Philips Semiconductors Product specification
Rectifier diodes |
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BYV118F series |
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schottky barrier |
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GENERAL DESCRIPTION |
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QUICK REFERENCE DATA |
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Dual, low leakage, platinum barrier, |
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SYMBOL |
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PARAMETER |
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MAX. |
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MAX. |
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MAX. |
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UNIT |
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schottky barrier rectifier diodes in a |
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BYV118F- |
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35 |
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40 |
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45 |
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full pack plastic envelope featuring |
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low forward voltage drop and |
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VRRM |
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Repetitive peak reverse |
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45 |
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V |
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absence of stored charge. These |
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voltage |
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devices |
can withstand |
reverse |
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VF |
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Forward voltage |
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0.6 |
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0.6 |
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0.6 |
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V |
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voltage |
transients and |
have |
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IO(AV) |
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Output current (both |
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10 |
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A |
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guaranteed reverse surge capability. |
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diodes conducting) |
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The devices are intended for use in |
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switched mode power supplies and |
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high frequency circuits in general |
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where low conduction and zero |
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switching losses are important. |
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PINNING - SOT186 |
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PIN CONFIGURATION |
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PIN |
DESCRIPTION |
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case |
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1 |
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anode 1 (a) |
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a1 |
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a2 |
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2cathode (k)
3anode 2 (a)
k
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
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UNIT |
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-35 |
-40 |
-45 |
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VRRM |
Repetitive peak reverse voltage |
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35 |
40 |
45 |
V |
VRWM |
Crest working reverse voltage |
Ths ≤ 123˚C |
- |
35 |
40 |
45 |
V |
VR |
Continuous reverse voltage |
- |
35 |
40 |
45 |
V |
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IO(AV) |
Output current (both diodes |
square wave; δ = 0.5; |
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10 |
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A |
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conducting) |
Ths ≤ 110 ˚C |
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9 |
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A |
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sinusoidal; a = 1.57; |
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IO(RMS) |
RMS forward current |
Ths ≤ 113 ˚C |
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14 |
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A |
t = 25 μs; δ = 0.5; |
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IFRM |
Repetitive peak forward current |
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10 |
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A |
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IFSM |
per diode |
Ths ≤ 110 ˚C |
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Non-repetitive peak forward |
t = 10 ms |
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100 |
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A |
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current per diode. |
t = 8.3 ms |
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110 |
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A |
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sinusoidal; Tj = 125 ˚C prior |
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to surge; with reapplied |
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I2t |
I2t for fusing |
VRWM(max) |
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50 |
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A2s |
t = 10 ms |
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IRRM |
Repetitive peak reverse current |
tp = 2 μs; δ = 0.001 |
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A |
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per diode. |
tp = 100 μs |
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IRSM |
Non-repetitive peak reverse |
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1 |
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A |
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current per diode. |
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Tstg |
Storage temperature |
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-65 |
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175 |
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˚C |
Tj |
Operating junction temperature |
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150 |
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˚C |
October 1994 |
1 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
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BYV118F series |
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schottky barrier |
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ISOLATION |
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Ths = 25 ˚C unless otherwise specified |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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MIN. |
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TYP. |
MAX. |
UNIT |
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Visol |
Repetitive peak voltage from all |
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R.H. ≤ 65% ; clean and dustfree |
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1500 |
V |
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three terminals to external |
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heatsink |
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Cisol |
Capacitance from T2 to external |
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f = 1 MHz |
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12 |
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pF |
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heatsink |
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THERMAL RESISTANCES |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Rth j-hs |
Thermal resistance junction to |
per diode |
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6.5 |
K/W |
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heatsink |
both diodes |
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5.5 |
K/W |
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(with heatsink compound) |
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Rth j-a |
Thermal resistance junction to |
in free air. |
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55 |
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K/W |
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ambient |
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STATIC CHARACTERISTICS |
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Tj = 25 ˚C unless otherwise stated |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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VF |
Forward voltage (per diode) |
IF = 5 A; Tj = 150˚C |
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0.50 |
0.60 |
V |
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IF = 10 A |
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0.74 |
0.87 |
V |
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IR |
Reverse current (per diode) |
VR = VRWM |
- |
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50 |
100 |
μA |
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Cd |
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VR = VRWM; Tj = 125 ˚C |
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2.5 |
15 |
mA |
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Junction capacitance (per |
f = 1 MHz; VR = 5V; Tj = 25 ˚C to |
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200 |
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pF |
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diode) |
125 ˚C |
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October 1994 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BYV118F series |
schottky barrier |
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5 |
PF / W |
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BYV118 |
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Ths(max) / C |
117.5 |
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Vo = 0.4750 V |
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D = 1.0 |
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Rs = 0.0250 Ohms |
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4 |
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0.5 |
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124 |
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3 |
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0.2 |
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140.5 |
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0.1 |
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2 |
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137 |
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I |
tp |
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D = |
tp |
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1 |
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T |
143.5 |
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T |
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t |
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150 |
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8 |
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IF(AV) / A |
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Fig.1. Maximum forward dissipation PF = f(IF(AV)) per diode; square current waveform where
IF(AV) =IF(RMS) x ÖD.
4 |
PF / W |
BYV118 |
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Ths(max) / C |
124 |
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Vo = 0.475 V |
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3.5 |
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Rs = 0.025 Ohms |
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a = 1.57 |
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3 |
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1.9 |
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130.5 |
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2.2 |
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2.8 |
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2.5 |
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4 |
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2 |
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137 |
1.5 |
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1 |
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143.5 |
0.5 |
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4 |
150 |
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IF(AV) / A |
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Fig.2. Maximum forward dissipation PF = f(IF(AV)) per |
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diode; sinusoidal current waveform where a = form |
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factor = IF(RMS) / IF(AV). |
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IF / A |
BYV118 |
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50 |
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Tj = 25 C |
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Tj = 150 C |
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40
30 |
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20 |
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max |
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10 |
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0 |
0 |
0.2 |
0.4 |
0.6 |
0.8 |
1 |
1.2 |
1.4 |
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VF / V |
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Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj
IR / mA |
PBYR645CT |
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10 |
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150 C |
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1 |
125 C |
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0.1 |
100 C |
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75 C |
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0.01 |
Tj = 50 C |
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0.001 |
25 |
50 |
0 |
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VR/ V |
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Fig.4. Typical reverse leakage current per diode; IR = f(VR); parameter Tj
Cd / pF |
PBYR645CT |
1000
100
10
1 |
10 |
100 |
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VR / V |
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Fig.5. Typical junction capacitance per diode; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
Zth j-hs (K/W) |
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0.1 |
PD |
tp |
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t |
0.01 |
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10us |
1ms |
0.1s |
10s |
tp (s)
Fig.6. Transient thermal impedance; per diode; Zth j-hs = f(tp).
October 1994 |
3 |
Rev 1.100 |
Philips Semiconductors Product specification
Rectifier diodes |
BYV118F series |
schottky barrier |
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MECHANICAL DATA |
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Dimensions in mm
Net Mass: 2 g
10.2 |
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max |
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5.7 |
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max |
0.9 |
3.2 |
0.5 |
3.0 |
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4.4
4.0
seating plane
3.5 max |
4.4 |
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not tinned |
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13.5 min
1 2 3
0.4 M 
0.9 0.7
2.54
5.08
4.4 max
2.9 max
7.9
7.5
17 max
0.55 max
1.3
top view
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2.Epoxy meets UL94 V0 at 1/8".
October 1994 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Rectifier diodes |
BYV118F series |
schottky barrier |
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DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1994
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1994 |
5 |
Rev 1.100 |