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31.8ADC Characteristics – Preliminary Data

Table 31-9.

ADC Characteristics, Singel Ended Channels

 

 

 

 

Symbol

Parameter

Condition

Min. (1)

Typ. (1)

Max. (1)

Units

 

Resolution

Single Ended Conversion

 

10

 

Bits

 

 

 

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

 

VREF = 4V, VCC = 4V,

 

2.25

2.5

 

 

 

CLKADC= 200kHz

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

 

VREF = 4V, VCC = 4V,

 

3

 

 

 

Absolute accuracy (Including

CLKADC = 1MHz

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

INL, DNL, quantization error,

 

 

 

 

 

gain and offset error)

VREF = 4V, VCC = 4V,

 

2

 

 

 

 

CLKADC = 200kHz

 

 

 

 

 

 

 

 

 

 

 

Noise Reduction Mode

 

 

 

 

 

 

 

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

 

VREF = 4V, VCC = 4V,

 

3

 

 

 

 

CLKADC = 1MHz

 

 

 

 

 

 

 

 

LSB

 

 

Noise Reduction Mode

 

 

 

 

 

 

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

Integral Non-Linearity (INL)

VREF = 4V, VCC = 4V,

 

1.25

 

 

 

 

CLKADC = 200kHz

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

Differential Non-Linearity (DNL)

VREF = 4V, VCC = 4V,

 

0.5

 

 

 

 

CLKADC = 200kHz

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

Gain Error

VREF = 4V, VCC = 4V,

 

2

 

 

 

 

CLKADC= 200kHz

 

 

 

 

 

 

Single Ended Conversion

 

 

 

 

 

Offset Error

VREF = 4V, VCC = 4V,

 

-2

 

 

 

 

CLKADC = 200kHz

 

 

 

 

 

Conversion Time

Free Running Conversion

13

 

260

µs

 

 

 

 

 

 

 

 

Clock Frequency

Single Ended Conversion

50

 

1000

kHz

 

 

 

 

 

 

 

AVCC

Analog Supply Voltage

 

VCC - 0.3

 

VCC + 0.3

 

VREF

Reference Voltage

 

1.0

 

AVCC

V

VIN

Input Voltage

 

GND

 

VREF

 

 

Input Bandwidth

 

 

38,5

 

kHz

 

 

 

 

 

 

 

VINT1

Internal Voltage Reference

1.1V

1.0

1.1

1.2

V

VINT2

Internal Voltage Reference

2.56V

2.4

2.56

2.8

 

RREF

Reference Input Resistance

 

 

32

 

k

RAIN

Analog Input Resistance

 

 

100

 

M

Note: 1. Values are guidelines only.

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

365

2549Q–AVR–02/2014

Table 31-10. ADC Characteristics, Differential Channels

 

 

 

 

 

Min. (1)

Typ. (1)

Max. (1)

Unit

Symbol

Parameter

 

Condition

s

 

 

Gain =

 

8

 

 

 

 

 

 

 

 

 

 

 

Resolution

Gain =

10×

 

8

 

Bits

 

 

 

 

 

 

 

 

 

Gain = 200×

 

7

 

 

 

 

 

 

 

 

 

 

 

 

Gain = 1×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

18

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

Absolute Accuracy(Including INL, DNL,

Gain = 10×

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

17

 

 

 

Quantization Error, Gain and Offset Error)

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

 

 

 

 

 

 

Gain = 200×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

9

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 1×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

2.5

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 10×

 

 

 

 

 

 

Integral Non-Linearity (INL)

VREF = 4V, VCC = 5V

 

5

 

LSB

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 200×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

9

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 1×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

0.75

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 10×

 

 

1.5

 

 

 

Differential Non-Linearity (DNL)

VREF = 4V, VCC = 5V

 

 

 

 

 

 

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 200×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

10

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain =

 

 

1.7

 

 

 

 

 

 

 

 

 

 

 

 

Gain Error

Gain =

10×

 

 

1.7

 

%

 

 

 

 

 

 

 

 

 

 

Gain = 200×

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

Gain = 1×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

2

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 10×

 

 

 

 

 

 

Offset Error

VREF = 4V, VCC = 5V

 

2

 

LSB

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

 

Gain = 200×

 

 

 

 

 

 

 

VREF = 4V, VCC = 5V

 

3

 

 

 

 

CLKADC = 50 - 200kHz

 

 

 

 

 

Clock Frequency

 

 

 

50

 

200

kHz

 

 

 

 

 

 

 

 

 

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

366

2549Q–AVR–02/2014

Table 31-10. ADC Characteristics, Differential Channels (Continued)

 

 

 

Min. (1)

Typ. (1)

Max. (1)

Unit

Symbol

Parameter

Condition

s

 

Conversion Time

 

65

 

260

µs

 

 

 

 

 

 

 

AVCC

Analog Supply Voltage

 

VCC - 0.3

 

VCC + 0.3

 

VREF

Reference Voltage

 

2.7

 

AVCC - 0.5

V

VIN

Input Voltage

 

GND

 

VCC

 

 

 

VDIFF

Input Differential Voltage

 

-VREF/Gain

 

VREF/Gain

 

 

ADC Conversion Output

 

-511

 

511

LSB

 

 

 

 

 

 

 

 

Input Bandwidth

 

 

4

 

kHz

 

 

 

 

 

 

 

VINT

Internal Voltage Reference

 

2.3

2.56

2.8

V

RREF

Reference Input Resistance

 

 

32

 

k

RAIN

Analog Input Resistance

 

 

100

 

M

Note: Values are guidelines only.

31.9External Data Memory Timing

Table 31-11. External Data Memory Characteristics, 4.5 to 5.5 Volts, No Wait-state

 

 

 

 

8MHz Oscillator

 

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

 

0.0

16

 

MHz

1

tLHLL

ALE Pulse Width

115

 

1.0tCLCL-10

 

 

 

2

t

AVLL

Address Valid A to ALE Low

57.5

 

0.5t

 

-5(1)

 

 

 

 

 

 

 

 

 

CLCL

 

 

 

3a

tLLAX_ST

Address Hold After ALE Low,

5

 

 

5

 

 

 

 

write access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3b

tLLAX_LD

Address Hold after ALE Low,

5

 

 

5

 

 

 

 

read access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

t

AVLLC

Address Valid C to ALE Low

57.5

 

0.5t

 

-5(1)

 

 

 

 

 

 

 

 

 

CLCL

 

 

 

5

tAVRL

Address Valid to RD Low

115

 

1.0tCLCL-10

 

 

 

6

tAVWL

Address Valid to WR Low

115

 

1.0tCLCL-10

 

 

 

7

t

LLWL

ALE Low to WR Low

47.5

67.5

0.5t

 

-15(2)

0.5t

+5(2)

 

 

 

 

 

 

CLCL

 

CLCL

 

ns

8

t

LLRL

ALE Low to RD Low

47.5

67.5

0.5t

 

-15(2)

0.5t

+5(2)

 

 

 

 

 

 

 

CLCL

 

CLCL

 

 

9

tDVRH

Data Setup to RD High

40

 

 

40

 

 

 

 

10

tRLDV

Read Low to Data Valid

 

75

 

 

 

1.0tCLCL-50

 

11

tRHDX

Data Hold After RD High

0

 

 

0

 

 

 

 

12

tRLRH

RD Pulse Width

115

 

1.0tCLCL-10

 

 

 

13

t

DVWL

Data Setup to WR Low

42.5

 

0.5t

 

-20(1)

 

 

 

 

 

 

 

 

CLCL

 

 

 

 

14

tWHDX

Data Hold After WR High

115

 

1.0tCLCL-10

 

 

 

15

tDVWH

Data Valid to WR High

125

 

1.0tCLCL

 

 

 

16

tWLWH

WR Pulse Width

115

 

1.0tCLCL-10

 

 

 

Notes:

 

1. This assumes 50% clock duty cycle. The half period is actually the high time of the external clock, XTAL1.

 

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

367

2549Q–AVR–02/2014

2. This assumes 50% clock duty cycle. The half period is actually the low time of the external clock, XTAL1.

Table 31-12. External Data Memory Characteristics, 4.5 to 5.5 Volts, 1 Cycle Wait-state

 

 

 

8MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

200

 

2.0tCLCL-50

 

12

tRLRH

RD Pulse Width

240

 

2.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

240

 

2.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

240

 

2.0tCLCL-10

 

 

Table 31-13. External Data Memory Characteristics, 4.5 to 5.5 Volts, SRWn1 = 1, SRWn0 = 0

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

325

 

3.0tCLCL-50

 

12

tRLRH

RD Pulse Width

365

 

3.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

375

 

3.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

365

 

3.0tCLCL-10

 

 

Table 31-14. External Data Memory Characteristics, 4.5 to 5.5 Volts, SRWn1 = 1, SRWn0 = 1

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

16

MHz

10

tRLDV

Read Low to Data Valid

 

325

 

3.0tCLCL-50

 

12

tRLRH

RD Pulse Width

365

 

3.0tCLCL-10

 

 

14

tWHDX

Data Hold After WR High

240

 

2.0tCLCL-10

 

ns

15

tDVWH

Data Valid to WR High

375

 

3.0tCLCL

 

 

16

tWLWH

WR Pulse Width

365

 

3.0tCLCL-10

 

 

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

368

2549Q–AVR–02/2014

Table 31-15. External Data Memory Characteristics, 2.7 to 5.5 Volts, No Wait-state

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

 

MHz

1

tLHLL

ALE Pulse Width

235

 

tCLCL-15

 

 

 

2

t

Address Valid A to ALE Low

115

 

0.5t

-10(1)

 

 

 

 

AVLL

 

 

 

CLCL

 

 

 

 

3a

tLLAX_ST

Address Hold After ALE Low,

5

 

5

 

 

 

 

write access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3b

tLLAX_LD

Address Hold after ALE Low,

5

 

5

 

 

 

 

read access

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

t

Address Valid C to ALE Low

115

 

0.5t

-10(1)

 

 

 

 

AVLLC

 

 

 

CLCL

 

 

 

 

5

tAVRL

Address Valid to RD Low

235

 

1.0tCLCL-15

 

 

 

6

tAVWL

Address Valid to WR Low

235

 

1.0tCLCL-15

 

 

 

7

t

ALE Low to WR Low

115

130

0.5t

-10(2)

0.5t

+5(2)

 

 

LLWL

 

 

 

CLCL

 

CLCL

 

ns

8

t

ALE Low to RD Low

115

130

0.5t

-10(2)

0.5t

+5(2)

 

 

LLRL

 

 

 

CLCL

 

CLCL

 

 

9

tDVRH

Data Setup to RD High

45

 

45

 

 

 

 

10

tRLDV

Read Low to Data Valid

 

190

 

 

1.0tCLCL-60

 

11

tRHDX

Data Hold After RD High

0

 

0

 

 

 

 

12

tRLRH

RD Pulse Width

235

 

1.0tCLCL-15

 

 

 

13

t

Data Setup to WR Low

105

 

0.5t

-20(1)

 

 

 

 

DVWL

 

 

 

CLCL

 

 

 

 

14

tWHDX

Data Hold After WR High

235

 

1.0tCLCL-15

 

 

 

15

tDVWH

Data Valid to WR High

250

 

1.0tCLCL

 

 

 

16

tWLWH

WR Pulse Width

235

 

1.0tCLCL-15

 

 

 

Notes: 1. This assumes 50% clock duty cycle. The half period is actually the high time of the external clock, XTAL1. 2. This assumes 50% clock duty cycle. The half period is actually the low time of the external clock, XTAL1.

Table 31-16. External Data Memory Characteristics, 2.7 to 5.5 Volts, SRWn1 = 0, SRWn0 = 1

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

440

 

2.0tCLCL-60

 

12

tRLRH

RD Pulse Width

485

 

2.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

500

 

2.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

485

 

2.0tCLCL-15

 

 

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

369

2549Q–AVR–02/2014

Table 31-17. External Data Memory Characteristics, 2.7 to 5.5 Volts, SRWn1 = 1, SRWn0 = 0

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

690

 

3.0tCLCL-60

 

12

tRLRH

RD Pulse Width

735

 

3.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

750

 

3.0tCLCL

 

 

 

 

16

tWLWH

WR Pulse Width

735

 

3.0tCLCL-15

 

 

Table 31-18. External Data Memory Characteristics, 2.7 to 5.5 Volts, SRWn1 = 1, SRWn0 = 1

 

 

 

4MHz Oscillator

Variable Oscillator

 

 

 

 

 

 

 

 

 

 

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

 

 

 

 

 

 

 

 

0

1/tCLCL

Oscillator Frequency

 

 

0.0

8

MHz

10

tRLDV

Read Low to Data Valid

 

690

 

3.0tCLCL-60

 

12

tRLRH

RD Pulse Width

735

 

3.0tCLCL-15

 

 

14

tWHDX

Data Hold After WR High

485

 

2.0tCLCL-15

 

ns

15

tDVWH

Data Valid to WR High

750

 

3.0tCLCL

 

 

16

tWLWH

WR Pulse Width

735

 

3.0tCLCL-15

 

 

Figure 31-9. External Memory Timing (SRWn1 = 0, SRWn0 = 0

 

T1

T2

 

T3

T4

System Clock (CLKCPU)

 

 

 

 

 

 

 

1

 

 

 

ALE

 

 

 

 

 

 

 

4

7

 

 

A15:8

Prev. addr.

 

 

Address

 

 

 

 

 

15

 

 

 

2

3a

13

 

DA7:0

Prev. data

Address

XX

Data

 

 

 

6

 

16

14

 

 

 

 

WR

 

 

 

 

 

 

 

 

3b

9

11

DA7:0 (XMBK = 0)

 

Address

Data

 

 

 

5

 

10

 

 

 

 

8

12

 

RD

Write

Read

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

370

2549Q–AVR–02/2014

Figure 31-10. External Memory Timing (SRWn1 = 0, SRWn0 = 1)

 

T1

T2

 

T3

T4

T5

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

1

 

 

 

 

ALE

 

 

 

 

 

 

 

 

4

7

 

 

 

A15:8

Prev. addr.

 

 

Address

 

 

 

 

 

 

 

15

 

 

 

2

3a

13

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

6

 

 

16

14

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

3b

 

9

11

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

5

 

10

 

 

 

 

 

8

 

12

 

RD

Write

Read

Figure 31-11. External Memory Timing (SRWn1 = 1, SRWn0 = 0)

 

T1

T2

 

T3

T4

T5

T6

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

ALE

 

 

 

 

 

 

 

 

 

4

7

 

 

 

 

A15:8

Prev. addr.

 

 

 

Address

 

 

 

 

 

 

 

15

 

 

 

 

2

3a

13

 

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

 

6

 

 

16

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

 

3b

 

9

 

11

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

 

5

 

10

 

 

 

 

 

 

8

 

12

 

 

RD

Write

Read

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

371

2549Q–AVR–02/2014

Figure 31-12. External Memory Timing (SRWn1 = 1, SRWn0 = 1)()

 

T1

T2

 

T3

T4

T5

T6

T7

System Clock (CLKCPU)

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

ALE

 

 

 

 

 

 

 

 

 

 

4

7

 

 

 

 

 

A15:8

Prev. addr.

 

 

 

Address

 

 

 

 

 

 

 

 

15

 

 

 

 

 

2

3a

13

 

 

 

 

DA7:0

Prev. data

Address

XX

 

Data

 

 

 

 

 

6

 

 

16

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

WR

 

 

 

 

 

 

 

 

 

 

 

3b

 

9

 

11

 

DA7:0 (XMBK = 0)

 

Address

 

Data

 

 

 

 

 

5

 

10

 

 

 

 

 

 

 

8

 

12

 

 

 

RD

Write

Read

The ALE pulse in the last period (T4-T7) is only present if the next instruction accesses the RAM (internal or external).

ATmega640/V-1280/V-1281/V-2560/V-2561/V [DATASHEET]

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