Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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GENERAL DESCRIPTION |
QUICK REFERENCE DATA |
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Glass passivated thyristors in a full |
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PARAMETER |
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MAX. |
MAX. |
MAX. |
UNIT |
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pack, plastic envelope, intended for |
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BT151X- |
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500 |
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650 |
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800 |
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use in applications requiring high |
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bidirectional |
blocking voltage |
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VDRM, |
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Repetitive peak off-state |
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500 |
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650 |
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800 |
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capability and high thermal cycling |
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VRRM |
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voltages |
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performance. |
Typical applications |
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IT(AV) |
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Average on-state current |
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5.7 |
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5.7 |
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5.7 |
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A |
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include motor control, industrial and |
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IT(RMS) |
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RMS on-state current |
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9 |
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9 |
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9 |
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A |
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domestic lighting, heating and static |
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ITSM |
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Non-repetitive peak on-state |
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100 |
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100 |
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100 |
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A |
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switching. |
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current |
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PINNING - SOT186A |
PIN CONFIGURATION |
SYMBOL |
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PIN DESCRIPTION
1cathode
2anode
3gate case isolated
case
a 
k
1 2 3 |
g |
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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UNIT |
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-500 |
-650 |
-800 |
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V |
, V |
RRM |
Repetitive peak off-state |
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5001 |
6501 |
800 |
V |
DRM |
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voltages |
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half sine wave; Ths ≤ 87 ˚C |
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IT(AV) |
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Average on-state current |
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5.7 |
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A |
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IT(RMS) |
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RMS on-state current |
all conduction angles |
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9 |
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A |
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ITSM |
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Non-repetitive peak |
half sine wave; Tj = 125 ˚C prior |
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on-state current |
to surge; with reapplied VDRM(max) |
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100 |
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A |
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t = 10 ms |
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t = 8.3 ms |
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110 |
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A |
I2t |
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I2t for fusing |
t = 10 ms |
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50 |
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A2s |
dIT/dt |
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Repetitive rate of rise of |
ITM = 20 A; IG = 50 mA; |
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50 |
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A/μs |
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on-state current after |
dIG/dt = 50 mA/μs |
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triggering |
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IGM |
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Peak gate current |
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2 |
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A |
VGM |
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Peak gate voltage |
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5 |
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V |
VRGM |
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Peak reverse gate voltage |
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5 |
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V |
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PGM |
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Peak gate power |
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5 |
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W |
PG(AV) |
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Average gate power |
over any 20 ms period |
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0.5 |
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W |
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Tstg |
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Storage temperature |
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-40 |
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150 |
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˚C |
Tj |
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Operating junction |
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125 |
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˚C |
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temperature |
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1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
February 1996 |
1 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Visol |
R.M.S. isolation voltage from all |
f = 50-60 Hz; sinusoidal |
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2500 |
V |
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three terminals to external |
waveform; |
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heatsink |
R.H. ≤ 65% ; clean and dustfree |
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Cisol |
Capacitance from T2 to external |
f = 1 MHz |
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10 |
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pF |
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heatsink |
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THERMAL RESISTANCES
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
Rth j-hs |
Thermal resistance |
with heatsink compound |
- |
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4.5 |
K/W |
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junction to heatsink |
without heatsink compound |
- |
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6.5 |
K/W |
Rth j-a |
Thermal resistance |
in free air |
- |
55 |
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K/W |
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junction to ambient |
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STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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IGT |
Gate trigger current |
VD = 12 |
V; IT = 0.1 A |
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2 |
15 |
mA |
IL |
Latching current |
VD = 12 |
V; IGT = 0.1 A |
- |
10 |
40 |
mA |
IH |
Holding current |
VD = 12 |
V; IGT = 0.1 A |
- |
7 |
20 |
mA |
VT |
On-state voltage |
IT = 23 A |
- |
1.4 |
1.75 |
V |
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VGT |
Gate trigger voltage |
VD = 12 |
V; IT = 0.1 A |
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0.6 |
1.5 |
V |
ID, IR |
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VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C |
0.25 |
0.4 |
- |
V |
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Off-state leakage current |
VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C |
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0.1 |
0.5 |
mA |
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DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL |
PARAMETER |
CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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dVD/dt |
Critical rate of rise of |
VDM = 67% VDRM(max); Tj = 125 ˚C; |
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off-state voltage |
exponential waveform |
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V/μs |
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Gate open circuit |
50 |
130 |
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tgt |
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RGK = 100 |
Ω |
200 |
1000 |
- |
V/μs |
Gate controlled turn-on |
ITM = 40 A; VD = VDRM(max); IG = 0.1 A; |
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2 |
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μs |
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time |
dIG/dt = 5 A/μs |
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μs |
tq |
Circuit commutated |
VD = 67% VDRM(max); Tj = 125 ˚C; |
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70 |
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turn-off time |
ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs; |
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dVD/dt = 50 V/μs; RGK = 100 Ω |
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February 1996 |
2 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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10 |
Ptot / W |
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BT151F |
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Ths(max) / C80 |
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conduction |
form |
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a = 1.57 |
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angle |
factor |
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degrees |
a |
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89 |
8 |
30 |
4 |
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1.9 |
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60 |
2.8 |
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90 |
2.2 |
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2.2 |
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120 |
1.9 |
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2.8 |
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6 |
180 |
1.57 |
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98 |
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4 |
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4 |
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107 |
2 |
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116 |
0 |
0 |
1 |
2 |
3 |
4 |
5 |
125 |
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6 |
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IF(AV) / A |
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Fig.1. Maximum on-state dissipation, Ptot, versus
average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV).
1000 |
ITSM / A |
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BT151 |
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dIT/dt limit |
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100 |
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IT |
ITSM |
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T |
time |
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Tj initial = 125 C max |
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10 |
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100us |
1ms |
10ms |
10us |
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T / s |
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Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A |
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BT151F |
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10 |
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87 C |
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8 |
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6 |
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4 |
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2 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Ths / C |
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Fig.3. Maximum permissible rms current IT(RMS) , versus heatsink temperature Ths.
120 |
ITSM / A |
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BT151 |
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100 |
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IT |
ITSM |
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T |
time |
80 |
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Tj initial = 125 C max |
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60 |
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40 |
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20 |
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1 |
10 |
100 |
1000 |
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Number of half cycles at 50Hz |
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Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
25 |
IT(RMS) / A |
BT151 |
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20 |
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15 |
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10 |
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5 |
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0 |
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0.1 |
1 |
10 |
0.01 |
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surge duration / s |
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Fig.5. Maximum permissible repetitive rms on-state
current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Ths ≤ 87˚C.
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VGT(Tj) |
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BT151 |
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1.6 |
VGT(25 C) |
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1.4 |
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1.2 |
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1 |
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0.8 |
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0.6 |
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0.4 |
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0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 1996 |
3 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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IGT(Tj) |
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BT151 |
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3 |
IGT(25 C) |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
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0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) |
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IL(25 C) |
BT145 |
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3 |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.8. |
Normalised latching current IL(Tj)/ IL(25˚C), |
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versus junction temperature Tj. |
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IH(Tj) |
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IH(25 C) |
BT151 |
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3 |
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2.5 |
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2 |
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1.5 |
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1 |
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0.5 |
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0 |
0 |
50 |
100 |
150 |
-50 |
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Tj / C |
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Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj.
30 |
IT / A |
BT151 |
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Tj = 125 C |
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25 |
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Tj = 25 C |
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Vo = 1.06 V |
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Rs = 0.0304 ohms |
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typ |
max |
20 |
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15 |
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10 |
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5 |
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0 |
0 |
0.5 |
1 |
1.5 |
2 |
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VT / V |
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Fig.10. Typical and maximum on-state characteristic.
10 |
Zth j-hs (K/W) |
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BT151 |
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without heatsink compound |
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1 |
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with heatsink compound |
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0.1 |
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P |
t p |
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D |
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0.01 |
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t |
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0.001 |
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0.1ms |
1ms |
10ms |
0.1s |
1s |
10s |
10us |
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tp / s |
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Fig.11. Transient thermal impedance Zth j-hs, versus pulse width tp.
10000 |
dVD/dt (V/us) |
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1000 |
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RGK = 100 Ohms |
100 |
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gate open circuit |
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10 |
0 |
50 |
100 |
150 |
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Tj / C |
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Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.
February 1996 |
4 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
|
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Thyristors |
BT151X series |
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MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
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10.3 |
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max |
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4.6 |
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max |
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3.2 |
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2.9 max |
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3.0 |
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Recesses (2x) |
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2.8 |
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2.5 |
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6.4 |
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0.8 max. depth |
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seating |
15.8 |
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15.8 |
19 |
max |
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max. |
max. |
plane |
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3 max. |
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not tinned |
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3 |
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2.5 |
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13.5 |
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min. |
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1 |
2 |
3 |
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0.4 M |
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1.0 (2x) |
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2.54 |
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0.6 |
0.9 |
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0.5 |
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0.7 |
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5.08 |
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2.5 |
1.3 |
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1.Accessories supplied on request: refer to mounting instructions for F-pack envelopes.
2.The improved isolation rating applies only to the SOT186 version A envelope.
February 1996 |
5 |
Rev 1.100 |
Philips Semiconductors |
Product specification |
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Thyristors |
BT151X series |
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DEFINITIONS
Data sheet status
Objective specification |
This data sheet contains target or goal specifications for product development. |
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Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification |
This data sheet contains final product specifications. |
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
February 1996 |
6 |
Rev 1.100 |