Sze_Physics of Semiconductor Devices_2007
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Li Sb P |
As Bi Me. 0 Fe Ta Pb Te N W Cr C Sn K Ge Ti Sr Cs Se Ba S MoMn V Si Na |
E C |
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0 . 0 8 |
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.12 |
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2 ;?z 2 2 2 |
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0 |
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Si |
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.31 .32 .32 ,33 |
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z - - - |
.42 |
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I |
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0 |
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I- |
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.43 |
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1.12 eV |
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I |
' B 'y(Ga |
In T1 Be |
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Pd Ni Cu Cd Zn Co Pt Au Hg Ag E" |
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(4 |
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A
GaAs
1.42eV
1
Si Se Ge S Sn |
Te 0 |
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. O r 8 . O r 9 . 5 6 . 5 6 . c 6 |
5 |
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.4 |
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I |
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.63 |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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2 |
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- |
CI |
.I67 |
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.52 |
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.44 |
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CI |
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.16 |
2 |
.24 |
3 7 |
.17 |
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=19 |
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.%6 |
.E8 |
.%8 |
Go4 |
'g5''O |
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, 1 4 0 ' |
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-.023 |
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CI |
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.025 |
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C |
Be |
Mg |
Zn Cd Li Ge Au Mn Ag Pb Co |
Ni |
Cu |
Fe Cr |
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(b)
Fig. 10 Measured ionization energies for varies impurities in (a) Si and (b) GaAs. Levels below the gap center are measured from E , Levels above the gap center are measured from E,. Solid bars represent donor levels and hollow boxes represent acceptor levels. (After Refs. 29,31,
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34, and 35.) |
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