- •1 General description
- •2 Features
- •3 Ordering information
- •4 Marking
- •5 Functional diagram
- •6 Pinning information
- •6.1 Pinning
- •6.2 Pin description
- •7 Functional description
- •8 Limiting values
- •9 Recommended operating conditions
- •10 Static characteristics
- •11 Dynamic characteristics
- •11.1 Waveform and test circuit
- •12 Package outline
- •13 Abbreviations
- •14 Revision history
- •15 Legal information
- •Contents
Nexperia |
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74HC1G08; 74HCT1G08 |
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2-input AND gate |
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Symbol |
Parameter |
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Conditions |
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-40 °C to +85 °C |
-40 °C to +125 °C |
Unit |
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Min |
Typ |
Max |
Min |
Max |
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ICC |
supply current |
VI = VCC or GND; IO = 0 A; |
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- |
10 |
- |
20 |
μA |
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VCC = 6.0 V |
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CI |
input capacitance |
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1.5 |
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- |
- |
pF |
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74HCT1G08 |
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VIH |
HIGH-level input |
VCC = 4.5 V to 5.5 V |
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2.0 |
1.6 |
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2.0 |
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V |
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voltage |
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VIL |
LOW-level input |
VCC = 4.5 V to 5.5 V |
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1.2 |
0.8 |
- |
0.8 |
V |
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voltage |
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VOH |
HIGH-level output |
VI = VIH or VIL |
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voltage |
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IO = -20 μA; VCC = 4.5 V |
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4.4 |
4.5 |
- |
4.4 |
- |
V |
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IO = -2.0 mA; VCC = 4.5 V |
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4.13 |
4.32 |
- |
3.7 |
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V |
VOL |
LOW-level output |
VI = VIH or VIL |
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voltage |
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IO = 20 μA; VCC = 4.5 V |
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0 |
0.1 |
- |
0.1 |
V |
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IO = 2.0 mA; VCC = 4.5 V |
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0.15 |
0.33 |
- |
0.4 |
V |
II |
input leakage current |
VI = VCC or GND; VCC = 5.5 V |
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- |
1.0 |
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1.0 |
μA |
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ICC |
supply current |
VI = VCC or GND; IO = 0 A; |
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- |
- |
10 |
- |
20 |
μA |
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VCC = 5.5 V |
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ΔICC |
additional supply |
per input; VCC = 4.5 V to 5.5 V; |
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- |
500 |
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850 |
μA |
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current |
VI = VCC - 2.1 V; IO = 0 A |
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CI |
input capacitance |
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1.5 |
- |
- |
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pF |
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11 Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6
Symbol |
Parameter |
Conditions |
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-40 °C to +85 °C |
-40 °C to +125 °C |
Unit |
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Min |
Typ |
Max |
Min |
Max |
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74HC1G08 |
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tpd |
propagation delay |
A and B to Y; see Figure 5 |
[1] |
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VCC = 2.0 V; CL = 50 pF |
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25 |
115 |
- |
135 |
ns |
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VCC = 4.5 V; CL = 50 pF |
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9 |
23 |
- |
27 |
ns |
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VCC = 5.0 V; CL = 15 pF |
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7 |
- |
- |
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ns |
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VCC = 6.0 V; CL = 50 pF |
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8 |
20 |
- |
23 |
ns |
CPD |
power dissipation |
VI = GND to VCC |
[2] |
- |
19 |
- |
- |
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pF |
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capacitance |
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74HC_HCT1G08 |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2018. All rights reserved. |
Product data sheet |
Rev. 5 — 14 March 2018 |
5 / 12 |
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Nexperia |
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74HC1G08; 74HCT1G08 |
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2-input AND gate |
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Symbol |
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Parameter |
Conditions |
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-40 °C to +85 °C |
-40 °C to +125 °C |
Unit |
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Min |
Typ |
Max |
Min |
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Max |
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74HCT1G08 |
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tpd |
propagation delay |
A and B to Y; see Figure 5 |
[1] |
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VCC = 4.5 V; CL = 50 pF |
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- |
11 |
23 |
- |
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27 |
ns |
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VCC = 5.0 V; CL = 15 pF |
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11 |
- |
- |
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ns |
CPD |
power dissipation |
VI = GND to VCC - 1.5 V |
[2] |
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21 |
- |
- |
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pF |
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capacitance |
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[1]tpd is the same as tPLH and tPHL.
[2]CPD is used to determine the dynamic power dissipation PD (μW). PD = CPD x VCC2 x fi + ∑(CL x VCC2 x fo) where:
fi = input frequency in MHz fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts ∑(CL x VCC2 x fo) = sum of outputs
11.1Waveform and test circuit
A, B input |
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VM |
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tPHL |
tPLH |
Y output |
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VM |
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mna116
For 74HC1G08: VM = 0.5 x VCC; VI = GND to VCC For 74HCT1G08: VM = 1.3 V; VI = GND to 3.0 V
Figure 5. The input (A and B) to output (Y) propagation delays
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VCC |
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VI |
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VO |
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PULSE |
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DUT |
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GENERATOR |
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CL |
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RT |
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mna101
Test data is given in Table 8. Definitions for test circuit:
CL = Load capacitance including jig and probe capacitance
RT = Termination resistance should be equal to the output impedance Zo of the pulse generator
Figure 6. Test circuit for measuring switching times
74HC_HCT1G08 |
All information provided in this document is subject to legal disclaimers. |
© Nexperia B.V. 2018. All rights reserved. |
Product data sheet |
Rev. 5 — 14 March 2018 |
6 / 12 |
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