pin Standard TSOP
- •3.1 FBGA Package for Model 00 Only
- •Figure 3.3 Model 00 48-ball FBGA (Top View, Balls Facing Down)
- •3.2 FBGA Package for Models 03, 04 Only
- •Figure 3.4 Models 03, 04 48-ball FBGA (Top View, Balls Facing Down)
- •3.3 Special Handling Instructions
- •4. Pin Configuration
- •5. Logic Symbols
- •6. Ordering Information
- •6.1 S29AL032D Standard Products
- •6.2 Valid Combinations
- •7. Device Bus Operations
- •Table 8. S29AL032D Device Bus Operations
- •7.1 Word/Byte Configuration (Models 03, 04 Only)
- •7.2 Requirements for Reading Array Data
- •7.4 Program and Erase Operation Status
- •7.5 Accelerated Program Operation
- •7.6 Standby Mode
- •7.7 Automatic Sleep Mode
- •7.8 RESET#: Hardware Reset Pin
- •7.9 Output Disable Mode
- •7.10 Sector Addresss Tables
- •Table 8. Model 00 Sector Addresses (Sheet 1 of 2)
- •Table 9. Model 00 Secured Silicon Sector Addresses
- •Table 10. Model 03 Sector Addresses (Sheet 1 of 2)
- •Table 11. Model 03 Secured Silicon Sector Addresses
- •Table 12. Model 04 Sector Addresses (Sheet 1 of 2)
- •Table 13. Model 04 Secured Silicon Sector Addresses
- •7.11 Autoselect Mode
- •Table 8. S29AL032D Autoselect Codes (High Voltage Method)
- •7.12 Sector Protection/Unprotection
- •Table 8. Sector Block Addresses for Protection/Unprotection — Model 00
- •Table 9. Sector Block Addresses for Protection/Unprotection — Model 03 (Sheet 1 of 2)
- •7.13 Write Protect (WP#) — Models 03, 04 Only
- •7.14 Temporary Sector Unprotect
- •8. Secured Silicon Sector Flash Memory Region
- •Figure 8.1 Secured Silicon Sector Protect Verify
- •9. Hardware Data Protection
- •9.1 Low VCC Write Inhibit
- •9.2 Write Pulse “Glitch” Protection
- •9.3 Logical Inhibit
- •10. Common Flash Memory Interface (CFI)
- •Table 11. CFI Query Identification String
- •Table 12. System Interface String
- •Table 13. Device Geometry Definition
- •11. Command Definitions
- •11.1 Reading Array Data
- •11.2 Reset Command
- •11.3 Autoselect Command Sequence
- •11.6 Unlock Bypass Command Sequence
- •Figure 11.1 Program Operation
- •11.7 Chip Erase Command Sequence
- •11.8 Sector Erase Command Sequence
- •Figure 11.2 Erase Operation
- •11.10 Command Definitions Table
- •Table 12. S29AL032D Command Definitions — Model 00
- •12. Write Operation Status
- •12.1 DQ7: Data# Polling
- •Figure 12.1 Data# Polling Algorithm
- •12.2 RY/BY#: Ready/Busy#
- •12.3 DQ6: Toggle Bit I
- •12.4 DQ2: Toggle Bit II
- •12.5 Reading Toggle Bits DQ6/DQ2
- •Figure 12.2 Toggle Bit Algorithm
- •12.6 DQ5: Exceeded Timing Limits
- •12.7 DQ3: Sector Erase Timer
- •Table 13. Write Operation Status
- •13. Absolute Maximum Ratings
- •Table 14. Absolute Maximum Ratings
- •14. Operating Ranges
- •Table 15. Operating Ranges
- •15. DC Characteristics
- •Table 16. DC Characteristics, CMOS Compatible
- •15.1 Zero Power Flash
- •Figure 15.2 Typical ICC1 vs. Frequency
- •16. Test Conditions
- •16.1 Key to Switching Waveforms
- •Figure 16.1 Input Waveforms and Measurement Levels
- •17. AC Characteristics
- •17.1 Read Operations
- •Figure 17.1 Read Operations Timings
- •17.2 Hardware Reset (RESET#)
- •17.3 Word/Byte Configuration (BYTE#) (Models 03, 04 Only)
- •Figure 17.3 BYTE# Timings for Read Operations
- •Figure 17.4 BYTE# Timings for Write Operations
- •17.4 Erase/Program Operations
- •Table 18. Erase/Program Operations
- •Figure 18.1 Program Operation Timings
- •Figure 18.3 Back to Back Read/Write Cycle Timing
- •Figure 18.4 Data# Polling Timings (During Embedded Algorithms)
- •Figure 18.5 Toggle Bit Timings (During Embedded Algorithms)
- •17.5 Temporary Sector Unprotect
- •Table 18. Temporary Sector Unprotect
- •Figure 18.1 Temporary Sector Unprotect Timing Diagram
- •Figure 18.3 Sector Protect/Unprotect Timing Diagram
- •17.6 Alternate CE# Controlled Erase/Program Operations
- •Figure 18.1 Alternate CE# Controlled Write Operation Timings
- •18. Erase and Programming Performance
- •19. TSOP and BGA Pin Capacitance
- •19.3 VBN048—48-Ball Fine-Pitch Ball Grid Array (FBGA) 10.0 x 6.0 mm
- •20. Document History Page
- •RYSU
- •RYSU
- •RYSU
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- •RYSU
- •Sales, Solutions, and Legal Information
- •Worldwide Sales and Design Support
- •Products
- •PSoC® Solutions
- •Cypress Developer Community
- •Technical Support
S29AL032D
Figure 18.5 Toggle Bit Timings (During Embedded Algorithms)
tRC
Addresses |
VA |
VA |
VA |
VA |
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tACC |
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CE# |
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tCE |
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tCH |
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tOE |
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OE# |
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tOEH |
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tDF |
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WE# |
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tOH |
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DQ6/DQ2 |
High Z |
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Valid Status |
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Valid Status |
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Valid Status |
Valid Data |
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tBUSY |
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(first read) |
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(stops toggling) |
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RY/BY# |
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Note |
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VA = Valid address; not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data |
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read cycle. |
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for |
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Figure 18.6 |
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DQ2 vs. DQ6 for Erase and Erase Suspend Operations |
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Enter |
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Recommended |
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Embedded |
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Erase |
Enter Erase |
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Erase |
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Erasing |
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Suspend |
Suspe d Program |
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Resume |
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WE# |
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Erase |
Erase Susp nd |
Erase |
Erase Suspend |
Erase |
Erase |
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Read |
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Suspend |
Read |
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Complete |
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Program |
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DQ6 |
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DQ2 |
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The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an erase-suspended sector. |
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17.5 |
Temporary Sector Unprotect |
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Table 18. Temporary Sector Unprotect
Parameter |
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All Speed Options |
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JEDEC |
Std. |
Description |
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Unit |
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tVIDR |
VID Rise and Fall Time (See Note) |
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500 |
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tRSP |
RESET# Setup Time for Temporary Sector |
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4 |
µs |
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Unprotect |
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Note
Not 100% tested.
Figure 18.1 Temporary Sector Unprotect Timing Diagram
Document Number: 002-02003 Rev. *B |
Page 53 of 64 |
S29AL032D
12 V
RESET#
0 or 3 V
Program or Erase Command Sequence
tVIDR |
tVIDR |
CE#
WE#
RY/BY#
WP#/ACC
tRSP 
Figure 18.2 Accelerated Program
VHH |
Recommended |
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VIL or VIH |
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tVHH |
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New |
Design |
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Timing Diagram
VIL or VIH
tVHH
Document Number: 002-02003 Rev. *B |
Page 54 of 64 |
