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Предмет:
Файл:
ЭБНЭ_full
.pdf
Form pmos S/D
• Cover with photoresist
• Pattern photoresist
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– *PSELECT MASK |
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Implant p-type dopants |
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p+ dopant |
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Remove photoresist |
p+ dopant |
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POLY mask
Form nmos S/D |
NSELECT mask |
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Cover with photoresist |
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Pattern photoresist |
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p+ |
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p+ |
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– *NSELECT MASK |
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POLY mask
Form Contacts |
CONTACT mask |
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Deposit oxide |
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Deposit photoresist |
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Pattern photoresist |
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–*CONTACT Mask
–One mask for both active and poly contact shown
CONTACT mask
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