- •Task №1
- •3. Evaluation of the tangential sensitivity of the detector diode
- •4. The main similarities and differences in the functional role, structure, and parameters of microwave devices numbered 1 (detector diode) and 2 (pin diode)
- •4.1 Detector diode
- •4.1.1 The functional role of the detector diode
- •4.1.2 Structure of the detector diode
- •4.1.3 Parameters of the detector diode
- •1. Volt-ampere characteristic:
- •2. Total resistance:
- •3. Cutoff frequency:
- •4. Current sensitivity:
- •5. Tangential sensitivity:
- •6. Noise ratio:
- •4.2 Pin diode
- •4.2.1 The functional role of the pin diode
- •4.2.2 Pin diode structure
- •4.2.3 Pin diode parameters
- •1. Volt-ampere characteristic:
- •2. Transmission and locking losses:
- •3. Quality coefficient:
- •4. Turn-on time of the pin diode:
- •5. Cutoff frequency:
- •4.3 Similarities and differences of the detector diode and pin diode
- •4.3.1 Differences between the detector diode and pin diode
- •4.3.2 Similarities of the detector diode and pin diode
- •5. Description of circuit models of microwave diodes with positive dynamic resistance
- •5.1 Description of the pin diode circuit model
- •5.2 Description of the mixer diode circuit model
- •Task №2 Diodes with negative dynamic resistance.
- •1.2 Gunn diode graphs (GaAs)
- •2. Representation of the device in the form of a layered structure with different differential mobility
- •2.1 Representation of the impatt diode in the form of a layered structure with different differential mobility
- •2.2 Representation of the Gunn diode in the form of a layered structure with different differential mobility
- •Task №3 Transistors.
- •1.2 Calculation of the gate length of a field-effect transistor
- •1.3 Analysis of the obtained results of calculating the thickness of the bipolar transistor base and the gate length of the field effect transistor
- •1.4 Calculation of the angle of flight of a bipolar transistor
- •1.5 Calculation of the angle of flight of a field-effect transistor
- •2.1 Advantages and disadvantages of hemt (High Electron Mobility Transistor)
- •2.2 Advantages and disadvantages of transistors with ballistic transport
- •2.3 Calculation of the thickness of the high-alloyed hemt region
- •3.1 GaN usage trend
- •3.2 InP usage trend
- •3.3 SiC usage trend
- •3.4 Diamond (c) usage trend
- •4.1 Input and output volt-ampere characteristics of three sbgfet with the same size, doping level, but made of Si, GaN, GaAs
- •4.2 How will the characteristics change if the gate width is increased
- •6. Connection of low-frequency noise with transistor manufacturing technology
- •7. Image of a low-signal equivalent Schottky-barrier transistor circuit. Explanation of how such a scheme is better or worse than s-parameters
3.2 InP usage trend
Indium phosphide (InP) is one of the most important semiconductors, due to the combination of a number of properties, namely:
1. High mobility of charge carriers (electron mobility 5000 cm2/V s);
2. High saturation velocity (2,2 105 m/s);
3. High dielectric constant (about 12,4);
4. The direct nature of inter-zone transitions.
The main advantage of this material is the ability to emit and receive at wavelengths of more than 1000 nm, which makes it very suitable for use in photonics. InP also provides high performance and low interference in the high-frequency field of radio engineering.
InP is used to implement high-speed microelectronics, and such semiconductor devices are the fastest devices available today. As a rule, microelectronics on InP is based on transistors with high electron mobility (HEMT) or bipolar transistors with heterostructure (HBT). The dimensions and volume of both transistors based on the InP material are very small, amounting to units of microns.
Indium phosphide (InP) transistors are used for the following [32]:
1. Wireless connection: 5G high-speed wireless communication develops InP technology due to its superior performance. Such systems operate at frequencies above 100 GHz to support high data transfer rates;
2. Biomedical applications: millimeter and terahertz spectrometers are used for diagnostics in medical applications, from the identification of cancerous tissues, the detection of diabetes to medical diagnostics using human exhaled air;
3. Robotics: Robotic vision is mainly based on high-resolution radar systems in millimeter waves;
4. Radiometric sensing: almost all components and pollutants in the atmosphere show characteristic absorption (emissions) in the microwave range. InP allows you to create small, lightweight and mobile systems for the identification of such substances.
Also, phosphide-indium (InP) Gunn diodes have advantages over gallium arsenide and (GaAs) Gunn diodes in terms of efficiency and in terms of the limiting frequency of generation. The upper limit of the operating frequency of Gunn diodes is approximately 150 GHz. Gunn generators made of gallium arsenide can generate microwave oscillations from 1 to 50 GHz. Somewhat higher frequencies are obtained on Gunn generators made of indium phosphide due to large values of maximum electron velocities.
Indium phosphide is also used for the production of efficient lasers, sensitive photodetectors and modulators in the wavelength range commonly used for telecommunications, that is, with wavelengths of 1550 nm, since it is a composite semiconductor material with a direct band gap. The wavelength between about 1510 nm and 1600 nm has the lowest attenuation available in an optical fiber (about 0,26 dB/km). InP is a commonly used material for generating laser signals, detecting and converting these signals back into electronic form [32].
Photovoltaic cells with a maximum efficiency of up to 46% use InP substrates to achieve an optimal combination of band gap width for efficient conversion of solar radiation into electrical energy. Today, only InP substrates achieve a permanent lattice for growing materials with a small band gap and high crystallization quality [32].