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Файл:dsd1-10 / dsd-01=Компоненты ИС / JOB / mos1 / mos1temp
.c/**********
Copyright 1990 Regents of the University of California. All rights reserved.
Author: 1985 Thomas L. Quarles
**********/
#include "spice.h"
#include <stdio.h>
#include "cktdefs.h"
#include "mos1defs.h"
#include "util.h"
#include "const.h"
#include "sperror.h"
#include "suffix.h"
int
MOS1temp(inModel,ckt)
GENmodel *inModel;
register CKTcircuit *ckt;
{
register MOS1model *model = (MOS1model *)inModel;
register MOS1instance *here;
double egfet,egfet1;
double fact1,fact2;
double kt,kt1;
double arg1;
double ratio,ratio4;
double phio;
double pbo;
double gmanew,gmaold;
double capfact;
double pbfact1,pbfact;
double vt,vtnom;
double wkfngs;
double wkfng;
double fermig;
double fermis;
double vfb;
/* loop through all the resistor models */
for( ; model != NULL; model = model->MOS1nextModel) {
/* perform model defaulting */
if(!model->MOS1tnomGiven) {
model->MOS1tnom = ckt->CKTnomTemp;
}
fact1 = model->MOS1tnom/REFTEMP;
vtnom = model->MOS1tnom*CONSTKoverQ;
kt1 = CONSTboltz * model->MOS1tnom;
egfet1 = 1.16-(7.02e-4*model->MOS1tnom*model->MOS1tnom)/
(model->MOS1tnom+1108);
arg1 = -egfet1/(kt1+kt1)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact1 = -2*vtnom *(1.5*log(fact1)+CHARGE*arg1);
/* now model parameter preprocessing */
if(!model->MOS1oxideThicknessGiven || model->MOS1oxideThickness == 0) {
model->MOS1oxideCapFactor = 0;
} else {
model->MOS1oxideCapFactor = 3.9 * 8.854214871e-12/
model->MOS1oxideThickness;
if(!model->MOS1transconductanceGiven) {
if(!model->MOS1surfaceMobilityGiven) {
model->MOS1surfaceMobility=600;
}
model->MOS1transconductance = model->MOS1surfaceMobility *
model->MOS1oxideCapFactor * 1e-4 /*(m**2/cm**2)*/;
}
if(model->MOS1substrateDopingGiven) {
if(model->MOS1substrateDoping*1e6 /*(cm**3/m**3)*/ >1.45e16) {
if(!model->MOS1phiGiven) {
model->MOS1phi = 2*vtnom*
log(model->MOS1substrateDoping*
1e6/*(cm**3/m**3)*//1.45e16);
model->MOS1phi = MAX(.1,model->MOS1phi);
}
fermis = model->MOS1type * .5 * model->MOS1phi;
wkfng = 3.2;
if(!model->MOS1gateTypeGiven) model->MOS1gateType=1;
if(model->MOS1gateType != 0) {
fermig = model->MOS1type *model->MOS1gateType*.5*egfet1;
wkfng = 3.25 + .5 * egfet1 - fermig;
}
wkfngs = wkfng - (3.25 + .5 * egfet1 +fermis);
if(!model->MOS1gammaGiven) {
model->MOS1gamma = sqrt(2 * 11.70 * 8.854214871e-12 *
CHARGE * model->MOS1substrateDoping*
1e6/*(cm**3/m**3)*/)/
model->MOS1oxideCapFactor;
}
if(!model->MOS1vt0Given) {
if(!model->MOS1surfaceStateDensityGiven)
model->MOS1surfaceStateDensity=0;
vfb = wkfngs -
model->MOS1surfaceStateDensity *
1e4 /*(cm**2/m**2)*/ *
CHARGE/model->MOS1oxideCapFactor;
model->MOS1vt0 = vfb + model->MOS1type *
(model->MOS1gamma * sqrt(model->MOS1phi)+
model->MOS1phi);
}
} else {
model->MOS1substrateDoping = 0;
(*(SPfrontEnd->IFerror))(ERR_FATAL,
"%s: Nsub < Ni",&model->MOS1modName);
return(E_BADPARM);
}
}
}
/* loop through all instances of the model */
for(here = model->MOS1instances; here!= NULL;
here = here->MOS1nextInstance) {
double czbd; /* zero voltage bulk-drain capacitance */
double czbdsw; /* zero voltage bulk-drain sidewall capacitance */
double czbs; /* zero voltage bulk-source capacitance */
double czbssw; /* zero voltage bulk-source sidewall capacitance */
double arg; /* 1 - fc */
double sarg; /* (1-fc) ^^ (-mj) */
double sargsw; /* (1-fc) ^^ (-mjsw) */
if (here->MOS1owner != ARCHme) continue;
/* perform the parameter defaulting */
if(!here->MOS1tempGiven) {
here->MOS1temp = ckt->CKTtemp;
}
vt = here->MOS1temp * CONSTKoverQ;
ratio = here->MOS1temp/model->MOS1tnom;
fact2 = here->MOS1temp/REFTEMP;
kt = here->MOS1temp * CONSTboltz;
egfet = 1.16-(7.02e-4*here->MOS1temp*here->MOS1temp)/
(here->MOS1temp+1108);
arg = -egfet/(kt+kt)+1.1150877/(CONSTboltz*(REFTEMP+REFTEMP));
pbfact = -2*vt *(1.5*log(fact2)+CHARGE*arg);
if(!here->MOS1drainAreaGiven) {
here->MOS1drainArea = ckt->CKTdefaultMosAD;
}
if(!here->MOS1lGiven) {
here->MOS1l = ckt->CKTdefaultMosL;
}
if(!here->MOS1sourceAreaGiven) {
here->MOS1sourceArea = ckt->CKTdefaultMosAS;
}
if(!here->MOS1wGiven) {
here->MOS1w = ckt->CKTdefaultMosW;
}
if(here->MOS1l - 2 * model->MOS1latDiff <=0) {
(*(SPfrontEnd->IFerror))(ERR_WARNING,
"%s: effective channel length less than zero",
&(model->MOS1modName));
}
ratio4 = ratio * sqrt(ratio);
here->MOS1tTransconductance = model->MOS1transconductance / ratio4;
here->MOS1tSurfMob = model->MOS1surfaceMobility/ratio4;
phio= (model->MOS1phi-pbfact1)/fact1;
here->MOS1tPhi = fact2 * phio + pbfact;
here->MOS1tVbi =
model->MOS1vt0 - model->MOS1type *
(model->MOS1gamma* sqrt(model->MOS1phi))
+.5*(egfet1-egfet)
+ model->MOS1type*.5* (here->MOS1tPhi-model->MOS1phi);
here->MOS1tVto = here->MOS1tVbi + model->MOS1type *
model->MOS1gamma * sqrt(here->MOS1tPhi);
here->MOS1tSatCur = model->MOS1jctSatCur*
exp(-egfet/vt+egfet1/vtnom);
here->MOS1tSatCurDens = model->MOS1jctSatCurDensity *
exp(-egfet/vt+egfet1/vtnom);
pbo = (model->MOS1bulkJctPotential - pbfact1)/fact1;
gmaold = (model->MOS1bulkJctPotential-pbo)/pbo;
capfact = 1/(1+model->MOS1bulkJctBotGradingCoeff*
(4e-4*(model->MOS1tnom-REFTEMP)-gmaold));
here->MOS1tCbd = model->MOS1capBD * capfact;
here->MOS1tCbs = model->MOS1capBS * capfact;
here->MOS1tCj = model->MOS1bulkCapFactor * capfact;
capfact = 1/(1+model->MOS1bulkJctSideGradingCoeff*
(4e-4*(model->MOS1tnom-REFTEMP)-gmaold));
here->MOS1tCjsw = model->MOS1sideWallCapFactor * capfact;
here->MOS1tBulkPot = fact2 * pbo+pbfact;
gmanew = (here->MOS1tBulkPot-pbo)/pbo;
capfact = (1+model->MOS1bulkJctBotGradingCoeff*
(4e-4*(here->MOS1temp-REFTEMP)-gmanew));
here->MOS1tCbd *= capfact;
here->MOS1tCbs *= capfact;
here->MOS1tCj *= capfact;
capfact = (1+model->MOS1bulkJctSideGradingCoeff*
(4e-4*(here->MOS1temp-REFTEMP)-gmanew));
here->MOS1tCjsw *= capfact;
here->MOS1tDepCap = model->MOS1fwdCapDepCoeff * here->MOS1tBulkPot;
if( (here->MOS1tSatCurDens == 0) ||
(here->MOS1drainArea == 0) ||
(here->MOS1sourceArea == 0) ) {
here->MOS1sourceVcrit = here->MOS1drainVcrit =
vt*log(vt/(CONSTroot2*here->MOS1tSatCur));
} else {
here->MOS1drainVcrit =
vt * log( vt / (CONSTroot2 *
here->MOS1tSatCurDens * here->MOS1drainArea));
here->MOS1sourceVcrit =
vt * log( vt / (CONSTroot2 *
here->MOS1tSatCurDens * here->MOS1sourceArea));
}
if(model->MOS1capBDGiven) {
czbd = here->MOS1tCbd;
} else {
if(model->MOS1bulkCapFactorGiven) {
czbd=here->MOS1tCj*here->MOS1drainArea;
} else {
czbd=0;
}
}
if(model->MOS1sideWallCapFactorGiven) {
czbdsw= here->MOS1tCjsw * here->MOS1drainPerimiter;
} else {
czbdsw=0;
}
arg = 1-model->MOS1fwdCapDepCoeff;
sarg = exp( (-model->MOS1bulkJctBotGradingCoeff) * log(arg) );
sargsw = exp( (-model->MOS1bulkJctSideGradingCoeff) * log(arg) );
here->MOS1Cbd = czbd;
here->MOS1Cbdsw = czbdsw;
here->MOS1f2d = czbd*(1-model->MOS1fwdCapDepCoeff*
(1+model->MOS1bulkJctBotGradingCoeff))* sarg/arg
+ czbdsw*(1-model->MOS1fwdCapDepCoeff*
(1+model->MOS1bulkJctSideGradingCoeff))*
sargsw/arg;
here->MOS1f3d = czbd * model->MOS1bulkJctBotGradingCoeff * sarg/arg/
here->MOS1tBulkPot
+ czbdsw * model->MOS1bulkJctSideGradingCoeff * sargsw/arg /
here->MOS1tBulkPot;
here->MOS1f4d = czbd*here->MOS1tBulkPot*(1-arg*sarg)/
(1-model->MOS1bulkJctBotGradingCoeff)
+ czbdsw*here->MOS1tBulkPot*(1-arg*sargsw)/
(1-model->MOS1bulkJctSideGradingCoeff)
-here->MOS1f3d/2*
(here->MOS1tDepCap*here->MOS1tDepCap)
-here->MOS1tDepCap * here->MOS1f2d;
if(model->MOS1capBSGiven) {
czbs=here->MOS1tCbs;
} else {
if(model->MOS1bulkCapFactorGiven) {
czbs=here->MOS1tCj*here->MOS1sourceArea;
} else {
czbs=0;
}
}
if(model->MOS1sideWallCapFactorGiven) {
czbssw = here->MOS1tCjsw * here->MOS1sourcePerimiter;
} else {
czbssw=0;
}
arg = 1-model->MOS1fwdCapDepCoeff;
sarg = exp( (-model->MOS1bulkJctBotGradingCoeff) * log(arg) );
sargsw = exp( (-model->MOS1bulkJctSideGradingCoeff) * log(arg) );
here->MOS1Cbs = czbs;
here->MOS1Cbssw = czbssw;
here->MOS1f2s = czbs*(1-model->MOS1fwdCapDepCoeff*
(1+model->MOS1bulkJctBotGradingCoeff))* sarg/arg
+ czbssw*(1-model->MOS1fwdCapDepCoeff*
(1+model->MOS1bulkJctSideGradingCoeff))*
sargsw/arg;
here->MOS1f3s = czbs * model->MOS1bulkJctBotGradingCoeff * sarg/arg/
here->MOS1tBulkPot
+ czbssw * model->MOS1bulkJctSideGradingCoeff * sargsw/arg /
here->MOS1tBulkPot;
here->MOS1f4s = czbs*here->MOS1tBulkPot*(1-arg*sarg)/
(1-model->MOS1bulkJctBotGradingCoeff)
+ czbssw*here->MOS1tBulkPot*(1-arg*sargsw)/
(1-model->MOS1bulkJctSideGradingCoeff)
-here->MOS1f3s/2*
(here->MOS1tDepCap*here->MOS1tDepCap)
-here->MOS1tDepCap * here->MOS1f2s;
if(model->MOS1drainResistanceGiven) {
if(model->MOS1drainResistance != 0) {
here->MOS1drainConductance = 1/model->MOS1drainResistance;
} else {
here->MOS1drainConductance = 0;
}
} else if (model->MOS1sheetResistanceGiven) {
if(model->MOS1sheetResistance != 0) {
here->MOS1drainConductance =
1/(model->MOS1sheetResistance*here->MOS1drainSquares);
} else {
here->MOS1drainConductance = 0;
}
} else {
here->MOS1drainConductance = 0;
}
if(model->MOS1sourceResistanceGiven) {
if(model->MOS1sourceResistance != 0) {
here->MOS1sourceConductance = 1/model->MOS1sourceResistance;
} else {
here->MOS1sourceConductance = 0;
}
} else if (model->MOS1sheetResistanceGiven) {
if(model->MOS1sheetResistance != 0) {
here->MOS1sourceConductance =
1/(model->MOS1sheetResistance*here->MOS1sourceSquares);
} else {
here->MOS1sourceConductance = 0;
}
} else {
here->MOS1sourceConductance = 0;
}
}
}
return(OK);
}
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