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Philips Semiconductors Product specification

Rectifier diodes

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PBYR1645F series

 

schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GENERAL DESCRIPTION

QUICK REFERENCE DATA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Low

leakage, platinum barrier,

 

SYMBOL

 

 

 

PARAMETER

 

 

 

 

 

MAX.

 

 

MAX.

 

MAX.

 

UNIT

 

schottky rectifier diodes in a full pack,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PBYR16-

 

 

35F

 

 

40F

 

45F

 

 

 

 

plastic

 

 

 

envelope featuring low

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

forward voltage drop and absence of

 

VRRM

 

 

 

 

Repetitive peak reverse

 

35

 

 

 

40

 

 

45

 

 

V

 

stored charge. These devices can

 

 

 

 

 

 

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

withstand reverse voltage transients

 

VF

 

 

 

 

Forward voltage

 

 

 

 

 

0.6

 

 

 

0.6

 

 

0.6

 

 

V

 

and have guaranteed reverse surge

 

IF(AV)

 

 

 

 

Forward current

 

 

 

 

 

16

 

 

 

16

 

 

16

 

 

A

 

capability. The devices are intended

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

for use in switched mode power

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

supplies and high frequency circuits

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

in general where low conduction and

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

zero switching losses are important.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PINNING - SOD100

PIN CONFIGURATION

 

 

SYMBOL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN

 

 

 

 

DESCRIPTION

 

 

 

 

 

case

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

cathode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

a

 

 

 

k

 

 

 

 

2

 

 

 

anode

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

case

 

 

 

isolated

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Limiting values in accordance with the Absolute Maximum System (IEC 134).

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

 

 

CONDITIONS

 

MIN.

 

 

 

 

 

MAX.

 

 

 

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-35

 

 

 

-40

 

 

-45

 

 

 

 

 

 

VRRM

 

 

 

 

Repetitive peak reverse voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

 

35

 

 

 

40

 

 

45

 

 

V

 

 

VRWM

 

 

 

 

Crest working reverse voltage

 

Ths 122 ˚C

 

 

 

 

-

 

 

 

35

 

 

 

40

 

 

45

 

 

V

 

 

VR

 

 

 

 

Continuous reverse voltage

 

 

 

 

 

-

 

 

 

35

 

 

 

40

 

 

45

 

 

V

 

 

IF(AV)

 

 

 

 

Average forward current

 

 

 

square wave; δ = 0.5;

-

 

 

 

 

 

 

 

16

 

 

 

 

 

A

 

 

IF(RMS)

 

 

 

 

RMS forward current

 

 

 

Ths

100 ˚C

 

 

 

 

-

 

 

 

 

 

 

 

22.6

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

t = 25 μs; δ = 0.5;

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IFRM

 

 

 

 

Repetitive peak forward current

 

-

 

 

 

 

 

 

 

32

 

 

 

 

 

A

 

 

IFSM

 

 

 

 

 

 

 

 

 

 

Ths

100 ˚C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Non-repetitive peak forward

 

t = 10 ms

 

 

 

 

-

 

 

 

 

 

 

 

120

 

 

 

 

 

A

 

 

 

 

 

 

 

current

 

 

 

t = 8.3 ms

 

 

 

 

-

 

 

 

 

 

 

 

132

 

 

 

 

 

A

 

 

 

 

 

 

 

 

 

 

 

 

 

sinusoidal; Tj = 125 ˚C prior

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

to surge; with reapplied

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I2t

 

 

 

 

I2t for fusing

 

 

 

VRWM(max)

 

 

 

 

-

 

 

 

 

 

 

 

72

 

 

 

 

 

A2s

 

 

 

 

 

 

 

 

 

t = 10 ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IRRM

 

 

 

 

Repetitive peak reverse current

 

tp = 2

μs; δ = 0.001

-

 

 

 

 

 

 

 

1

 

 

 

 

 

A

 

 

IRSM

 

 

 

 

Non-repetitive peak reverse

 

tp = 100 μs

 

 

 

 

-

 

 

 

 

 

 

 

1

 

 

 

 

 

A

 

 

 

 

 

 

 

current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Tstg

 

 

 

 

Storage temperature

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

-65

 

 

 

 

 

 

175

 

 

 

 

 

˚C

 

 

Tj

 

 

 

 

Operating junction temperature

 

 

 

 

 

 

 

 

 

 

 

 

 

-

 

 

 

 

 

 

 

150

 

 

 

 

 

˚C

 

October 1994

1

Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes

 

 

 

PBYR1645F series

 

schottky barrier

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ISOLATION

 

 

 

 

 

 

 

 

 

Ths = 25 ˚C unless otherwise specified

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

CONDITIONS

 

MIN.

 

TYP.

MAX.

UNIT

 

Visol

Repetitive peak voltage from

 

R.H. 65% ; clean and dustfree

 

-

 

-

1500

V

 

 

both terminals to external

 

 

 

 

 

 

 

 

 

 

heatsink

 

 

 

 

 

 

 

 

 

Cisol

Capacitance from cathode to

 

f = 1 MHz

 

-

 

12

-

pF

 

 

external heatsink

 

 

 

 

 

 

 

 

 

THERMAL RESISTANCES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

Rth j-hs

Thermal resistance junction to

with heatsink compound

-

 

-

4.2

K/W

 

 

heatsink

 

 

 

 

 

 

 

 

 

Rth j-a

Thermal resistance junction to

in free air.

-

 

55

-

K/W

 

 

ambient

 

 

 

 

 

 

 

 

 

STATIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Tj = 25 ˚C unless otherwise stated

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

 

VF

Forward voltage

IF = 16 A; Tj = 125˚C

-

 

0.53

0.60

V

 

 

 

IF = 16 A

-

 

0.63

0.68

V

 

IR

Reverse current

VR = VRWM

-

 

100

200

μA

 

 

 

VR = VRWM; Tj = 125 ˚C

-

 

12

40

mA

 

Cd

Junction capacitance

f = 1MHz; VR = 5V; Tj = 25 ˚C to

-

 

800

-

pF

 

 

 

125 ˚C

 

 

 

 

 

 

October 1994

2

Rev 1.100

Philips Semiconductors

Product specification

 

 

Rectifier diodes

PBYR1645F series

schottky barrier

 

 

 

PF / W

 

PBYR1645F

 

 

Ths(max) / C

15

 

 

 

 

 

 

87

Vo = 0.3020 V

 

 

 

 

 

D = 1.0

 

Rs = 0.0139 Ohms

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

0.2

 

 

 

 

 

10

 

0.1

 

 

 

 

108

5

 

 

I

tp

 

tp

129

 

 

 

 

D = T

 

 

 

 

 

 

 

 

 

 

 

 

 

T

t

 

 

 

 

 

 

 

150

0

5

10

15

 

 

20

0

 

 

25

 

 

IF(AV) / A

 

 

 

 

Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x ÖD.

14

PF / W

 

PBYR1645F

 

Ths(max) / C91.2

 

Vo = 0.302 V

 

 

 

 

 

Rs = 0.0139 Ohms

 

 

 

a = 1.57

12

 

 

 

 

 

 

 

 

99.6

 

 

 

2.2

1.9

10

 

 

108

 

4

2.8

 

 

 

 

 

8

 

 

 

 

116.4

6

 

 

 

 

124.8

4

 

 

 

 

133.2

2

 

 

 

 

141.6

0

0

5

10

 

150

 

15

 

 

 

IF(AV) / A

 

 

Fig.2. Maximum forward dissipation PF = f(IF(AV));

 

sinusoidal current waveform where a = form

 

 

factor = IF(RMS) / IF(AV).

 

 

IF / A

 

PBYR1645

 

 

 

50

 

typ

max

 

 

Tj = 25 C

 

 

 

Tj = 125 C

 

 

 

 

40

30

20

10

0

0

0.2

0.4

0.6

0.8

1

1.2

1.4

 

 

 

VF / V

 

 

 

 

Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj

100

IR / mA

 

PBYR1645

 

 

 

10

150 C

 

 

 

 

 

 

125 C

 

 

1

100 C

 

 

 

 

 

0.1

75 C

 

 

 

Tj = 50 C

 

 

0.01

 

 

 

 

0

25

50

 

 

VR/ V

 

Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj

Cd / pF PBYR1645

10000

1000

100

 

 

1

10

100

VR / V

Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.

Zth j-hs (K/W)

 

 

 

10

 

 

 

1

 

 

 

0.1

PD

tp

 

 

 

 

 

 

t

0.01

 

 

 

10us

1ms

0.1s

10s

 

tp / s

 

 

Fig.6. Transient thermal impedance; Zth j-hs = f(tp).

October 1994

3

Rev 1.100

Philips Semiconductors Product specification

Rectifier diodes

PBYR1645F series

schottky barrier

 

 

 

MECHANICAL DATA

 

Dimensions in mm

 

10.2

 

Net Mass: 2 g

max

 

 

5.7

 

 

max

0.9

 

3.2

0.5

 

3.0

 

4.4

4.0

seating plane

3.5 max

4.4

not tinned

 

 

13.5 min

k a

0.4M 0.9

0.7

5.08

4.4 max

2.9 max

7.9

7.5

17 max

0.55 max

1.3

top view

Fig.7. SOD100; The seating plane is electrically isolated from all terminals.

Notes

1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2.Epoxy meets UL94 V0 at 1/8".

October 1994

4

Rev 1.100

Philips Semiconductors

Product specification

 

 

Rectifier diodes

PBYR1645F series

schottky barrier

 

 

 

DEFINITIONS

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

 

 

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

© Philips Electronics N.V. 1994

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

October 1994

5

Rev 1.100

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