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Philips Semiconductors Product specification

Triacs

BT139X series H

high noise immunity

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated triacs in a full pack,

SYMBOL

PARAMETER

MAX.

UNIT

plastic envelope, intended for use in

BT139X-

500H

600H

800H

applications

requiring

high noise

immunity in addition to high,

VDRM

Repetitive peak off-state

500

600

800

bidirectional

blocking

voltage

voltages

capability

and

thermal

cycling

IT(RMS)

RMS on-state current

performance. Typical

applications

ITSM

Non-repetitive peak on-state

140

include motor

control,

industrial

current

lighting, heating and static switching.

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

PIN DESCRIPTION

1main terminal 1

2main terminal 2

3gate

case isolated

case

T2	T1
1 2 3	G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT

				-500	-600	-800
V	Repetitive peak off-state		-	5001	6001	800	V
DRM	voltages
	voltages
		full sine wave; Ths ≤ 38 ˚C
IT(RMS)	RMS on-state current	full sine wave; Ths ≤ 38 ˚C	-		16		A
ITSM	Non-repetitive peak	full sine wave; Tj = 125 ˚C prior
	on-state current	to surge; with reapplied VDRM(max)	-		140		A
		t = 20 ms	-		140		A
		t = 16.7 ms	-		150		A
I2t	I2t for fusing	t = 10 ms	-		98		A2s
dIT/dt	Repetitive rate of rise of	ITM = 20 A; IG = 0.2 A;
	on-state current after	dIG/dt = 0.2 A/μs					A/μs
	triggering	T2+ G+	-		50		A/μs
		T2+ G-	-		50		A/μs
		T2- G-	-		50		A/μs
		T2- G+	-		10		A/μs
IGM	Peak gate current		-		2		A
VGM	Peak gate voltage		-		5		V
PGM	Peak gate power		-		5		W
PG(AV)	Average gate power	over any 20 ms period	-		0.5		W
Tstg	Storage temperature		-40		150		˚C
Tj	Operating junction		-		125		˚C
	temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

February 1996

Rev 1.100

Philips Semiconductors Product specification

Triacs					BT139X series H
high noise immunity

ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL	PARAMETER		CONDITIONS	MIN.		TYP.	MAX.	UNIT
Visol	R.M.S. isolation voltage from all		f = 50-60 Hz; sinusoidal	-			2500	V
	three terminals to external		waveform;
	heatsink		R.H. ≤ 65% ; clean and dustfree

Cisol	Capacitance from T2 to external		f = 1 MHz	-	10		-	pF
	heatsink
THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
Rth j-hs	Thermal resistance	full or half cycle		-		-	4.0	K/W
	junction to heatsink	with heatsink compound		-		-	4.0	K/W
		without heatsink compound		-		-	5.5	K/W
Rth j-a	Thermal resistance	in free air		-		55	-	K/W
	junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT
IGT	Gate trigger current	VD = 12 V; IT = 0.1 A		10		14	50	mA
			T2+ G+	10		14	50	mA
			T2+ G-	10		17	50	mA
			T2- G-	10		18	50	mA
			T2- G+	10		40	100	mA
IL	Latching current	VD = 12 V; IGT = 0.1 A		-		10	60	mA
			T2+ G+	-		10	60	mA
			T2+ G-	-		25	90	mA
			T2- G-	-		12	60	mA
			T2- G+	-		14	90	mA
IH	Holding current	VD = 12 V; IGT = 0.1 A		-		8	60	mA
VT	On-state voltage	IT = 20 A		-		1.2	1.6	V
VGT	Gate trigger voltage	VD = 12 V; IT = 0.1 A		-		0.7	1.5	V
		VD = 400 V; IT = 0.1 A; Tj = 125 ˚C		0.25		0.4	-	V
ID	Off-state leakage current	VD = VDRM(max); Tj = 125 ˚C		-		0.1	0.5	mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS		MIN.		TYP.	MAX.	UNIT

dVD/dt	Critical rate of rise of
	off-state voltage
dVcom/dt	Critical rate of change of
	commutating voltage
tgt	Gate controlled turn-on
	time

VDM = 67% VDRM(max); Tj = 125 ˚C;	200	500	-	V/μs
exponential waveform; gate open circuit				V/μs
VDM = 400 V; Tj = 95 ˚C; IT(RMS) = 16 A;	10	20	-	V/μs
dIcom/dt = 7.2 A/ms; gate open circuit				μs
ITM = 20 A; VD = VDRM(max); IG = 0.1 A;	-	2	-	μs
dIG/dt = 5 A/μs

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT139X series H
high noise immunity

25	Ptot / W		BT139		Ths(max) / C 25
25	Ptot / W				Ths(max) / C 25
					= 180
20					120	45
			1

					90
15					60	65
					60
10					30	85
10						85
5						105
0	0	5	10	15		125
	0	5	10	15		20
			IT(RMS) / A

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.

1000	ITSM / A		BT139
100
		dIT/dt limit
		T2- G+ quadrant		IT	ITSM
		T2- G+ quadrant
				T	time
10				Tj initial = 125 C max
10		100us	1ms	10ms	100ms
10us		100us	1ms	10ms	100ms
			T / s

Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.

150	ITSM / A		BT139
			IT	ITSM
			T	time
100			Tj initial = 125 C max
			Tj initial = 125 C max
50
0	1	10	100	1000
		Number of cycles at 50Hz

Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.

IT(RMS) / A		BT139X
20
		38 C
15
10
5
0	0	50	100	150
-50	0	50	100	150
		Ths / C

Fig.4. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.

50	IT(RMS) / A	BT139
40
30
20
10
0		0.1	1	10
0.01		0.1	1	10
		surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 38˚C.

	VGT(Tj)		BT136
1.6	VGT(25 C)		BT136
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50		0	50	100	150
			Tj /	C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT139X series H
high noise immunity

IGT(Tj)
IGT(25 C)		BT139H
3			T2+ G+
			T2+ G+
2.5			T2+ G-
2.5			T2- G-
			T2- G-
2			T2- G+
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)
IL(25 C)		TRIAC
3
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C
Fig.8.	Normalised latching current IL(Tj)/ IL(25˚C),
	versus junction temperature Tj.
IH(Tj)
3 IH(25C)		TRIAC
2.5
2
1.5
1
0.5
0	0	50	100	150
-50	0	50	100	150
		Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.

50	IT / A		BT139
50	Tj = 125 C
	Tj = 125 C
40	Tj = 25 C	typ		max
	Tj = 25 C

	Vo = 1.195 V
	Vo = 1.195 V
	Rs = 0.018 Ohms
30
30

0	0.5	1	1.5	2	2.5	3
			VT / V

Fig.10. Typical and maximum on-state characteristic.

10	Zth j-hs (K/W)			BT139
	with heatsink compound
	without heatsink compound
1			unidirectional		bidirectional
					bidirectional
0.1
				P	t p
				D
0.01
							t
0.001		0.1ms	1ms	10ms	0.1s	1s	10s
10us		0.1ms	1ms	10ms	0.1s	1s	10s
				tp / s

Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.

1000 dV/dt (V/us)

off-state dV/dt limit

BT139...H SERIES

100

dIcom/dt =
20 A/ms	16	12	9.3	7.2	5.6

1 0	50	100	150
		Tj / C

Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt.

February 1996

Rev 1.100

Philips Semiconductors Product specification

Triacs	BT139X series H
high noise immunity

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

	10.3
	max			4.6
				4.6
				max
	3.2			2.9 max
	3.0			2.9 max
Recesses (2x)		2.8
Recesses (2x)
2.5				6.4
0.8 max. depth
				seating	15.8
		15.8	19	seating	max
		max.	max.	plane
3 max.
not tinned
		3		2.5
				2.5
13.5
min.
1	2	3
0.4 M					1.0 (2x)
		2.54		0.6	0.9
				0.5	0.9
					0.7


	5.08			2.5	1.3

Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.

2.The improved isolation rating applies only to the SOT186 version A envelope.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Triacs	BT139X series H
high noise immunity

DEFINITIONS

Data sheet status

Objective specification	This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100

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