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Эквивалентная электрическая схема

 

 

 

 

 

 

Rd

 

 

 

 

 

 

 

 

Iph=Photocurrent generated by detector

Iph

Id

Cd

 

 

 

 

 

 

 

 

Cd=Detector Capacitance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Id=Dark Current

 

 

 

 

 

 

 

 

 

 

PIN

 

 

 

In=Multiplied noise current in APD

 

 

 

 

 

 

 

 

R =Bulk and contact resistance

 

 

 

 

 

 

 

 

Rd d

Iph

Id

In

Cd

APD

Ёмкость фотоприемника

P

N

 

 

C

A

p-n

 

junction

 

 

 

w xp xn

W

 

 

 

 

 

 

For a uniformly doped junction

Capacitance must be minimized for high sensitivity (low noise) and for high speed operation

Minimize by using the smallest light collecting area consistent with efficient collection of the incident light

Minimize by putting low doped “I” region between the P and N doped regions to increase W, the depletion width

W can be increased until field required to fully deplete causes excessive dark current, or carrier transit time begins to limit speed.

 

A

2q

 

 

 

1/ 2

 

 

C

 

Nd

 

Where: =permitivity

q=electron charge

 

 

 

 

 

 

2

o

V

bi

 

 

V

 

 

 

 

 

Nd=Active dopant density

 

 

 

 

 

 

 

 

 

1/ 2

 

 

2 (Vo

Vbi)

 

 

 

 

 

 

 

 

 

 

 

 

W

 

qNd

 

 

 

Vo=Applied voltage

Vbi=Built in potential

A=Junction area

Полоса пропускания

C= 0 A/w;

B = 1/2 RC

Transit time

=W/vsat

vsat=saturation velocity=2x107 cm/s

R-C Limitation

 

 

 

R A

 

 

RC

 

in W

 

Responsivity

 

R

q

1 Rp 1 e W

h

 

 

 

 

Diffusion

=4 ns/µm (slow)

Искажения сигнала

Темновой ток

Surface Leakage

Bulk Leakage

Surface Leakage

Bulk Leakage

Ohmic Conduction

Diffusion

Generation-recombination

Generation-Recombination

via surface states

Tunneling

 

Usually not a significant noise source at high bandwidths for PIN Structures High dark current can indicate poor potential reliability

In APDs its multiplication can be significant

Типовые характеритики фотодиодов

Функциональная схема фотоприемника

Типы фотоприемников

 

+Bias

 

+Bias

 

 

+Bias

Rf

 

 

 

 

 

 

 

 

 

 

 

Is

 

Is

 

 

 

Is

 

 

 

 

 

 

 

 

Output

 

 

 

Output

 

Output

 

 

 

 

 

 

RL

 

RL

Ct

 

 

Ct

 

 

 

 

 

Amplifier

50

Amplifier

 

Amplifier

Equalizer

 

 

 

 

 

 

Low Impedance

High Impedance

Transimpedance

Low Sensitivity

Requires Equalizer for high BW

High Dynamic Range

Easily Made

High Sensitivity

High Sensitivity

Wide Band

Low Dynamic Range

Stability Problems

 

Careful Equalizer Placement Required Difficult to equalize

Регенерация и усиление

Энергетический бюджет

Линейная система