диафрагмированные волноводные фильтры / 72230e1b-a784-4f98-b036-71d1da262411

Kaddour, Darine

(LCIS (EA 3747), France) A

545

C Chipless RFID Temperature and Humidity Sensing (WeIF1-21)

Kadry, J.

(Intel, Israel) A

301

C A High-Performance Low Power Compact Wideband X-Band DCO Based on

Transformer Coupled Feedback (We1F-5)

Kahmen, Gerhard

(IHP, Germany) A

23

C A -115dBc/Hz Integrated Optoelectronic Oscillator in a BiCMOS Silicon Photonic

Technology (Tu1B-2)

Kalisch, H.

(RWTH Aachen University, Germany) A

519

C 3D Integrated 300◦C Tunable RF Oscillator Exploiting AlGaN/GaN HEMT for High

Temperature Applications (WeIF1-14)

Kamioka, Jun

(Mitsubishi Electric, Japan) A

835

C An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Kamo, Yoshitaka

(Mitsubishi Electric, Japan) A

835

C An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Kamrath, Fynn

(CAU, Germany) A

200

C Dual-Mode WR-3 Waveguide Filter with E-Plane Cut (Tu4B-5)

499

C Triple-Mode Bandpass Filter Based on TM Dielectric Rod Resonators (WeIF1-9)

Kanar, Tumay

(Renesas Electronics, USA) A

638

C A Reconfigurable Dual-Polarized 1024-Element Ka-Band SATCOM Transmit

Phased-Array with Large Scan Volume and +48dBW EIRP (WeIF1-48)

858

C A Dual-Polarized 1024-Element Ku-Band SATCOM Phased-Array with Embedded

Transmit Filter and >10 dB/K G/T (Th3D-2)

[Search]

A

B

C D E F G H I J K L M N O P Q R S T U V W X Y Z

Kaneko, Tomoya

(NEC, Japan) A

541

C

28GHz Distributed-MIMO Comprehensive Antenna Calibration for 5G Indoor Spatial

Division Multiplex (WeIF1-20)

Kantanen, M.

(VTT Technical Research Centre of Finland, Finland) A

645

C

A Full Ka-band Highly Linear E cient GaN-on-Si Resistive Mixer (WeIF1-50)

Kasamatsu, Akifumi

(NICT, Japan) A

458

C

A 213–233GHz ×9 Frequency Multiplier Chain with 4.1dBm Output Power in 40nm

Bulk CMOS (We3F-5)

705

C

A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

Kassis, Marco T.

(Cadence Design Systems, USA) A

(MWCL)

C

Parallel Non-Monte Carlo Transient Noise Simulation (Tu3A-4)

Kaynak, Mehmet

(IHP, Germany) A

319

C

High-Frequency Tellurene MOSFETs with Biased Contacts (We1G-6)

Kazda, Michael

(PTB, Germany) A

404

C

Referenced Frequency Ruler for the Phase Noise Analysis of Oscillators in the High

GHz Range (We3B-4)

Keller, Stacia

(University of California, Santa Barbara, USA) A

(MWCL)

C

6.2W/mm and Record 33.8% PAE at 94GHz from N-Polar GaN Deep Recess MIS-HEMTs

with ALD Ru Gates (We2F-3)

Keseyan, George

(OEwaves, USA) A

538

C

Ultra-Wideband Photonic VCO and Synthesizer (WeIF1-19)

Ketterson, Andrew

(Qorvo, USA) A

772

C

A Baseband-65GHz High Linearity-Bandwidth GaN LNA Using a 1.7A/mm High

Current Density ScAlN Based GaN HEMT Technology (Th1F-4)

[Search]

A

B

C

D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 63 / 148]

Khandelwal, Sourabh

(Macquarie University, Australia) A

349

C

Accurate Non-Linear Large Signal Physics-Based Modeling for Ka-Band GaN Power

Amplifier Design with ASM-HEMT (We2D-1)

Khazaka, Roni

(McGill University, Canada) A

(MWCL)

C

Parallel Non-Monte Carlo Transient Noise Simulation (Tu3A-4)

Kibaroglu, Kerim

(University of California, San Diego, USA) A

854

C

A 5G 25–29GHz 64-Element Phased-Array with 49–52dBm EIRP, Integrated

Up/Down-Converter and On-Chip PLL (Th3D-1)

Kim, D.

(Akoustis, USA)

A

207

C

Wideband 6GHz RF Filters for Wi-Fi 6E Using a Unique BAW Process and Highly

Sc-Doped AlN Thin Film (Tu4C-1)

Kim, Hae-In

(University of Florida, USA)

A

323

C

Batch-Fabricated Substrate-Embedded Ka Band Self-Biased Circulators Using

Screen-Printed Strontium Hexaferrite/PDMS Composite (We2B-1)

689

C

Cu/Co Metaconductor Based Coplanar Waveguide with Sub 0.1dB/mm Insertion Loss

at 28GHz (WeIF1-64)

Kim, Jae-Sung

(Samsung, Korea) A

721

C

A 5G mm-Wave Single Chip 8-Channel FEM with Best-in-Class 22% Power E ciency

and Embedded Die Substrate (EDS) Technology (Th1B-5)

Kim, Jeong-Hoon

(Samsung, Korea) A

721

C

A 5G mm-Wave Single Chip 8-Channel FEM with Best-in-Class 22% Power E ciency

and Embedded Die Substrate (EDS) Technology (Th1B-5)

Kim, Se-Jong

(Samsung, Korea) A

721

C

A 5G mm-Wave Single Chip 8-Channel FEM with Best-in-Class 22% Power E ciency

and Embedded Die Substrate (EDS) Technology (Th1B-5)

[Search]

A

B

C D

E F G H I

J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 64 / 148]

Kim, Sunryoul

(Samsung, Korea) A

(MWCL)

C Asynchronous 256-Element Phased-Array Calibration for 5G Base Station (Th2A-4)

Kim, S.W.

(SAWNICS, Korea)

A

(MWCL)

C Novel Temperature-Compensated, Silicon SAW Design for Filter Integration (Tu4C-5)

Kim, Yonghoon

(Samsung, Korea)

A

(MWCL)

C Asynchronous 256-Element Phased-Array Calibration for 5G Base Station (Th2A-4)

Kimura, Makoto

(Mitsubishi Electric, Japan)

A

835

C An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

Kissinger, Dietmar

(Universität Ulm, Germany)

A

23

C A -115dBc/Hz Integrated Optoelectronic Oscillator in a BiCMOS Silicon Photonic

Technology (Tu1B-2)

(MWCL)

C A 440–540-GHz Transmitter in 130-nm SiGe BiCMOS (WeIF1-5)

839

C A 4-Channel V-Band Beamformer Featuring a Switchless PALNA for Scalable Phased

Array Systems (Th2F-4)

Kneuper, Pascal

(Universität Paderborn, Germany)

A

(MWCL)

C Silicon Photonic Radar Transmitter IC for mm-Wave Large Aperture MIMO Radar

Using Optical Clock Distribution (We1G-1)

Kobayashi, Kevin W.

(Qorvo, USA)

A

772

C A Baseband-65GHz High Linearity-Bandwidth GaN LNA Using a 1.7A/mm High

Current Density ScAlN Based GaN HEMT Technology (Th1F-4)

Koike, Shuhei

(Tokyo Tech, Japan)

A

799

C A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

Kolodziej, Kenneth E. (MIT Lincoln Laboratory, USA)

A

673

C Neural Network Tuning for Analog-RF Self-Interference Cancellation (WeIF1-59)

[Search]

A

B C

D E

F G

H I J

K

L

M

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IMS 2021 Detailed Author Index

[Page 65 / 148]

Koo, Hyungmo

(Sungkyunkwan University, Korea)

A

649

C Hybrid ET Supply Modulator IC with an Adaptive Quiescent Current Controller for its

Linear Amplifier (WeIF1-51)

Koos, Christian

(KIT, Germany)

A

390

C PAM-4 Driver Amplifier Using Distributed Power Combining (We2G-3)

Kopyt, P.

(Warsaw University of Technology, Poland)

A

226

C Measurements of Dielectric Materials of High Anisotropy Ratio with TM0n0 Cavity

(Tu4D-3)

Kordi, Behzad

(University of Manitoba, Canada) A

577

C High-Q Contactless Air-Filled Substrate-Integrated Waveguide (CLAF-SIW) Resonator

for Wireless Sensing Applications (WeIF1-30)

Korndörfer, Falk

(IHP, Germany)

A

(MWCL)

C Performance Comparison of Broadband Traveling Wave Amplifiers in 130-nm SiGe:C

SG13G2 and SG13G3 BiCMOS Technologies (Th1E-4)

Korpas, P.

(Warsaw University of Technology, Poland)

A

229

C Quantitative Error Metrics and Test Patterns for Enhanced Dielectric Resonator

Imaging of Microwave Materials (Tu4D-4)

Kosunen, Marko

(Aalto University, Finland)

A

784

C Characterization of an Antenna Cluster and Transmitter IC with a Modulated Signal

(Th2A-5)

Kouhalvandi, Lida

(Istanbul Technical University, Turkey)

A

233

C Multi-Objective E ciency and Phase Distortion Optimizations for Automated Design

of Power Amplifiers Through Deep Neural Networks (We1B-1)

Kowalewski, Mikael

(Saab, Sweden)

A

(MWCL)

C Instinctual Interference-Adaptive Low-Power Receiver with Combined Feedforward

and Feedback Control (We3G-1)

[Search]

A

B C

D E F G

H

I J

K L

M

N

O P Q R S T U V W X Y Z

Microwave Components (Tu1A-3)

237

C Constrained Surrogates and Dimensionality Reduction for Low-Cost Multi-Objective

Optimization of Compact Microwave Components (We1B-2)

Krause, S.

(FBH, Germany) A

515

C Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise

Amplifiers Under Input Overdrive (WeIF1-13)

Krozer, V.

(FBH, Germany) A

290

C High Conversion Gain Up-Converter with +5 dBm OP1dB in InP DHBT Technology for

Ultra Capacity Wireless Applications (We1F-2)

(MWCL)

C A Highly Linear Dual-Stage Amplifier with Beyond 1.75-THz Gain-Bandwidth Product

(Th1E-1)

Krupka, J.

(Warsaw University of Technology, Poland) A

226

C Measurements of Dielectric Materials of High Anisotropy Ratio with TM0n0 Cavity

(Tu4D-3)

Kruse, Stephan

(Universität Paderborn, Germany) A

(MWCL)

C Silicon Photonic Radar Transmitter IC for mm-Wave Large Aperture MIMO Radar

Using Optical Clock Distribution (We1G-1)

Kuan, Yen-Cheng

(NYCU, Taiwan) A

768

C A 0.6-V VDD, 3.8-dB Minimum Noise Figure, 19.5–62.5-GHz Low Noise Amplifier in

28-nm Bulk CMOS (Th1F-3)

Kubo, Shunichi

(THine Electronics, Japan) A

705

C A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

[Search]

A B

C D E F G H I J K L M N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 67 / 148]

Kumar, Anand

(ISRO, India)

A

266

C

Design & Development of 2KW Front-End Circulator-Switch Assembly for Space

Applications (We1D-4)

732

C

300W X-Band Solid State Power Amplifier Using Discrete GaN HEMT Devices with

Waveguide Interface (Th1C-3)

(MWCL)

C

Miniaturized High-Power Beam Steering Network Using Novel Nonplanar Waveguide

Butler Matrix (Th2A-1)

Kumar, Ashok

(ISRO, India)

A

(MWCL)

C

Miniaturized High-Power Beam Steering Network Using Novel Nonplanar Waveguide

Butler Matrix (Th2A-1)

Kumar, Vipan

(Qorvo, USA)

A

772

C

A Baseband-65GHz High Linearity-Bandwidth GaN LNA Using a 1.7A/mm High

Current Density ScAlN Based GaN HEMT Technology (Th1F-4)

Kuo, Chien-Nan

(NYCU, Taiwan) A

(MWCL)

C

A W-Band 1-dB Insertion Loss Wilkinson Power Divider Using Silicon-Based Integrated

Passive Device (We1C-1)

681

C

Active MMIC Transversal Filter-Based Negative Group Delay/Non-Foster Circuit in

Kurz, Heiko G.

0.1-μm GaAs pHEMT Technology (WeIF1-62)

(Volkswagen, Germany) A

(MWCL)

C

Silicon Photonic Radar Transmitter IC for mm-Wave Large Aperture MIMO Radar

Using Optical Clock Distribution (We1G-1)

Kuwabara, Toshihide

(NEC, Japan) A

541

C

28GHz Distributed-MIMO Comprehensive Antenna Calibration for 5G Indoor Spatial

Division Multiplex (WeIF1-20)

Kuwata, Eigo

(Mitsubishi Electric, Japan) A

835

C

An X-Band High Power Tile-Type GaN TR Module for Low-Profile AESA (Th2F-3)

[Search]

A

B C

D E

F G H I J K L M N O P Q R S T U V W X Y Z

[Search]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Lahbib, Imene

(X-FAB, France)

A

20

C

5.9–7.1GHz High-Linearity LNA Using Innovative 3D Device Level Co-Integration of

GaN HEMT and RF-SOI (Tu1B-1)

Landwehr, Matthias

(Fraunhofer IPMS, Germany)

A

(MWCL)

C

A 61-GHz Rectifier Using Internal Voltage Cancellation and Body-Biasing Techniques

in 22-nm FDSOI (We1E-4)

Laroche, Éric

(Cobham Microwave, France)

A

657

C

Reduced-Height Waveguide Y-Junction Circulator Based on Two Asymmetrical

Gyromagnetic Posts (WeIF1-55)

Lasser, Gregor

(University of Colorado Boulder, USA)

A

873

C

A S-C- / K-Band Reconfigurable GaAs MMIC Power Amplifier for 5G Applications

(Th3E-3)

Lee, Harrison P.

(Georgia Tech, USA)

A

573

C

Performance Improvements of Reverse-Saturated SiGe HBT Millimeter-Wave Switches

with Floating Emitter Configuration (WeIF1-29)

Lee, Hojun

(Tokyo Tech, Japan)

A

799

C

A Ka-Band 16-Element Deployable Active Phased Array Transmitter for Satellite

Communication (Th2D-2)

Lee, Jaehun

(KAIST, Korea)

A

846

C

Frequency Reconfigurable Dual-Band CMOS Power Amplifier for Millimeter-Wave 5G

Communications (Th3C-3)

Lee, Juseop

(Korea University, Korea)

A

665

C

Terahertz Input-Reflectionless Waveguide Filter (WeIF1-57)

Lee, Sanggu

(Korea University, Korea)

A

665

C

Terahertz Input-Reflectionless Waveguide Filter (WeIF1-57)

[Search]

A

B C

D E

F

G H

I J

K L

M

N O P Q R S T U V W X Y Z

IMS 2021 Detailed Author Index

[Page 70 / 148]

Lee, Sangyeop

(Hiroshima University, Japan)

A

705

C A 258-GHz CMOS Transmitter with Phase-Shifting Architecture for Phased-Array

Systems (Th1B-1)

(MWCL)

C A 32-Gb/s CMOS Receiver with Analog Carrier Recovery and Synchronous QPSK

Demodulation (Th1E-3)

Lee, Seokchul

(Georgia Tech, USA)

A

842

C A 2–24GHz SiGe HBT Cascode Non-Uniform Distributed Power Amplifier Using A

Compact, Wideband Two-Section Lumped Element Output Impedance Transformer

(Th3C-2)

Lee, Seungchan

(KAIST, Korea)

A

492

C A 24–30GHz Low-Loss Compact Di erential Four-Way Power Divider (WeIF1-7)

Lee, S.K.

(Broadcom, USA)

A

(MWCL)

C Novel Temperature-Compensated, Silicon SAW Design for Filter Integration (Tu4C-5)

Lee, Woosol (University of Florida, USA)

A

62

C High E ciency Metamaterial-Based Multi-Scale Wireless Power Transfer for Smart

Home Applications (Tu1D-3)

881

C Highly Compact Array MIMO Module for EMI Immune 5G Wireless Communications

(Th3E-6)

Lehtovuori, Anu

(Aalto University, Finland)

A

784

C Characterization of an Antenna Cluster and Transmitter IC with a Modulated Signal

(Th2A-5)

Lei, Lang

(CETC 54, China)

A

446

C A High-Accuracy Digital Predistorter Constructed by Reproducing Iterations of ILC

with Cascade Architecture (We3E-5)

614

C An Out-of-Band Digital Predistortion Scheme and its Verification for Power Amplifiers

with Strong Nonlinearity (WeIF1-40)

[Search]

A

B C D E

F

G

H I

J

K

L M N O P Q R S T U V W X Y Z