Philips Semiconductors Product specification
Triacs |
|
|
|
|
|
BTA216X series B |
|
||||||||||
high commutation |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
||||||
Glass passivated high commutation |
|
SYMBOL |
|
PARAMETER |
|
|
|
MAX. |
MAX. |
UNIT |
|
||||||
triacs in a full pack, plastic envelope |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BTA216X- |
|
600B |
|
800B |
|
|
|
|
||||
intended for use in motor control |
|
|
|
|
|
|
|
|
|
|
|
||||||
circuits or with other highly inductive |
|
VDRM |
|
Repetitive peak off-state voltages |
|
600 |
|
|
800 |
|
|
V |
|
||||
loads. These devices will commutate |
|
IT(RMS) |
|
RMS on-state current |
|
|
|
16 |
|
|
16 |
|
|
A |
|
||
the full rated rms current at the |
|
ITSM |
|
Non-repetitive peak on-state current |
|
140 |
|
|
140 |
|
|
A |
|
||||
maximum rated junction temperature, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
without the aid of a snubber. |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PINNING - SOT186A |
PIN CONFIGURATION |
SYMBOL |
|
|
|
|
|
|
|
|
|
||||||
PIN DESCRIPTION
1main terminal 1
2main terminal 2
3gate
case isolated
case
T2 |
T1 |
1 2 3 |
G |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
|
MAX. |
UNIT |
|
|
|
|
|
-600 |
|
-800 |
|
V |
Repetitive peak off-state |
|
- |
6001 |
|
800 |
V |
DRM |
voltages |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
full sine wave; Ths ≤ 38 ˚C |
|
|
|
|
|
IT(RMS) |
RMS on-state current |
- |
|
16 |
A |
||
ITSM |
Non-repetitive peak |
full sine wave; Tj = 125 ˚C prior |
|
|
|
|
|
|
on-state current |
to surge; with reapplied VDRM(max) |
- |
|
140 |
A |
|
|
|
t = 20 ms |
|
||||
|
|
t = 16.7 ms |
- |
|
180 |
A |
|
I2t |
I2t for fusing |
t = 10 ms |
- |
|
98 |
A2s |
|
dIT/dt |
Repetitive rate of rise of |
ITM = 20 A; IG = 0.2 A; |
|
|
100 |
A/μs |
|
|
on-state current after |
dIG/dt = 0.2 A/μs |
|
|
|
|
|
|
triggering |
|
|
|
|
|
|
IGM |
Peak gate current |
|
- |
|
2 |
A |
|
VGM |
Peak gate voltage |
|
- |
|
5 |
V |
|
PGM |
Peak gate power |
|
- |
|
5 |
W |
|
PG(AV) |
Average gate power |
over any 20 ms period |
- |
|
0.5 |
W |
|
Tstg |
Storage temperature |
|
-40 |
|
150 |
˚C |
|
Tj |
Operating junction |
|
- |
|
125 |
˚C |
|
|
temperature |
|
|
|
|
|
|
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
February 1996 |
1 |
Rev 1.100 |
Philips Semiconductors Product specification
Triacs |
|
|
|
|
|
|
BTA216X series B |
|
||||
high commutation |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
ISOLATION LIMITING VALUE & CHARACTERISTIC |
|
|
|
|
|
|
||||||
Ths = 25 ˚C unless otherwise specified |
|
|
|
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
|
CONDITIONS |
|
MIN. |
|
TYP. |
MAX. |
UNIT |
|
||
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
|
- |
|
|
2500 |
V |
|
|||
|
three terminals to external |
|
waveform; |
|
|
|
|
|
|
|
||
|
heatsink |
|
R.H. |
≤ |
65% ; clean and dustfree |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
Cisol |
Capacitance from T2 to external |
f = 1 MHz |
|
- |
|
10 |
- |
pF |
|
|||
|
heatsink |
|
|
|
|
|
|
|
|
|
|
|
THERMAL RESISTANCES |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|||||
Rth j-hs |
Thermal resistance |
full or half cycle |
- |
|
- |
4.0 |
K/W |
|
||||
|
junction to heatsink |
with heatsink compound |
|
|
||||||||
|
|
without heatsink compound |
- |
|
- |
5.5 |
K/W |
|
||||
Rth j-a |
Thermal resistance |
in free air |
|
|
|
- |
|
55 |
- |
K/W |
|
|
|
junction to ambient |
|
|
|
|
|
|
|
|
|
|
|
STATIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
Tj = 25 ˚C unless otherwise stated |
|
|
|
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|||||
I |
Gate trigger current2 |
V = 12 V; I |
T |
= 0.1 A |
|
|
|
|
|
|
||
GT |
|
D |
|
T2+ G+ |
2 |
|
18 |
50 |
mA |
|
||
|
|
|
|
|
|
|
||||||
|
|
|
|
|
T2+ G- |
2 |
|
21 |
50 |
mA |
|
|
|
|
|
|
|
T2- G- |
2 |
|
34 |
50 |
mA |
|
|
IL |
Latching current |
VD = 12 V; IGT = 0.1 A |
- |
|
31 |
60 |
mA |
|
||||
|
|
|
|
|
T2+ G+ |
|
|
|||||
|
|
|
|
|
T2+ G- |
- |
|
34 |
90 |
mA |
|
|
|
|
|
|
|
T2- G- |
- |
|
30 |
60 |
mA |
|
|
IH |
Holding current |
VD = 12 V; IGT = 0.1 A |
- |
|
31 |
60 |
mA |
|
||||
VT |
On-state voltage |
IT = 20 A |
|
|
|
- |
|
1.2 |
1.5 |
V |
|
|
VGT |
Gate trigger voltage |
VD = 12 V; IT = 0.1 A |
- |
|
0.7 |
1.5 |
V |
|
||||
ID |
|
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C |
0.25 |
|
0.4 |
- |
V |
|
||||
Off-state leakage current |
VD = VDRM(max); Tj = 125 ˚C |
- |
|
0.1 |
0.5 |
mA |
|
|||||
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
Tj = 25 ˚C unless otherwise stated |
|
|
|
|
|
|
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|||||
|
|
|
|
|
|
|
|
|
|
|
||
dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); Tj = 125 ˚C; |
1000 |
|
4000 |
- |
V/μs |
|
||||
|
off-state voltage |
exponential waveform; gate open circuit |
|
|
|
|
|
|
||||
dIcom/dt |
Critical rate of change of |
VDM = 400 V; Tj = 125 ˚C; IT(RMS) = 16 A; |
- |
|
28 |
- |
A/ms |
|
||||
|
commutating current |
without snubber; gate open circuit |
|
|
|
|
μs |
|
||||
tgt |
Gate controlled turn-on |
ITM = 20 A; VD = VDRM(max); IG = 0.1 A; |
- |
|
2 |
- |
|
|||||
|
time |
dIG/dt = 5 A/μs |
|
|
|
|
|
|
||||
2 Device does not trigger in the T2-, G+ quadrant.
February 1996 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BTA216X series B |
high commutation |
|
|
|
25 |
Ptot / W |
|
BT139 |
|
Ths(max) / C 25 |
|
|
|
|
||||
|
|
|
|
|
= 180 |
|
20 |
|
|
|
|
120 |
45 |
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
90 |
|
15 |
|
|
|
|
60 |
65 |
|
|
|
|
|
|
|
10 |
|
|
|
|
30 |
85 |
|
|
|
|
|
||
5 |
|
|
|
|
|
105 |
0 |
0 |
5 |
10 |
15 |
|
125 |
|
|
20 |
||||
|
|
|
IT(RMS) / A |
|
|
|
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
1000 |
ITSM / A |
BTA216 |
|
||
|
|
dIT/dt limit |
|
|
|
100 |
|
|
|
|
|
|
|
|
|
IT |
ITSM |
|
|
|
|
T |
time |
10 |
|
|
|
Tj initial = 125 C max |
|
|
100us |
1ms |
10ms |
100ms |
|
10us |
|||||
|
|
|
T / s |
|
|
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
150 |
ITSM / A |
|
BT139 |
|
|
|
|
IT |
ITSM |
|
|
|
T |
time |
100 |
|
|
Tj initial = 125 C max |
|
|
|
|
||
50 |
|
|
|
|
0 |
1 |
10 |
100 |
1000 |
|
|
Number of cycles at 50Hz |
|
|
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
IT(RMS) / A |
|
BT139X |
|
|
20 |
|
|
|
|
|
|
38 C |
|
|
15 |
|
|
|
|
10 |
|
|
|
|
5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Ths / C |
|
|
Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
50 |
IT(RMS) / A |
BT139 |
|
|
40 |
|
|
|
|
30 |
|
|
|
|
20 |
|
|
|
|
10 |
|
|
|
|
0 |
|
0.1 |
1 |
10 |
0.01 |
||||
|
|
surge duration / s |
|
|
Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 38˚C.
|
VGT(Tj) |
|
BT136 |
|
|
1.6 |
VGT(25 C) |
|
|
||
1.4 |
|
|
|
|
|
1.2 |
|
|
|
|
|
1 |
|
|
|
|
|
0.8 |
|
|
|
|
|
0.6 |
|
|
|
|
|
0.4 |
|
0 |
50 |
100 |
150 |
-50 |
|||||
|
|
|
Tj / |
C |
|
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 1996 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BTA216X series B |
high commutation |
|
|
|
|
IGT(Tj) |
|
|
|
|
3 |
IGT(25 C) |
|
BTA216 |
T2+ G+ |
|
|
|
|
|
|
|
2.5 |
|
|
|
T2+ G- |
|
|
|
|
T2- G- |
|
|
|
|
|
|
|
|
2 |
|
|
|
|
|
1.5 |
|
|
|
|
|
1 |
|
|
|
|
|
0.5 |
|
|
|
|
|
0 |
|
0 |
50 |
100 |
150 |
-50 |
|||||
|
|
|
Tj / C |
|
|
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) |
|
|
|
|
IL(25 C) |
TRIAC |
|
|
|
3 |
|
|
|
|
2.5 |
|
|
|
|
2 |
|
|
|
|
1.5 |
|
|
|
|
1 |
|
|
|
|
0.5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Tj / C |
|
|
Fig.8. |
Normalised latching current IL(Tj)/ IL(25˚C), |
|||
|
versus junction temperature Tj. |
|
||
IH(Tj) |
|
|
|
|
3 IH(25C) |
TRIAC |
|
|
|
2.5 |
|
|
|
|
2 |
|
|
|
|
1.5 |
|
|
|
|
1 |
|
|
|
|
0.5 |
|
|
|
|
0 |
0 |
50 |
100 |
150 |
-50 |
||||
|
|
Tj / C |
|
|
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.
50 |
IT / A |
|
BT139 |
|
|
Tj = 125 C |
|
|
|
||
|
|
|
|
||
40 |
Tj = 25 C |
|
typ |
max |
|
|
|||||
|
|
||||
Vo = 1.195 V |
|
|
|
||
|
|
|
|
||
|
Rs = 0.018 Ohms |
|
|
|
|
30 |
|
|
|
|
|
|
|
|
|
|
|
20
10
0
0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
|
|
|
VT / V |
|
|
|
Fig.10. Typical and maximum on-state characteristic.
10 |
Zth j-hs (K/W) |
|
BT139 |
|
|
|
|
|
with heatsink compound |
|
|
|
|||
|
without heatsink compound |
|
|
|
|||
1 |
|
|
unidirectional |
bidirectional |
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
|
|
|
P |
t p |
|
|
|
|
|
|
D |
|
|
|
0.01 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
t |
0.001 |
|
0.1ms |
1ms |
10ms |
0.1s |
1s |
10s |
10us |
|||||||
|
|
|
|
tp / s |
|
|
|
Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp.
dIcom/dt (A/ms) |
|
BTA216 |
|
|
|
|
1000 |
|
|
|
|
|
|
100 |
|
|
|
|
|
|
10 |
|
|
|
|
|
|
120 |
40 |
60 |
80 |
100 |
120 |
140 |
|
|
|
Tj / C |
|
|
|
Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature.
February 1996 |
4 |
Rev 1.100 |
Philips Semiconductors Product specification
Triacs |
BTA216X series B |
high commutation |
|
|
|
MECHANICAL DATA |
|
Dimensions in mm
Net Mass: 2 g
|
10.3 |
|
|
|
|
|
max |
|
|
4.6 |
|
|
|
|
|
|
|
|
|
|
|
max |
|
|
3.2 |
|
|
2.9 max |
|
|
3.0 |
|
|
||
Recesses (2x) |
|
2.8 |
|
|
|
|
|
|
|
|
|
2.5 |
|
|
|
6.4 |
|
0.8 max. depth |
|
|
|
|
|
|
|
|
|
seating |
15.8 |
|
|
15.8 |
19 |
max |
|
|
|
max. |
max. |
plane |
|
3 max. |
|
|
|
|
|
not tinned |
|
|
|
|
|
|
|
3 |
|
2.5 |
|
|
|
|
|
|
|
13.5 |
|
|
|
|
|
min. |
|
|
|
|
|
1 |
2 |
3 |
|
|
|
0.4 M |
|
|
|
|
1.0 (2x) |
|
|
2.54 |
|
0.6 |
0.9 |
|
|
|
0.5 |
||
|
|
|
0.7 |
||
|
|
|
|
||
|
|
|
|
|
|
|
5.08 |
|
|
2.5 |
1.3 |
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2.The improved isolation rating applies only to the SOT186 version A envelope.
February 1996 |
5 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
|
Triacs |
BTA216X series B |
high commutation |
|
|
|
DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
|
|
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1996 |
6 |
Rev 1.100 |