5.3.7Internal clock source characteristics

The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9.

High-speed internal (HSI) RC oscillator

Table 24. HSI oscillator characteristics (1)

1.VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

2.Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the ST website www.st.com.

3.Guaranteed by design, not tested in production.

4.Based on characterization, not tested in production.

Low-speed internal (LSI) RC oscillator

Table 25. LSI oscillator characteristics (1)

1.VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

2.Based on characterization, not tested in production.

3.Guaranteed by design, not tested in production.

Wakeup time from low-power mode

The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC oscillator. The clock source used to wake up the device depends from the current operating mode:

•Stop or Standby mode: the clock source is the RC oscillator

•Sleep mode: the clock source is the clock that was set before entering Sleep mode.

1.The wakeup times are measured from the wakeup event to the point in which the user application code reads the first instruction.

5.3.8PLL, PLL2 and PLL3 characteristics

The parameters given in Table 27 and Table 28 are derived from tests performed under temperature and VDD supply voltage conditions summarized in Table 9.

Table 27. PLL characteristics

1.Based on characterization, not tested in production.

2.Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT.

Table 28. PLL2 and PLL3 characteristics

1.Based on characterization, not tested in production.

2.Take care of using the appropriate multiplier factors so as to have PLL input clock values compatible with the range defined by fPLL_OUT.

5.3.9Memory characteristics

Flash memory

The characteristics are given at TA = –40 to 105 °C unless otherwise specified.

Table 29. Flash memory characteristics

1. Guaranteed by design, not tested in production.

Table 30. Flash memory endurance and data retention

1.Based on characterization, not tested in production.

2.Cycling performed over the whole temperature range.

5.3.10EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports). the device is stressed by two electromagnetic events until a failure occurs. The failure is indicated by the LEDs:

•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•FTB: A burst of fast transient voltage (positive and negative) is applied to VDD and VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 31. They are based on the EMS levels and classes defined in application note AN1709.

Table 31. EMS characteristics

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical application environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•Corrupted program counter

•Unexpected reset

•Critical Data corruption (control registers...)

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second.

To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015).