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Table 95.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Parallel Programming Characteristics, VCC = 5V ± 10%

(Continued)

 

Symbol

 

Parameter

Min

 

Typ

Max

Units

 

 

 

 

 

 

 

 

 

tBVDV

 

 

BS1 Valid to DATA valid

0

 

 

250

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOLDV

 

 

OE Low to DATA Valid

 

 

 

250

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tOHDZ

 

 

OE High to DATA Tri-stated

 

 

 

250

ns

Notes: 1. tWLRH is valid for the Write Flash, Write EEPROM, Write Fuse Bits and Write Lock

Bits commands.

2.tWLRH_CE is valid for the Chip Erase command.

Serial Downloading

Both the Flash and EEPROM memory arrays can be programmed using the serial SPI

 

bus while RESET is pulled to GND. The serial interface consists of pins SCK, MOSI

 

(input) and MISO (output). After RESET is set low, the Programming Enable instruction

 

needs to be executed first before program/erase operations can be executed. NOTE, in

 

Table 96 on page 232, the pin mapping for SPI programming is listed. Not all parts use

 

the SPI pins dedicated for the internal SPI interface.

Serial Programming Pin

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mapping

Table 96. Pin Mapping Serial Programming

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Symbol

 

 

Pins

 

 

 

I/O

 

 

Description

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MOSI

 

 

PB3

 

 

 

I

 

 

Serial data in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

MISO

 

 

PB4

 

 

 

O

 

 

Serial data out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCK

 

 

PB5

 

 

 

I

 

 

Serial clock

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure 112. Serial Programming and Verify(1)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+2.7 - 5.5V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC

 

 

 

 

MOSI

 

 

 

 

 

 

 

 

PB3

 

 

+2.7 - 5.5V (2)

 

 

 

 

 

 

 

 

 

 

 

 

MISO

 

 

 

PB4

AVCC

 

 

 

 

 

 

 

 

 

 

SCK

 

 

 

 

 

 

 

 

PB5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

XTAL1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RESET

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GND

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes: 1. If the device is clocked by the Internal Oscillator, it is no need to connect a clock source to the XTAL1 pin.

2. VCC - 0.3 < AVCC < VCC + 0.3, however, AVCC should always be within 2.7 - 5.5V.

When programming the EEPROM, an auto-erase cycle is built into the self-timed programming operation (in the Serial mode ONLY) and there is no need to first execute the Chip Erase instruction. The Chip Erase operation turns the content of every memory location in both the Program and EEPROM arrays into 0xFF.

Depending on CKSEL Fuses, a valid clock must be present. The minimum low and high periods for the Serial Clock (SCK) input are defined as follows:

232 ATmega8(L)

2486M–AVR–12/03

ATmega8(L)

Serial Programming

Algorithm

Low:> 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck 12 MHz High:> 2 CPU clock cycles for fck < 12 MHz, 3 CPU clock cycles for fck 12 MHz

When writing serial data to the ATmega8, data is clocked on the rising edge of SCK.

When reading data from the ATmega8, data is clocked on the falling edge of SCK. See Figure 113 for timing details.

To program and verify the ATmega8 in the Serial Programming mode, the following sequence is recommended (See four byte instruction formats in Table 98):

1.Power-up sequence:

Apply power between VCC and GND while RESET and SCK are set to “0”. In some systems, the programmer can not guarantee that SCK is held low during Power-up. In this case, RESET must be given a positive pulse of at least two CPU clock cycles duration after SCK has been set to “0”.

2.Wait for at least 20 ms and enable Serial Programming by sending the Programming Enable serial instruction to pin MOSI.

3.The Serial Programming instructions will not work if the communication is out of synchronization. When in sync. the second byte (0x53), will echo back when issuing the third byte of the Programming Enable instruction. Whether the echo is correct or not, all four bytes of the instruction must be transmitted. If the 0x53 did not echo back, give RESET a positive pulse and issue a new Programming Enable command.

4.The Flash is programmed one page at a time. The page size is found in Table 93 on page 224. The memory page is loaded one byte at a time by supplying the 5 LSB of the address and data together with the Load Program memory Page instruction. To ensure correct loading of the page, the data Low byte must be loaded before data High byte is applied for a given address. The Program memory Page is stored by loading the Write Program memory Page instruction with the 7 MSB of the address. If polling is not used, the user must wait at least tWD_FLASH before issuing the next page. (See Table 97).

Note: If other commands than polling (read) are applied before any write operation (FLASH, EEPROM, Lock Bits, Fuses) is completed, it may result in incorrect programming.

5.The EEPROM array is programmed one byte at a time by supplying the address and data together with the appropriate Write instruction. An EEPROM memory location is first automatically erased before new data is written. If polling is not

used, the user must wait at least tWD_EEPROM before issuing the next byte. (See Table 97). In a chip erased device, no 0xFFs in the data file(s) need to be programmed.

6.Any memory location can be verified by using the Read instruction which returns the content at the selected address at serial output MISO.

7.At the end of the programming session, RESET can be set high to commence normal operation.

8.Power-off sequence (if needed): Set RESET to “1”.

Turn VCC power off

233

2486M–AVR–12/03

Data Polling Flash

 

 

 

 

 

 

 

 

 

 

 

 

When a page is being programmed into the Flash, reading an address location within

 

the page being programmed will give the value 0xFF. At the time the device is ready for

 

a new page, the programmed value will read correctly. This is used to determine when

 

the next page can be written. Note that the entire page is written simultaneously and any

 

address within the page can be used for polling. Data polling of the Flash will not work

 

for the value 0xFF, so when programming this value, the user will have to wait for at

 

least tWD_FLASH before programming the next page. As a chip-erased device contains

 

0xFF in all locations, programming of addresses that are meant to contain 0xFF, can be

 

skipped. See Table 97 for tWD_FLASH value.

Data Polling EEPROM

When a new byte has been written and is being programmed into EEPROM, reading the

 

address location being programmed will give the value 0xFF. At the time the device is

 

ready for a new byte, the programmed value will read correctly. This is used to deter-

 

mine when the next byte can be written. This will not work for the value 0xFF, but the

 

user should have the following in mind: As a chip-erased device contains 0xFF in all

 

locations, programming of addresses that are meant to contain 0xFF, can be skipped.

 

This does not apply if the EEPROM is Re-programmed without chip-erasing the device.

 

In this case, data polling cannot be used for the value 0xFF, and the user will have to

 

wait at least tWD_EEPROM before programming the next byte. See Table 97 for tWD_EEPROM

 

value.

 

 

 

 

 

 

Table 97. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location

 

 

 

 

 

 

 

Symbol

 

 

 

Minimum Wait Delay

 

 

 

 

 

 

 

tWD_FUSE

 

 

 

4.5 ms

 

tWD_FLASH

 

 

 

4.5 ms

 

tWD_EEPROM

 

 

 

9.0 ms

 

tWD_ERASE

 

 

 

9.0 ms

Figure 113. Serial Programming Waveforms

SERIAL DATA INPUT

MSB

LSB

(MOSI)

 

 

SERIAL DATA OUTPUT

MSB

LSB

(MISO)

 

 

SERIAL CLOCK INPUT

 

 

(SCK)

 

 

SAMPLE

 

 

234 ATmega8(L)

2486M–AVR–12/03

 

 

 

 

 

 

 

 

ATmega8(L)

 

 

 

 

 

 

 

 

 

Table 98. Serial Programming Instruction Set

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Instruction Format

 

 

 

 

 

 

 

 

 

 

 

 

Instruction

 

Byte 1

Byte 2

Byte 3

Byte4

Operation

 

 

 

 

 

 

 

 

 

Programming Enable

 

1010 1100

0101 0011

xxxx xxxx

xxxx xxxx

Enable Serial Programming after

 

 

 

 

 

 

 

RESET goes low.

 

 

 

 

 

 

 

 

 

Chip Erase

 

1010 1100

100x xxxx

xxxx xxxx

xxxx xxxx

Chip Erase EEPROM and Flash.

 

 

 

 

 

 

 

 

 

Read Program Memory

 

0010 H000

0000 aaaa

bbbb bbbb

oooo oooo

Read H (high or low) data o from

 

 

 

 

 

 

 

Program memory at word address

 

 

 

 

 

 

 

a:b.

 

 

 

 

 

 

 

 

 

Load Program Memory

 

0100 H000

0000 xxxx

xxxb bbbb

iiii iiii

Write H (high or low) data i to

 

Page

 

 

 

 

 

Program memory page at word

 

 

 

 

 

 

 

address b. Data Low byte must be

 

 

 

 

 

 

 

loaded before Data High byte is

 

 

 

 

 

 

 

applied within the same address.

 

 

 

 

 

 

 

 

 

Write Program Memory

 

0100 1100

0000 aaaa

bbbx xxxx

xxxx xxxx

Write Program memory Page at

 

Page

 

 

 

 

 

address a:b.

 

 

 

 

 

 

 

 

 

Read EEPROM Memory

 

1010 0000

00xx xxxa

bbbb bbbb

oooo oooo

Read data o from EEPROM

 

 

 

 

 

 

 

memory at address a:b.

 

 

 

 

 

 

 

 

 

Write EEPROM Memory

 

1100 0000

00xx xxxa

bbbb bbbb

iiii iiii

Write data i to EEPROM memory at

 

 

 

 

 

 

 

address a:b.

 

 

 

 

 

 

 

 

 

Read Lock Bits

 

0101 1000

0000 0000

xxxx xxxx

xxoo oooo

Read Lock Bits. “0” = programmed,

 

 

 

 

 

 

 

“1” = unprogrammed. See Table

 

 

 

 

 

 

 

85 on page 219 for details.

 

 

 

 

 

 

 

 

 

Write Lock Bits

 

1010 1100

111x xxxx

xxxx xxxx

11ii iiii

Write Lock Bits. Set bits = “0” to

 

 

 

 

 

 

 

program Lock Bits. See Table 85

 

 

 

 

 

 

 

on page 219 for details.

 

 

 

 

 

 

 

 

 

Read Signature Byte

 

0011 0000

00xx xxxx

xxxx xxbb

oooo oooo

Read Signature Byte o at address

 

 

 

 

 

 

 

b.

 

 

 

 

 

 

 

 

 

Write Fuse Bits

 

1010 1100

1010 0000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

 

 

 

 

 

 

 

unprogram. See Table 88 on

 

 

 

 

 

 

 

page 221 for details.

 

 

 

 

 

 

 

 

 

Write Fuse High Bits

 

1010 1100

1010 1000

xxxx xxxx

iiii iiii

Set bits = “0” to program, “1” to

 

 

 

 

 

 

 

unprogram. See Table 87 on

 

 

 

 

 

 

 

page 220 for details.

 

 

 

 

 

 

 

 

 

Read Fuse Bits

 

0101 0000

0000 0000

xxxx xxxx

oooo oooo

Read Fuse Bits. “0” = programmed,

 

 

 

 

 

 

 

“1” = unprogrammed. See Table

 

 

 

 

 

 

 

88 on page 221 for details.

 

 

 

 

 

 

 

 

 

Read Fuse High Bits

 

0101 1000

0000 1000

xxxx xxxx

oooo oooo

Read Fuse high bits. “0” = pro-

 

 

 

 

 

 

 

grammed, “1” = unprogrammed.

 

 

 

 

 

 

 

See Table 87 on page 220 for

 

 

 

 

 

 

 

details.

 

 

 

 

 

 

 

 

 

Read Calibration Byte

 

0011 1000

00xx xxxx

0000 00bb

oooo oooo

Read Calibration Byte

 

 

 

 

 

 

 

 

 

 

Note: a = address high bits

 

 

 

 

 

 

 

b = address low bits

 

 

 

 

 

 

H = 0 – Low byte, 1 – High byte o = data out

i = data in

x = don’t care

235

2486M–AVR–12/03

SPI Serial Programming

 

 

 

 

 

 

 

 

 

 

For characteristics of the SPI module, see “SPI Timing Characteristics” on page 241.

Characteristics

 

 

 

 

 

236 ATmega8(L)

2486M–AVR–12/03

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