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Philips Semiconductors Product specification

Thyristor

BT169DW

logic level

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass

passivated, sensitive

gate

SYMBOL

PARAMETER

MAX.

UNIT

thyristor in a plastic envelope, suitable

for surface mounting, intended for use

VDRM,

Repetitive peak off-state voltages

400

in general purpose switching and

VRRM

phase

control applications.

This

IT(AV)

Average on-state current

0.6

device is intended to be interfaced

IT(RMS)

RMS on-state current

directly

to microcontrollers,

logic

ITSM

Non-repetitive peak on-state current

integrated circuits and other low

power gate trigger circuits.

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

tab

anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL			PARAMETER	CONDITIONS	MIN.	MAX.	UNIT

V	. V	RRM	Repetitive peak off-state		-	4001	V
DRM		RRM	voltages
			voltages	half sine wave; Tsp ≤ 112 ˚C
IT(AV)			Average on-state current	half sine wave; Tsp ≤ 112 ˚C	-	0.63	A
IT(RMS)			RMS on-state current	all conduction angles	-	1	A
ITSM			Non-repetitive peak	half sine wave; Tj = 125 ˚C prior to surge;
			on-state current	with reapplied VDRM(max)	-	8	A
				t = 10 ms	-	8	A
				t = 8.3 ms	-	9	A
I2t			I2t for fusing	t = 10 ms	-	0.32	A2s
dIT/dt			Repetitive rate of rise of	ITM = 2 A; IG = 10 mA; dIG/dt = 100 mA/μs	-	50	A/μs
			on-state current after
			triggering
IGM			Peak gate current		-	1	A
VGM			Peak gate voltage		-	5	V
VRGM			Peak reverse gate voltage		-	5	V
PGM			Peak gate power		-	2	W
PG(AV)			Average gate power	over any 20 ms period	-	0.1	W
Tstg			Storage temperature		-40	150	˚C
Tj			Operating junction		-	125	˚C
			temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs.

February 1996

Rev 1.100

Philips Semiconductors Product specification

Thyristor					BT169DW
logic level

THERMAL RESISTANCES

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

Rth j-sp	Thermal resistance		-	-	15	K/W
	junction to solder point
Rth j-a	Thermal resistance	pcb mounted, minimum footprint	-	156	-	K/W
	junction to ambient	pcb mounted; pad area as in fig:14	-	70	-	K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

IGT	Gate trigger current	VD = 12 V; IT = 10 mA; gate open circuit	-	50	200	μA
IL	Latching current	VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ	-	2	6	mA
IH	Holding current	VD = 12 V; IGT = 0.5 mA; RGK = 1 kΩ	-	2	5	mA
VT	On-state voltage	IT = 2 A	-	1.35	1.5	V
VGT	Gate trigger voltage	VD = 12 V; IT = 10 mA; gate open circuit	-	0.5	0.8	V
		VD = VDRM(max); IT = 10 mA; Tj = 125 ˚C;	0.2	0.3	-	V
		gate open circuit
ID, IR	Off-state leakage current	VD = VDRM(max); VR = VRRM(max); Tj = 125 ˚C;	-	0.05	0.1	mA
		RGK = 1 kΩ
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT

dVD/dt	Critical rate of rise of	VDM =67% VDRM(max); Tj = 125 ˚C;	-	25	-	V/μs
	off-state voltage	exponential waveform; RGK = 1k Ω				μs
tgt	Gate controlled turn-on	ITM = 2 A; VD = VDRM(max); IG = 10 mA;	-	2	-	μs
	time	dIG/dt = 0.1 A/μs				μs
tq	Circuit commutated	VD = 67% VDRM(max); Tj = 125 ˚C;	-	100	-	μs
	turn-off time	ITM = 1.6 A; VR = 35 V; dITM/dt = 30 A/μs;
		dVD/dt = 2 V/μs; RGK = 1 kΩ

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Thyristor													BT169DW
logic level
1 Ptot / W				BT169W			Tsp(max) / C110		10 ITSM / A			BT169
conduction		form					a = 1.57						ITSM
angle		factor					a = 1.57					IT	ITSM
degrees		a				1.9						IT
0.8	30	4				1.9		113	8			T	time
0.8	60	2.8				2.2		113	8
	60	2.8				2.2
	90	2.2			2.8							Tj initial = 125 C max
	120	1.9										Tj initial = 125 C max
	120	1.9
0.6	180	1.57		4				116	6
0.6								116	6

0.4								119	4
0.2								122	2
0								125	01
0	0.1		0.2	0.3	0.4	0.5	0.6	0.7	01		10	100	1000
				IF(AV) / A							Number of half cycles at 50Hz
Fig.1. Maximum on-state dissipation, Ptot, versus									Fig.4.	Maximum permissible non-repetitive peak
average on-state current, IT(AV), where a = form									on-state current ITSM, versus number of cycles, for
			factor = IT(RMS)/ IT(AV).							sinusoidal currents, f = 50 Hz.
1000 ITSM / A					BT169				2 IT(RMS) / A			BT134W
									1.5
100
									1
10	IT		ITSM
		T	time						0.5
		T	time
	Tj initial = 125 C max
1				100us		1ms		10ms	0
10us				100us		1ms		10ms	0		0.1	1	10
					T / s				0.01		0.1	1	10
					T / s							surge duration / s

Fig.2. Maximum permissible non-repetitive peak	Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for	current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 10ms.	currents, f = 50 Hz; Tsp ≤ 112˚C.

1.2	IT(RMS) / A		BT134W
1					112 C
1
0.8
0.6
0.4
0.2
0		0	50	100	150
-50		0	50	100	150
			Tsp / C

Fig.3. Maximum permissible rms current IT(RMS) , versus solder point temperature Tsp.

	VGT(Tj)		BT151
1.6	VGT(25 C)		BT151
1.4
1.2
1
0.8
0.6
0.4		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Thyristor	BT169DW
logic level

	IGT(Tj)		BT169
3	IGT(25 C)		BT169
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

	IL(Tj)
3	IL(25 C)		BT169
3
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C
Fig.8.		Normalised latching current IL(Tj)/ IL(25˚C),
	versus junction temperature Tj, RGK = 1 kΩ.
	IH(Tj)
3	IH(25 C)		BT169
2.5
2
1.5
1
0.5
0		0	50	100	150
-50		0	50	100	150
			Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj, RGK = 1 kΩ.

IT / A

BT169W

Tj = 125 C

Tj = 25 C

4Vo = 1.0 V

Rs = 0.27 Ohms

3
2		typ		max
2
1
0 0	0.5	1	1.5	2	2.5
		VT / V

Fig.10. Typical and maximum on-state characteristic.

100 Zth j-sp (K/W)			BT169W
10
1
			P	t p
			D
0.1
						t
0.01	0.1ms	1ms	10ms	0.1s	1s	10s
10us	0.1ms	1ms	10ms	0.1s	1s	10s
			tp / s

Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp.

1000	dVD/dt (V/us)
100			RGK = 1 kohms
			RGK = 1 kohms
10
1	0	50	100	150
			Tj / C

Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj.

February 1996

Rev 1.100

Philips Semiconductors Product specification

Thyristor	BT169DW
logic level

MOUNTING INSTRUCTIONS	PRINTED CIRCUIT BOARD

	Dimensions in mm.	Dimensions in mm.
3.8		36
3.8
min
1.5		18
min		18
min
	60
	4.6	4.5
	9
2.3	6.3
1.5
min	10
	10
(3x)
1.5
min
4.6		7
		15
	50

Fig.13. soldering pattern for surface mounting	Fig.14. PCB for thermal resistance and power rating
SOT223.	for SOT223.
	PCB: FR4 epoxy glass (1.6 mm thick), copper
	laminate (35 μm thick).

February 1996

Rev 1.100

Philips Semiconductors Product specification

Thyristor	BT169DW
logic level

MECHANICAL DATA

Dimensions in mm

Net Mass: 0.11 g

			6.7
			6.3	B
	0.32		3.1	B
	0.32		3.1			0.2	M	A
	0.24		2.9			0.2	M	A
	0.24		2.9
			4	A
	0.10
	0.02			3.7		7.3
				3.3		6.7
16	13
max
	10	1	2	3
	10
	max
1.8	1.05	2.3	0.80	0.1	M	B
max	0.85		0.60	0.1	M	B
max	0.85		0.60	(4x)
			4.6	(4x)
			4.6
	Fig.15. SOT223 surface mounting package.

Notes

1.For further information, refer to surface mounting instructions for SOT223 envelope.

2.Epoxy meets UL94 V0 at 1/8".

February 1996

Rev 1.100

Philips Semiconductors	Product specification

Thyristor	BT169DW
logic level

DEFINITIONS

Data sheet status

Objective specification	This data sheet contains target or goal specifications for product development.

Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

February 1996

Rev 1.100

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