Методическое пособие 565
.pdfdeposit material="aluminum" thick=0.04 between="3.32,3.37" deposit material="aluminum" thick=0.04 between="4.83,4.88" deposit material="aluminum" thick=0.04 between="5.02,5.07" deposit material="aluminum" thick=0.04 between="5.25,5.3" deposit material="aluminum" thick=0.04 between="6.63,6.68" deposit material="aluminum" thick=0.04 between="6.82,6.87" deposit material="aluminum" thick=0.04 between="7.05,7.1"
#Присваиваем имена электродам electrodes name="vss" X=0.26 Z=-0.01 electrodes name="vss" X=4.84 Z=-0.01 electrodes name="vee" X=1.16 Z=-0.01 electrodes name="vee" X=5.26 Z=-0.01 electrodes name="vee" X=6.64 Z=-0.01 electrodes name="vgg" X=0.9 Z=-0.02 electrodes name="vgg" X=2.7 Z=-0.02 electrodes name="vdd" X=2.96 Z=-0.01 electrodes name="vdd" X=3.35 Z=-0.01 electrodes name="vdd" X=7.06 Z=-0.01
electrodes name="node1" X=0.61 Z=-0.01 electrodes name="node1" X=5.06 Z=-0.01 electrodes name="node2" X=2.41 Z=-0.01 electrodes name="node2" X=6.86 Z=-0.01
#Сохраняем структуру и выводим ее на экран export structure=6bikmop.str
tonyplot 6bikmop.str quit
Готовый инвертор на БиКМОП показан на рис. 36.
80
Рис. 36. Структура инвертора на БиКМОП
6.1. Переходная характеристика
Листинг программы для расчета переходной характеристики инвертора на БиКМОП:
#Переходим в victorydevice и задействуем все ядра go victorydevice simflags="-P all"
#Загружаем структуру
mesh infile="6bikmop.str" width=0.1
#Указываем затвор – поликремний n-типа contact name=gate n.poly
contact name=vee current
#Задаем емкость на стоке (pF/um)
contact name=vee cap=3.4515e-17 resis=1e15
# Для расчета используем метод Ньютона method newton autonr trap
81
#Задаем питание схемы solve init
solve previous solve vvdd=0.01
solve vstep=0.1 vfinal=5 name=vdd
#Сохраняем log-файл и начинаем расчет log outf=6bikmop_1log.log master
solve vvgg=0 ramptime=1e-20 dt=1e-20 tstop=1e-20
#Залаем переходный режим
solve vvgg=1.3 ramptime=2e-11 dt=8e-13 tstop=2e-11 solve vvgg=1.3 ramptime=8e-11 dt=1e-11 tstop=1e-10
# Выводим log-файл на экран
tonyplot 6bikmop_1log.log -set tran_v.set quit
Готовая переходная характеристика инвертора на БиКМОП показана на рис. 37.
Рис. 37. Переходная характеристика инвертора на БиКМОП
82
6.2. Временной анализ
Листинг программы для расчета временного анализа инвертора на БиКМОП:
#Переходим в victorydevice и задействуем все ядра процессора go victorydevice simflags="-P all"
#Загружаем структуру
mesh infile="6bikmop.str" width=0.1
#Указываем затвор из поликремния n-типа contact name=gate n.poly
contact name=vee current
#Задаем емкость на сток (pF/um)
contact name=vee cap=3.4515e-17 resis=1e15
#Используем метод Ньютона method newton autonr trap
#Задаем питание схемы
solve init solve previous
solve vvdd=0.01
solve vstep=0.1 vfinal=5 name=vdd
#Сохраняем log-файл и начинаем расчет log outf=6bikmop_2log.log master
solve vvgg=0 ramptime=1e-20 dt=1e-20 tstop=1e-20
#Переходный режим
solve vvgg=2 ramptime=2e-11 dt=8e-13 tstop=2e-11 solve vvgg=2 ramptime=8e-11 dt=1e-11 tstop=1e-10 solve vvgg=0 ramptime=2e-11 dt=8e-13 tstop=1.2e-10 solve vvgg=0 ramptime=8e-11 dt=1e-11 tstop=2e-10
# Выводим log-файл на экран
tonyplot 6bikmop_2log.log -set tran_v.set quit
Готовый временной анализ инвертора на БиКМОП показан на рис. 38.
83
Рис. 38. Временной анализ инвертора на БиКМОП
6.3.Схема инвертора на БиКМОП с нагрузочными сопротивлениями
Вкачестве нагрузочного сопротивления у инвертора на БиКМОП используют n-канальные МОП-транзисторы. Их будем брать с предыдущих работ.
Листинг программы для расчета инвертора на БиКМОП с нагрузочными сопротивлениями и его временной анализ:
#Переходим в victoryprocess и задействуем все ядра go victoryprocess simflags="-P all"
#1 строка: физические характеристики подложки: материал – кремний, легированный фосфором;
#2 строка: задание структуры (2D режим) с начальной толщиной подложки
11,2 мкм
#3 строка: численные параметры расчета технологического процесса – разрешение при моделировании
init material="silicon" rot.sub=45 c.phos=1e14 \ from=0 to=11.2 depth=0.5 gasheight=1 \ resolution="0.01,0.01"
84
#Задаем настройки сетки моделирования
#по оси Х:
line X loc=0.0 |
spac=0.02 |
line X loc=0.02 |
spac=0.02 |
line X loc=0.04 |
spac=0.01 |
line X loc=0.08 |
spac=0.01 |
line X loc=0.11 |
spac=0.03 |
line X loc=0.14 |
spac=0.01 |
line X loc=0.18 |
spac=0.01 |
line X loc=0.2 |
spac=0.03 |
line X loc=0.32 |
spac=0.03 |
line X loc=0.35 |
spac=0.01 |
line X loc=0.39 |
spac=0.01 |
line X loc=0.42 |
spac=0.03 |
line X loc=0.47 |
spac=0.03 |
line X loc=0.48 |
spac=0.01 |
line X loc=0.52 |
spac=0.01 |
line X loc=0.55 |
spac=0.03 |
line X loc=0.77 |
spac=0.03 |
line X loc=0.8 |
spac=0.01 |
line X loc=0.82 |
spac=0.01 |
line X loc=0.85 |
spac=0.03 |
line X loc=0.95 |
spac=0.03 |
line X loc=0.98 |
spac=0.01 |
line X loc=1.02 |
spac=0.01 |
line X loc=1.05 |
spac=0.03 |
line X loc=1.25 |
spac=0.03 |
line X loc=1.28 |
spac=0.01 |
line X loc=1.32 |
spac=0.01 |
line X loc=1.35 |
spac=0.03 |
line X loc=1.41 |
spac=0.03 |
line X loc=1.44 |
spac=0.01 |
line X loc=1.48 |
spac=0.01 |
line X loc=1.58 |
spac=0.1 |
line X loc=2.04 |
spac=0.1 |
line X loc=2.14 |
spac=0.01 |
line X loc=2.18 |
spac=0.01 |
line X loc=2.2 |
spac=0.03 |
line X loc=2.32 |
spac=0.03 |
line X loc=2.35 |
spac=0.01 |
line X loc=2.39 |
spac=0.01 |
line X loc=2.42 |
spac=0.03 |
line X loc=2.47 |
spac=0.03 |
85
line X loc=2.48 |
spac=0.01 |
line X loc=2.52 |
spac=0.01 |
line X loc=2.55 |
spac=0.03 |
line X loc=2.77 |
spac=0.03 |
line X loc=2.8 |
spac=0.01 |
line X loc=2.81 |
spac=0.005 |
line X loc=2.82 |
spac=0.01 |
line X loc=2.85 |
spac=0.03 |
line X loc=2.95 |
spac=0.03 |
line X loc=2.98 |
spac=0.01 |
line X loc=3.00 |
spac=0.005 |
line X loc=3.02 |
spac=0.01 |
line X loc=3.05 |
spac=0.03 |
line X loc=3.25 |
spac=0.03 |
line X loc=3.28 |
spac=0.01 |
line X loc=3.32 |
spac=0.01 |
line X loc=3.42 |
spac=0.1 |
line X loc=4.04 |
spac=0.1 |
line X loc=4.14 |
spac=0.01 |
line X loc=4.16 |
spac=0.005 |
line X loc=4.18 |
spac=0.01 |
line X loc=4.2 |
spac=0.03 |
line X loc=4.32 |
spac=0.03 |
line X loc=4.35 |
spac=0.01 |
line X loc=4.37 |
spac=0.005 |
line X loc=4.39 |
spac=0.01 |
line X loc=4.42 |
spac=0.03 |
line X loc=4.47 |
spac=0.03 |
line X loc=4.48 |
spac=0.01 |
line X loc=4.52 |
spac=0.01 |
line X loc=4.55 |
spac=0.03 |
line X loc=4.77 |
spac=0.03 |
line X loc=4.8 |
spac=0.01 |
line X loc=4.82 |
spac=0.01 |
line X loc=4.85 |
spac=0.03 |
line X loc=4.95 |
spac=0.03 |
line X loc=4.98 |
spac=0.01 |
line X loc=5.02 |
spac=0.01 |
line X loc=5.05 |
spac=0.03 |
line X loc=5.25 |
spac=0.03 |
line X loc=5.28 |
spac=0.01 |
line X loc=5.32 |
spac=0.01 |
line X loc=5.35 |
spac=0.03 |
86
line X loc=5.41 |
spac=0.03 |
line X loc=5.44 |
spac=0.01 |
line X loc=5.48 |
spac=0.01 |
line X loc=5.58 |
spac=0.1 |
line X loc=6.16 |
spac=0.1 |
line X loc=6.26 |
spac=0.01 |
line X loc=6.3 |
spac=0.01 |
line X loc=6.33 |
spac=0.03 |
line X loc=6.57 |
spac=0.03 |
line X loc=6.6 |
spac=0.01 |
line X loc=6.62 |
spac=0.01 |
line X loc=6.65 |
spac=0.03 |
line X loc=6.75 |
spac=0.03 |
line X loc=6.78 |
spac=0.01 |
line X loc=6.8 |
spac=0.01 |
line X loc=6.83 |
spac=0.03 |
line X loc=7.07 |
spac=0.03 |
line X loc=7.1 |
spac=0.01 |
line X loc=7.14 |
spac=0.01 |
line X loc=7.16 |
spac=0.02 |
line X loc=7.18 |
spac=0.01 |
line X loc=7.22 |
spac=0.01 |
line X loc=7.25 |
spac=0.03 |
line X loc=7.43 |
spac=0.03 |
line X loc=7.46 |
spac=0.01 |
line X loc=7.5 |
spac=0.01 |
line X loc=7.6 |
spac=0.1 |
line X loc=8.46 |
spac=0.1 |
line X loc=8.56 |
spac=0.01 |
line X loc=8.6 |
spac=0.01 |
line X loc=8.63 |
spac=0.02 |
line X loc=8.66 |
spac=0.02 |
line X loc=8.69 |
spac=0.01 |
line X loc=8.74 |
spac=0.01 |
line X loc=8.77 |
spac=0.03 |
line X loc=8.91 |
spac=0.03 |
line X loc=8.94 |
spac=0.01 |
line X loc=8.98 |
spac=0.01 |
line X loc=9.01 |
spac=0.03 |
line X loc=9.09 |
spac=0.03 |
line X loc=9.12 |
spac=0.01 |
line X loc=9.16 |
spac=0.01 |
line X loc=9.26 |
spac=0.1 |
87
line X loc=10.24 |
spac=0.1 |
line X loc=10.34 |
spac=0.01 |
line X loc=10.38 |
spac=0.01 |
line X loc=10.41 |
spac=0.03 |
line X loc=10.49 |
spac=0.03 |
line X loc=10.52 |
spac=0.01 |
line X loc=10.56 |
spac=0.01 |
line X loc=10.55 |
spac=0.03 |
line X loc=10.73 |
spac=0.03 |
line X loc=10.76 |
spac=0.01 |
line X loc=10.8 |
spac=0.01 |
line X loc=10.83 |
spac=0.03 |
line X loc=10.89 |
spac=0.03 |
line X loc=10.92 |
spac=0.01 |
line X loc=10.94 |
spac=0.01 |
line X loc=11.04 |
spac=0.1 |
line X loc=11.2 |
spac=0.1 |
# по оси Z
line Z loc=-0.2 spac=0.01 line Z loc=0.1 spac=0.01 line Z loc=0.2 spac=0.1 line Z loc=0.5 spac=0.1
#Создаем p-карман для базы биполярного транзистора deposit material="photoresist" thick=0.4
etch DRY material="photoresist" thick=0.31 between="8.65,9.05" etch DRY material="photoresist" thick=0.31 between="10.45,10.85" implant boron dose=1e13 energy=11
strip resist
#Создаем p-карман для n-транзистора
deposit material="photoresist" thick=0.4
etch DRY material="photoresist" thick=0.36 between="0.15,5.35" implant boron dose=5e11 energy=10
strip resist
diffuse time=10 temp=900
# Создаем n-карман для эмиттера биполярного транзистора deposit material="photoresist" thick=0.4
etch DRY material="photoresist" thick=0.33 between="8.75,8.93" etch DRY material="photoresist" thick=0.33 between="10.55,10.73" implant phos dose=1e18 energy=14
strip resist
88
# Создаем карманы n+-типа |
|
deposit material="photoresist" thick=0.4 |
|
etch DRY material="photoresist" thick=0.34 |
between="0.52,0.77" |
etch DRY material="photoresist" thick=0.34 |
between="1.03,1.26" |
etch DRY material="photoresist" thick=0.34 |
between="2.52,2.77" |
etch DRY material="photoresist" thick=0.34 |
between="3.03,3.26" |
etch DRY material="photoresist" thick=0.34 |
between="4.52,4.77" |
etch DRY material="photoresist" thick=0.34 |
between="5.03,5.26" |
etch DRY material="photoresist" thick=0.345 |
between="7.27,7.42" |
implant phos dose=5e16 energy=11 |
|
strip resist |
|
# Создаем карманы р+-типа
deposit material="photoresist" thick=0.4
etch DRY material="photoresist" thick=0.3 between="0.24,0.29" etch DRY material="photoresist" thick=0.3 between="2.24,2.29" etch DRY material="photoresist" thick=0.3 between="4.24,4.29" etch DRY material="photoresist" thick=0.3 between="6.41,6.49" etch DRY material="photoresist" thick=0.3 between="6.91,6.99" implant boron dose=7e18 energy=10
strip resist
diffuse time=10 temp=900
# Создаем изолированный поликремниевый затвор у МОП-транзисторов deposit material="oxide" thick=0.01 between="0.81,0.99"
deposit material="oxide" thick=0.01 between="2.81,2.99" deposit material="oxide" thick=0.01 between="4.81,4.99" deposit material="oxide" thick=0.01 between="6.61,6.79" deposit material="polysilicon" thick=0.04 between="0.81,0.99" deposit material="polysilicon" thick=0.04 between="2.81,2.99" deposit material="polysilicon" thick=0.04 between="4.81,4.99" deposit material="polysilicon" thick=0.04 between="6.61,6.79" deposit material="Si3N4" thick=0 between="0.79,0.81" max deposit material="Si3N4" thick=0 between="0.99,1.01" max deposit material="Si3N4" thick=0 between="2.79,2.81" max deposit material="Si3N4" thick=0 between="2.99,3.01" max deposit material="Si3N4" thick=0 between="4.79,4.81" max deposit material="Si3N4" thick=0 between="4.99,5.01" max deposit material="Si3N4" thick=0 between="6.59,6.61" max deposit material="Si3N4" thick=0 between="6.79,6.81" max deposit material="oxide" thick=0.04 between="0.75,1.05" deposit material="oxide" thick=0.04 between="2.75,3.05" deposit material="oxide" thick=0.04 between="4.75,5.05" deposit material="oxide" thick=0.04 between="6.55,6.85"
89