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AT42070

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AT-42070

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Data Sheet

Description

Avago’s AT-42070 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT 42070 is housed in a hermetic, high reliability goldceramic 70 mil microstrip package. The 4 micron emitter- to-emitter pitch enables this transistor to be used in many different functions. The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50Ω up to 1 GHz, makes this device easy to use as a low noise amplifier.

The AT-42070 bipolar transistor is fabricated using Avago’s 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of this device.

Features

•High Output Power:

21.0dBm Typical P1 dB at 2.0 GHz

20.5dBm Typical P1 dB at 4.0 GHz

•High Gain at 1 dB Compression:

15.0dB Typical G1 dB at 2.0 GHz

10.0dB Typical G1 dB at 4.0 GHz

•Low Noise Figure: 1.9 dB Typical NFO at 2.0 GHz

•High Gain-Bandwidth Product: 8.0 GHz Typical fT

•Hermetic Gold-ceramic Microstrip Package

70 mil Package

AT-42070 Absolute Maximum Ratings

			Absolute
Symbol	Parameter	Units	Maximum[1]
VEBO	Emitter-Base Voltage	V	1.5
VCBO	Collector-Base Voltage	V	0
VCEO	Collector-Emitter Voltage	V	12
IC	Collector Current	mA	80
PT	Power Dissipation [2,3]	mW	600
Tj	Junction Temperature	°C	00
TSTG	Storage Temperature	°C	-65 to 200

Thermal Resistance[2,4]:

θjc = 150°C/W

Notes:

1.Permanent damage may occur if any of these limits are exceeded.

2.Tcase = 25°C.

3.Derate at 6.7 mW/°C for Tc > 110°C.

4.The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance”for more information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.

21E

Insertion Power Gain; V = 8 V, I

= 35 mA

f = 2.0 GHz

10.5

11.5

f = 4.0 GHz

5.5

P1 dB

Power Output @ 1 dB Gain Compression

f = 2.0 GHz

dBm

21.0

VCE = 8 V, IC = 35 mA

f= 4.0 GHz

0.5

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

15.0

f = 4.0 GHz

10.0

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 2.0 GHz

1.9

f = 4.0 GHz

3.0

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

14.0

f = 4.0 GHz

10.5

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

—

150

270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA

2.0

Collector Base Capacitance[1]: V

= 8 V, f = 1 MHz

0.28

Note:

1. For this test, the emitter is grounded.

AT-42070 Typical Performance, TA = 25°C

	20													(dBm)	24
	20														24

											1.0 GHz										2.0 GHz
	16													dB	20
(dB)														dB							4.0 GHz
(dB)	12										2.0 GHz			P	16		P1dB
														1
GAIN


																					2.0 GHz
2	8														12
\|	8														12
21E														(dB)		G1dB
\|S														(dB)		G1dB
											4.0 GHz

	4													1 dB	8						4.0 GHz
	4														8						4.0 GHz


														G
	0														4 0
	0	0	10	20		30			40		50				4 0		10	20	30	40	50
					IC (mA)														IC (mA)
Figure 1. Insertion Power Gain vs. Collector Current														Figure 2. Output Power and 1 dB Compressed Gain vs.
and Frequency. VCE = 8 V.														Collector Current and Frequency. VCE = 8 V.
	40														24
	35														21
	35														21		GA
																	GA
	30														18
	30									MSG					18
	25									MSG					15
(dB)														(dB)

	20														12								4
GAIN	20													GAIN	12								4
GAIN	15													GAIN	9								3
												MAG
	10						\|S	21E		\|2														(dB)
															6								2
															6					NFO

																								O
	5														3								1	NF
	5														3								1	NF
	0														0								0
	0		0.1	0.3		0.5			1.0		3.0		6.0		0								0
			0.1	0.3		0.5			1.0		3.0		6.0		0.5			1.0	2.0	3.0	4.0	5.0
				FREQUENCY (GHz)														FREQUENCY (GHz)
Figure 4. Insertion Power Gain, Maximum Available														Figure 5. Noise Figure and Associated Gain vs.
Gain and Maximum Stable Gain vs. Frequency.														Frequency. VCE = 8 V, IC = 10 mA.
VCE = 8 V, IC = 35 mA.

	24
(dBm)	24						10 V
							10 V
	20
	20							6 V
								6 V
dB	16
dB	16							4 V
1		P1dB						4 V
P	12	P1dB


	16
(dB)								10 V



	14							6 V
								6 V
dB	12	G1dB						4 V
dB		G1dB
1
1
G
	10 0
	10 0	10	20	30	40	50

IC (mA)

Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz.

AT-42070 Typical Scattering Parameters,

Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 10 mA

Freq.		S11		S21			S12			S22
GHz	Mag.	Ang.	dB	Mag.	Ang.	dB	Mag.	Ang.	Mag.	Ang.
0.1	.70	-49	28.5	26.56	154	-36.0	.016	77	.91	-18
0.5	.69	-137	21.5	11.85	105	-29.6	.033	34	.50	-41
1.0	.69	-165	16.0	6.34	85	-27.2	.044	29	.40	-44
1.5	.68	-179	12.7	4.33	72	-27.4	.043	37	.38	-48
2.0	.69	169	10.3	3.26	62	-25.6	.052	42	.37	-54
2.5	.69	164	8.5	2.64	56	-25.4	.054	46	.37	-55
3.0	.70	157	6.9	2.22	48	-23.8	.065	52	.39	-63
3.5	.70	151	5.6	1.91	39	-22.4	.076	51	.41	-71
4.0	.69	144	4.5	1.68	30	-21.4	.085	55	.43	-77
4.5	.68	137	3.5	1.50	22	-20.4	.096	49	.46	-83
5.0	.68	128	2.7	1.37	14	-19.4	.107	50	.48	-87
5.5	.68	117	2.0	1.26	5	-18.3	.121	45	.48	-91
6.0	.70	107	1.2	1.15	-3	-17.6	.132	44	.48	-98

AT-42070 Typical Scattering Parameters,

Common Emitter, ZO = 50 Ω, TA = 25°C, VCE = 8 V, IC = 35 mA

Freq.		S11		S21			S12			S22
GHz	Mag.	Ang.	dB	Mag.	Ang.	dB	Mag.	Ang.	Mag.	Ang.
0.1	.52	-95	33.4	46.52	139	-40.0	.010	50	.77	-29
0.5	.66	-163	23.1	14.33	95	-34.4	.019	46	.34	-42
1.0	.67	179	17.3	7.36	80	-29.6	.033	51	.28	-41
1.5	.67	169	13.9	4.97	69	-28.0	.040	59	.27	-44
2.0	.68	160	11.4	3.74	60	-27.3	.053	59	.27	-51
2.5	.69	157	9.6	3.04	55	-23.8	.065	65	.28	-53
3.0	.69	151	8.1	2.55	47	-22.8	.072	65	.28	-62
3.5	.69	145	6.8	2.20	39	-21.4	.086	59	.30	-72
4.0	.68	139	5.7	1.93	20	-20.2	.097	60	.33	-80
4.5	.67	132	4.7	1.74	22	-19.3	.109	54	.36	-85
5.0	.67	123	4.0	1.59	13	-18.0	.126	50	.38	-90
5.5	.67	113	3.2	1.46	5	-17.2	.138	46	.39	-94
6.0	.69	103	2.5	1.34	-4	-16.4	.152	40	.38	-102

A model for this device is available in the DEVICE MODELS section.

AT-42070 Noise Parameters: VCE = 8 V, IC = 10 mA

Freq.	NFO		Γopt		RN/50
GHz	dB	Mag		Ang	RN/50
0.1	1.0	.05		15	0.13
0.5	1.1	.06		75	0.13
1.0	1.5	.10		126	0.12
2.0	1.9	.23		172	0.11
4.0	3.0	.45		-145	0.17

Ordering Information

Part Number	No. of Devices
AT-42070	100

70 mil Package Dimensions

.040 1.02

EMITTER

.020

.508

BASE

COLLECTOR

Notes:

(unless otherwise specified)

EMITTER

1. Dimensions are

2. Tolerances

in .xxx = ± 0.005

.070

mm .xx = ± 0.13

.004 ± .002

1.78

.10 ± .05

.495 ± .030

.035

12.57 ± .76

.89

For product information and a complete list of distributors, please go to our web site: www.avagotech.com

Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2008 Avago Technologies Limited. All rights reserved. Obsoletes 5989-2654EN AV02-1218EN May 5, 2008

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