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10.Oscillators and harmonic generators

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INJECTION-LOCKED OSCILLATORS

215

The amplitude of the current at the free running point is A0 and the relative phase between the voltage and current is -. Hence

Z ω

D

Z

A

 

jVj

e j-

10.61

 

 

 

d

 

C A0

 

Up to this point the passive impedance has been left rather general. As a specific example, the circuit can be considered to be a high-Q series resonant circuit determined by its inductance and capacitance together with some cavity losses, RC, and a load resistance, RL:

1

Z ω D j ωL

 

C RC C RL

10.62

ωC

Since ω is close to the circuit resonant frequency ω0,

 

 

L

 

 

Z ω D j

 

ω2 ω02 C RC C RL

 

ω

 

³ j2L ωm C RC C RL

10.63

where ωm D ω ωm.

Equation (10.61) represented in Fig. 10.14 is a modification of that shown in Fig. 10.13 for the free running oscillator case. If the magnitude of the injection voltage, V, remains constant, then the constant magnitude vector, jVj/A0, which must stay in contact with both the device and circuit impedance lines,

Z (ω )

ω1

V

θ A 0

2L ω m

Z d(A )

ω2

FIGURE 10.14 Injection-locked frequency range.

216 OSCILLATORS AND HARMONIC GENERATORS

will change its orientation as the injection frequency changes (thereby changing Z ω ). However, there is a limit to how much the jVj/A0 vector can move because circuit and device impedances grow too far apart. In that case the injection lock ceases. The example in Fig. 10.14 is illustrated the simple series-resonant cavity where the circuit resistance is independent of frequency. Furthermore the jVj/A0 vector is drawn at the point of maximum frequency excursion from ω0. Here jVj/A0 is orthogonal to the Zd A line. If the frequency moves beyond ω1 or ω2, the oscillator loses lock with the injected signal. At the maximum locking frequency,

j

2 ω

m

L cos 2

j D

jVj

10.64

A0

 

 

 

The expressions for the oscillator power delivered to the load, P0, the available injected power, and the external circuit Qext are

P0 D

1

RLA02

10.65

2

P

jVj2

 

10.66

8RL

i D

 

Qext ³

ω0L

10.67

RL

 

When these are substituted into Eq. (10.64), the well-known injection locking range is found [7]:

ωm D Qext

 

 

P0

 

cos 2

10.68

 

ω0

 

 

Pi

1

 

The total locking range is from ω0 C ωm to ω0 ωm. The expression originally given by Adler [8] did not included the cos 2 term. However, highfrequency devices often exhibit a phase delay of the RF current with respect to the voltage. This led to Eq. (10.68) where the device and circuit impedance lines are not necessarily orthogonal [7]. In the absence of information about the value of 2, a conservative approximation for the injection range can be made by choosing cos 2 D 1. The frequency range over which the oscillator frequency can be pulled from its free-running frequency is proportional to the square root of the injected power and inversely proportional to the circuit Q as might be expected intuitively.

10.9HARMONIC GENERATORS

The nonlinearity of a resistance in a diode can be used in mixers to produce a sum and difference of two input frequencies (see Chapter 11). If a large signal is applied to a diode, the nonlinear resistance can produce harmonics of the input

HARMONIC GENERATORS

217

voltage. However, the efficiency of the nonlinear resistance can be no greater than 1/n, where n is the order of the harmonic. Nevertheless, a reverse-biased diode has a depletion elastance (reciprocal capacitance) given by

dv

1

v

 

5

 

D S D S0

 

10.69

dq

-

where - is the built-in voltage and typically is between 0.5 and 1 volt positive. The applied voltage v is considered positive when the diode is forward biased. The exponent 5 for a varactor diode typically ranges from 0 for a step recovery diode to 13 for a graded junction diode to 12 for an abrupt junction diode. Using the nonlinear capacitance of a diode theoretically allows for generation of harmonics with an efficiency of 100% with a loss free diode. This assertion is supported by the Manley-Rowe relations which describe the power balance when two frequencies, f1 and f2, along with their harmonics are present in a lossless circuit:

1

 

1

mPm,n

 

 

 

 

D 0

10.70

m

0 n

D 1

mf1 C nf2

D

 

 

 

 

1

 

1

nPm,n

 

 

 

 

D 0

10.71

n 0 m

D 1

mf1 C nf2

D

 

 

 

 

These equations are basically an expression of the conservation of energy. From (10.70)

1

 

 

 

P1 D Pm,0, n D 0

10.72

mD2

The depletion elastance given by Eq. (10.69) is valid for forward voltages up to about v/- D 12 . Under forward bias, the diode will tend to exhibit diffusion capacitance that tends to be more lossy in varactor diodes than the depletion capacitance associated with reverse-biased diodes. Notwithstanding these complexities, an analysis of harmonic generators will be based on Eq. (10.69) for all applied voltages up to v D -. This is a reasonably good approximation when the minority carrier lifetime is long relative to the period of the oscillation. The maximum elastance (minimum capacitance) will occur at the reverse break down voltage, VB. The simplified model for the diode then is defined by two voltage ranges:

S- v 5

 

D

 

, v -

10.73

Smax

- VB

S

D 0,

v > -

10.74

Smax

218 OSCILLATORS AND HARMONIC GENERATORS

Integration of Eq. (10.69) gives

 

 

 

 

 

 

 

 

-

- d 1 v/-

 

S

 

q-

dq

10.75

 

 

D

0 q

v 1 v/-

 

 

 

 

 

- v 1 5

D

S

0

q

q

10.76

 

 

 

1

 

5

 

-

 

 

 

 

 

 

 

 

 

 

 

 

This can be evaluated at the breakdown point where v D VB and q D QB. Taking the ratio of this with Eq. (10.76) gives the voltage and charge relative to that at the breakdown point:

-

v

 

q q

 

1/ 1 5

 

 

 

D

-

 

10.77

-

 

VB

q- QB

 

 

 

 

 

For the abrupt junction diode where 5 D 12 , it can be that it is possible to produce power at mf1 when the input frequency is f1 except for m D 2 [9]. Higher-order terms require that the circuit support intermediate frequencies called idlers. While the circuit allows energy storage at the idler frequencies, no external currents can flow at these idler frequencies. Thus multiple lossless mixing can produce output power at mf1 with high efficiency when idler circuits are available.

Design of a varactor multiplier consists in predicting the input and output load impedances for maximum efficiency, the value of the efficiency, and the output power. A quantity called the drive, D, may be defined where qmax represents the maximum stored charge during the forward swing of the applied voltage:

D

D

qmax QB

10.78

q- QB

 

 

If qmax D q-, then D D 1. An important quality factor for a varactor diode is the cutoff frequency. This is related to the series loss, Rs, in the diode:

f

c D

Smax Smin

10.79

28Rs

 

 

When D ½ 1, Smin D 0. When fc/nf1 > 50, the tabulated values given in [10]† provide the necessary circuit parameters. These tables have been coded in the program MULTIPLY. The efficiency given by [10] assumes loss only in the diode where fout D mf1:

9 D e˛fout/fc

10.80

† Copyright 1965. AT&T. All rights reserved. Reprinted with permission.

HARMONIC GENERATORS

219

The output power at mf1 is found to be

P

ˇ

ω1 - VB 2

10.81

Smax

m D

 

 

The values of ˛ and ˇ are given in [9,10]. If the varactor has a dc bias voltage, Vo, then the normalized voltage is

V

o,norm D

- Vo

10.82

- VB

 

 

This value corresponds to the selected drive level. Finally, the input and load resistances are found from the tabulated values. The elastances at all supported harmonic frequencies up to and including m are also given. These values are useful for knowing how to reactively terminate the diode at the idler and output frequencies. A packaged diode will have package parasitic circuit elements, as shown in Fig. 10.15, that must be considered in design of a matching circuit. When given these package elements, the program MULTIPLY will find the appropriate matching impedances required external to the package. Following is an example run of MULTIPLY in the design of a 1–2–3–4 varactor quadrupler with an output frequency of 2 GHz. The bold numbers are user input values.

Input frequency, GHz. =

0.5

Diode Parameters Breakdown Voltage =

60

Built-in Potential phi =

0.5

Specify series resistance or cutoff frequency, Rs OR fc. <R/F>

f

Zero Bias cutoff frequency (GHz), fc =

50.

Junction capacitance at 0 volts (pF), Co =

0.5

C p

Rin

 

R s

 

Ls

C(v)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FIGURE 10.15 Intrinsic varactor diode with package.

220 OSCILLATORS AND HARMONIC GENERATORS

Package capacitance (pF), Series inductance (nH) =

0.1,

0.2

 

 

For a

Doubler Type A

For a

1-2-3 Tripler Type B

For a

1-2-4 Quadrupler Type C

For a

1-2-3-4 Quadrupler Type D

For a

1-2-4-5

Quintupler Type E

For a

1-2-4-6

Sextupler Type F

For a

1-2-4-8

Octupler Type G

For a

1-4

Quadrupler using a SRD, Type H

For a

1-6

Sextupler using a SRD, Type I

For a

1-8

Octupler using a SRD, Type J

Ctrl C to end d

Type G for Graded junction (Gamma = .3333) Type A Abrupt Junction (Gamma=.5)

Choose

G or A

 

g

 

 

 

 

Drive is

1.0< D < 1.6.

 

Linear extrapolation done for D outside this range.

Choose

drive.

 

2.0

 

 

 

 

Input Freq = 0.5000 GHz, Output Freq =

2.0000 GHz,

fc =

 

50.0000 GHz, Rs = 31.4878 Ohms.

 

Pout

=

 

78.50312 mWatt, Efficiency =

75.47767%

At Drive

2.00, DC Bias Voltage = -7.76833

Harmonic

elastance values

 

S0( 1)

=

0.197844E+13

 

S0( 2)

=

0.313252E+13

 

S0( 3)

=

0.296765E+13

 

S0( 4)

=

0.263791E+13

 

Total Capacitance with package cap.

 

CT0(

1) =

0.605450E-12

 

CT0(

2) =

0.419232E-12

 

CT0(

3) =

0.436967E-12

 

CT0(

4) =

0.479087E-12

 

Inside package, Rin

=

643.400

RL = 346.470

Diode model Series Ls, Rin+Rs, S(v) shunted by Cp

Required impedances outside package.

 

Zin =

456.218

+

j -606.069

 

Zout =

208.267

 

+ j -242.991

 

Match these impedances with their

complex conjugate

Match

idler

2

with conjugate

of

0

+

j

-379.181

Match

idler

3

with conjugate

of

0

+

j

-242.125

REFERENCES 221

PROBLEMS

10.1In Appendix D derive (D.9) from (D.10).

10.2In Appendix E derive the common gate S parameters from the presumably known three-port S parameters.

10.3Prove the stability factor S0 is that given in Eq. (10.59).

10.4 The

measurements of a certain active

device as a function of

current give Zd 10 mA D 20 C j30 and Zd 50 mA D 10 C j15 .

The

passive circuit to which this is

connected is measured at

two frequencies: Zc 800 MHz D 12 j10 and Zc 1000 MHz D 18 j40 . Determine whether the oscillator will be stable in the given ranges of frequency and current amplitude. Assume that the linear interpolation between the given values is justified.

REFERENCES

1.J. K. Clapp, “An Inductance-Capacitance Oscillator of Unusual Frequency Stability,” Proc. IRE, Vol. 36, pp. 356–358, 1948.

2.J. K. Clapp, “Frequency Stable LC Oscillators” Proc. IRE, Vol. 42, pp. 1295–1300, 1954.

3.J. Vackar, “LC Oscillators and Their Frequency Stability,” Telsa Tech. Reports, Czechoslovakia, pp. 1–9, 1949.

4.A. R. Hambley, Electronics: A Top–Down Approach to Computer-Aided Circuit Design, New York: Macmillan, 1994, p. 959.

5.W. K. Chen, Active Network and Feedback Amplifier Theory, New York: McGrawHill, 1980.

6.K. Kurokawa, “Some Basic Characteristics of Broadband Negative Resistance Oscillator Circuits,” Bell Syst. Tech. J., Vol. 48, pp. 1937–1955, 1969.

7.R. Adler, “A Study of Locking Phenomena in Oscillators,” Proc. IRE., Vol. 22, pp. 351–357, 1946.

8.K. Kurokawa, “Injection Locking of Microwave Solid-State Oscillators,” Proc. IEEE, Vol. 61, pp. 1386–1410, 1973.

9.M. Uenohara and J. W. Gewartowski, “Varactor Applications,” in H. A. Watson, ed., Microwave Semiconductor Devices and Their Circuit Applications, New York: McGraw-Hill, 1969, pp. 194–270.

10.C. B. Burckhardt, “Analysis of Varactor Frequency Multipliers for Arbitrary Capacitance Variation and Drive Level,” Bell Syst. Tech. J., Vol. 44, pp. 675–692, 1965.