ЭБНЭ_full
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Form Active Regions
•Deposit SiN over wafer
•Deposit photoresist over SiN layer
ACTIVE mask |
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n-well |
photoresist |
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SiN |
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p-type substrate |
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ACTIVE mask |
Form Active Regions |
ACTIVE mask |
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• Deposit SiN over wafer |
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• |
Deposit photoresist over |
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SiN layer |
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n-well |
SiN |
photoresist |
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Pattern photoresist |
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– *ACTIVE MASK |
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p-type substrate |
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ACTIVE mask
Form Active Regions
•Deposit SiN over wafer
•Deposit photoresist over SiN layer
•Pattern photoresist
–*ACTIVE MASK
•Etch SiN in exposed areas
–leaves SiN mask which blocks oxide growth
n-well |
SiN |
photoresist |
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p-type substrate |
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ACTIVE mask |
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Form Active Regions
•Deposit SiN over wafer
•Deposit photoresist over SiN layer
•Pattern photoresist
–*ACTIVE MASK
•Etch SiN in exposed areas
–leaves SiN mask which blocks oxide growth
•Remove photoresist
•Grow Field Oxide (FOX)
–thermal oxidation
n-well |
FOX |
p-type substrate
ACTIVE mask
Form Active Regions
•Deposit SiN over wafer
•Deposit photoresist over SiN layer
•Pattern photoresist
–*ACTIVE MASK
•Etch SiN in exposed areas
–leaves SiN mask which blocks oxide growth
•Remove photoresist
•Grow Field Oxide (FOX)
–thermal oxidation
•Remove SiN
n-well |
FOX |
p-type substrate
ACTIVE mask
Form Gate (Poly layer)
•Grow thin Gate Oxide
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over entire wafer |
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– |
negligible effect on FOX |
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gate oxide |
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regions |
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Form Gate (Poly layer) |
POLY mask |
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• Grow thin Gate Oxide |
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– over entire wafer |
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– negligible effect on FOX |
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polysilicon |
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gate oxide |
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regions |
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•Deposit Polysilicon
•Deposit Photoresist
POLY mask
Form Gate (Poly layer) |
POLY mask |
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• Grow thin Gate Oxide |
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– over entire wafer
–negligible effect on FOX regions
•Deposit Polysilicon
•Deposit Photoresist
•Pattern Photoresist
–*POLY MASK
•Etch Poly in exposed areas
•Etch/remove Oxide
–gate protected by poly
gate oxide
POLY mask
Form Gate (Poly layer)
•Grow thin Gate Oxide
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over entire wafer |
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– |
negligible effect on FOX |
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gate oxide |
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regions |
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•Deposit Polysilicon
•Deposit Photoresist
•Pattern Photoresist
–*POLY MASK
•Etch Poly in exposed areas
•Etch/remove Oxide
–gate protected by poly
