
- •Task №1
- •3. Evaluation of the tangential sensitivity of the detector diode
- •4. The main similarities and differences in the functional role, structure, and parameters of microwave devices numbered 1 (detector diode) and 2 (pin diode)
- •4.1 Detector diode
- •4.1.1 The functional role of the detector diode
- •4.1.2 Structure of the detector diode
- •4.1.3 Parameters of the detector diode
- •1. Volt-ampere characteristic:
- •2. Total resistance:
- •3. Cutoff frequency:
- •4. Current sensitivity:
- •5. Tangential sensitivity:
- •6. Noise ratio:
- •4.2 Pin diode
- •4.2.1 The functional role of the pin diode
- •4.2.2 Pin diode structure
- •4.2.3 Pin diode parameters
- •1. Volt-ampere characteristic:
- •2. Transmission and locking losses:
- •3. Quality coefficient:
- •4. Turn-on time of the pin diode:
- •5. Cutoff frequency:
- •4.3 Similarities and differences of the detector diode and pin diode
- •4.3.1 Differences between the detector diode and pin diode
- •4.3.2 Similarities of the detector diode and pin diode
- •5. Description of circuit models of microwave diodes with positive dynamic resistance
- •5.1 Description of the pin diode circuit model
- •5.2 Description of the mixer diode circuit model
- •Task №2 Diodes with negative dynamic resistance.
- •1.2 Gunn diode graphs (GaAs)
- •2. Representation of the device in the form of a layered structure with different differential mobility
- •2.1 Representation of the impatt diode in the form of a layered structure with different differential mobility
- •2.2 Representation of the Gunn diode in the form of a layered structure with different differential mobility
- •Task №3 Transistors.
- •1.2 Calculation of the gate length of a field-effect transistor
- •1.3 Analysis of the obtained results of calculating the thickness of the bipolar transistor base and the gate length of the field effect transistor
- •1.4 Calculation of the angle of flight of a bipolar transistor
- •1.5 Calculation of the angle of flight of a field-effect transistor
- •2.1 Advantages and disadvantages of hemt (High Electron Mobility Transistor)
- •2.2 Advantages and disadvantages of transistors with ballistic transport
- •2.3 Calculation of the thickness of the high-alloyed hemt region
- •3.1 GaN usage trend
- •3.2 InP usage trend
- •3.3 SiC usage trend
- •3.4 Diamond (c) usage trend
- •4.1 Input and output volt-ampere characteristics of three sbgfet with the same size, doping level, but made of Si, GaN, GaAs
- •4.2 How will the characteristics change if the gate width is increased
- •6. Connection of low-frequency noise with transistor manufacturing technology
- •7. Image of a low-signal equivalent Schottky-barrier transistor circuit. Explanation of how such a scheme is better or worse than s-parameters
MINISTRY OF EDUCATION AND SCIENCE OF RUSSIA
SAINT PETERSBURG STATE ELECTROTECHNICAL UNIVERSITY
«LETI» N.A. V.I. ULYANOVA (LENINA)
Department of microwave electronics
9+0.5а=9.5 балл. Солидно!
REPORT
on individual homework №3
in the discipline «Microwave electronics»
Topic: Semiconductor devices
Student gr. 0207 _________________ Malikov B.I.
Teacher _________________ Ivanov V.A.
Saint Petersburg
2023
CONTENT
Task №1 …………………………………………………………………………... 3
Task №2 …………………………………………………………………………. 21
Task №3 …………………………………………………………………………. 32
List of used literature ……………………………………………………………. 61
Task №1
Diodes with positive dynamic resistance.
Calculate the current sensitivity of the DD with the coefficient of ideality
.
What will be the increment of current when applying microwave power to the diode
Estimate the tangential sensitivity (expressed in
), if the effective noise temperature of the diode is
, and the amplifier band
.
Describe the main similarities and differences in the functional role, structure, parameters of microwave devices with numbers:
1 and 3 for students with numbers Nstudent <= 5,
1 and 2 for students with numbers 6 <= Nstudent <=10,
1 and 4 for students with numbers 11 <= Nstudent <=15,
3 and 4 for students with numbers 16 <= Nstudent <=20.
3 and 2 for students with numbers Nstudent >= 21.
1.5. Describe the circuit models (not the application schemes!) microwave diodes with positive dynamic resistance (arbitrary choice), using available information sources Internet, lectures, AWR Microwave Office program, etc.
Given:
n = 1,85
Pmicro = 0,15 mW
Teff = 313 K
= 6 MHz
Solving:
1. Calculate the current sensitivity of the detector diode
The current
sensitivity of the detector diode is calculated using the following
formula, given that there is a limit on the maximum current
sensitivity for detector diodes
(
= 20 V-1)
[1]:
=
=
=
(1)
Hence, using the formula (1), we calculate the current sensitivity of the detector diode:
=
=
=
10,81 V-1
2. Calculate the increment of current when applying a microwave power of 0,15 mW to the diode
Let's write down an expression for the current sensitivity, given that the value of the current sensitivity is equal to the ratio of the rectified current increment to the value of the supplied microwave power [1]:
=
(2)
Then,
from formula (2), we express the value of the current increment
:
=
(3)
By the formula (3) we calculate the increment of the current:
=
= 10,81
0,15
10-3
= 1,622 mA
3. Evaluation of the tangential sensitivity of the detector diode
The tangential sensitivity of the detector diode is calculated by the following formula [1]:
=
10lg
(4)
We take into account that Pmin – the minimum value of the noise power, which is calculated by the Nyquist formula [2]:
Pmin
= Pn
= <
>R
= 4kTeff
(5)
where k = 1,38 10-23 J/K – Boltzmann constant.
From here, using the formula (5), we calculate the value of the noise power:
Pmin = Pn = < >R = 4kTeff = 4 1,38 10-23 313 6 106 = 1,037 10-13 W
Thus, the tangential sensitivity of the detector diode according to the formula (4) will be equal to:
= 10lg
=
10lg
=
99,84
dBm
4. The main similarities and differences in the functional role, structure, and parameters of microwave devices numbered 1 (detector diode) and 2 (pin diode)
4.1 Detector diode
4.1.1 The functional role of the detector diode
The main functional role of the detector diode is the conversion of weak microwave signals (order 102 106 W) in direct current or isolation (detection) of the low-frequency envelope of the signal. That is, the detector diode performs the function of an AC rectifier operating in the microwave range. At the same time, during detection, the rectifying property of the diode is used to isolate a lower frequency signal from amplitude-modulated microwave oscillations [3].